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At least 91 records · Page 5

Ultraviolet /UV/ sensitive phosphors for silicon imaging detectors

The fluorescence properties of UV sensitive organic phosphors and the radiometric properties of phosphor coated silicon detectors in the VUV, UV, and visible wavelengths are described. With evaporated films of coronene and liumogen, effective quantum efficiencies of up to 20% have been achieved on silicon photodiodes in the vacuum UV. With thin films of methylmethacrylate (acrylic), which are doped with organic laser dyes and deposited from solution, detector quantum efficiencies of the order of 15% for wavelengths of 120-165 nm and of 40% for wavelengths above 190 nm have been obtained. The phosphor coatings also act as antireflection coatings and thereby enhance the response of coated devices throughout the visible and near IR.

Viehmann, W.↗

Observing cosmic-ray extensive air showers with a silicon imaging detector

Extensive air showers induced from high-energy cosmic rays provide a window into understanding the most energetic phenomena in the universe. We present a new method for observing these showers using the silicon imaging detector Subaru Hyper Suprime-Cam (HSC). This method has the advantage of being able to measure individual secondary particles. When paired with a surface detector array, silicon imaging detectors like Subaru HSC will be useful for studying the properties of extensive air showers in detail. The following report outlines the first results of observing extensive air showers with Subaru HSC. The potential for reconstructing the incident direction of primary cosmic rays is demonstrated and possible interdisciplinary applications are discussed.

79 ASTRONOMY AND ASTROPHYSICS↗

High resolution, low energy avalanche photodiode X-ray detectors

Silicon avalanche photodiodes have been fabricated, and their performance as X-ray detectors has been measured. Photon sensitivity and energy resolution were measured as a function of size and operating parameters. Noise thresholds as low as 212 eV were obtained at room temperature, and backscatter X-ray fluorescence data were obtained for aluminum and other light elements. It is concluded that the results with the X-ray detector are extremely encouraging, and the performance is challenging the best available proportional counters. While not at the performance level of either cryogenic silicon or HgI2, these device operate at room temperature and can be reproduced in large numbers and with much larger areas than typically achieved with HgI2. In addition, they are rugged and appear to be indefinitely stable.

Farrell, R.↗

Development of a large array of Silicon Drift Detectors for high-rate synchrotron fluorescence spectroscopy

An array of small-area Silicon Drift Detectors (SDD), named Hera, has been developed at Brookhaven National Laboratory (BNL) in the past few years. Its primary application is high-rate spectroscopy at synchrotrons. Each SDD pixel is a 1 mm × 1 mm square to match the footprint of the original diode-based pixel detector called Maia, which was developed for the same application. The replacement of the diode with an SDD allows for better energy resolution at short shaping times and an increased stability of the detector. 32, 96, and 384-channel arrays were designed and fabricated and achieved a Full Width Half Maximum (FWHM) as low as 176 eV at 5.9 keV with peaking time of 1 μs at -13°C. The sensor design, simulation, fabrication, its readout system, and its spectroscopic performance are reported.

47 OTHER INSTRUMENTATION↗

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution for the readout while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest or by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

Kimble, Randy A.↗

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest of by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

Kimble, Randy A.↗

Experimental overview about LANL contributions to the Electron-Ion Collider

This report is a request from the LANL team to design and build the Forward Silicon Tracker (FST) for the Electron-Ion Collider (EIC). The report highlights past accomplishments of LANL and seeks DOE support for continued work for the EIC, including silicon detector R&D; silicon tracker construction and operation; heavy flavor physics development and data analysis.

43 PARTICLE ACCELERATORS↗

A Custom Low-Noise Silicon Photodiode Detector Designed for Use With X-Ray Capillary Optics

We present the first results of a custom low-noise silicon photodiode detector designed for use with X-ray capillary optics. This system is intended to perform as a smaller, lighter, and low-powered alternative to currently existing X-ray telescope technologies. The detector has an active area with a diameter of 100 μm, and its small size leads to a low capacitance of well under 1 pF and a leakage current of 1 pA or less at the depletion voltage. We tested the detector with both a discrete preamp and an ultralow-noise front-end application-specific integrated circuit (ASIC). The front-end ASIC, developed at Brookhaven National Laboratory, was designed for low-capacitance detectors but had not been previously tested with a detector. Here, we discuss the detector design, the experimental setup, and the resulting detector performance. Using radioactive laboratory sources, we measure a full-width at half-maximum (FWHM) of 211 ± 8 eV at 5.9 keV with the ASIC and are able to set the threshold as low as 0.6 keV.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Characterization of silicon drift detectors with electrons for the TRISTAN project

