Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Silicon Detector”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Pixel-Strip Module Testing and Performance Analysis for the CMS Phase-2 Outer Tracker Upgrade

In response to the demanding environment of the High-Luminosity Large Hadron Collider (HL-LHC), the Compact Muon Solenoid (CMS) Experiment's Outer Tracker is being replaced with a lighter, higher-granularity, radiation-tolerant silicon detector capable of providing tracking information directly to the Level-1 trigger system. The new Outer Tracker consists of Pixel-Strip (PS) and Strip-Strip (2S) transverse momentum (pT) modules, which are assembled and tested at, among other centers, Fermilab's Silicon Detector Facility. PS modules consist of a pixel sensor, a strip sensor, and multiple application-specific integrated circuits (ASICs). This poster studies the performance of MaPSAs, silicon macro-pixel sensors bump-bonded to 16 macro-pixel ASICS. It presents the testing procedures for MaPSAs and MaPSA-strip sensor sub-assemblies, as well as the results of calibration and performance studies of two PS modules before and after irradiation. These results assess the impact of irradiation on module performance, providing insight into the modules' expected performance in the HL-LHC environment.

Kimrey, Emerson [Scripps College]↗
DOE OSTI2025

SENSEI at SNOLAB: Single-Electron Event Rate and Implications for Dark Matter

We present results from data acquired by the SENSEI experiment at SNOLAB after a major upgrade in May 2023, which includes deploying 16 new sensors and replacing the copper trays that house the CCDs with a new light-tight design. We observe a single-electron event rate of (1.39±0.11)×10^{-5} e^{-}/pix/day, corresponding to (39.8±3.1) e^{-}/gram/day. This is an order-of-magnitude improvement compared to the previous lowest single-electron rate in a silicon detector and the lowest for any photon detector in the wavelength range between near-infrared and ultraviolet. We use these data to obtain a 90% confidence level upper bound of 1.53×10^{-5} e^{-}/pix/day and to set constraints on sub-GeV dark matter candidates that produce single-electron events. We hypothesize that the data taken at SNOLAB in the previous run, with an older tray design for the sensors, contained a larger rate of single-electron events due to light leaks. We test this hypothesis using data from the SENSEI detector located in the MINOS cavern at Fermilab.

dark matter↗
DOE OSTI2024

Readout optimization of multi-amplifier sensing charge-coupled devices for single-quantum measurement

The non-destructive readout capability of the Skipper Charge Coupled Device (CCD) has been demonstrated to reduce the noise limitation of conventional silicon devices to levels that allow single-photon or single-electron counting. The noise reduction is achieved by taking multiple measurements of the charge in each pixel. These multiple measurements come at the cost of extra readout time, which has been a limitation for the broader adoption of this technology in particle physics, quantum imaging, and astronomy applications. This work presents recent results of a novel sensor architecture that uses multiple non-destructive floating-gate amplifiers in series to achieve sub-electron readout noise in a thick, fully-depleted silicon detector to overcome the readout time overhead of the Skipper-CCD. This sensor is called the Multiple-Amplifier Sensing Charge-Coupled Device (MAS-CCD) can perform multiple independent charge measurements with each amplifier, and the measurements from multiple amplifiers can be combined to further reduce the readout noise. We will show results obtained for sensors with 8 and 16 amplifiers per readout stage in new readout operations modes to optimize its readout speed. The noise reduction capability of the new techniques will be demonstrated in terms of its ability to reduce the noise by combining the information from the different amplifiers, and to resolve signals in the order of a single photon per pixel. The first readout operation explored here avoids the extra readout time needed in the MAS-CCD to read a line of the sensor associated with the extra extent of the serial register. The second technique explore the capability of the MAS-CCD device to perform a region of interest readout increasing the number of multiple samples per amplifier in a targeted region of the active area of the device.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Development of a test system for data links of the ATLAS Inner Tracker (ITk) upgrade silicon pixel detector

This contribution introduces a novel test system developed to evaluate the signal transmission quality in high-speed data links for the 2026 Inner Tracker (ITk) upgrade of the ATLAS experiment. Using an FPGA-based data acquisition (DAQ) framework, the setup can run simultaneous Bit Error Rate (BER) tests for up to 64 channels and generate virtual eye diagrams, for qualifying the ∼26k electrical links at the ATLAS ITk data rate of 1.28 Gb/s. The paper includes results from system calibration, yielding its contribution to the measured losses, and preliminary results from tests of prototype and pre-production assemblies of on-detector links of the three ATLAS ITk Pixel subsystems.

