Development of an (AlGaAs-Ga As) graded band gap solar cell
The results of an experimental program to develop the epitaxial growth techniques and analytical characterization techniques to fabricate graded bandgap solar cells are reported.
Sahai, R.↗
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Development and fabrication of a solar cell junction processing system
Modifications to the ground plane, to insure a good electrical return path during the pulse discharge, were made using a ring of beryllium copper finger stock attached to the underside of the aluminum ground plate. Experiments on annealing of wafers with ion implantation damage continued. The entire surface of 100 mm diameter wafers were annealed by one pulse for the standard implant (10 keV, phosphorus, 2x10 to the 15th power ions/sq cm). While samples are being fabricated into solar cells for electrical characterization, work is continuing on improvement of the electron beam uniformity and the optimization of the diode parameters. The engineering design was completed and the manufacturing detail drawings were released for fabrication. Assembly of the subcomponents for the exit and entrance locks is almost complete. These components include the cassettes, the indexing mechanisms, main doors, and wafer carrier transfer modules. The 'Y' track and three phase transition track sections are under final assembly and test.
Giesling, R.↗
Development of technologies for welding interconnects to fifty-micron thick silicon solar cells
A program was conducted to develop technologies for welding interconnects to 50 microns thick, 2 by 2 cm solar cells. The cells were characterized with respect to electrical performance, cell thickness, silver contact thickness, contact waviness, bowing, and fracture strength. Weld schedules were independently developed for each of the three cell types and were coincidentally identical. Thermal shock tests (100 cycles from 100 C to -180 C) were performed on 16 cell coupons for each cell type without any weld joint failures or electrical degradation. Three 48 cell modules (one for each cell type) were assembled with 50 microns thick cells, frosted fused silica covers, silver clad Invar interconnectors, and Kapton substrates.
Patterson, R. E.↗
Directional solidification of silicon in carbon crucibles by an oscillating crucible technique
The quality of silicon cast by present techniques is limited by the presence of dislocations and grain boundaries in unseeded growth and by cellular structures with dislocation networks in the case of the seeded growth. To address these concerns, a new method of directional solidification called the oscillating crucible technique (OCT) is developed. During growth, a carbon crucible is oscillated to provide for effective stirring of the melt. This growth technique (seeded growth only), along with material characterization and solar-cell fabrication and testing, is described. Solar-cell efficiencies of up to 13 percent at 100 mW/sq cm area obtained in the single crystalline areas. Minority-carrier diffusion lengths exceeding 100 microns are measured even in the polycrystalline areas of the wafers. Limitations of the present setup and possible future improvements are discussed.
Daud, T.↗
Mate and Dart: An Instrument Package for Characterizing Solar Energy and Atmospheric Dust on Mars
The MATE (Mars Array Technology Experiment) and DART (Dust Accumulation and Removal Test) instruments were developed to fly as part of the Mars ISPP Precursor (MIP) experiment on the (now postponed) Mars-2001 Surveyor Lander. MATE characterizes the solar energy reaching the surface of Mars, and measures the performance and degradation of solar cells under Martian conditions. DART characterizes the dust environment of Mars, measures the effect of settled dust on solar arrays, and investigates methods to mitigate power loss due to dust accumulation.
Landis, Geoffrey A.↗
Fluence Uniformity Measurements in an Electron Accelerator Used for Irradiation of Extended Area Solar Cells and Electronic Circuits for Space Applications
It is common to have liquid crystal displays and electronic circuit boards with area sizes of the order of 20x20 sq cm on board of satellites and space vehicles. Usually irradiating them at different fluence values assesses the radiation damage in these types of devices. As a result, there is a need for a radiation source with large spatial fluence uniformity for the study of the damage by radiation from space in those devices. Kent State University s Program on Electron Beam Technology has access to an electron accelerator used for both research and industrial applications. The electron accelerator produces electrons with energies in the interval from 1 to 5 MeV and a maximum beam power of 150 kW. At such high power levels, the electron beam is continuously scanned back and forth in one dimension in order to provide uniform irradiation and to prevent damage to the sample. This allows for the uniform irradiation of samples with an area of up to 1.32 sq m. This accelerator has been used in the past for the study of radiation damage in solar cells (1). However in order to irradiate extended area solar cells there was a need to measure the uniformity of the irradiation zone in terms of fluence. In this paper the methodology to measure the fluence uniformity on a sample handling system (linear motion system), used for the irradiation of research samples, along the irradiation zone of the above-mentioned facility is described and the results presented. We also illustrate the use of the electron accelerator for the irradiation of large area solar cells (of the order of 156 sq cm) and include in this paper the electrical characterization of these types of solar cells irradiated with 5 MeV electrons to a total fluence of 2.6 x 10(exp 15) e/sq cm.
