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All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

Recent advances in superconducting-mixer simulations

Over the last few years, considerable progress have been made in the development of techniques for fabricating high-quality superconducting circuits, and this success, together with major advances in the theoretical understanding of quantum detection and mixing at millimeter and submillimeter wavelengths, has made the development of CAD techniques for superconducting nonlinear circuits an important new enterprise. For example, arrays of quasioptical mixers are now being manufactured, where the antennas, matching networks, filters and superconducting tunnel junctions are all fabricated by depositing niobium and a variety of oxides on a single quartz substrate. There are no adjustable tuning elements on these integrated circuits, and therefore, one must be able to predict their electrical behavior precisely. This requirement, together with a general interest in the generic behavior of devices such as direct detectors and harmonic mixers, has lead us to develop a range of CAD tools for simulating the large-signal, small-signal, and noise behavior of superconducting tunnel junction circuits.

Withington, S.↗
NASA NTRS1992

Noise in Josepson effect mixers and the RSJ model

Josephson effect mixers have previously been observed to display 'excess' noise both in experiments with point contacts and in numerical simulations using the resistively shunted junction (RSJ) model. This excess noise causes the mixer noise temperature to be a factor of typically 20-100 times the physical temperature of the device. Previously, this excess was ascribed to conversion from unwanted sidebands of the local oscillator and Josephson frequencies and their harmonics. Our numerical modeling of the RSJ equations has led to a new understanding of the excess noise, which is simply due to the intrinsic Josephson oscillations of the device. In addition, we have extended the modeling to include the previously ignored case of finite device capacitance (i.e. RSJ capacitance parameter beta(sub c) does not equal 0, which is more realistic for lithographically defined Josephson such as shunted tunnel junctions or SNS bridges. For some cases, this yields an improvement of a factor of two in noise temperature from the zero capacitance models. We will discuss the device parameters which optimize the mixer performance for frequencies approaching the characteristic frequency of the device, which is given by the Josephson frequency at the I(sub c)R(sub n) voltage (nu = 2eI(sub c)R(sub n)/h). These modeling results predict good conversion efficiency and a noise temperature within a factor of a few of the physical temperature. Experiments are in progress to determine the accuracy of this modeling using a waveguide mixer at 100 GHz with optimized, resistively shunted Nb tunnel junctions. If the modeling results are valid, they are particularly encouraging for mixers in the submillimeter regime, given the possibility of obtaining non-hysteretic Josephson devices with I(sub c)R(sub n) products in excess of a millivolt, using for instance, high-T(sub c) SNS bridges. We discuss the modifications to the classical RSJ model which are necessary in the quantum regime (h nu greater than kT), and conclude the Josephson mixers may attain noise temperatures less than ten times the quantum limit at high frequencies.

Schoelkopf, R.↗
NASA NTRS1988

Direct control and characterization of a Schottky barrier by scanning tunneling microscopy

Scanning tunneling microscopy (STM) methods are used to directly control the barrier height of a metal tunnel tip-semiconductor tunnel junction. Barrier behavior is measured by tunnel current-voltage spectroscopy and compared to theory. A unique surface preparation method is used to prepare a low surface state density Si surface. Control of band bending with this method enables STM investigation of semiconductor subsurface properties.

Bell, L. D.↗
NASA NTRS1983

Inelastic electron tunneling spectroscopy

Inelastic electron tunneling spectroscopy is a useful technique for the study of vibrational modes of molecules adsorbed on the surface of oxide layers in a metal-insulator-metal tunnel junction. The technique involves studying the effects of adsorbed molecules on the tunneling spectrum of such junctions. The data give useful information about the structure, bonding, and orientation of adsorbed molecules. One of the major advantages of inelastic electron tunneling spectroscopy is its sensitivity. It is capable of detecting on the order of 10 to the 10th molecules (a fraction of a monolayer) on a 1 sq mm junction. It has been successfully used in studies of catalysis, biology, trace impurity detection, and electronic excitations. Because of its high sensitivity, this technique shows great promise in the area of solid-state electronic chemical sensing.

Khanna, S. K.↗
NASA NTRS1993

A Submillimeter Wave SIS Receiver for 547 GHz

The most sensitive heterodyne receivers used for millimeter wave and submillimeter wave radioastronomy employ superconductor-insulator-superconductor tunnel junctions as the nonlinear mixing element.

heterodyne receivers submillimeter wave SIS tunnel↗
NASA NTRS1981

Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctions

A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.