47 OTHER INSTRUMENTATION↗
NASA NTRS1968

Silicon surface barrier detectors used for liquid hydrogen density measurement

Multichannel system employing a radioisotope radiation source, strontium-90, radiation detector, and a silicon surface barrier detector, measures the local density of liquid hydrogen at various levels in a storage tank. The instrument contains electronic equipment for collecting the density information, and a data handling system for processing this information.

James, D. T.↗
NASA NTRS1982

Stress induced long wavelength photoconductivity in doped silicon infrared detectors

The long wavelength cutoff of a Si:P detector was extended to 34 microns by the application of a uniaxial stress. An unstressed Si:P photoconductive detector responds to photons of up to 28 microns wavelength. By applying a uniaxial stress to a detector along the /100/ crystal axis, the response was extended to approximately 34 microns. The /100/ axis was chosen as the stress direction because theoretical calculations predicted that such a stress extends the wavelength response more than one along the /110/ axis. These theoretical calculations were based upon fits to experimental data obtained at stresses of up to approximately kbar, and indicated that the extension in wavelength response continues to increase at much larger stresses.

Houck, J. R.↗
NASA NTRS1988

Tests of a multichannel photometer based on silicon diode detectors

A breadboard photometer was constructed that demonstrates a precision of 2 times 10 to the 4th power in the laboratory and scintillation-limited performance when used with an 0.5 m aperture telescope. Because the detectors and preamps are not cooled, only stars with m sub v approx. less than 4 are bright enough to allow the photometer to attain a precision of 1 times 10 to the 3rd power for three minute observations with an 0.5 m aperature telescope. Cooling the telescope should allow much fainter stars to be observed. Increasing the aperture of the telescope will allow higher precision and the observation of fainter stars.

Borucki, William J.↗
NASA NTRS2003

Monte Carlo Simulations of the Response of the MARIE Instrument

The MARIE instrument aboard Mars Odyssey functions as a telescope for the detection of charged, energetic, nuclei. The directionality that leads to the telescope description is achieved by requiring coincident signals in two designated detectors in MARIE s silicon detector stack for the instrument to trigger. Because of this, MARIE is actually a bi directional telescope. Triggering particles can enter the detector stack by passing through the lightly shielded front of the instrument, but can also enter the back of the instrument by passing through the bulk of Odyssey. Because of this, understanding how to relate the signals recorded by MARIE to astrophysically important quantities such as particle fluxes or spectra exterior to the spacecraft clearly requires detailed modeling of the physical interactions that occur as the particles pass through the spacecraft and the instrument itself. In order to facilitate in the calibration of the MARIE data, we have begun a program to simulate the response of MARIE using the FLUKA [1] [2] Monte Carlo radiation transport code.

Andersen, V.↗
NASA NTRS2011

A Radiation-Hard Silicon Drift Detector Array for Extraterrestrial Element Mapping

Measurement of x-rays from the surface of objects can tell us about the chemical composition Absorption of radiation causes characteristic fluorescence from material being irradiated. By measuring the spectrum of the radiation and identifying lines in the spectrum, the emitting element (s) can be identified. This technique works for any object that has no absorbing atmosphere and significant surface irradiation : Our Moon, the icy moons of Jupiter, the moons of Mars, the planet Mercury, Asteroids and Comets

Gaskin, Jessica↗
NASA NTRS2018

Sensor Integrated Metal Dielectric Filters for Solar-Blind Silicon Ultraviolet Detectors

A filter for electromagnetic radiation including one or more dielectric spacer regions and one or more reflective regions integrated on a semiconductor substrate, the semiconductor substrate including a semiconductor photodetector, such that the filter transmits ultraviolet radiation to the semiconductor photodetector, the ultraviolet radiation having a range of wavelengths, and the filter suppresses transmission of electromagnetic radiation, having wavelengths outside the range of wavelengths, to the semiconductor photodetector.

