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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Gate-Tunable Transport in Quasi-One-Dimensional α-Bi 4 I 4 Field Effect Transistors

Bi 4 I 4 belongs to a novel family of quasi-one-dimensional (1D) topological insulators (TIs). While its β phase was demonstrated to be a prototypical weak TI, the α phase, long thought to be a trivial insulator, was recently predicted to be a rare higher order TI. Here, we report the first gate tunable transport together with evidence for unconventional band topology in exfoliated α-Bi 4 I 4 field effect transistors. We observe a Dirac-like longitudinal resistance peak and a sign change in the Hall resistance; their temperature dependences suggest competing transport mechanisms: a hole-doped insulating bulk and one or more gate-tunable ambipolar boundary channels. Our combined transport, photoemission, and theoretical results indicate that the gate-tunable channels likely arise from novel gapped side surface states, two-dimensional (2D) TI in the bottommost layer, and/or helical hinge states of the upper layers. Markedly, a gate-tunable supercurrent is observed in an α-Bi 4 I 4 Josephson junction, underscoring the potential of these boundary channels to mediate topological superconductivity.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Terahertz Nano-Imaging of Electronic Strip Heterogeneity in a Dirac Semimetal

Emerging topological semimetals offer promise of realizing topological electronics enabled by terahertz (THz) current persistent against impurity scattering. Yet most fundamental issues remain on how to image nanoscale conductivity inhomogeneity. Here in this paper we show noninvasive and contactless conductivity mapping at THz-nm limit of electronic heterogeneity and nanostrip junctions in a Dirac material ZrTe 5 . A clear Dirac Fermion density transition, manifested as the exclusive THz conductivity contrast, is quantitatively analyzed and profiled on both sides of the junction. This also allows the determination of variable junction width of ~25–220 nm, depending on the THz conductivity contrast of adjacent strips. The unique THz-nm contrast is absent in mid-infrared nano-imaging measurements since topological semimetals with small Fermi pockets exhibit a better matching of their plasma frequency and scattering rate to the THz spectral region. The first-principles calculations provide two compelling implications: the conductivity nanocontrast can be induced by a small anisotropic strain, even less than 0.5%, due to an extreme strain sensitivity in ZrTe 5 ; A nanoscale topological phase transition is realized across some junctions induced by the strain, between strong topological insulators (TIs) and weak TIs/Dirac semimetals (DSMs).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Cation Vacancies Enable Anion Redox in Li Cathodes

Conventional Li-ion battery intercalation cathodes leverage charge compensation that is formally associated with redox on the transition metal. Employing the anions in the charge compensation mechanism, so-called anion redox, can yield higher capacities beyond the traditional limitations of intercalation chemistry. Here, we aim to understand the structural considerations that enable anion oxidation and focus on processes that result in structural changes, such as the formation of persulfide bonds. Using a Li-rich metal sulfide as a model system, we present both first-principles simulations and experimental data that show that cation vacancies are required for anion oxidation. First-principles simulations show that the oxidation of sulfide to persulfide only occurs when a neighboring vacancy is present. To experimentally probe the role of vacancies in anion redox processes, we introduce vacancies into the Li 2 TiS 3 phase while maintaining a high valency of Ti. When the cation sublattice is fully occupied and no vacancies can be formed through transition metal oxidation, the material is electrochemically inert. Upon introduction of vacancies, the material can support high degrees of anion redox, even in the absence of transition metal oxidation. The model system offers fundamental insights to deepen our understanding of structure–property relationships that govern reversible anion redox in sulfides and demonstrates that cation vacancies are required for anion oxidation, in which persulfides are formed.

