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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

TA-55 FOD Waste Management Requirements

Virtually all activities conducted in the TA-55 FOD (Facility Operations Division) (TA-55, TA-50,RLWTF[Radioactive Liquid Waste Treatment Facility], RLUOB[Radiological Laboratory/Utilities/Office Building], TWF, TA-63 [Transuranic Waste Facility], RANT, TA-54 West [Radioassay Nondestructive Testing Facility], WCRRF [Waste Characterization, Reduction, and Repackaging Facility]and CMR[Chemistry and Metallurgy Research])facilities generate waste. Generation and management of waste arecomplex activitiessubject toFederal and State regulations as well as DOE(Department of Energy)and Laboratory requirements. Improper management of waste can result in civiland/or criminal penalties as well as potential significant impacts to operations.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2024

Eligibility Assessment of Items in the TA-60 Rack Assembly and Alignment Complex Legacy Storage Yard

The U.S. Department of Energy, National Nuclear Security Administration, Los Alamos Field Office (NA-LA), documented and evaluated seven structures in the Technical Area 60 (TA-60) Rack Assembly and Alignment Complex (RAAC) legacy storage yard at Los Alamos National Laboratory (LANL or Laboratory) for listing in the National Register of Historic Places (National Register). This documentation and evaluation was conducted in compliance with Section 106 of the National Historic Preservation Act of 1966, as amended; the Code of Federal Regulations (36 CFR 800); the Programmatic Agreement among the U.S. Department of Energy, National Nuclear Security Administration, Los Alamos Field Office, the New Mexico State Historic Preservation Office and the Advisory Council on Historic Preservation Concerning Management of the Historic Properties at Los Alamos National Laboratory, Los Alamos New Mexico (PA)1; and A Plan for the Management of the Cultural Heritage at Los Alamos National Laboratory, New Mexico (LANL’s Cultural Resources Management Plan (2017). NA-LA makes the following National Register eligibility determinations: la cuna; the rack transporter (jeep, rack trailer, and steering dolly); the Mexia diagnostic rack; the Mexia device canister; the Mexia device mounting stand; and the Mexia target stand are eligible for listing in the National Register, and the second steering dolly is not eligible for listing in the National Register. This National Register evaluation was completed because LANL proposes to develop a consolidated waste facility in TA-60 next to the former RAAC. Across 3.56 acres, LANL proposes to construct an 8,000-square-foot, pre-engineered waste storage building; a 1,500-square-foot office/warehouse building; and 28,500 square feet of covered storage. The development will also include access control features and fencing, parking spaces, and utilities. Additionally, the Laboratory will continue to use the southern part of TA-60-0017 and reuse TA-60-0086 and TA-60-0324 in the development. The consolidated waste facility will operate as a central accumulation area—storing universal waste, mixed low-level (radioactive) waste, hazardous chemicals, and New Mexico special waste—until the waste can be shipped off site.

99 GENERAL AND MISCELLANEOUS↗
NASA NTRS1988

Processing, physical metallurgy and creep of NiAl + Ta and NiAl + Nb alloys

Powder processed NiAl + Ta alloys containing 1, 2, and 4.5 at percent tantalum and NiAl + Nb alloys containing 1 and 2 at percent niobium were developed for improved creep properties. In addition, a cast alloy with 5 at percent tantalum was also studied. Hot extrusion parameters for processing alloys with 1 and 2 at percent of tantalum or niobium were designed. The NiAl + 4.5 at percent Ta alloy could be vacuum hot pressed successfully, even though it could not be extruded. All the phases in the multiphase alloys were identified and the phase transformations studied. The Ni2AlTa in NiAl + 4.5 at percent Ta alloy transforms into a liquid phase above 1700 K. Solutionizing and annealing below this temperature gives rise to a uniform distribution of fine second phase precipitates. Compressive creep properties were evaluated at 1300 K using constant load and constant velocity tests. In the higher strain rate region single phase NiAl + 1 at percent Ta and NiAl + 1 at percent Nb alloys exhibit a stress exponent of 5 characteristic of climb controlled dislocation creep. In slower strain rate regime diffusional creep becomes important. The two phase alloys containing 2 to 5 at percent Ta and 2 at percent Nb show considerable improvement over binary NiAl and single phase alloys. Loose dislocation networks and tangles stabilized by the precipitates were found in the as crept microstructure. The cast alloy which has larger grains and a distribution of fine precipitates shows the maximum improvement over binary NiAl.

