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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

On the elastocaloric effect in CuAlBe shape memory alloys: A quantitative phase-field modeling approach

We report the reversible stress-induced phase transformation in shape memory alloys (SMAs) is a dissipative process during which heat is absorbed or released. The inherent temperature variations inside the material has an elastocaloric effect (eCE) with appealing applications in solid-state cooling technology such as compact and efficient on-board refrigeration system for eletronic devices. In this manuscript, we conduct the first study of eCE of CuAlBe SMAs utilizing phase-field modeling. For an applied stress of 500 MPa, the results for polycrystalline Cu-Al11-2Be (at. %) show a minimum adiabatic unloading temperature change of -10 K over a pseudoelastic window of 40 K. In the absence of plastic deformation, the material demonstrates good reproducibility of the eCE over a few loading–unloading cycles. The presence of plastic deformation is found to cause functional fatigue that deteriorates the cooling capacity; however, the coefficient of performance only decreases from 9.04 to 8.03, which is still a very good value. These results place CuAlBe as a frontrunner SMA for solid-state cooling compared to the expensive NiTi.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Anodized Aluminum Oxide Membrane Ionic Memristors

Memory effect in ion transport (IT) at the solid–solution interface is uniquely attractive in that the conductance depends on or “memorizes” the previous states. Hysteretic and rectified transport properties offer exciting potential to developing advanced iontronics and neuromorphic functions, improving the efficiency of energy conversion and electrochemical processes, and overcoming the selectivity-throughput bottleneck in the enrichment of low abundant species for environment- and energy-friendly separations, among others. Herein, memory effects are discovered in the rectified electrokinetic IT through anodized aluminum oxide (AAO) membranes containing densely packed highly ordered nanochannels (10 10 per cm 2 ). Characteristic memristor responses of pinched current–potential loops are resolved in voltammetric experiments and successfully reproduced through finite element simulation. Excitatory and inhibitory conductance states are shown to arise from the enrichment and depletion of mobile charge carriers. Structurewise, the transport symmetry is broken by the barrier oxide layer (BOL) on the one end of the cylindrical nanochannels across the AAO membranes. Charge selectivity is attributed to the gradient(s) of the space charge density across the BOL characterized by depth profiling via X-ray photoelectron spectroscopy analysis. The space charge gradient(s) overcomes the fundamental limitation of widely exploited surface charge effects to enable intense rectification and hysteresis prevailing at very high ionic concentrations up to 1–2 M. A new strategy is developed for controlling the preferential IT direction and selectivity via counterion intercalation and extraction/exchange. Mechanistic understanding is further confirmed through parameter variations such as potential scan rate and ionic strength, which also demonstrates convenient controls of the related functions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Vanadium spin qubits as telecom quantum emitters in silicon carbide

Solid-state quantum emitters with spin registers are promising platforms for quantum communication, yet few emit in the narrow telecom band necessary for low-loss fiber networks. Here, we create and isolate near-surface single vanadium dopants in silicon carbide (SiC) with stable and narrow emission in the O band, with brightness allowing cavity-free detection in a wafer-scale material. In vanadium ensembles, we characterize the complex d 1 orbital physics in all five available sites in 4H-SiC and 6H-SiC. The optical transitions are sensitive to mass shifts from local silicon and carbon isotopes, enabling optically resolved nuclear spin registers. Optically detected magnetic resonance in the ground and excited orbital states reveals a variety of hyperfine interactions with the vanadium nuclear spin and clock transitions for quantum memories. Last, we demonstrate coherent quantum control of the spin state. These results provide a path for telecom emitters in the solid state for quantum applications.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2022

Phononic bus for coherent interfaces between a superconducting quantum processor, spin memory, and photonic quantum networks

A hybrid quantum system performs high-fidelity quantum state transduction between a superconducting (SC) microwave qubit and the ground state spin system of a solid-state artificial atom. This transduction is mediated via an acoustic bus connected by piezoelectric transducers to the SC microwave qubit. For SC circuit qubits and diamond silicon vacancy centers in an optimized phononic cavity, the system can achieve quantum state transduction with fidelity exceeding 99% at a MHz-scale bandwidth. By combining the complementary strengths of SC circuit quantum computing and artificial atoms, the hybrid quantum system provides high-fidelity qubit gates with long-lived quantum memory, high-fidelity measurement, large qubit number, reconfigurable qubit connectivity, and high-fidelity state and gate teleportation through optical quantum networks.