25 ENERGY STORAGE↗
DOE OSTI2021

Activation of anionic redox in d 0 transition metal chalcogenides by anion doping

Expanding the chemical space for designing novel anionic redox materials from oxides to sulfides has enabled to better apprehend fundamental aspects dealing with cationic-anionic relative band positioning. Pursuing with chalcogenides, but deviating from cationic substitution, we here present another twist to our band positioning strategy that relies on mixed ligands with the synthesis of the Li 2 TiS 3-x Se x solid solution series. Through the series the electrochemical activity displays a bell shape variation that peaks at 260 mAh/g for the composition x = 0.6 with barely no capacity for the x = 0 and x = 3 end members. We show that this capacity results from cumulated anionic (Se 2– /Se n– ) and (S 2– /S n– ) and cationic Ti 3+ /Ti 4+ redox processes and provide evidence for a metal-ligand charge transfer by temperature-driven electron localization. Moreover, DFT calculations reveal that an anionic redox process cannot take place without the dynamic involvement of the transition metal electronic states. These insights can guide the rational synthesis of other Li-rich chalcogenides that are of interest for the development of solid-state batteries.

25 ENERGY STORAGE↗
DOE OSTI2020

Highly skewed current–phase relation in superconductor–topological insulator–superconductor Josephson junctions

Three-dimensional topological insulators (TIs) in proximity with superconductors are expected to exhibit exotic phenomena, such as topological superconductivity (TSC) and Majorana-bound states (MBS), which may have applications in topological quantum computation. In superconductor–TI–superconductor Josephson junctions, the supercurrent versus the phase difference between the superconductors, referred to as the current–phase relation (CPR), reveals important information including the nature of the superconducting transport. Here, we study the induced superconductivity in gate-tunable Josephson junctions (JJs) made from topological insulator BiSbTeSe 2 with superconducting Nb electrodes. We observe highly skewed (non-sinusoidal) CPR in these junctions. The critical current, or the magnitude of the CPR, increases with decreasing temperature down to the lowest accessible temperature ( T ~ 20 mK), revealing the existence of low-energy modes in our junctions. The gate dependence shows that close to the Dirac point the CPR becomes less skewed, indicating the transport is more diffusive, most likely due to the presence of electron/hole puddles and charge inhomogeneity. Our experiments provide strong evidence that superconductivity is induced in the highly ballistic topological surface states (TSS) in our gate-tunable TI-based JJs. Furthermore, the measured CPR is in good agreement with the prediction of a model which calculates the phase-dependent eigenstate energies in our system, considering the finite width of the electrodes, as well as the TSS wave functions extending over the entire circumference of the TI.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Functional composites by programming entropy-driven nanosheet growth

Here, nanomaterials must be systematically designed to be technologically viable. Driven by optimizing intermolecular interactions, current designs are too rigid to plug in new chemical functionalities and cannot mitigate condition differences during integration. Despite extensive optimization of building blocks and treatments, accessing nanostructures with the required feature sizes and chemistries is difficult. Programming their growth across the nano-to-macro hierarchy also remains challenging, if not impossible. To address these limitations, we should shift to entropy-driven assemblies to gain design flexibility, as seen in high-entropy alloys, and program nanomaterial growth to kinetically match target feature sizes to the mobility of the system during processing. In tis report, following a micro-then-nano growth sequence in ternary composite blends composed of block-copolymer-based supramolecules, small molecules and nanoparticles, we successfully fabricate high-performance barrier materials composed of more than 200 stacked nanosheets (125 nm sheet thickness) with a defect density less than 0.056 µm -2 and about 98% efficiency in controlling the defect type. Contrary to common perception, polymer-chain entanglements are advantageous to realize long-range order, accelerate the fabrication process (<30 min) and satisfy specific requirements to advance multilayered film technology. This study showcases the feasibility, necessity and unlimited opportunities to transform laboratory nanoscience into nanotechnology through systems engineering of self-assembly.