Pathare, Viren M.↗
DOE OSTI2020

Materials Data on Ta(ICl)2 by Materials Project

Ta(ICl)2 crystallizes in the orthorhombic Immm space group. The structure is one-dimensional and consists of two Ta(ICl)2 ribbons oriented in the (1, 0, 0) direction. Ta4+ is bonded to four I1- and two equivalent Cl1- atoms to form distorted edge-sharing TaI4Cl2 octahedra. There are two shorter (2.78 Å) and two longer (2.92 Å) Ta–I bond lengths. Both Ta–Cl bond lengths are 2.32 Å. There are two inequivalent I1- sites. In the first I1- site, I1- is bonded in a distorted water-like geometry to two equivalent Ta4+ atoms. In the second I1- site, I1- is bonded in a 2-coordinate geometry to two equivalent Ta4+ atoms. Cl1- is bonded in a single-bond geometry to one Ta4+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Comparative study of helium bubbles in a Ti-Ta alloy and a Ti/Ta nanocomposite

Here, we investigated the size, density, and distribution of helium (He) bubbles in a Ti-Ta single-phase alloy and a Ti/Ta dual-phase nanocomposite using transmission electron microscopy. The Ti/Ta nanocomposite was fabricated via phase separation during high-temperature annealing of the single-phase Ti-Ta alloy. He ion implantation in the Ti-Ta single-phase alloy leads to the formation of nano-scale He bubbles (~1.7 nm in size, ~2.6×10 5 /μm 3 in volumetric density). He bubbles were found to segregate to grain boundaries. Under identical implantation conditions, numerous He bubbles also formed in the Ti/Ta nanocomposite. Closer inspection revealed that He bubbles in the Ti-rich phase are smaller and of higher volumetric density (~1.2 nm, ~8.4×10 5 /μm 3 ) than those in the Tarich phase (~3 nm, ~1.8×10 5 /μm 3 ) and the single-phase alloy. He bubbles were also observed to decorate phase boundaries, but they were generally smaller than those on grain boundaries. These results suggest that Ti/Ta phase boundaries are less conducive to the growth of large He bubbles than grain boundaries in the Ti-Ta single phase alloy.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Sputtered Au–Ta films with tunable electrical resistivity

Gold–tantalum alloy films are attractive for hohlraums used in indirect drive magnetized inertial confinement fusion. A high electrical resistivity of over ~100 µΩ cm at cryogenic temperatures is an essential requirement for allowing an externally imposed pulsed magnetic field to soak through a hohlraum and magnetize the fusion fuel. In this work, we systematically study properties of Au–Ta alloy films in the entire compositional range from pure Au to pure Ta with thicknesses up to 30 µm. These films are made by direct current magnetron co-sputtering on planar substrates. Films are characterized by a combination of high-energy ion scattering, x-ray diffraction, electron microscopy, nanoindentation, and electrical transport measurements. Results show that an alloy with ~80 at.% of Ta forms a metallic glass exhibiting a maximum electrical resistivity of ~300 µΩ cm with a weak temperature dependence in the range of 5–400 K. The deposition of a film with ~80 at.% of Ta onto a sphero-cylindrical substrate for hohlraum fabrication is also demonstrated.

36 MATERIALS SCIENCE↗
DOE OSTI2023

APC Nb 3 Sn superconductors based on internal oxidation of Nb–Ta–Hf alloys

In the last few years, a new type of Nb 3 Sn superconducting composite, containing a high density of artificial pinning centers (APC) generated via an internal oxidation approach, has demonstrated a significantly superior performance relative to present, state-of-the-art commercial Nb3Sn conductors. This was achieved via the internal oxidation of Nb-4at.%Ta-1at.%Zr alloy. On the other hand, our recent studies have shown that internal oxidation of Nb–Ta–Hf alloys can also lead to dramatic improvements in Nb 3 Sn performance. Here in this work we follow up on this latter approach, fabricating a 61-stack APC wire based on the internal oxidation of Nb-4at.%Ta-1at.%Hf alloy, and compare its critical current density (J c ) and irreversibility field with APC wires made using Nb-4at.%Ta-1at.%Zr. A second goal of this work was to improve the filamentary design of APC wires in order to improve their wire quality and electromagnetic stability. Our new modifications have led to significantly improved residual resistivity ratio and stability in the conductors, while still keeping non-Cu J c at or above the conductor J c specification required by the proposed Future Circular Collider. Further improvement via optimization of the wire recipe and design is ongoing. Finally, additional work needed to make APC conductors ready for applications in magnets is discussed.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Local lattice distortions and the structural instabilities in bcc Nb–Ta–Ti–Hf high-entropy alloys: An ab initio computational study

