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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

Ovonic switching in tin selenide thin films

Amorphous tin selenide thin films which possess Ovonic switching properties were fabricated using vacuum deposition techniques. Results obtained indicate that memory type Ovonic switching does occur in these films the energy density required for switching from a high impedance to a low impedance state is dependent on the spacing between the electrodes of the device. The switching is also function of the magnitude of the applied voltage pulse. A completely automated computer controlled testing procedure was developed which allows precise control over the shape of the applied voltage switching pulse. A survey of previous experimental and theoretical work in the area of Ovonic switching is also presented.

Baxter, C. R.↗
NASA NTRS1974

The influence of acceleration forces on nucleation, solidification, and deformation processes in tin single crystals

An apparatus was designed and assembled to directionally solidify single crystals under the influence of acceleration forces of various magnitudes. The investigation conducted showed that acceleration gradients produce a preferred growth orientation effect not previously observed for tin. Convection currents at approximately 5-g encourage multiple nucleation and subsequent random orientation of growth direction. Deformation effects such as recrystallization and twinning are observed at acceleration levels greater than 2-g.

Johnston, M. H.↗
NASA NTRS1978

Time-delay-and-integration charge-coupled devices using tin oxide gate technology

Doped tin oxide gates are used in a time-delay-and-integration (TDI) CCD scheme in an effort to develop a stable transparent gate technology. Design characteristics of the system are discussed, including 2 sections of 10 by 9 integration stages, four-phase buried channel construction, and 10 input parallel-in/serial-out output shift register at a video rate of 1.25 MHz. A quantum efficiency of 65% with smooth spectral response is attained by front surface imaging. The suitability of the system for the Landsat program is discussed in terms of TDI-CCD operating parameters.

Thompson, L. L.↗
NASA NTRS1981

Molybdenum-tin as a solar cell metallization system

The operations of solar cell manufacture are briefly examined. The formation of reliable, ohmic, low-loss, and low-cost metal contacts on solar cells is a critical process step in cell manufacturing. In a commonly used process, low-cost metallization is achieved by screen printing a metal powder-glass frit ink on the surface of the Si surface and the conductive metal powder. A technique utilizing a molybdenum-tin alloy for the metal contacts appears to lower the cost of materials and to reduce process complexity. The ink used in this system is formulated from MoO3 with Sn powder and a trace amount of titanium resonate. Resistive losses of the resulting contacts are low because the ink contains no frit. The MoO3 is finally melted and reduced in forming gas (N2+H2) to Mo metal. The resulting Mo is highly reactive which facilitates the Mo-Si bonding.

Boyd, D. W.↗
NASA NTRS1982

Electron loss study of the native oxide of tin

Using electron loss spectroscopy in combination with ion beam depth profiling, it has been established that the oxide of tin formed by electropolishing followed by room temperature aging is metal free and composed of a mixture of SnO2 and SnO. In a fresh oxide layer, the SnO2 is confined to the outer portion of the predominantly SnO oxide. In an aged oxide layer, SnO2 is present up to the oxide/metal interface with an ever decreasing concentration as the interface is approached.

Bevolo, A. J.↗
NASA NTRS1983

On the low-lying states of TiN

A series of CAS SCF and multi-reference CI calculations are used to describe the lowest states of TiN. The bonding in all states is described as a triple bond involving the Ti 3d orbitals. The system has some ionic character as seen from both population analysis and dipole moment. The origins of the excited states are discussed.

Bauschlicher, C. W., Jr.↗
NASA NTRS1984

Electrochemical etching of the semiconductor lead tin telluride

Convective currents during the Bridgman growth of a compound semiconductor lead to temperature fluctuations at the solid-liquid interface. These temperature fluctuations in turn lead to microscopic compositional variations in the solid. Electrochemical principles have been applied to develop three etches which delineate the variations in the compound semiconductor, lead tin telluride, and allow optical studies of the growth kinetics of this material. Use of these etches has shown periodic lines during the initial growth, with indications of oscillatory instabilities developing in later stages of growth, and, finally, complete breakdown of the interface.

Barber, P. G.↗
NASA NTRS1985

Design of an experiment for the production of a foamed tin sample

The purpose of this paper is to present to fellow GAS users a portion of Purdue University's efforts. One of the major experiments in our GAS container is concerned with the experimental production of a foamed metal. A foamed metal is one that contains a significant amount of gas bubbles suspended in its solid volume. Purdue's GAS team proposes to do this with the help of a solid zinc carbonate that gives off carbon dioxide at high temperatures. Because of low energy requirements, the metal used for this experiment is tin. It is hoped that the use of near zero environment will keep the suspended bubbles more uniform than in an earth based process, hence not depleting the physical strength of the material as greatly as is observed on earth.

Eric Wernimont↗
NASA NTRS1986

A procedure to visualize the melt-solid interface in Bridgman grown germanium and lead tin telluride

An X-ray and gamma-ray analysis technique has been developed which makes it possible to observe the melt solid interface during semiconductor crystal growth in a Bridgman furnace. Experiments have been carried out to observe the interface movement and shape in germanium as well as in lead tin telluride by means of the new method, and the results are discussed in detail. X-ray and gamma-ray radiographs of the melt-solid interfaces in the two semiconductor crystal specimens, are provided.

Barber, P. G.↗
NASA NTRS1987

An electrically conductive thermal control surface for spacecraft encountering Low-Earth Orbit (LEO) atomic oxygen indium tin oxide-coated thermal blankets

An organic black thermal blanket material was coated with indium tin oxide (ITO) to prevent blanket degradation in the low Earth orbit (LEO) atomic oxygen environment. The blankets were designed for the Galileo spacecraft. Galileo was initially intended for space shuttle launch and would, therefore, have been exposed to atomic oxygen in LEO for between 10 and 25 hours. Two processes for depositing ITO are described. Thermooptical, electrical, and chemical properties of the ITO film are presented as a function of the deposition process. Results of exposure of the ITO film to atomic oxygen (from a shuttle flight) and radiation exposure (simulated Jovian environment) are also presented. It is shown that the ITO-protected thermal blankets would resist the anticipated LEO oxygen and Jovian radiation yet provide adequate thermooptical and electrical resistance. Reference is made to the ESA Ulysses spacecraft, which also used ITO protection on thermal control surfaces.

Bauer, J. L.↗
NASA NTRS1988

Tool For Tinning Integrated-Circuit Leads

As many as eight flatpacks held. Tool made of fiberglass boards. Clamps row of flatpacks by their leads so leads on opposite side of packages dipped. After dipping, nuts on boards loosened, flatpacks turned around, nuts retightened, and untinned leads dipped. Strips of magnetic material grip leads of flatpacks (made of Kovar, magnetic iron/nickel/cobalt alloy) while boards repositioned. Micrometerlike screw used to adjust exposed width of magnetic strip to suit dimensions of flatpacks. Holds flatpack integrated circuits so leads tinned. Accommodates several flatpacks for simultaneous dipping of leads in molten solder. Adjusts to accept flatpacks in range of sizes.

Prosser, Gregory N.↗