42 ENGINEERING↗
DOE OSTI2022

Neptunium transition probabilities estimated through laser induced breakdown spectroscopy (LIBS) measurements

in tis report calibration free–laser induced breakdown spectroscopy (CF-LIBS) approaches are promising for the analysis of radioactive materials; however, a lack of reported fundamental properties for these materials is an obstacle to implementation. Spectra of laser induced plasmas containing Np and Sr, along with Saha–Boltzmann methods, were used to estimate the first reported transition probabilities (TPs) of Np. These TPs enabled the first attempt at CF-LIBS analysis of radioactive samples to predict Np/Sr ratios with a mean error of 3.86%. The presented methodology of TP estimation will be applied to the study of other actinides and allow broader applications of CF-15 LIBS in the nuclear field.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2023

Near-field spectroscopy of Dirac plasmons in Bi 2 Se 3 ribbon arrays

Plasmons supported in the massless electron surface states of topological insulators (TIs), known as Dirac plasmons, have great potential in next generation optoelectronics. However, their inherent confinement to the surface makes the investigation of Dirac plasmons challenging. Near-field techniques provide the ideal platform to directly probe Dirac plasmons due to the sensitivity to evanescent fields at the surface. Here, we demonstrate the use of aperture near-field spectroscopy for the investigation of localized terahertz (THz) Dirac plasmon resonances in Bi 2 Se 3 ribbon arrays with widths ranging from 10 to 40 µm. Unlike scattering THz near-field techniques, the aperture method is most sensitive to plasmons with the relevant lower-momenta corresponding to plasmon wavelengths on the scale of ~20 µm. The combination of THz time-domain spectroscopy and aperture near-field microscopy enables sampling of localized Dirac plasmons in the near-field zone in the 0.5–2.5 THz range. We map the plasmon dispersion, which reveals a coupled plasmon–phonon polariton interaction. The near-field spectra show a higher contrast of the upper polariton branch in comparison with far-field observations. The information revealed by aperture near-field spectroscopy could deepen our understanding of the behavior of Dirac plasmons, leading to the potential development of real-world TI devices.

42 ENGINEERING↗
DOE OSTI2023

Induced superconductivity in the two-dimensional topological insulator phase of cadmium arsenide

Hybrid structures between conventional, s-wave superconductors, and two-dimensional topological insulators (2D TIs) are a promising route to topological superconductivity. Here, we investigate planar Josephson junctions fabricated from hybrid structures that use thin films of cadmium arsenide (Cd3As2) as the 2D TI material. Measurements of superconducting interference patterns in a perpendicular magnetic field are used to extract information about the spatial distribution of the supercurrent. We show that the interference patterns are distinctly different in junctions with and without mesa-isolation. In mesa-defined junctions, the bulk of the 2D TI appears to be almost completely shunted by supercurrent flowing along the edges, whereas the supercurrent is much more uniform across the junction when the Cd3As2 film extends beyond the device. We discuss the possible origins of the observed behaviors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Atomic-Scale Characterization of Dilute Dopants in Topological Insulators via STEM–EDS Using Registration and Cell Averaging Techniques

Magnetic dopants in three-dimensional topological insulators (TIs) offer a promising avenue for realizing the quantum anomalous Hall effect (QAHE) without the necessity for an external magnetic field. Understanding the relationship between site occupancy of magnetic dopant elements and their effect on macroscopic property is crucial for controlling the QAHE. By combining atomic-scale energy-dispersive X-ray spectroscopy (EDS) maps obtained by aberration-corrected scanning transmission electron microscopy (AC-STEM) and novel data processing methodologies, including semi-automatic lattice averaging and frame registration, we have determined the substitutional sites of Mn atoms within the 1.2% Mn-doped Sb 2 Te 3 crystal. More importantly, the methodology developed in this study extends beyond Mn-doped Sb 2 Te 3 to other quantum materials, traditional semiconductors, and even electron irradiation sensitive materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Robustness of topological insulating phase against vacancy, vacancy cluster, and grain boundary bulk defects

One distinguished property of the topological insulator (TI) is its robust quantized edge conductance against edge defect. However, this robustness, underlined by the topological principle of bulk-boundary correspondence, is conditioned by assuming a perfect bulk. Here, we investigate the robustness of the TI phase against bulk defects, including vacancy (VA), vacancy cluster (VC), and grain boundary (GB), instead of edge defect. In this work, based on a tight-binding model analysis, we show that a two-dimensional (2D) TI phase, as characterized by a nonzero spin Bott index, will vanish beyond a critical VA concentration ($n^\text{c}_\text{v}$). Generally, $n^\text{c}_\text{v}$ decreases monotonically with the decreasing topological gap induced by spin-orbit coupling. Interestingly, the $n^\text{c}_\text{v}$ to destroy the topological order, namely, the robustness of the TI phase, is shown to be increased by the presence of VCs but decreased by GBs. As a specific example of a large-gap 2D TI, we further show that the surface-supported monolayer Bi can sustain a nontrivial topology up to $n^\text{c}_\text{v}$ ~ 17%, based on a density-functional theory–Wannier-function calculation. Our findings should provide useful guidance for future experimental studies of effects of defects on TIs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Orbital contributions in the element-resolved valence electronic structure of Bi 2 Se 3