Uribe, Roberto M.↗
Arcing of negatively biased solar cells in low earth orbit
A set of experiments is described in which the arcing of negatively biased solar cells is examined and characterized in terms of the primary factors that cause such behavior. The experiments are conducted in an ultrahigh vacuum chamber, and an image-intensified CCD camera is employed to monitor UV emission from arc events at the interfacial edge between the cover slip and the solar cell. A bead of encapsulant along the interfacial edge is noted which can be removed to reduce arc frequency, and water contamination is found to further enhance arcing. Frequency of arcing is found to vary indirectly with temperature and directly with exposure to H2O, but no other significant correlations are noted. The sensitivity to H2O vapor is eliminated by simply removing the adhesive/encapsulant, and the corresponding arc-rate performance is low.
Upschulte, B. L.↗
Characterization of deliberately nickel-doped silicon wafers and solar cells
Microstructural and electrical evaluation tests were performed on nickel-doped p-type silicon wafers before and after solar cell fabrication. The concentration levels of nickel in silicon were 5 x 10 to the 14th power, 4 x 10 to the 15th power, and 8 x 10 to the 15th power atoms/cu cm. It was found that nickel precipitated out during the growth process in all three ingots. Clumps of precipitates, some of which exhibited star shape, were present at different depths. If the clumps are distributed at depths approximately 20 micron apart and if they are larger than 10 micron in diameter, degradation occurs in solar cell electrical properties and cell conversion efficiency. The larger the size of the precipitate clump, the greater the degradation in solar cell efficiency. A large grain boundary around the cell effective area acted as a gettering center for the precipitates and impurities and caused improvement in solar cell efficiency. Details of the evaluation test results are given.
Salama, A. M.↗
Characterization of ASEC BSR 2 ohm-cm silicon solar cells with dielectric wraparound contacts as a function of temperature and intensity
Twenty high performance BSR 2 ohm-cm silicon solar cells manufactured by ASEC were evaluated at 1 AU conditions and at low temperature and low intensities representative of deep space. These cells showed evidence of series resistance of 1 AU conditions and approximately 50% had reduced power outputs under deep space conditions. Average efficiency of these cells was 12.4% of 1 AU conditions of 1 SC/+25 C.
Whitaker, A. F.↗
Electrochemical Characterization of InP and GaAs Based Structures for Space Solar Cell Applications.
In this paper the emphasis is on accurate majority carrier concentration EC-V profiling of structures based on Indium Phosphide and Gallium Arsenide, using a newly developed electrolyte based on Hydrogen Flouride, Acetic Acid, Phosphoric Acid, 1-phenyl-2-propanamine and Ammonia Diflouride. Some preliminary data on the use of this electrolyte for determining the energy distribution of surface and deep states of these structures, applicable to fabrication process optimization and radiation induced defects studies of solar cells, are also provided.
Faur, Maria↗
In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions
The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell
Quantum Efficiency↗
Thin silicon solar cell performance characteristics
Refined techniques for surface texturizing, back surface field and back surface reflector formation were evaluated for use with shallow junction, single-crystal silicon solar cells. Each process was characterized individually and collectively as a function of device thickness and bulk resistivity. Among the variables measured and reported are open circuit voltage, short circuit current and spectral response. Substantial improvements were obtained by the utilization of a low cost aluminum paste process to simultaneously remove the unwanted n(+) diffused region, form the back surface field and produce an ohmic contact metallization. The highly effective BSF which results from applying this process has allowed fabrication of cells 0.05 mm thick with initial outputs as high as 79.5 mW/4 sq cm (28 C, AM0) and superior electron radiation tolerance. Cells of 0.02 mm to 0.04 mm thickness have been fabricated with power to mass ratios well in excess of 2 watts per gram.