Local lattice distortions (LLD) and structural stability of body-centered cubic (bcc) Nb–Ta–Ti–Hf high-entropy alloys (HEAs) are studied as functions of composition employing ab initio density-functional theory calculations, with specific focus on the role of the relative concentrations of group IV (Ti and Hf) versus group V (Nb and Ta) elements. Calculated results are presented as a function of composition x in Nb x Ta 0.25 Ti (0.75-x)/2 Hf (0.75-x)/2 alloys, for elastic moduli, phonon spectral functions, LLD and structural energy differences for the bcc and competing hexagonal close-packed (hcp) and ω phases. The results highlight the important role of group V elements and LLD in stabilizing the bcc structure. They further reveal how composition x can be tuned to alter both the magnitude of the LLD and structural energy differences. Specifically, the magnitude of the structural energy differences, and elastic and dynamic stability of the bcc phase, are enhanced with increasing x, while the LLD increase in magnitude as this concentration is decreased. The results also show evidence of correlated LLD at lower values of x, reflecting local structural distortions towards the ω phase, but not hcp. The degree of ω-collapse is nevertheless partial i.e., transformation towards this phase is not observed to be complete due to the presence of Ta and Nb. At lower values of x we further find an energy landscape characterized by multiple, nearly degenerate local energy minima for different values of the LLD.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Influence of rolling reduction and annealing on recrystallization and grain structure in Ta-2.5W alloys

The microstructural evolution of wrought Tantalum - 2.5 wt% Tungsten (Ta-2.5W) alloys during thermomechanical processing is critical for optimizing their mechanical reliability in demanding applications such as aerospace, chemical processing, and nuclear technology. Despite the widespread use of Ta-W alloys, a comprehensive understanding of how rolling reduction, annealing temperature, and elemental inhomogeneity interact to determine recrystallization behavior and grain refinement remains incomplete. Here, in this study, we systematically investigate the effects of cold rolling and subsequent annealing on the microstructure of Ta-2.5W, with particular attention to grain orientation, stored energy, and elemental banding. Our results demonstrate that higher rolling reduction rates lower the onset and completion temperatures for recrystallization, resulting in finer and more homogeneous grain structures. Electron backscatter diffraction (EBSD) analysis reveals that grains with a 〈111〉 parallel to the plate normal possess higher stored energy and nucleate recrystallization more readily than grains with a 〈001〉 parallel to the plate normal. Elemental mapping shows that tungsten inhomogeneity leads to localized bands of accelerated recrystallization and hardness variation. These findings provide new insights into the mechanisms of microstructure refinement in Ta-2.5W alloys, offering guidance for tailoring processing routes to achieve superior performance in demanding engineering environments.

Annealing↗
DOE OSTI2021

Mechanical, corrosion, and wear properties of biomedical Ti–Zr–Nb–Ta–Mo high entropy alloys

The microstructures, mechanical, corrosion, and wear behaviors of the Ti x ZrNbTaMo (x = 0.5, 1, 1.5, and 2, molar ratio) high entropy alloys (HEAs) were studied in this work. It was found that the Ti–Zr–Nb–Ta–Mo HEAs showed a dendrite structure with two body-centered-cubic (BCC) solid solution phases. The Ti 0.5 ZrNbTaMo HEA exhibited a high hardness of about 500 HV, high compressive strength approaching 2,600 MPa, and large plastic strain of over 30%. Furthermore, the highly-protective oxide films formed on the surface of Ti–Zr–Nb–Ta–Mo HEAs in the phosphate buffer saline (PBS) solution, which resulted in the high corrosion resistance of the HEAs. The Ti–Zr–Nb–Ta–Mo HEAs exhibited the greater dry- and wet-wear resistance than that of the traditional biomedical Ti6Al4V alloy. The results also indicated that with the decrease in the Ti content, the wear resistance of the Ti–Zr–Nb–Ta–Mo HEAs in the PBS solution improved. Finally, the Ti 0.5 ZrNbTaMo alloy presented the highest corrosive wear resistance among the four HEAs owing to its combination of good mechanical properties and high chemical stability.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Oxygen Distribution and Segregation at Grain Boundaries in Nb and Ta-Encapsulated Nb Thin Films for Superconducting Qubits

