Frequency discriminator for pfm signals.
Frequency discriminator circuit with output voltage directly proportional to input frequency for rapid sampling of PFM telemetry signals
SIGNAL DISCRIMINATOR↗
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Results for “TRANSISTOR AMPLIFIER”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Majority-voted logic fail-sense circuit
Fail-sense circuit has majority-voted logic component which receives three error voltage signals that are sensed at single point by three error amplifiers. If transistor shorts, only one signal is required to operate; if transistor opens, two signals are required.
Mclyman, W. T.↗
RFI receiver
An S-band radio frequency interference (RFI) receiver to analyze and identify sources of RFI problems in the Deep Space Network DSN tracking stations is described. The RFI receiver is a constant gain, double conversion, open loop receiver with dual sine/cosine channel outputs, providing a total of 20 MHZ monitoring capability. This receiver is computer controlled using a MODCOMP II miniprocessor. The RFI receiver has been designed to operate at a 150 Kelvin system noise temperature accomplished by cascading two low noise field effect transistor (FET) amplifiers for the receiver front-end. The first stage low noise FET amplifier is mounted at the feed horn to minimize any cable losses to achieve a lower system noise temperature. The receiver is tunable over the frequency range of 2150 to 2450 MHz in both sine/cosine output channels with a resolution of 100 kHz.
Lay, R.↗
High sensitivity operation of discrete solid state detectors of 4 K
Techniques are described to allow operation of discrete solid state detectors at 4 K with optimized junction field effect transistor (JFET) amplifiers. Three detector types cover the 0.6-4 micron spectral range with a noise equivalent power (NEP) of approximately 10 to the -16th per sq rt Hz for two of the types and potential improvement to this performance for the third. Lower NEPs can be anticipated at longer IR wavelengths.
Rieke, G. H.↗
Cryogenic telescope on the Infrared Astronomical Satellite (IRAS)
The Infrared Astronomical Satellite (IRAS) has completed an unbiased all-sky survey at wavelengths from 10 to 100 microns. The design and performance of the focal plane array is described with emphasis on in-orbit measurements of the sensitivity and stability. In the four broad spectral bands centered at 12, 25, 60, and 100 microns, the system noise equivalent flux density (NEFD) values are in Jy/(Square root of Hz), 0.03, 0.025, 0.046, and 0.21, respectively (Jansky = 10 to the -26th W/sq m/Hz). For point sources, a single scan at the survey rate of 3.8 arcmin/s yields limiting flux densities at the 3-sigma confidence level of 0.36, 0.30, 0.39, and 1.2 Jy. The dc stability of the junction field effect transistor (JFET) amplifiers and the excellent off-axis rejection of the telescope permit total flux measurements of extended infrared emission at levels below 6,000,000 Jy/sr. Response of the extrinsic silicon and germanium photo-detectors to ionizing radiation is described.
Low, F. J.↗
Low-noise cryogenic transmission line
New low-noise cryogenic input transmission lines have been developed for the Deep Space Network (DSN) at 1.668 GHz for cryogenically cooled Field Effect Transistors (FET) and High Electron Mobility Transistor (HEMT) amplifiers. These amplifiers exhibit very low noise temperatures of 5 K to 15 K, making the requirements for a low-noise input transmission line critical. Noise contribution to the total amplifier system from the low-noise line is less than 0.5 K for both the 1.668-GHz and 2.25-GHz FET systems. The 1.668-GHz input line was installed in six FET systems which were implemented in the DSN for the Venus Balloon Experiment. The 2.25-GHz input line has been implemented in three FET systems for the DSN 34-m HEF antennas, and the design is currently being considered for use at higher frequencies.
Norris, D.↗
Charge transfer efficiency measurements at low signal levels on STIS/SOHO TK1024 CCD's
Charge transfer efficiency (CTE) test methods are reviewed, and the results and conclusions of the tests are given. The test methods have been utilized to describe the CTE characteristics of the Tektronix 1024 by 1024 CCD to optimize low dark current, low readout noise, and high CTE at low signal levels. CTE modelling is described, and three test methods are set forth and compared. The Fe-55 X-ray response method utilizes the response of a CCD to X-ray photons from the radioactive source Fe-55. The extended pixel edge response method employs the measurement of the charge lost to successive pixels by a known initial signal as it is shifted through the array. The charge injection method consists of charge injection through the output amplifier reset transistor. These measurements were performed on several devices with known CTEs. The CTEs are found to be in agreement for the three methods, making application and test requirements the principal criteria for their use.
