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At least 91 records · Page 5

Split-Block Waveguide Polarization Twist for 220 to 325 GHz

A split-block waveguide circuit that rotates polarization by 90 has been designed with WR-3 input and output waveguides, which are rectangular waveguides used for a nominal frequency range of 220 to 325 GHz. Heretofore, twisted rectangular waveguides equipped with flanges at the input and output have been the standard means of rotating the polarizations of guided microwave signals. However, the fabrication and assembly of such components become difficult at high frequency due to decreasing wavelength, such that twisted rectangular waveguides become impractical at frequencies above a few hundred gigahertz. Conventional twisted rectangular waveguides are also not amenable to integration into highly miniaturized subassemblies of advanced millimeter- and submillimeter-wave detector arrays now undergoing development. In contrast, the present polarization- rotating waveguide can readily be incorporated into complex integrated waveguide circuits such as miniaturized detector arrays fabricated by either conventional end milling of metal blocks or by deep reactive ion etching of silicon blocks. Moreover, the present split-block design can be scaled up in frequency to at least 5 THz. The main step in fabricating a splitblock polarization-rotating waveguide of the present design is to cut channels having special asymmetrically shaped steps into mating upper and lower blocks (see Figure 1). The dimensions of the steps are chosen to be consistent with the WR-3 waveguide cross section, which is 0.864 by 0.432 mm. The channels are characterized by varying widths with constant depths of 0.432, 0.324, and 0.216 mm and by relatively large corner radii to facilitate fabrication. The steps effect both a geometric transition and the corresponding impedance-matched electromagnetic-polarization transition between (1) a WR-3 rectangular waveguide oriented with the electric field vector normal to the block mating surfaces and (2) a corresponding WR-3 waveguide oriented with its electric field vector parallel to the mating surfaces of the blocks. A prototype has been built and tested. Figure 2 presents test results indicative of good performance over nearly the entire WR-3 waveguide frequency band.

Ward, John↗

Advantages of an indirect semiconductor quantum well system for infrared detection

The infrared intersubband absorption process in quantum well systems with anisotropic bulk effective masses, which usually occurs in indirect semiconductors was analyzed. It is found that the anisotropic effective mass can be utilized to provide allowed intersubband transitions at normal incidence to the quantum well growth direction. This transition is known to be forbidden for cases of isotropic effective mass. This property can be exploited for infrared sensor application of quantum well structures by allowing direct illumination of large surface areas without using special waveguide structures. The 10-micron intersubband absorption in quantum wells made of the silicon-based system Si/Si(1-x)Ge(x) was calculated. It is found that it is readily possible to achieve an absorption constant of the order of 10,000/cm in these Si quantum wells with current doping technology.

Yang, Chan-Lon↗

PVD Silicon Carbide as a Thin Film Packaging Technology for Antennas on LCP Substrates for Harsh Environments

This paper describes an effort to develop a thin film packaging technology for microfabricated planar antennas on polymeric substrates based on silicon carbide (SiC) films deposited by physical vapor deposition (PVD). The antennas are coplanar waveguide fed dual frequency folded slot antennas fabricated on liquid crystal polymer (LCP) substrates. The PVD SiC thin films were deposited directly onto the antennas by RF sputtering at room temperature at a chamber pressure of 30 mTorr and a power level of 300 W. The SiC film thickness is 450 nm. The return loss and radiation patterns were measured before and after the SiC-coated antennas were submerged into perchloric acid for 1 hour. No degradation in RF performance or physical integrity of the antenna was observed.

Scardelletti, Maximilian C.↗

Development of a tantalum pentoxide Luneberg lens

A process has been developed for the fabrication of a tantalum pentoxide waveguide Luneburg lens as the input collimator for an optical signal processing circuit on a silicon substrate, such as an integrated wavelength demultiplexer. The development of such a lens involved improvement of the deposition mask profile, reduction of surface scattering by underlaying the lens, reduction of edge scattering by using shims under the mask, and prediction and measurement of the TE-TM polarization aberration. It is shown that polarization aberration significantly affects the design of a demultiplexer system.