We report on atomic-scale analyses of oxygen distribution and segregation at grain boundaries (GBs) of Nb and Ta-encapsulated Nb (Ta/Nb) thin films for superconducting qubits using atom probe tomography (APT) and transmission electron microscopy (TEM). We observe oxygen segregation at grain boundaries (GBs) relative to the oxygen concentration within the grains for both Nb and Ta-capped Nb thin films and find that a higher oxygen concentration in the interior of Nb grains leads to greater oxygen segregation levels at GBs. This finding reveals that the formation of a local equilibrium of oxygen concentration between GBs and grain interiors of Nb is the primary driving force of the oxygen segregation behaviors in Nb and Ta-capped Nb. The enrichment factors (CGB/Cgrain) for oxygen segregation at GBs in Nb and Ta-capped Nb range from 2.4 ± 0.3 to 2.7 ± 0.4. The current results also highlight that controlling oxygen impurities in Nb during film deposition and fabrication processing is important to concomitantly reducing the level of oxygen segregation at GBs in Nb. Finally, we find that increases in the oxygen concentration in both Nb grains and GBs correlate with a suppression in the critical temperature for superconductivity (Tc). Together, our comparative chemical and charge transport property analyses provide atomic-scale insights into a potential mechanism, contributing to the decoherence in superconducting qubits.

Lee, Jaeyel [Fermilab] (ORCID:0000000185429612)↗
DOE OSTI2020

Observation of interacting polaronic gas behavior in Ta-doped TiO 2 thin films via terahertz time-domain spectroscopy

Transparent conductive oxides (TCOs)—materials that have the twin desirable features of high optical transmission and electrical conductivity—play an increasingly significant role in the fields of photovoltaics and information technology. As an excellent TCO, Ta-doped anatase TiO 2 shows great promise for a wide range of applications. Here, terahertz time-domain spectroscopy is used to study the complex optical conductivity $\tilde{σ}$ (ω) of the TCO—heavily Ta-doped TiO 2 thin films with different Ta-doping concentrations, in the frequency range of 0.3–2.7 THz and the temperature range of 10–300 K. Fitting the complex optical conductivity to a Drude-like behavior allows us to extract the temperature dependence of the effective mass, which suggests the existence of many-body large polarons. Moreover, the carrier scattering rate of Ta-doped TiO 2 with different carrier concentrations agrees with the interacting polaron gas theory. Our results suggest that with increasing electron density in TiO 2 , the interaction between polarons is larger and electron–phonon coupling is smaller, which is beneficial for achieving high mobility and conductivity in TiO 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2022

Reactive co-sputtering of ternary Au–Ta–O films with tunable electrical resistivity

Heavy-metal-based films with high electrical resistivity are needed for hohlraums for magnetically-assisted inertial confinement fusion. Here, we study ternary Au-Ta-O films deposited by reactive direct-current magnetron co-sputtering from elemental Au and Ta targets in an oxygen containing atmosphere. By varying O content, the electrical resistivity of films can be tuned in a wide range of ~ 100 - 40,000 μΩ cm. With increasing O content, a drastic increase in resistivity occurs at ~ 45 at.% of O, separating regimes with two different dominant conduction mechanisms attributed to metallic conduction through the Au-Ta alloy matrix (for ≲ 45 at.% of O) and tunneling across insulating Ta 2 O 5 layers separating conducting islands (for ≳ 45 at.% of O). Post-deposition annealing at 300 °C leads to the segregation of Au into ~ 50-nm islands, sharply decreasing the resistivity for films with ≳ 45 at.% of O but not for the metal-like films with lower O content.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Growth and structure of alpha-Ta films for quantum circuit integration

Tantalum films incorporated into superconducting circuits have exhibited low surface losses, resulting in long-lived qubit states. The remaining loss pathways originate in microscopic defects that manifest as two level systems (TLSs) at low temperatures. These defects limit performance, so careful attention to tantalum film structures is critical for optimal use in quantum devices. In this work, we investigate the growth of tantalum using magnetron sputtering on sapphire, Si, and photoresist substrates. In the case of sapphire, we present procedures for the growth of fully-oriented films with α-Ta [1 1 1]//Al2O3 [0 0 0 1] and α-Ta [1 −1 0]//Al2O3 [1 0 −1 0] orientational relationships and having residual resistivity ratio (RRR) ∼ 60 for 220 nm thick films. On Si, we find a complex grain texturing with Ta [1 1 0] normal to the substrate and RRR ∼ 30. We further demonstrate airbridge fabrication using Nb to nucleate α-Ta on photoresist surfaces. For the films on sapphire, resonators show TLS-limited quality factors of 1.3 ± 0.3 × 106 at 10 mK (for a waveguide gap and conductor width of 3 and 6 μm, respectively). Structural characterization using scanning electron microscopy, x-ray diffraction, low temperature transport, secondary ion mass spectrometry, and transmission electron microscopy reveal the dependence of residual impurities and screw dislocation density on processing conditions. The results provide practical insights into the fabrication of advanced superconducting devices including qubit arrays and guide future works on crystallographically deterministic qubit fabrication.