Orbock, J. D.↗
Infrared Multiple-Quantum-Well Phototransistor
Proposed npn AlxGa1-xAs phototransistor incorporates multiple-quantum-well (MQW) infrared photodetector. Has n-doped contacts and is embedded between p-doped base region and n-doped collector region of transistor. Photocurrent amplified, and dark current suppressed.
Borenstain, Shmuel I.↗
Cosmic background radiation anisotropy at degree angular scales - Further results from the South Pole
We report further results from the University of California at Santa Barbara program to measure anisotropy in the cosmic background radiation at angular scales near 1 deg, an angular range corresponding to the largest scales where structure is observed. A 30 GHz high electron mobility transistor amplifier-based detector was coupled to the Advanced Cosmic Microwave Explorer, a 1 m off-axis Gregorian telescope. We present data that represent 64 of the total of 500 hr acquired with this system during the 1990-1991 season. The data have a statistical error of 13.5/micro-K/pixel. These are the smallest error bars of any data set of this type published to date. The data contain a significant signal with a maximum likelihood Delta T/T roughly 1 x 10 exp -5. The spectrum of the signal seen in slightly less than 2 sigma away from the thermal spectrum expected of primordial fluctuations in the cosmic background radiation. If the source of the fluctuations is primordial, then the data are consistent with cold dark matter scenarios when normalized to the large-scale anisotropy observed by COBE, while if the origin of the signal is foreground emission or another form of contaminant then the data are marginally inconsistent with standard cold dark matter models. In either case, the data are sufficiently sensitive to provide a crucial test of many models.
Schuster, Jeffrey↗
Focal plane infrared readout circuit
An infrared imager, such as a spectrometer, includes multiple infrared photodetectors and readout circuits for reading out signals from the photodetectors. Each readout circuit includes a buffered direct injection input circuit including a differential amplifier with active feedback provided through an injection transistor. The differential amplifier includes a pair of input transistors, a pair of cascode transistors and a current mirror load. Photocurrent from a photodetector can be injected onto an integration capacitor in the readout circuit with high injection efficiency at high speed. A high speed, low noise, wide dynamic range linear infrared multiplexer array for reading out infrared detectors with large capacitances can be achieved even when short exposure times are used. The effect of image lag can be reduced.
Pain, Bedabrata↗
Systematic Destruction of Electronic Parts for Aid in Electronic Failure Analysis
NASA analyzes electrical, electronic, and electromechanical (EEE) parts used in space vehicles to understand failure modes of these components. Operational amplifiers and transistors are two examples of EEE parts critical to NASA missions that can fail due to electrical overstress (EOS). EOS is the result of voltage or current over time conditions that exceeds a component s specification limit. The objective of this study was to provide known voltage pulses over well-defined time intervals to determine the type and extent of damage imparted to the device. The amount of current was not controlled but measured so that pulse energy was determined. The damage was ascertained electrically using curve trace plots and optically using various metallographic techniques. The resulting data can be used to build a database of physical evidence to compare to damaged components removed from flight avionics. The comparison will provide the avionics failure analyst necessary information about voltage and times that caused flight or test failures when no other electrical data is available.