Englund, Dirk Robert↗
DOE OSTI2025

Minimal cyclic behavior in sheared amorphous solids

Although jammed packings of soft spheres exist in potential energy landscapes with a vast number of minima, when subjected to cyclic shear they may revisit the same configurations repeatedly. Simple hysteretic spin models, in which particle rearrangements are represented by interacting spin flips called hysterons, capture many features of this periodic behavior. Yet it has been unclear to what extent individual rearrangements can be described by such binary objects and how such objects interact with one another. Using a particularly sensitive algorithm, we identify rearrangements in simulated jammed packings and select pairs of rearrangements that undo one another to create periodic cyclic behavior. We find that the rearrangement pairs surprisingly persist down to the smallest increments in strain, even in the smallest systems we can study. We explore the statistics of these rearrangement pairs and find that there is a relation between the amount of hysteresis and the energy drop and mean-square displacement of the particles; these results are inconsistent with the scaling found in models that treat rearrangements as localized buckling events. Finally, our analysis shows that there is no clean distinction between the particle motions that represent the identity of a single, individual rearrangement and the particle motions that lead to interactions between separated rearrangements or hysterons. These results offer insight into how complex systems such as amorphous solids can reach a limit cycle.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Encapsulation Enhances the Quantum Coherence of a Solid‐State Molecular Spin Qubit

Spins within molecules benefit from the atomistic control of synthetic chemistry for the realization of qubits. One advantage is that the quantum superpositions of the spin states encoding the qubit can be coherently manipulated using electromagnetic radiation. The main challenge is the fragility of these superpositions when qubits are to partake of solid-state devices. We address this issue with a supramolecular approach for protecting molecular spin qubits against decoherence. The molecular qubit [Cr(ox)3]3- has been encapsulated inside the diamagnetic triple-stranded helicate [Zn2L3]4+ (L is a bis-pyrazolylpyridine ligand). The quantum coherence of the protected qubit is then analyzed with pulsed EPR spectroscopy and compared with the unprotected qubit, both in solution and in the solid state. Crucially, the spin-spin relaxation in the solid state has been examined within diamagnetic crystal lattices of the isostructural ([Al(ox)3]@[Zn2L3])+ or [Al(ox)3]3- assemblies, respectively, doped with the Cr3+ qubit in two different (<10%) concentrations. The study unveils a surprising increase of the phase memory time of the qubit upon encapsulation only in the solid. Spin-lattice relaxation times also exhibit a significant enhancement, as established from inversion recovery pulse sequences and from slow relaxation of the magnetization of the protected qubit, not featured by the free qubit.

Swain, Abinash↗
DOE OSTI2020

Distinctive exchange bias and unusual memory effects in magnetically compensated Pr 0.75 Gd 0.25 ScGe

Tuning the chemistry of materials often leads to discoveries of interesting phenomena that expand basic science and support practical applications. Here we show how different spin–orbit coupling in light and heavy lanthanides can be exploited to create complex magnetic ground states and thereby unusual spontaneous exchange bias (SEB), conventional exchange bias (CEB), and magnetic memory effects in almost ideally magnetically compensated Pr 0.75 Gd 0.25 ScGe, which is a representative of the PrScGe–GdScGe solid solution. We report the synthesis and detailed characterization of Pr 0.75 Gd 0.25 ScGe by X-ray powder diffraction, scanning electron microscopy, and magnetization measurements in magnetic fields up to 140 kOe. Partial substitution of a light lanthanide, Pr, with a heavy lanthanide, Gd, results in a complex magnetic ground state, which includes large spontaneous and conventional exchange biases reaching magnitudes of ~1.7 kOe and ~3.5 kOe, respectively, at T = 2 K, as well as shape dependent magnetic compensation and bias phenomena occurring in small external fields.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