Bryan, D. A.↗

Dielectric Covered Planar Antennas at Submillimeter Wavelengths for Terahertz Imaging

Most optical systems require antennas with directive patterns. This means that the physical area of the antenna will be large in terms of the wavelength. When non-cooled systems are used, the losses of microstrip or coplanar waveguide lines impede the use of standard patch or slot antennas for a large number of elements in a phased array format. Traditionally, this problem has been solved by using silicon lenses. However, if an array of such highly directive antennas is to be used for imaging applications, the fabrication of many closely spaced lenses becomes a problem. Moreover, planar antennas are usually fed by microstrip or coplanar waveguides while the mixer or the detector elements (usually Schottky diodes) are coupled in a waveguide environment. The coupling between the antenna and the detector/ mixer can be a fabrication challenge in an imaging array at submillimeter wavelengths. Antennas excited by a waveguide (TE10) mode makes use of dielectric superlayers to increase the directivity. These antennas create a kind of Fabry- Perot cavity between the ground plane and the first layer of dielectric. In reality, the antenna operates as a leaky wave mode where a leaky wave pole propagates along the cavity while it radiates. Thanks to this pole, the directivity of a small antenna is considerably enhanced. The antenna consists of a waveguide feed, which can be coupled to a mixer or detector such as a Schottky diode via a standard probe design. The waveguide is loaded with a double-slot iris to perform an impedance match and to suppress undesired modes that can propagate on the cavity. On top of the slot there is an air cavity and on top, a small portion of a hemispherical lens. The fractional bandwidth of such antennas is around 10 percent, which is good enough for heterodyne imaging applications.The new geometry makes use of a silicon lens instead of dielectric quarter wavelength substrates. This design presents several advantages when used in the submillimeter-wave and terahertz bands: a) Antenna fabrication compatible with lithographic techniques. b) Much simpler fabrication of the lens. c) A simple quarter-wavelength matching layer of the lens will be more efficient if a smaller portion of the lens is used. d) The directivity is given by the lens diameter instead of the leaky pole (the bandwidth will not depend anymore on the directivity but just on the initial cavity). The feed is a standard waveguide, which is compatible with proven Schottky diode mixer/detector technologies. The development of such technology will benefit applications where submillimeter- wave heterodyne array designs are required. The main fields are national security, planetary exploration, and biomedicine. For national security, wideband submillimeter radars could be an effective tool for the standoff detection of hidden weapons or bombs concealed by clothing or packaging. In the field of planetary exploration, wideband submillimeter radars can be used as a spectrometer to detect trace concentrations of chemicals in atmospheres that are too cold to rely on thermal imaging techniques. In biomedicine, an imaging heterodyne system could be helpful in detecting skin diseases.

Chattopadhyay, Goutam↗

Interconnect and Packaging Technologies for Terahertz Communication Systems

Using newly developed silicon micromachining technology that enables low-loss and highly integrated packaging solutions, we are developing vertically stacked transmitters and receivers at terahertz frequencies that can be used for communication and other terahertz systems. Although there are multiple ways to address the problem of interconnect and packaging solutions at these frequencies, such as system-on-package (SOP), multi-chip modules (MCM), substrate integrated waveguide (SIW), liquid crystal polymer (LCP) based multilayer technologies, and others, we show that deep reactive ion etching (DRIE) based silicon micromachining with vertical integration allows the most effective solutions at terahertz frequencies.

Micromachining↗

NASA Tech Briefs, September 2011

Topics covered include: Fused Reality for Enhanced Flight Test Capabilities; Thermography to Inspect Insulation of Large Cryogenic Tanks; Crush Test Abuse Stand; Test Generator for MATLAB Simulations; Dynamic Monitoring of Cleanroom Fallout Using an Air Particle Counter; Enhancement to Non-Contacting Stress Measurement of Blade Vibration Frequency; Positively Verifying Mating of Previously Unverifiable Flight Connectors; Radiation-Tolerant Intelligent Memory Stack - RTIMS; Ultra-Low-Dropout Linear Regulator; Excitation of a Parallel Plate Waveguide by an Array of Rectangular Waveguides; FPGA for Power Control of MSL Avionics; UAVSAR Active Electronically Scanned Array; Lockout/Tagout (LOTO) Simulator; Silicon Carbide Mounts for Fabry-Perot Interferometers; Measuring the In-Process Figure, Final Prescription, and System Alignment of Large; Optics and Segmented Mirrors Using Lidar Metrology; Fiber-Reinforced Reactive Nano-Epoxy Composites; Polymerization Initiated at the Sidewalls of Carbon Nanotubes; Metal-Matrix/Hollow-Ceramic-Sphere Composites; Piezoelectrically Enhanced Photocathodes; Iridium-Doped Ruthenium Oxide Catalyst for Oxygen Evolution; Improved Mo-Re VPS Alloys for High-Temperature Uses; Data Service Provider Cost Estimation Tool; Hybrid Power Management-Based Vehicle Architecture; Force Limit System; Levitated Duct Fan (LDF) Aircraft Auxiliary Generator; Compact, Two-Sided Structural Cold Plate Configuration; AN Fitting Reconditioning Tool; Active Response Gravity Offload System; Method and Apparatus for Forming Nanodroplets; Rapid Detection of the Varicella Zoster Virus in Saliva; Improved Devices for Collecting Sweat for Chemical Analysis; Phase-Controlled Magnetic Mirror for Wavefront Correction; and Frame-Transfer Gating Raman Spectroscopy for Time-Resolved Multiscalar Combustion Diagnostics.

