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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Atomic-scale polarization switching in wurtzite ferroelectrics

Ferroelectric wurtzites have the potential to revolutionize modern microelectronics because they are easily integrated with multiple mainstream semiconductor platforms. However, the electric fields required to reverse their polarization direction and unlock electronic and optical functions need substantial reduction for operational compatibility with complementary metal-oxide semiconductor (CMOS) electronics. To understand this process, we observed and quantified real-time polarization switching of a representative ferroelectric wurtzite (Al 0.94 B 0.06 N) at the atomic scale with scanning transmission electron microscopy. The analysis revealed a polarization reversal model in which puckered aluminum/boron nitride rings in the wurtzite basal planes gradually flatten and adopt a transient nonpolar geometry. Independent first-principles simulations reveal the details and energetics of the reversal process through an antipolar phase. Furthermore, this model and local mechanistic understanding are a critical initial step for property engineering efforts in this emerging material class.

36 MATERIALS SCIENCE↗
DOE OSTI2023

PV Inverter Systems Enabled by Monolithically Integrated SiC based Four Quadrant Power Switch (4-QPS) [BiDFET]

The purpose of this project was to develop a new breed of Power Conversion Systems (PCS) for PV integration that is enabled by the newly developed 4-Quadrant Single Die SiC Power Semiconductor Switches (4-QPS) or also referred to as “Bidirectional FET (BIDFET)”. This work includes semiconductor die development, advanced packaging, converter design, development, and testing of 4-QPS enabled hardware prototypes at 1 kW (for single phase residential application) and 10 kW (for three phase commercial application). The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. The matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac–ac and ac–dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

Monolithic optoelectronic circuit design for on-chip terahertz applications

We demonstrate a monolithic coplanar stripline platform for on-chip terahertz (THz) generation, transmission, and detection, addressing key challenges of mode purity, bandwidth, and referencing. Capacitive coupling of the photoconductive generator switch enforces pure odd-mode propagation, increases THz field strength, and extends the operational frequency range, achieving 0.05–1.4 THz. Our architecture enables fully monolithic fabrication with amorphous silicon switches, in situ field referencing, and galvanic isolation between generation and detection. Finite-element simulations and experiments confirm that suppressing parasitic modes improves signal integrity, providing a robust platform for high-fidelity THz spectroscopy, ultrafast electronics, and nanoscale quantum materials research.

Capacitive coupling↗
DOE OSTI2025

Evaluating switch lifetime in soft-switched single-stage differential-mode SST

The reliability of semiconductor switches in single-stage differential-mode solid-state transformers (DM-SSTs) has not been systematically evaluated under soft-switching operation and realistic grid conditions. This paper presents a switch-level reliability analysis for soft-switched and hard-switched DM-SST configurations by integrating converter-specific power loss modeling with empirical lifetime prediction. Analytical derivation of device current profiles specific to the DM-SST is used to characterize electrothermal stress, which is then mapped to lifetime using degradation models obtained from power cycling tests (PCTs). Applied to realistic SST load profiles and grid voltage variations, this approach provides a probabilistic prediction of switch lifetime for the DM-SST. Lifetime estimates for both SiC MOSFETs and Si IGBTs are presented, offering insight into device degradation under converter operating conditions. The results quantify the reliability benefits of soft switching in single-stage SSTs, highlighting how switching dynamics influence long-term switch degradation.