Lai, S. K.↗
NASA NTRS1985

New quantum oscillations in current driven small junctions

The response of current-biased Josephson and normal tunnel junctions (JJs and NTJs) such as those fabricated by Voss and Webb (1981) is predicted from a quantum-mechanical description based on the observation that the response of a current-driven open system is equivalent to that of a closed system subject to an external time-dependent voltage bias. Phenomena expected include voltage oscillations with no dc voltage applied, inverse Shapiro steps of dc voltage in the presence of microwave radiation, voltage oscillation in a JJ and an NTJ coupled by a capacitance to a current-biased junction, JJ voltage oscillation frequency = I/e rather than I/2e, and different NTJ resistance than in the voltage-driven case. The effects require approximate experimental parameter values Ic = 15 nA, C = 1 fF, and T much less than 0.4 K for JJs and Ic = a few nA, C = 1 fF, and R = 3 kiloohms for 100-microV inverse Shapiro steps at 10 GHz in NTJs.

Ben-Jacob, E.↗
NASA NTRS1985

Observation of adsorbate-induced surface states by elastic electron tunneling spectroscopy

Electronic structure induced by adsorbates at the interface of Al/AlOx/Au tunnel junctions has been observed by elastic electron tunneling spectroscopy. Strong structures appearing in the tunneling spectra above approximately 1 eV after exposure to I, Hg, Bi, and organohalides, have been interpreted in terms of adsorbate-induced surface states. The spectroscopic capabilities of elastic electron tunneling spectroscopy may be useful in the area of chemical detection. In the broader sense, the observation of adsorbate-induced unoccupied electronic states below the vacuum energy, makes elastic electron tunneling spectroscopy a potentially useful technique for the study of surfaces.

Leduc, H. G.↗
NASA NTRS1995

Measurements of noise in Josephson-effect mixers

We present new heterodyne receiver results obtained at 100 GHz using resistively-shunted Nb and NbN tunnel junctions. In addition, we have carried out accurate measurements of the available noise power of these devices at the L-band (1.5 GHz) IF (infrasonic) frequency. Both the heterodyne and the output noise measurements show that the noise of these devices can be a factor of five or more higher than that predicted by the simple current-biased RSJ model. The noise approaches the appropriate thermal or thermal and shot noise limits for bias voltages where the nonlinearity is not strong (i.e., V greater than I(sub C)R(sub N)), but as expected from the RSJ model, can be significantly higher at the low voltages where the mixers are typically biased. The bias voltage dependence of the noise shows structure which is associated with resonances in the RF embedding circuit. Surprisingly, we find that changes in the high-frequency (100 GHz) impedance presented to the junction can dramatically affect the magnitude and voltage dependence of the low-frequency (1.5 GHz) noise. This emphasizes the necessity of very closely matching the junction to free space over a wide frequency range.

NOISE MEASUREMENT↗
NASA NTRS1995

Wideband fixed-tuned SIS receiver for 200-GHz operation

We report on the design and development of a heterodyne receiver, designed to cover the frequency range 176-256 GHz. This receiver incorporates a niobium superconductor-insulator-superconductor (SIS) tunnel junction mixer, which, chiefly for reasons of reliability and ease of operation, is a fixed-tuned waveguide design. On-chip tuning is provided to resonate out the junction's geometric capacitance and produce a good match to the waveguide circuit. Laboratory measurements on the first test receiver indicate that the required input bandwidth (about 40%) is achieved with an average receiver noise temperature of below 50 K. Mixer conversion gain is observed at some frequencies, and the lowest measured receiver noise is less than 30 K. Furthermore, the SIS mixer used in this receiver is of simple construction, is easy to assemble and is therefore a good candidate for duplication.

RECEIVER NOISE TEMPERATURE↗
NASA NTRS1995

Microrefrigeration by a pair of normal metal/insulator/superconductor junctions

We suggest and demonstrate experimentally that two normal metal/insulator/superconductor (NIS) tunnel junctions combined in series to form a symmetric SINIS structure can operate as an efficient Peltier refrigerator. Specifically, it is shown that the SINIS structure with normal-state junction resistences of 1.0 and 1.1 kOmega is capable of reaching a temperature of about 100 mK starting from 300 mK. We estimate the corresponding cooling power to be 1.5 pW per total junction area of 0.8 micrometers(exp 2) at T = 300 mK. This cooling power density implies that scaling of junction area up to about 1 mm(exp 2) should bring the cooling power into the microW range.