Hoenk, Michael E.↗
DOE OSTI2025

Impact of proton irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)

Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and complementary PiN diodes were irradiated with 2.5 GeV protons at fluences up to 3.33 × 10 14 p/cm 2 . The electrostatic performance of both irradiated and non-irradiated devices was evaluated using I-V and C-V measurements. Moreover, charge collection measurements using α particles were also conducted. SiC LGADs displayed a loss in rectification, high ON-state resistances >10 10 Ω-cm 2 , and the complete removal of gain when exposed to the highest proton fluence. Additionally, the reductions in capacitance and OFF-state current pointed to compensation of the gain layer as a gain reducing mechanism. The introduction of radiation-induced defects also hinders carrier acceleration, which reduces impact ionization and further gain reduction. LGADs exposed to a fluence of 1 × 10 14 p/cm 2 experienced a partial recovery in gain (originally having a value of ∼ 2) with a value of ∼ 1.65 when applying a bias of 500 V. Charge trapping was also seen in the reduction of charge collection efficiency (CCE) to ∼ 65% for the PiN diode. However, despite the reduction in device performance, the demonstration of a measurable signal after irradiation points to the potential of SiC LGAD detectors for future high energy physics applications.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

A novel, steerable, low-energy proton source for detector characterization

We report on the conversion of the Manitoba II mass spectrometer into a versatile low-energy proton beam facility. This infrastructure is adaptable to any detector-under-test (DUT), and has proven itself effective with the characterization of silicon detectors used in subatomic beyond-the-Standard-Model (BSM) searches, namely the Nab experiment. A pencil beam of mono-energetic protons can be produced in a range from 25 keV to 35 keV, achieving a beam current of ~1 x 10 -18 A. Electrostatic steering plates were constructed to direct the Gaussian-profile proton beam over a 117 mm diameter area-of-interest with full-width at half-maxima (FWHM) ranging from 0.6 mm to 1.26 mm. This work discusses the modifications and subsequent tests to confirm the beam specifications met the demands of the aforementioned detectors.

Fundamental neutron physics↗
DOE OSTI2025

Measured gain suppression in FBK LGADs with different active thicknesses

In recent years, the gain suppression mechanism has been studied for large localized charge deposits in Low-Gain Avalanche Detectors (LGADs). LGADs are a thin silicon detector with a highly doped gain layer that provides moderate internal signal amplification. Using the CENPA Tandem accelerator at the University of Washington, the response of LGADs with different thicknesses to MeV-range energy deposits from a proton beam were studied. Three LGAD prototypes of 50 μm, 100 μm, and 150 μm were characterized. The devices' gain was determined as a function of bias voltage, incidence beam angle, and proton energy. This study was conducted in the scope of the PIONEER experiment, an experiment proposed at the Paul Scherrer Institute to perform high-precision measurements of rare pion decays. LGADs are considered for the active target (ATAR), and energy linearity is an important property for particle ID capabilities.

Particle tracking detectors↗
NASA NTRS1972

Infrared response measurements on radiation-damaged Si/Li/ detectors.

The improved infrared response (IRR) technique has been used to qualitatively compare radiation effects on Si(Li) detectors with energy levels reported for silicon in the literature. Measurements have been made on five commercial silicon detectors and one fabricated in-house, both before and after irradiation with fast neutrons, 1.9-MeV protons, and 1.6-MeV electrons. Effects dependent upon the extent of radiation damage have been observed. It seems likely that the photo-EMF, or photo-voltage, effect is the basic mechanism for the observation of IRR in p-i-n diodes with a wide i-region. Experimental characteristics of the IRR measurement are in agreement with those of the photovoltage effect.

Sher, A. H.↗