On the Mechanisms of Formation of Memory Channels and Development of Negative Differential Resistance in Solid Solutions of the ТlInТe{sup 2}–ТlYbТe{sup 2} System

The behavior of an electronic subsystem is investigated in the course of formation and development of a memory channel in solid solutions of the TlInTe2–TlYbTe2 system. An analysis of the current-voltage characteristics allows getting an insight into the reason for a sharp change in electrical conductance of the specimens under study during their transition from the high-resistance to high-conductance state and the reasons for the well known instability of threshold converters, which makes it possible to design devices with high threshold voltage stability.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Neuromorphic learning with Mott insulator NiO

Habituation and sensitization (nonassociative learning) are among the most fundamental forms of learning and memory behavior present in organisms that enable adaptation and learning in dynamic environments. Emulating such features of intelligence found in nature in the solid state can serve as inspiration for algorithmic simulations in artificial neural networks and potential use in neuromorphic computing. In this work, we demonstrate nonassociative learning with a prototypical Mott insulator, nickel oxide (NiO), under a variety of external stimuli at and above room temperature. Similar to biological species such as Aplysia, habituation and sensitization of NiO possess time-dependent plasticity relying on both strength and time interval between stimuli. A combination of experimental approaches and first-principles calculations reveals that such learning behavior of NiO results from dynamic modulation of its defect and electronic structure. An artificial neural network model inspired by such nonassociative learning is simulated to show advantages for an unsupervised clustering task in accuracy and reducing catastrophic interference, which could help mitigate the stability–plasticity dilemma. Mott insulators can therefore serve as building blocks to examine learning behavior noted in biology and inspire new learning algorithms for artificial intelligence.

42 ENGINEERING↗
DOE OSTI2018

Ionic Tuning of Cobaltites at the Nanoscale

Control of materials through custom design of ionic distributions is one of the most promising approaches for developing future technologies ranging from spintronic logic and memory devices to energy storage. Perovskites have shown particular promise for ionic-devices due to their high ion mobility and sensitivity to chemical stoichiometry. In this work, we demonstrate control of ion distributions in (La,Sr)CoO3. Commensurate with control of the oxygen stoichiometry, the Co valence and saturation magnetization show a smooth continuous variation. In contrast, magnetoresistance measurements show a sharp, step-wise transition in the magnetic anisotropy and resistivity over the same range of oxygen stoichiometry. These results suggest significant phase separation, with conductive magnetic regions and oxygen-deficient, insulating, non-magnetic regions, forming percolated networks. Indeed, X-ray diffraction identifies oxygen vacancy ordering, including the emergence of Brownmillerite ordering. The unusual appearance of the Brownmillerite phase under ambient temperature is further confirmed by high resolution scanning transmission electron microscopy. This work demonstrates room-temperature ionic control of magnetism, electrical conductivity and crystalline structure, in a 40 nm film, presenting new opportunities for ionic devices that leverage multiple material properties.

thin films, magnetism, xmcd, pnr, STEM, defects↗
DOE OSTI2016

Efficient photon coupling from a diamond nitrogen vacancy center by integration with silica fiber

A central goal in quantum information science is to efficiently interface photons with single optical modes for quantum networking and distributed quantum computing. Here, we introduce and experimentally demonstrate a compact and efficient method for the low-loss coupling of a solid-state qubit, the nitrogen vacancy (NV) center in diamond, with a single-mode optical fiber. In this approach, single-mode tapered diamond waveguides containing exactly one high quality NV memory are selected and integrated on tapered silica fibers. Numerical optimization of an adiabatic coupler indicates that near-unity-efficiency photon transfer is possible between the two modes. Experimentally, we find an overall collection efficiency between 16% and 37% and estimate a single photon count rate at saturation above 700 kHz. This integrated system enables robust, alignment-free, and efficient interfacing of single-mode optical fibers with single photon emitters and quantum memories in solids.