In this work, we studied the bulk band structure of a topological insulator (TI) Bi 2 Se 3 and determined the contributions of the Bi and Se orbital states to the valence bands using standing-wave excited hard x-ray photoemission spectroscopy (SW-HAXPES). This SW technique can provide the element-resolved information and extract individual Bi and Se contributions to the Bi2Se3 valence band. Comparisons with density-functional theory calculations (local density approximation and GW) reveal that the Bi 6s, Bi 6p, and Se 4p states are dominant in the Bi 2 Se 3 HAXPES valence band. Furthermore, these findings pave a way for studying the element-resolved band structure and orbital contributions of this class of TIs.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Edge spin transport in the disordered two-dimensional topological insulator $\mathrm{WTe_2}$

The spin conductance of two-dimensional topological insulators (2D TIs) is not expected to be quantized in the presence of perturbations that break the spin-rotational symmetry. However, the deviation from the pristine-limit quantization has yet to be studied in detail. In this paper, we define the spin current operator for the helical edge modes of a 2D TI and introduce a four-terminal setup to measure spin conductances. Using the developed formalism, we consider the effects of disorder terms that break spin-rotational symmetry or give rise to edge-to-edge coupling. We identify a key role played by spin torque in an out-of-equilibrium edge. We then utilize a tight-binding model of topological monolayer $\mathrm{WTe_2}$ and scattering matrix formalism to numerically study spin transport in a four-terminal 2D TI device. In particular, we calculate the spin conductances and characteristic spin decay length in the presence of magnetic disorder. In addition, we also study the effects of interedge scattering in a quantum point contact geometry. Here we find that the spin Hall conductance is surprisingly robust to spin symmetry-breaking perturbations, as long as time-reversal symmetry is preserved and interedge scattering is weak.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Unraveling the Topological Phase of ZrTe 5 via Magnetoinfrared Spectroscopy

For materials near the phase boundary between weak and strong topological insulators (TIs), their band topology depends on the band alignment, with the inverted (normal) band corresponding to the strong (weak) TI phase. Here, taking the anisotropic transition-metal pentatelluride ZrTe 5 as an example, we show that the band inversion manifests itself as a second extremum (band gap) in the layer stacking direction, which can be probed experimentally via magnetoinfrared spectroscopy. Specifically, we find that the band anisotropy of ZrTe 5 features a slow dispersion in the layer stacking direction, along with an additional set of optical transitions from a band gap next to the Brillouin zone center. Furthermore, our work identifies ZrTe 5 as a strong TI at liquid helium temperature and provides a new perspective in determining band inversion in layered topological materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Exchange-Driven Intermixing of Bulk and Topological Surface States by Chiral Excitons in Bi 2 Se 3

Topological surface states (TSS) in the prototypical topological insulator (TI) Bi 2 Se 3 are frequently characterized using optical probes, but electron-hole interactions and their effect on surface localization and optical response of the TSS remain unexplored. Here, we use ab initio calculations to understand excitonic effects in the bulk and surface of Bi 2 Se 3 . We identify multiple series of chiral excitons that exhibit both bulk and TSS character, due to exchange-driven mixing. Further, our results address fundamental questions about the degree to which electron-hole interactions can relax the topological protection of surface states and dipole selection rules for circularly polarized light in TIs by elucidating the complex intermixture of bulk and surface states excited in optical measurements and their coupling to light.