14 SOLAR ENERGY↗
DOE OSTI2020

Motion Control of Hydraulic Actuators In the Presence of Discrete Pressure Rail Switching

Conventional off-highway mobile machines are hydraulically actuated and have poor energy efficiencies. The goal to increase system efficiency and to reap the benefits of electrification have led to the creation of a novel Hybrid Hydraulic-Electric Architecture (HHEA) which could significantly increase efficiency, decrease the sizes and cost of electrical components, and maintain control performance. The key concept is to utilize a set of common pressure rails to provide the majority of power via the power dense hydraulics and to modulate that power by small electric components, which are less power dense, for precise control. The paper presents the motion control strategy for this architecture. The architecture presents a distinct challenge in that as the energy minimization algorithm selects different pressure rails, the system could experience large discrete jumps in pressures that impact control performance, especially when the electric components are torque limited. To meet this challenge, a passivity based back-stepping controller is used as the nominal controller between pressure rail switching events and a separate transition controller is used to deal with the pressure rail switching events. Two transition controllers are proposed, one uses the electric motor torque as the input, and the other also uses valve timing as a second input. For both transition controllers, a least norm control approach is used to steer the system states to the exact desired states at the end of the short transition period (~ 40 ms). The transition controllers are able to reduce the tracking error and the required electric motor torque, and hence achieve better control performance even with smaller electric components.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Enhanced Switching Reliability of Hf 0.5 Zr 0.5 O 2 Ferroelectric Films Induced by Interface Engineering

Ferroelectric materials have been widely researched for applications in memory and energy storage. Among these materials and benefiting from their excellent chemical compatibility with complementary metal–oxide–semiconductor (CMOS) devices, hafnia-based ferroelectric thin films hold great promise for highly scaled semiconductor memories, including nonvolatile ferroelectric capacitors and transistors. However, variation in the switched polarization of this material during field cycling and a limited understanding of the responsible mechanisms have impeded their implementation in technology. Here, we show that ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) capacitors that are nearly free of polarization “wake-up”─a gradual increase in switched polarization as a function of the number of switching cycles─can be achieved by introducing ultrathin HfO 2 buffer layers at the HZO/electrodes interface. High-resolution transmission electron microscopy (HRTEM) reveals crystallite sizes substantially greater than the film thickness for the buffer layer capacitors, indicating that the presence of the buffer layers influences the crystallization of the film (e.g., a lower ratio of nucleation rate to growth rate) during postdeposition annealing. This evidently promotes the formation of a polar orthorhombic (O) phase in the as-fabricated buffer layer samples. Synchrotron X-ray diffraction (XRD) reveals the conversion of the nonpolar tetragonal (T) phase to the polar orthorhombic (O) phase during electric field cycling in the control (no buffer) devices, consistent with the polarization wake-up observed for these capacitors. The extent of T–O transformation in the nonbuffer samples is directly dependent on the duration over which the field is applied. Here these results provide insight into the role of the HZO/electrodes interface in the performance of hafnia-based ferroelectrics and the mechanisms driving the polarization wake-up effect.

36 MATERIALS SCIENCE↗
DOE OSTI2024

A data-driven sensor placement approach for detecting voltage violations in distribution systems

Stochastic fluctuations in power injections from distributed energy resources (DERs) combined with load variability can cause constraint violations (e.g., exceeded voltage limits) in electric distribution systems. To monitor grid operations, sensors are placed to measure important quantities such as the voltage magnitudes. Here, in this paper, we consider a sensor placement problem which seeks to identify locations for installing sensors that can capture all possible violations of voltage magnitude limits. We formulate a bilevel optimization problem that minimizes the number of sensors and avoids false sensor alarms in the upper level while ensuring detection of any voltage violations in the lower level. This problem is challenging due to the nonlinearity of the power flow equations and the presence of binary variables. Accordingly, we employ recently developed conservative linear approximations of the power flow equations that overestimate or underestimate the voltage magnitudes. By replacing the nonlinear power flow equations with conservative linear approximations, we can ensure that the resulting sensor locations and thresholds are sufficient to identify any constraint violations. Additionally, we apply various problem reformulations to significantly improve computational tractability while simultaneously ensuring an appropriate placement of sensors. Lastly, we improve the quality of the results via an approximate gradient descent method that adjusts the sensor thresholds. We demonstrate the effectiveness of our proposed method for several test cases, including a system with multiple switching configurations.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