Leivo, M. M.↗
NASA NTRS1985

Thin-film chemical sensors based on electron tunneling

The physical mechanisms underlying a novel chemical sensor based on electron tunneling in metal-insulator-metal (MIM) tunnel junctions were studied. Chemical sensors based on electron tunneling were shown to be sensitive to a variety of substances that include iodine, mercury, bismuth, ethylenedibromide, and ethylenedichloride. A sensitivity of 13 parts per billion of iodine dissolved in hexane was demonstrated. The physical mechanisms involved in the chemical sensitivity of these devices were determined to be the chemical alteration of the surface electronic structure of the top metal electrode in the MIM structure. In addition, electroreflectance spectroscopy (ERS) was studied as a complementary surface-sensitive technique. ERS was shown to be sensitive to both iodine and mercury. Electrolyte electroreflectance and solid-state MIM electroreflectance revealed qualitatively the same chemical response. A modified thin-film structure was also studied in which a chemically active layer was introduced at the top Metal-Insulator interface of the MIM devices. Cobalt phthalocyanine was used for the chemically active layer in this study. Devices modified in this way were shown to be sensitive to iodine and nitrogen dioxide. The chemical sensitivity of the modified structure was due to conductance changes in the active layer.

Khanna, S. K.↗
NASA NTRS1991

Superconductivity applications for infrared and microwave devices II; Proceedings of the Meeting, Orlando, FL, Apr. 4, 5, 1991

Topics discussed include thin-film technology, microwave transmission lines and resonators, microwave devices and circuits, infrared detectors and bolometers, and superconducting junctions. Papers are presented on possible enhancement in bolometric response using free-standing film of YBa2Cu3O(x), aging and surface instability in high-Tc superconductors, epitaxial Tl2Ba2CaCu2O8 thin films on LaAlO3 and their microwave device properties, the performance of stripline resonators using sputtered YBCO films, and a coplanar waveguide microwave filter of YBa2Cu3O7. Attention is also given to the performance characteristics of Y-Ba-Cu-O microwave superconducting detectors, high-Tc bolometer developments for planetary missions, infrared detectors from YBaCuO thin films, high-temperature superconductor junction technology, and submillimeter receiver components using superconducting tunnel junctions.

Heinen, Vernon O.↗
NASA NTRS1991

Radiation hardness of Ga0.5In0.5 P/GaAs tandem solar cells

The radiation hardness of a two-junction monolithic Ga sub 0.5 In sub 0.5 P/GaAs cell with tunnel junction interconnect was investigated. Related single junction cells were also studied to identify the origins of the radiation losses. The optimal design of the cell is discussed. The air mass efficiency of an optimized tandem cell after irradiation with 10(exp 15) cm (-2) 1 MeV electrons is estimated to be 20 percent using currently available technology.

Kurtz, Sarah R.↗
NASA NTRS1983

Long-range surface plasmons in electrode structures

Surface polaritons guided by symmetric double metal film structures are analyzed, with particular attention given to the attenuation of the two long-range modes that occur. It is found that long-range surface plasmon polariton modes do exist for double electrode structures over a limited range of material parameters. Guided by thin metal electrodes, surface plasmon polaritons can achieve millimeter plus propagation distances in the near infrared. It is pointed out that if the slab is electrooptic, then very low voltages will be needed to manipulate the waves. The fact that long-range modes exist simultaneously with junction tunnel plasmons may be of use in providing directional radiation from light-emitting junctions or the inverse process of light to electrical energy conversion.

Stegeman, G. I.↗
NASA NTRS2007

GaAs Photovoltaics on Polycrystalline Ge Substrates

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Wilt, David M.↗
NASA NTRS1989

Electron tunnel sensor technology

The recent development of Scanning Tunneling Microscopy technology allows the application of electron tunneling to position detectors for the first time. The vacuum tunnel junction is one of the most sensitive position detection mechanisms available. It is also compact, simple, and requires little power. A prototype accelerometer based on electron tunneling, and other sensor applications of this promising new technology are described.

Waltman, S. B.↗