Sterile neutrinos are a minimal extension of the standard model of particle physics. A promising model-independent way to search for sterile neutrinos is via high-precision β-spectroscopy. The Karlsruhe tritium neutrino (KATRIN) experiment, equipped with a novel multi-pixel silicon drift detector focal plane array and read-out system, named the TRISTAN detector, has the potential to supersede the sensitivity of previous laboratory-based searches. In this work we present the characterization of the first silicon drift detector prototypes with electrons and we investigate the impact of uncertainties of the detector’s response to electrons on the final sterile neutrino sensitivity.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Ground Calibration of the Silicon Drift Detectors for NICER

The Neutron star Interior Composition ExploreR (NICER) is set to be deployed on the International Space Station (ISS) in early 2017. It will use an array of 56 Silicon Drift Detectors (SDDs) to detect soft X-rays (0.2 - 12 keV) with 100 nanosecond timing resolution. Here we describe the e ort to calibrate the detectors in the lab primarily using a Modulated X-ray Source (MXS). The MXS that was customized for NICER provides more than a dozen emission lines spread over the instrument bandwidth, providing calibration measurements for detector gain and spectral resolution. In addition, the fluorescence source in the MXS was pulsed at high frequency to enable measurement of the delay due to charge collection in the silicon and signal processing in the detector electronics. A second chamber, designed to illuminate detectors with either 55Fe, an optical LED, or neither, provided additional calibration of detector response, optical blocking, and effectiveness of background rejection techniques. The overall ground calibration achieved total operating time that was generally in the range of 500-1500 hours for each of the 56 detectors.

Silicon Drift Detectors↗

Low temperature process for diode termination of fully depleted high resistivity silicon radiation detectors that can be used for shallow entrance windows and thinned sensors

Fabrication of vertical diodes for radiation sensing using a low temperature microwave anneal is provided. This kind of anneal allows the back side processing to be performed after the front side processing is done without damaging the front side structures. This enables a simplified fabrication of thinned detectors compared to a conventional silicon on insulator process. Another feature that this technology enables is a thin entrance window for a detector that also serves as the doped diode termination. Such thin entrance windows are especially suitable for detection of low energy radiation.

Kenney, Christopher J.↗

Conceptual study of a two-layer silicon pixel detector to tag the passage of muons from cosmic sources through quantum processors

Abstract Recent studies in quantum computing have shown that quantum error correction with large numbers of physical qubits are limited by ionizing radiation from high-energy particles. Depending on the physical setup of the quantum processor, the contribution of muons from cosmic sources can constitute a significant fraction of these interactions. As most of these muons are difficult to stop, we perform a conceptual study of a two-layer silicon pixel detector to tag their hits on a solid-state quantum processor instead. With a typical dilution refrigerator geometry model, we find that efficiencies greater than 50% are most likely to be achieved if at least one of the layers is operated at the deep-cryogenic (<1 K) flanges of the refrigerator. Following this finding, we further propose a novel research program that could allow the development of silicon pixel detectors that are fast enough to provide input to quantum error correction algorithms, can operate at deep-cryogenic temperatures, and have very low power consumption.

Instruments & Instrumentation↗

EIC Physics from An All-Silicon Tracking Detector

The proposed electron-ion collider has a rich physics program to study the internal structure of protons and heavy nuclei. This program will impose strict requirements on detector design. This paper explores how these requirements can be satisfied using an all-silicon tracking detector, by consideration of three representative probes: heavy flavor hadrons, jets, and exclusive vector mesons.

Arrington, John↗

Why would you put a flashlight in a dark matter detector?

Silicon photomultipliers (SiPMs) are solid-state, single-photon sensitive, pixelated sensors whose usage for scintillation detection has rapidly increased over the past decade. It is known that the avalanche process within the device, which renders a single photon detectable, can also generate secondary photons which may be detected by a separate device. This effect, known as external crosstalk, could potentially degrade the science goals of future xenon dark matter experiments. In this article, we measure the effect of external crosstalk in a dual-phase, liquid xenon time projection chamber fully instrumented with SiPMs. We then consider the implications for a future xenon dark matter experiment utilizing SiPMs and discuss possible solutions.

47 OTHER INSTRUMENTATION↗