DC-AC Tool: Fully Automating the Acquisition of AC Power Flow Solution

DC2AC is an automated tool for achieving a converged AC power flow solution from any dispatch, e.g., determined using DC power flow model based optimal power flow. The entire process is free of human interference. It is usually encountered in practice that, even with a DC power flow solution, acquiring the solved AC power flow solution, if exists, sometimes could be a challenging task, especially during the planning stage. It is also difficult to distinguish the unsolvable cases from diverging iterations. Manual adjustments to approach the desired power flow condition has been largely relied on in the past using lots of engineering heuristics. This tool provides a systematic way to first achieve a solvable AC power flow case by modifying the power flow condition, and then try to track the AC power flow solution while gradually removing the adopted changes. If all adopted changes can be completely removed, then the original AC power flow solution is obtained. Otherwise, insights for actionable controls are derived to help operation and planning. Currently, this tool has been implemented in Python using SIEMENS PTI PSS/E as power flow solver, where only adjusting generator terminal voltage set point is considered as an available means to try to turn an unsolved power flow to a solved one. In future, more means should be considered, including the operation of tap-changing transformers, switched shunts and redispatch of active power.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

In operando cryo-STEM of pulse-induced charge density wave switching in TaS 2

The charge density wave material 1T-TaS 2 exhibits a pulse-induced insulator-to-metal transition, which shows promise for next-generation electronics such as memristive memory and neuromorphic hardware. However, the rational design of TaS 2 devices is hindered by a poor understanding of the switching mechanism, the pulse-induced phase, and the influence of material defects. Here, we operate a 2-terminal TaS 2 device within a scanning transmission electron microscope at cryogenic temperature, and directly visualize the changing charge density wave structure with nanoscale spatial resolution and down to 300 μs temporal resolution. We show that the pulse-induced transition is driven by Joule heating, and that the pulse-induced state corresponds to the nearly commensurate and incommensurate charge density wave phases, depending on the applied voltage amplitude. With our in operando cryogenic electron microscopy experiments, we directly correlate the charge density wave structure with the device resistance, and show that dislocations significantly impact device performance. This work resolves fundamental questions of resistive switching in TaS 2 devices, critical for engineering reliable and scalable TaS 2 electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Network traffic control for multi-homed end-hosts via SDN

Software-defined networking (SDN) is an emerging technology of efficiently controlling and managing computer networks, such as in data centres, wide-area networks, as well as in ubiquitous communication. In this study, the authors explore the idea of embedding the SDN components, represented by SDN controller and virtual switch, in end-hosts to improve network performance. In particular, the authors consider load balancing across multiple network interfaces on end-hosts with different link capacity scenarios. The authors have explored and implemented different SDN-based load-balancing approaches based on OpenFlow software switches, and have demonstrated the feasibility and the potential of this approach. The proposed system has been evaluated with MultiPath transmission control protocol (MPTCP). Furthermore, the proposed results demonstrated the potential of applying the SDN concepts on multi-homed devices resulting in an increase in achieved throughput of 55% compared to the legacy single network approach and 10% compared to the MPTCP.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Enhancing the dark-state bistability and thermal stability of zinc dynamic windows with nitrile electrolytes

Reversible metal electrodeposition (RME) for dynamic windows is a promising alternative to traditional electrochromics. We explore the reasons behind the bistability of practical RME dynamic windows under a wide temperature range, i.e., how well they maintain their dark state without external power. While Zn dynamic windows with dimethyl sulfoxide electrolytes exhibit adequate bistability at room temperature, their performance degrades at elevated temperatures due to the presence of small amounts of water. Here, to overcome this problem, we developed a set of Zn nitrile electrolytes. The integrated devices can maintain dark-state bistability over at least 1 month at 85°C with 0.1% transmission using a propionitrile (PrCN) electrolyte. Additionally, the PrCN-based Zn dynamic windows possess high optical contrast, color-neutral switching, and promising cyclability, making Zn RME in nitrile electrolytes a promising solution for achieving robust dynamic windows.