Source record↗

Nanoklystron: A Monolithic Tube Approach to THz Power Generation

The authors propose a new approach to THz power generation: the nanoklystron. Utilizing silicon micromachining techniques, the design and fabrication concept of a monolithic THz vacuum-tube reflex-klystron source is described. The nanoklystron employs a separately fabricated cathode structure composed of densely packed carbon nanotube field emitters and an add-in repeller. The nanotube cathode is expected to increase the current density, extend the cathode life and decrease the required oscillation voltage to values below 100 V. The excitation cavity is based on ridged-waveguide and differs from the conventional cylindrical re-entrant structures found in lower frequency klystrons. A quasi-static field analysis of the cavity and output coupling structure show excellent control of the quality factor and desired field distribution. Output power is expected to occur through an iris coupled matched rectangular waveguide and integrated pyramidal feed horn. The entire circuit is designed so as to be formed monolithically from two thermocompression bonded silicon wafers processed using deep reactive ion etching (DRIE) techniques. To expedite prototyping, a 600 GHz mechanically machined structure has been designed and is in fabrication. A complete numeric analysis of the nanoklystron circuit, including the electron beam dynamics has just gotten underway. Separate evaluation of the nanotube cathodes is also ongoing. The authors will describe the progress to date as well as plans for the immediate implementation and testing of nanoklystron prototypes at 640 and 1250 GHz.

Siegel, Peter H.↗

Ion Traps and Packaging for Heterogenous Integration - Chimera

Microfabricated surface ion traps and silicon-based photonics are critical technologies for scaling quantum systems. Current ion trap architectures face scalability and integration challenges due to limitations in optical access, fabrication techniques, and material compatibility. State-of-the-art quantum computers and atomic clocks are investigating monolithic integration, which necessitates custom traps for each ion species and has not overcome the integration hurdles presented by merging these technologies. The Chimera (Ion Traps and Packaging for Heterogeneous Integration) project proposes a novel approach utilizing heterogeneous integration (HI) of ion traps and photonic circuits. This separation of components allows for flexibility in ion trap design and reduces fabrication compromises. The Chimera project specifically designed an ion trap to interface vertically with a separately fabricated waveguide chip and demonstrates the first steps to integrating them at the packaging level. The ion trap features a large area of removed silicon, allowing the photonics chip outputs closer to the ion trap, improving alignment and packaging processes. The alignment must be accurate to < 1 µm to ensure that the light from the waveguide can overlap with the trapping region. This fine alignment must also be maintained through an ultra-high vacuum bake, a critical step in preparing an ion trap experiment. By combining separate chips, we demonstrate a new path for scaling trapped ion technology that is less reliant on monolithic integration. We successfully fabricated a trap with a large area of oxide removed, resulting in a region thinned to about 40 µm, a key milestone toward successful integration.

42 ENGINEERING↗

Multiplexed color centers in a silicon photonic cavity array

Entanglement distribution is central to the modular scaling of quantum processors and establishing quantum networks. Color centers with telecom-band transitions and long spin coherence times are suitable candidates for long-distance entanglement distribution. However, high-bandwidth memory-enhanced quantum communication is limited by high-yield, scalable creation of efficient spin-photon interfaces. Here, we develop a silicon photonics platform consisting of arrays of bus-coupled cavities. The coupling to a common bus waveguide enables simultaneous access to individually addressable cavity-enhanced T center arrays. We demonstrate frequency-multiplexed operation of two T centers in separate photonic crystal cavities. In addition, we investigate the cavity enhancement of a T center through hybridized modes formed between physically distant cavities. Our results show that bus-coupled arrays of cavity-enhanced color centers could enable efficient on-chip and long-distance entanglement distribution.

Komza, Lukasz↗

Project: Micromachined High-Frequency Circuits For Sub-mm-wave Sensors

A novel micromachined resonator at 45 GHz based on a defect in a periodic electromagnetic bandgap structure (EBG) and a two-pole Tchebysbev filter with 1.4% 0.15 dB equiripple bandwidth and 2.3 dB loss employing this resonator are presented in this letter. The periodic bandgap structure is realized on a 400 micron thick high-resistivity silicon wafer using deep reactive ion etching techniques. The resonator and filter can be accessed via coplanar waveguide feeds.