Optics↗
DOE OSTI2020

Large-scale integration of artificial atoms in hybrid photonic circuits

A central challenge in developing quantum computers and long-range quantum networks is the distribution of entanglement across many individually controllable qubits. Colour centres in diamond have emerged as leading solid-state ‘artificial atom’ qubits because they enable on-demand remote entanglement, coherent control of over ten ancillae qubits with minute-long coherence times and memory-enhanced quantum communication. A critical next step is to integrate large numbers of artificial atoms with photonic architectures to enable large-scale quantum information processing systems. So far, these efforts have been stymied by qubit inhomogeneities, low device yield and complex device requirements. Here we introduce a process for the high-yield heterogeneous integration of ‘quantum microchiplets’—diamond waveguide arrays containing highly coherent colour centres—on a photonic integrated circuit (PIC). We use this process to realize a 128-channel, defect-free array of germanium-vacancy and silicon-vacancy colour centres in an aluminium nitride PIC. Photoluminescence spectroscopy reveals long-term, stable and narrow average optical linewidths of 54 megahertz (146 megahertz) for germanium-vacancy (silicon-vacancy) emitters, close to the lifetime-limited linewidth of 32 megahertz (93 megahertz). We show that inhomogeneities of individual colour centre optical transitions can be compensated in situ by integrated tuning over 50 gigahertz without linewidth degradation. The ability to assemble large numbers of nearly indistinguishable and tunable artificial atoms into phase-stable PICs marks a key step towards multiplexed quantum repeaters and general-purpose quantum processors

36 MATERIALS SCIENCE↗
DOE OSTI2015

Influence of γ-dose, dopant/codopant and heating rate on thermoluminescence properties of CaWO{sub 4} phosphors

A series of Ca{sub 1-2x}K{sub x}Dy{sub x}WO{sub 4} (x = 0.02, 0.03, 0.04) phosphors were prepared by solid state reaction method and their thermoluminescence properties were investigated. Before thermoluminescence measurements, the sample was heated to 300°C for 1hour and then quenched to room temperature to erase out all the previous radiation memory. The prepared phosphors were irradiated by γ-ray in the dose range 1KGy–5KGy and their glow curves were recorded at an uniform rate of 5°C/s. In order to see the effect of heating rate as well as concentration of dopant/codopant, TL glow curves were also recorded by heating the samples at the rate of 3°C/s and 7°C/s as well as by varying the concentration x = 0.02, 0.03, 0.04.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A nanocryotron memory and logic family

The development of superconducting electronics based on nanocryotrons has been limited so far to few device circuits, in part due to the lack of standard and robust logic cells. Here, we introduce and experimentally demonstrate designs for a set of nanocryotron-based building blocks that can be configured and combined to implement memory and logic functions. The devices were fabricated by patterning a single superconducting layer of niobium nitride and measured in liquid helium on a wide range of operating points. The tests show 10 - 4 bit error rates with above ± 20 % margins up to 50 MHz and the possibility of operating under the effect of an out-of-plane 36 mT magnetic field, with ± 30 % margins at 10 MHz. Additionally, we designed and measured an equivalent delay-flip-flop made of two memory cells to show the possibility of combining multiple building blocks to make larger circuits. These blocks may constitute a solid foundation for the development of nanocryotron logic circuits and finite-state machines with potential applications in the integrated processing and control of superconducting nanowire single-photon detectors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Improving Block-level Efficiency with scsi-mq

Current generation solid-state storage devices are exposing a new bottlenecks in the SCSI and block layers of the Linux kernel, where IO throughput is limited by lock contention, inefficient interrupt handling, and poor memory locality. To address these limitations, the Linux kernel block layer underwent a major rewrite with the blk-mq project to move from a single request queue to a multi-queue model. The Linux SCSI subsystem rework to make use of this new model, known as scsi-mq, has been merged into the Linux kernel and work is underway for dm-multipath support in the upcoming Linux 4.0 kernel. These pieces were necessary to make use of the multi-queue block layer in a Lustre parallel filesystem with high availability requirements. We undertook adding support of the 3.18 kernel to Lustre with scsi-mq and dm-multipath patches to evaluate the potential of these efficiency improvements. In this paper we evaluate the block-level performance of scsi-mq with backing storage hardware representative of a HPC-targerted Lustre filesystem. Our findings show that SCSI write request latency is reduced by as much as 13.6%. Additionally, when profiling the CPU usage of our prototype Lustre filesystem, we found that CPU idle time increased by a factor of 7 with Linux 3.18 and blk-mq as compared to a standard 2.6.32 Linux kernel. Our findings demonstrate increased efficiency of the multi-queue block layer even with disk-based caching storage arrays used in existing parallel filesystems.