RME↗
DOE OSTI2023

Large Spin-Orbit-Torque Efficiency and Room-Temperature Magnetization Switching in Sr Ir O 3 / Co-Fe-B Heterostructures

Spin-orbit-torque (SOT) switching is a potentially energy-efficient mechanism by which electrical current can control magnetization. We demonstrate room-temperature SOT switching in nanometer-thick Co⁢Fe⁢B/Sr⁢Ir⁢O 3 bilayers despite the amorphous nature of CoFeB and the interface. This behavior is attributed to the large spin Hall angle in Sr⁢Ir⁢O 3 as well as high spin transmission at the interface that contribute to the SOT efficiency ξ SOT . Our bilayers exhibit large ξ SOT of up to 1.4 and effective spin Hall conductivity of 0.9 ×10 5 (ℏ/2e)Ω –1 ⁢m –1 . In our bilayers, we observe unidirectional magnetoresistance and current-induced magnetization switching with a low critical current density of 1.38 ×10 10 A/m 2 at room temperature. Finally, our results are promising for heterostructures combining technologically relevant CoFeB with high spin-orbit-coupling oxides.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Determining the Minimum Phase‐to‐Phase Gap Distance for Unconventional Transmission Lines Using Numerical Method

With the increasing demand for power transmission, compact, high surge impedance loading (HSIL) high-voltage transmission lines have emerged as a viable solution due to their reduced land acquisition costs and higher power delivery capability. The compactness of a transmission line depends on effective insulation coordination, particularly in determining the phase-to-phase clearance, which is governed by the critical flashover voltage under switching and lightning overvoltage conditions. Traditional methods for phase-to-phase clearance rely on empirical formulas derived from experimental data, which are convenient for conventional high-voltage lines. However, unconventional HSIL lines require a faster and more adaptable evaluation method, as they involve optimized conductor positioning to reduce right-of-way requirements while enhancing natural power loadability. This study presents a simplified numerical approach to determine the minimum phase-to-phase gap, utilizing arc propagation viability curves, and offers an efficient alternative to conventional empirical methods. The proposed method was successfully applied to a 500 kV conventional line as well as 500 and 735 kV unconventional line designs, demonstrating its capability in accurately assessing insulation requirements. Results reveal that the method can support reduced gap clearances while still maintaining reliability, thereby validating its usefulness in optimizing compact transmission line configurations.

Arafat, Easir [The University of Texas at Dallas, ↗
DOE OSTI2025

Purely electronic insulator-metal transition in rutile VO 2

Volatile resistive switching in neuromorphic computing can be tuned by external stimuli such as temperature or electric-field. However, this type of switching is generally coupled to structural changes, resulting in slower reaction speed and higher energy consumption when incorporated into an electronic device. The vanadium dioxide (VO 2 ), which has near room temperature metal-insulator transition (MIT), is an archetypical volatile resistive switching system. Here, we demonstrate an isostructural MIT in an ultrathin VO 2 film capped with a photoconductive cadmium sulfide (CdS) layer. Transmission electron microscopy, resistivity experiments, and first-principles calculations show that the hole carriers induced by CdS photovoltaic effect are driving the MIT in rutile VO 2 . The insulating-rutile VO 2 phase has been proved and can remain stable for hours. Our finding provides a new approach to produce purely electronically driven MIT in VO 2 , and widens its applications in fast-response, low-energy neuromorphic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Heat generation due to the Anderson catastrophe in mesoscopic devices

Anderson's orthogonality catastrophe (AOC) theorem establishes that the ground state of the many-body fermion system is asymptotically orthogonal to the ground state of the same system perturbed by a scattering potential so that the overlap between the original and new ground states decays to zero with the system size. We adopt the AOC for a description of heat production in a complementary metal-oxide-semiconductor transistor. We find that the heat released in the transistor comprises two distinct components, contribution from the dissipation accompanying electron transmission under the applied voltage and purely quantum-mechanical AOC part due to the change in scattering matrix for electrons upon switching between high and low conductance regimes. We calculate the AOC-induced heat production, which we call switching heat.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Flexible AI Models for Grid Resilience