Gay, C. F.↗
Thermoelastic analysis of solar cell arrays and their material properties
A thermoelastic stress analysis procedure is reported for predicting the thermally induced stresses and failures in silicon solar cell arrays. A prerequisite for the analysis is the characterization of the temperature-dependent thermal and mechanical properties of the solar cell materials. Extensive material property testing was carried out in the temperature range -200 to +200 C for the filter glass, P- and N-type silicon, interconnector metals, solder, and several candidate silicone rubber adhesives. The analysis procedure is applied to several solar cell array design configurations. Results of the analysis indicate the optimum design configuration, with respect to compatible materials, effect of the solder coating, and effect of the interconnector geometry. Good agreement was found between results of the analysis and the test program.
Salama, M. A.↗
Thermoelastic analysis of solar cell arrays and their material properties
Description of a thermoelastic stress analysis procedure for predicting the thermally induced stresses and failures in silicon solar cell arrays. A prerequisite for the analysis is the characterization of the temperature-dependent thermal and mechanical properties of the solar cell materials. Extensive material property testing was carried out in the temperature range from -200 to +200 C for the filter glass, P- and N-type silicon, interconnector metals, solder, and several candidate silicone rubber adhesives. The analysis procedure is applied to several solar cell array design configurations, which were tested in the Space Molecular Sink. Results of the analysis indicate the optimum design configuration with respect to materials and geometry, effect of the solder coating, and effect of the interconnector geometry.
Salama, M. A.↗
Silicon solar cell process. Development, fabrication and analysis
Solar cells were fabricated from unconventional silicon sheets, and the performances were characterized with an emphasis on statistical evaluation. A number of solar cell fabrication processes were used and conversion efficiency was measured under AMO condition at 25 C. Silso solar cells using standard processing showed an average efficiency of about 9.6%. Solar cells with back surface field process showed about the same efficiency as the cells from standard process. Solar cells from grain boundary passivation process did not show any improvements in solar cell performance.
Yoo, H. I.↗
Space photovoltaic modules based on reflective optics
The conceptual design and experimental results for two types of space application concentrator photovoltaic modules, employing reflective optical elements, are presented. The first type is based on the use of compound parabolic concentrators, the second type is based on the use of line-focus parabolic troughs. Lightweight concentrators are formed with nickel foil coated silver with a diamond-like carbon layer protection. Secondary optical elements, including lenses and cones, are introduced for a better matching of concentrators and solar cells. Both types of modules are characterized by concentration ratios in the range 20x to 30x, depending on the chosen range of misorientation angles. The estimated specific parameters of these modules operating with single junction AlGaAs/GaAs solar cells are 240 W/sq m and 3 kg/sq m.
Andreev, V. M.↗
Electrical research on solar cells and photovoltaic materials
The flat-plate solar cell array program which increases the service lifetime of the photovoltaic modules used for terrestrial energy applications is discussed. The current-voltage response characteristics of the solar cells encapsulated in the modules degrade with service time and this degradation places a limitation on the useful lifetime of the modules. The most desirable flat-plate array system involves solar cells consisting of highly polarizable materials with similar electrochemical potentials where the cells are encapsulated in polymers in which ionic concentrations and mobilities are negligibly small. Another possible mechanism limiting the service lifetime of the photovoltaic modules is the gradual loss of the electrical insulation characteristics of the polymer pottant due to water absorption or due to polymer degradation from light or heat effects. The mechanical properties of various polymer pottant materials and of electrochemical corrosion mechanisms in solar cell material are as follows: (1) electrical and ionic resistivity; (2) water absorption kinetics and water solubility limits; and (3) corrosion characterization of various metallization systems used in solar cell construction.
Orehotsky, J.↗
Characterization of the heavily doped emitter and junction regions of silicon solar cells using an electron beam
Heavily doped emitter and junction regions of silicon solar cells are investigated by means of the electron-beam-induced-current (EBIC) technique. Although the experimental EBIC data are collected under three-dimensional conditions, it is analytically demonstrated with two numerical examples that the solutions obtained with one-dimensional numerical modeling are adequate. EBIC data for bare and oxide-covered emitter surfaces are compared with theory. The improvement in collection efficiency when an emitter surface is covered with a 100-A SiO2 film varies with beam energy; for a cell with a junction depth of 0.35 microns, the improvement is about 54 percent at 2 keV.
Luke, K. L.↗