42 ENGINEERING↗
DOE OSTI2025

Combinatorial Deposition of Ultrathick Ta-W-Au-Bi High-Entropy Alloys for Next-Generation Hohlraums by Direct-Current Magnetron Sputtering

Hohlraum temperature calculations with the model by J. H. Hammer and M. D. Rosen predict a higher X-ray drive from Ta-W-Au-Bi high-entropy alloys compared to pure Au and recently developed Ta 4 Au and Au-Bi hohlraums. Here, we study the microstructure and properties of 25-75−µm-thick Ta-W-Au-Bi alloy films deposited via combinatorial direct-current magnetron sputtering. All of the films have promising physical properties, including high electrical resistivity, that satisfy the requirements for magnetically assisted inertial confinement fusion experiments. While porosity tends to increase with increasing Bi content, we also found that films with Bi content > 44 at. % exhibited densification close to the substrate/film interface and formed a single-phase alloy. In conclusion, these findings provide a potential path forward for the development of Ta-W-Au-Bi alloys for next-generation hohlraum materials.

Magnetron sputtering↗
DOE OSTI2022

Superconducting properties of the spin Hall candidate Ta 3 Sb with eightfold degeneracy

We report the synthesis and characterization of phase pure Ta 3 Sb, a material predicted to be topological with eightfold degenerate fermionic states [Bradlyn et al., Science 353, aaf5037 (2016)] and to exhibit a large spin Hall effect [Derunova et al., Sci. Adv. 5, eaav8575 (2019)]. We observe superconductivity in Ta 3 Sb with T c ~0.67 K in both electrical resistivity ρ(T) and specific heat c(T) measurements. Field-dependent measurements yield the superconducting phase diagram with an upper critical field of H c2 (0) ~0.95 T, corresponding to a superconducting coherence length of ξ ≈ 18.6 nm. The gap ratio deduced from specific heat anomaly, 2Δ 0 /k B T c is 3.46, a value close to the Bardeen-Cooper-Schrieffer value of 3.53. From a detailed analysis of both the transport and thermodynamic data within the Ginsburg-Landau (GL) framework, a GL parameter of κ ≈ 90 is obtained, identifying Ta 3 Sb as an extreme type-II superconductor. The observation of superconductivity in an eightfold degenerate fermionic compound with topological surface states and predicted large spin Hall conductance positions Ta 3 Sb as an appealing platform to further explore exotic quantum states in multifold degenerate systems.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Constraints on the Decay of 180⁢𝑚 Ta

180m Ta is a rare nuclear isomer whose decay has never been observed. Its remarkably long lifetime surpasses the half-lives of all other known β and electron capture decays due to the large K-spin differences and small energy differences between the isomeric and lower energy states. Detecting its decay presents a significant experimental challenge but could shed light on neutrino-induced nucleosynthesis mechanisms, the nature of dark matter and K-spin violation. For this study, we repurposed the Majorana Demonstrator, an experimental search for the neutrinoless double-beta decay of 76 Ge using an array of high-purity germanium detectors, to search for the decay of 180m Ta. More than 17 kilograms, the largest amount of tantalum metal ever used for such a search was installed within the ultra-low background Majorana Demonstrator detector array. In this paper we present results from the first year of Ta data taking and provide an updated limit for the 180m Ta half-life on the different decay channels. With new limits up to 1.5 × 10 19 years, we improved existing limits by one to two orders of magnitude. Furthermore, this result is the most sensitive search for a single β and electron capture decay ever achieved.

150 ≤ A ≤ 189↗
DOE OSTI2026

Uniform Whole Wafer Anisotropic Etching of Structural Ta Thin Films

Tantalum (Ta) has promise as a structural material for micromechanical sensors and actuators. Anisotropic etching of alpha (α) phase Ta is required for micromachining applications. Uniform thickness and etch across a full wafer are desirable features. An experimental investigation is conducted to study plasma etching rate and anisotropy in etching α -Ta in relation to pressure and gas flow ratio. A comparatively low toxicity gas, carbon tetrafluoride (CF4), and argon (Ar) are used. Spectrometry by optical emission spectrometry (OES) and residual gas analysis (RGA) are employed to characterize the plasma to gain insight into the etch mechanisms. At low flow, the etch rate is slow due to an inadequate supply of the etching gas, CF4. The etch rate is also slowed at high flow due to a reduced CF4 residence time. Flow and pressure conditions to achieve a good etch rate and vertical sidewalls are identified and explained by means of a full factorial experiment coupled with emission spectra. Finally, with these conditions, uniform etching of 2.5 μm thick α-Ta across a 4-inch wafer is demonstrated.

36 MATERIALS SCIENCE↗