The rapid growth in size and complexity of artificial intelligence (AI) and machine learning (ML) models has led to increased energy demands, posing a threat to the reliability of the existing power grid. This project addresses the challenge of highly intermittent and energy-intensive inference workloads by (1) developing fidelity-adaptive neural networks capable of dynamic response to grid conditions and (2) integrating these networks with power flow simulations to assess their impact on power grid reliability. We will explore both top-down and bottom-up approaches to create hierarchies of submodels that provide a controlled trade-off between power draw and prediction accuracy. The top-down method utilizes NN pruning to reduce a flagship model into progressively smaller, energy-efficient variants. The bottom-up approach employs geometrically principled weight setting strategies to construct depth-efficient models from the ground up. A real-time hardware-in-the-loop (HIL) platform will be developed to simulate a scaled AC power grid, integrating live AI workload power draw and enabling dynamic model switching in response to grid feedback. This work will provide a novel framework for evaluating the impact of flexible AI/ML workloads on grid performance and establish new methodologies for energy-aware computing in data centers. The outcomes will demonstrate that adaptive AI/ML can play a critical role in improving grid stability while advancing NREL's leadership in energy-efficient computing research.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Modular, Multifunction, Multiport and Medium Voltage Utility Scale SiC PV Inverter (Final Report)

This project is to develop and demonstrate a Modular, Multi-function, Multiport and Medium Voltage utility scale SiC solar inverter (M4 Inverter). The M4 Inverter is a next generation utility scale PV + storage inverter that can substantially reduce the levelized cost of energy (LCOE) while providing grid friendly ancillary services. Conventional utility scale solar inverters includes three parts, a megawatt rated solar inverter, a low frequency transformer (LFT) and a medium voltage switch gear. The proposed M4 Inverter directly converts the DC output of solar panels to medium voltage AC, eliminating the bulky and costly LFT. The M4 Inverter also has a DC port to interface with an additional energy storage device. This plus its bidirectional power flow capability, allows multiple functions in addition to PV maximum power tracking be achieved. These additional functionalities include but not limited to reactive power support, peak shaving, fast frequency regulation and synthetic inertia. Predicted LCOE reductions with these added functionalities, improved efficiency and longer lifetime time are more than 30% compared with the 2017 utility scale solar LCOE. A 1MVA SiC M4 Inverter was developed and tested at high power level. The project has also advanced the state of the art in controller hardware in the loop simulation capability. Power electronic innovations introduced in the M4 Inverter includes 1700V SiC MOSFET application in 1500V PV system, soft switching three-port power converters and modular converter architecture.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

Resistive Switching in SrFeO2.5/Nb:SrTiO3 Heterostructures with Growth-Controlled Film Orientation

Resistive switching, a behavior found in many oxide materials, has the potential to enable emerging computer hardware technologies and architectures. We present resistive switching devices fabricated from epitaxial brownmillerite SrFeO2.5 films with two distinct film orientations, wherein facile oxygen ion diffusion planes are aligned parallel (in-plane) and perpendicular (out-of-plane) with the electrodes. SrFeO2.5 films were grown on (001) oriented Nb:SrTiO3 to enable high-quality interfaces and future integration with Si CMOS technologies. Post-growth vacuum annealing and growth pressure were used to control film orientations, as confirmed by transmission electron microscopy and x-ray diffraction measurements. Films grown with diffusion planes oriented in-plane had oxygen-rich, perovskite-like nanodomains spread throughout the film, and fabricated devices exhibited worse switching consistency and more stochasticity. In contrast, films grown with diffusion planes oriented out-of-plane had a more uniform oxygen-rich perovskite interfacial layer above the bottom electrode, and devices built from this film orientation showed significant statistical improvements in switching voltages and cycling consistency.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