Decker, S. E.↗
Three MMIC Amplifiers for the 120-to-200 GHz Frequency Band
Closely following the development reported in the immediately preceding article, three new monolithic microwave integrated circuit (MMIC) amplifiers that would operate in the 120-to-200-GHz frequency band have been designed and are under construction at this writing. The active devices in these amplifiers are InP high-electron-mobility transistors (HEMTs). These amplifiers (see figure) are denoted the LSLNA150, the LSA200, and the LSA185, respectively. Like the amplifiers reported in the immediately preceding article, the LSLNA150 (1) is intended to be a prototype of low-noise amplifiers (LNAs) to be incorporated into spaceborne instruments for sensing cosmic microwave background radiation and (2) has potential for terrestrial use in electronic test equipment, passive millimeter-wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The HEMTs in this amplifier were fabricated according to 0.08- m design rules of a commercial product line of InP HEMT MMICs at HRL Laboratories, LLC, with a gate geometry of 2 fingers, each 15 m wide. On the basis of computational simulations, this amplifier is designed to afford at least 15 dB of gain, with a noise figure of no more than about 6 dB, at frequencies from 120 to 160 GHz. The measured results of the amplifier are shown next to the chip photo, with a gain of 16 dB at 150 GHz. Noise figure work is ongoing. The LSA200 and the LSA185 are intended to be prototypes of transmitting power amplifiers for use at frequencies between about 180 and about 200 GHz. These amplifiers have also been fabricated according to rules of the aforesaid commercial product line of InP HEMT MMICs, except that the HEMTs in these amplifiers are characterized by a gate geometry of 4 fingers, each 37 m wide. The measured peak performance of the LSA200 is characterized by a gain of about 1.4 dB at a frequency of 190 GHz; the measured peak performance of the LSA185 is characterized by a gain of about 2.7 dB at a frequency of 181 GHz. The measured gain results of each chip are shown next to their respective photos.
Samoska, Lorene↗
Tiny biomedical amplifier combines high performance, low power drain
Transistorized, portable, high performance amplifier with low power drain facilitates biomedical studies on mobile subjects. This device, which utilizes a differential input to obtain a common-mode rejection, is used for amplifying electrocardiogram and electromyogram signals.
Deboo, G. J.↗
Cryogenic Amplifier Based Receivers at Submillimeter Wavelengths
The operating frequency of InP high electron mobility transistor (HEMT) based amplifiers has moved well in the submillimeter-wave frequencies over the last couple of years. Working amplifiers with usable gain in waveguide packages has been reported beyond 700 GHz. When cooled cryogenically, they have shown substantial improvement in their noise temperature. This has opened up the real possibility of cryogenic amplifier based heterodyne receivers at submillimeter wavelengths for ground-based, air-borne, and space-based instruments for astrophysics, planetary, and Earth science applications. This paper provides an overview of the science applications at submillimeter wavelengths that will benefit from this technology. It also describes the current state of the InP HEMT based cryogenic amplifier receivers at submillimeter wavelengths.
cryogenically cooled superconductorinsulator- supe↗
A study of advanced infrared detectors for use in planetary spectroscopy Semiannual report, 1 Oct. 1966 - 31 Mar. 1967
Field effect transistor and parametric amplifier characteristics, and bolometer fabrication for advanced astronomical infrared detectors
BOLOMETER↗
Mathematical Models of the Common-Source and Common-Gate Amplifiers using a Metal-Ferroelectric-Semiconductor Field effect Transistor
Mathematical models of the common-source and common-gate amplifiers using metal-ferroelectric- semiconductor field effect transistors (MOSFETs) are developed in this paper. The models are compared against data collected with MOSFETs of varying channel lengths and widths, and circuit parameters such as biasing conditions are varied as well. Considerations are made for the capacitance formed by the ferroelectric layer present between the gate and substrate of the transistors. Comparisons between the modeled and measured data are presented in depth as well as differences and advantages as compared to the performance of each circuit using a MOSFET.
Hunt, Mitchell↗
Extended Characterization of the Common-Source and Common-Gate Amplifiers using a Metal-Ferroelectric-Semiconductor Field Effect Transistor
Collected data for both common-source and common-gate amplifiers is presented in this paper. Characterizations of the two amplifier circuits using metal-ferroelectric-semiconductor field effect transistors (MFSFETs) are developed with wider input frequency ranges and varying device sizes compared to earlier characterizations. The effects of the ferroelectric layer's capacitance and variation load, quiescent point, or input signal on each circuit are discussed. Comparisons between the MFSFET and MOSFET circuit operation and performance are discussed at length as well as applications and advantages for the MFSFETs.
Hunt, Mitchell↗
Field Effect Transistor /FET/ circuit for variable gin amplifiers
Amplifier circuit using two FETs combines improved input and output impedances with relatively large signal handling capability and an immunity from adverse effects of automatic gain control. Circuit has sources and drains in parallel plus a resistive divider for signal and bias to either of the gate terminals.
Spaid, G. H.↗