42 ENGINEERING↗
DOE OSTI2020

Plasmon coupling in topological insulator multilayers

Topological insulators (TIs) house two-dimensional Dirac plasmons on their surfaces. In TI thin films, plasmons on the top and bottom surfaces couple electrostatically, giving rise to an acoustic and an optical plasmon mode. By extension, a superlattice comprising TI layers and trivially-insulating layers could house multiple complex plasmon modes which could be used to create a new type of Dirac metamaterial. In this paper, we synthesize TI superlattices, fabricate them into stripe arrays, characterize their optical and plasmonic properties, and model the samples using transfer matrices. Furthermore, we excite plasmon modes that couple to the phonons in the superlattice, resulting in hybrid plasmon phonon polaritons. These modes are modeled using an analytical Fano resonance model and the extracted resonant positions are reproduced by transfer matrix modeling. We also excite an epsilon-near-zero mode in the top dielectric material (Bi 0.5 In 0.5 ) 2 Se 3 . Understanding the behavior of the polariton modes in this complex system will lend insight into the many-body interaction in low-dimensional systems.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Antiferromagnetic Fe Te 2 1 T - phase formation at the Sb 2 Te 3 / Ni 80 Fe 20 interface

Bilayer topological insulator/ferromagnet (TI/FM) heterostructures are promising for spintronic applications due to their low switching energy and therefore power efficiency. Until recently, the reactivity of TI with FM films was overlooked in the spin orbit-torque literature, even though there are reports that it is energetically favorable for TIs to react with transition metals and form interfacial layers. Here, in this study we fabricated a TI/FM heterostructure comprised of molecular beam epitaxy grown Sb 2 Te 3 and DC sputtered Ni 80 Fe 20 . Broadband ferromagnetic resonance revealed spin-pumping evident by the significant enhancement in Gilbert damping, which is likely a signature of the topological surface states or the presence of large spin-orbit-coupling in the adjacent Sb 2 Te 3 . With low-temperature magnetometry, an exchange bias is observed which indicates an exchange interaction between an antiferromagnet (AFM) and an adjacent FM. Cross-section high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) characterization of the Sb 2 Te 3 - Ni 80 Fe 20 bilayer revealed a complex interface showing diffusion of Fe and Ni into the Sb 2 Te 3 film yielding the formation of a FeTe 2 1T-type structural phase. Furthermore, density functional theory calculations revealed that the FeTe 2 1T-phase has an AFM ground state. Due to experimental limitations in the electron energy loss spectroscopy measurements precise chemistry of the interfacial phase could not be determined, therefore it is possible that the FeTe 2 1T and/or an intermixed (Fe 1-x Ni x )Te 2 1T is the AFM interfacial phase contributing to exchange bias in the system. This work emphasizes the chemical complexity of TI/FM interfaces that host novel, metastable magnetic topological phases and require more in-depth studies of other similar interfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Advanced Shuttle Strategies for Parallel QCCD Architectures

Trapped ions (TIs) are at the forefront of quantum computing implementation, offering unparalleled coherence, fidelity, and connectivity. However, the scalability of TI systems is hampered by the limited capacity of individual ion traps, necessitating intricate ion shuttling for advanced computational tasks. The quantum charge-coupled device (QCCD) framework has emerged as a promising solution, facilitating ion mobility for universal quantum computation. Current QCCD architectures predominantly feature a linear topology, which is increasingly recognized as inefficient for complex quantum operations. Anticipating the shift toward more efficacious designs, this article introduces an innovative quantum scheduling strategy optimized for parallel QCCD topologies. Our strategy proposes a probabilistic formula for ion movement, alongside ingenious methods for local layer generation and layer compression, yielding a significant reduction in ion shuttle times. Through simulations, we demonstrate that our strategy not only substantially outstrips the linear model but also exhibits better performance over other parallel strategies that employ greedy algorithms. This is achieved through our nuanced resolution of complexities, such as traffic blocks and trap capacity limitations. The consequent reduction in shuttle operations leads to lower energy consumption and an enhancement in the quantum computer's fidelity, ultimately accelerating program execution times.

43 PARTICLE ACCELERATORS↗