Cluster Computing↗
DOE OSTI2023

Tuning the temperature range of superelastic Ni-Ti alloys for elastocaloric cooling via thermal processing

Abstract Caloric cooling enlisting solid-state refrigerants is potentially a promising eco-friendly alternative to conventional cooling based on vapor compression. The most common refrigerant materials for elastocaloric cooling to date are Ni-Ti based superelastic shape memory alloys. Here, we have explored tuning the operation temperature range of Ni 50.8 Ti 49.2 for elastocaloric cooling. In particular, we have studied the effect of thermal treatments (a.k.a. aging) on the transformation temperature, superelasticity, and elastocaloric effects of Ni 50.8 Ti 49.2 shape memory alloy tubes. The isothermal compressive test revealed that the residual strain of thermally-treated Ni-Ti tubes at room temperature approaches zero as aging time is increased. Short-time aging treatment at 400 °C resulted in good superelasticity and elastocaloric cooling performance with a large tunable austenite finish ( A f ) temperature range of 24.7 °C, as determined from the A f temperature of the samples that were aged 5–120 min. The main reason of the property change is the formation of a different amount of Ni 4 Ti 3 precipitates in the NiTi matrix. Our findings show that it is possible to tailor the A f temperature range for development of cascade elastocaloric cooling systems by thermally treating a starting single composition Ni-Ti alloy.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering

Abstract The superior size and power scaling potential of ferroelectric-gated Mott transistors makes them promising building blocks for developing energy-efficient memory and logic applications in the post-Moore’s Law era. The close to metallic carrier density in the Mott channel, however, imposes the bottleneck for achieving substantial field effect modulation via a solid-state gate. Previous studies have focused on optimizing the thickness, charge mobility, and carrier density of single-layer correlated channels, which have only led to moderate resistance switching at room temperature. Here, we report a record high nonvolatile resistance switching ratio of 38,440% at 300 K in a prototype Mott transistor consisting of a ferroelectric PbZr 0.2 Ti 0.8 O 3 gate and an R NiO 3 ( R : rare earth)/La 0.67 Sr 0.33 MnO 3 composite channel. The ultrathin La 0.67 Sr 0.33 MnO 3 buffer layer not only tailors the carrier density profile in R NiO 3 through interfacial charge transfer, as corroborated by first-principles calculations, but also provides an extended screening layer that reduces the depolarization effect in the ferroelectric gate. Our study points to an effective material strategy for the functional design of complex oxide heterointerfaces that harnesses the competing roles of charge in field effect screening and ferroelectric depolarization effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Quantum Logic Enhanced Sensing in Solid-State Spin Ensembles

We demonstrate quantum logic enhanced sensitivity for a macroscopic ensemble of solid-state, hybrid two-qubit sensors. We achieve over a factor of 30 improvement in the single-shot signal-to-noise ratio, translating to an ac magnetic field sensitivity enhancement exceeding an order of magnitude for time-averaged measurements. Using the electronic spins of nitrogen vacancy (NV) centers in diamond as sensors, we leverage the on-site nitrogen nuclear spins of the NV centers as memory qubits, in combination with homogeneous and stable bias and control fields, ensuring that all of the ~10 9 two-qubit sensors are sufficiently identical to permit global control of the NV ensemble spin states. We find quantum logic sensitivity enhancement for multiple measurement protocols with varying optimal sensing intervals, including XY8 and DROID-60 dynamical decoupling, as well as correlation spectroscopy, using an applied ac magnetic field signal. The results are independent of the nature of the target signal and broadly applicable to measurements using NV centers and other solid-state spin ensembles. Furthermore, this work provides a benchmark for macroscopic ensembles of quantum sensors that employ quantum logic or quantum error correction algorithms for enhanced sensitivity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