Papapolymerou, Ioannis John↗

Miniaturized Wilkinson Power Dividers Utilizing Capacitive Loading

This letter reports the miniaturization of a planar Wilkinson power divider by capacitive loading of the quarter wave transmission lines employed in conventional Wilkinson power dividers. Reduction of the transmission line segments from lambda/4 to between lambda/5 and lambda/12 are reported here. The input and output lines at the three ports and the lines comprising the divider itself are coplanar waveguide (CPW) and asymmetric coplanar stripline (ACPS), respectively. The 10 GHZ power dividers are fabricated on high resistivity silicon (HRS) and alumina wafers. These miniaturized dividers are 74% smaller than conventional Wilkinson power dividers, and have a return loss better than +30 dB and an insertion loss less than 0.55 dB. Design equations and a discussion about the effect of parasitic reactance on the isolation are presented for the first time.

Scardelletti, Maximilian C.↗

Mechanical Design and Development of TES Bolometer Detector Arrays for the Advanced ACTPol Experiment

The next generation Advanced ACTPol (AdvACT) experiment is currently underway and will consist of four Transition Edge Sensor (TES) bolometer arrays, with three operating together, totaling 5800 detectors on the sky. Building on experience gained with the ACTPol detector arrays, AdvACT will utilize various new technologies, including 150 mm detector wafers equipped with multichroic pixels, allowing for a more densely packed focal plane. Each set of detectors includes a feedhorn array of stacked silicon wafers which form a spline pro le leading to each pixel. This is then followed by a waveguide interface plate, detector wafer, back short cavity plate, and backshort cap. Each array is housed in a custom designed structure manufactured from high purity copper and then gold plated. In addition to the detector array assembly, the array package also encloses cryogenic readout electronics. We present the full mechanical design of the AdvACT high frequency (HF) detector array package along with a detailed look at the detector array stack assemblies. This experiment will also make use of extensive hardware and software previously developed for ACT, which will be modi ed to incorporate the new AdvACT instruments. Therefore, we discuss the integration of all AdvACT arrays with pre-existing ACTPol infrastructure.

Advanced ACTPol (AdvACT)↗

Phase 2: Array automated assembly task low cost silicon solar array project

Several microwave systems for use in solar cell fabrication were developed and experimentally tested. The first system used a standing wave rectangular waveguide horn applicator. Satisfactory results were achieved with this system for impedance matching and wafer surface heating uniformity. The second system utilized a resonant TM sub 011 mode cylindrical cavity but could not be employed due to its poor energy coupling efficiency. The third and fourth microwave systems utilized a circular waveguide operating in the TM sub 01 and TM sub 11 but had problems with impedance matching, efficiency, and field uniformity.

Jones, G. T.↗

Superconducting Vacuum-Gap Crossovers for High Performance Microwave Applications

The design and fabrication of low-loss wide-bandwidth superconducting vacuum-gap crossovers for high performance millimeter wave applications are described. In order to reduce ohmic and parasitic losses at millimeter wavelengths a vacuum gap is preferred relative to dielectric spacer. Here, vacuum-gap crossovers were realized by using a sacrificial polymer layer followed by niobium sputter deposition optimized for coating coverage over an underlying niobium signal layer. Both coplanar waveguide and microstrip crossover topologies have been explored in detail. The resulting fabrication process is compatible with a bulk micro-machining process for realizing waveguide coupled detectors, which includes sacrificial wax bonding, and wafer backside deep reactive ion etching for creation of leg isolated silicon membrane structures. Release of the vacuum gap structures along with the wax bonded wafer after DRIE is implemented in the same process step used to complete the detector fabrication. 

superconductor↗

Hot-Electron Bolometer Mixers on Silicon-on-Insulator Substrates for Terahertz Frequencies

A terahertz Hot-Electron Bolometer (HEB) mixer design using device substrates based on Silicon-On-Insulator (SOI) technology is described. This substrate technology allows very thin chips (6 pm) with almost arbitrary shape to be manufactured, so that they can be tightly fitted into a waveguide structure and operated at very high frequencies with only low risk for power leakages and resonance modes. The NbTiN-based bolometers are contacted by gold beam-leads, while other beamleads are used to hold the chip in place in the waveguide test fixture. The initial tests yielded an equivalent receiver noise temperature of 3460 K double-sideband at a local oscillator frequency of 1.462 THz and an intermediate frequency of 1.4 GHz.

bolometer↗

Three-Stage InP Submillimeter-Wave MMIC Amplifier

A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers.

Pukala, David↗