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All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Growth of Large‐Sized 2D Ultrathin SnSe Crystals with In‐Plane Ferroelectricity

Abstract Tin (II) selenide (SnSe) is an emerging 2D material with many intriguing properties, such as record‐high thermoelectric figure of merit (ZT), purely in‐plane ferroelectricity, and excellent nonlinear optical properties. To explore these functional properties and related applications, a crucial step is to develop controllable routes to synthesize large‐area, ultrathin, and high‐quality SnSe crystals. Physical vapor deposition (PVD) constitutes a reliable method to synthesize 2D SnSe, however, effects of various growth parameters have not yet been systematically investigated, and current PVD‐synthesized flakes are often thick (>10 nm) with small lateral sizes (<10 µm). In this work, high‐quality 2D SnSe crystals are synthesized via low‐pressure PVD, which display in‐plane ferroelectric domains observed by piezoresponse force microscopy and polarization‐dependent reflection spectroscopy. Detailed studies regarding the roles of various parameters are further carried out, including substrate pre‐annealing, growth duration, temperature, and pressure, which enable to rationally optimize the growth and obtain 2D SnSe crystals with lateral sizes up to ≈23.0 µm and thicknesses down to ≈2.0 nm (3–4 layers). This work paves the way for the controlled growth of large‐area 2D SnSe, facilitating the future exploration of many interesting multiferroic properties and applications with atomic thickness.

2D materials↗
DOE OSTI2021

Near surface defects: Cause of deficit between internal and external open-circuit voltage in solar cells

The presence of interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (V OC,in ), measured by photoluminescence, and the external open-circuit voltage (V OC,ex ) i.e. an additional V OC deficit. Higher V OC,ex value aim require a comprehensive understanding of connection between V OC deficit and interface recombination. Here, a deep near-surface defect model at the absorber/buffer interface is developed for copper indium di-selenide solar cells grown under Cu excess conditions to explain the disparity between V OC ,in and V OC,ex . The model is based on experimental analysis of admittance spectroscopy and deep-level transient spectroscopy, which show the signature of deep acceptor defect. Further, temperature-dependent current-voltage measurements confirm the presence of near surface defects as the cause of interface recombination. The numerical simulations show strong decrease in the local V OC ,in near the absorber/buffer interface leading to a V OC deficit in the device. This loss mechanism leads to interface recombination without a reduced interface bandgap or Fermi level pinning. Further, these findings demonstrate that the V OC ,in measurements alone can be inconclusive and might conceal the information on interface recombination pathways, establishing the need for complementary techniques like temperature dependent current voltage measurements to identify the cause of interface recombination in the devices.

14 SOLAR ENERGY↗
DOE OSTI2021

Binary and Ternary Colloidal Cu–Sn–Te Nanocrystals for Thermoelectric Thin Films

Recent advances in copper chalcogenide-based nanocrystals (NCs), copper sulfide, and copper selenide derived nanostructures, have drawn considerable attention. However, reports of crystal phase and shape engineering of binary or ternary copper telluride NCs remain rare. Here, a colloidal hot-injection approach for producing binary copper/tin telluride, and ternary copper tin telluride NCs with controllable compositions, crystal structures, and morphologies is reported. Here, the crystal phase and growth behavior of these tellurides are systematically studied from both experimental and theoretical perspectives.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2026

Forming Gas Annealing Improves the Performance of Ex Situ Sb-Doped CdSeTe Thin-Film Solar Cells

Group V doping in cadmium-selenide-telluride (CdSeTe) polycrystalline thin-film solar cells has demonstrated improved power conversion efficiencies (PCEs) and long-term stabilities as compared to the traditional Cu doping in the last decade. The dopants can be successfully incorporated by either in situ or ex situ doping. Here, we report that forming gas (FG) annealing enhances the efficiencies of CdSeTe polycrystalline thin-film solar cells utilizing ex situ antimony (Sb) doping via close-space sublimation of SbCl3 at ambient pressure. The FG annealing increases the hole density and carrier lifetime, reduces the back barrier height, and, therefore, leads to improved open-circuit voltages (VOCs) and fill factors (FFs). The champion device achieves a PCE of 19.2% with a VOC of 877 mV, a current density (JSC) of 30.2 mA/cm2, and an FF of 72.4%. Importantly, the Sb-doped devices showed improved stability under stress tests as compared to Cu-doped devices.

14 SOLAR ENERGY↗
DOE OSTI2022

Growth of Crystallographically Aligned PbSe Films of Controlled Thickness on Amorphous Substrates

Lead selenide (PbSe) has extensively been investigated due to its thermoelectric and photoconductive properties. More recently, predictions of emergent properties have focused synthetic efforts on preparing ultra-smooth layers of crystallographically aligned PbSe layers with a thickness equal to an integer number of monolayers. While rough films are typically formed through Volmer-Weber growth on heated substrates, we report the data presented herein indicates that a crystallographically aligned, ultrathin layer with a defined number of PbSe layers forms on mostly amorphous Mo-Se and V-Se coated Si substrates during nominally room temperature deposition. Since the films are uniform in thickness, the number of PbSe bilayers formed depends on the amount of Pb (or Se) deposited. If the amount of Pb deposited is close to that required for an integral number of unit cells and there is sufficient Se, Laue oscillations are present in the as-deposited samples. The Laue oscillations reflect the quality and uniformity of the crystalline PbSe domains. This study demonstrates that the substrate does not need to be crystalline to form uniform, crystallographically aligned, integer monolayer thick PbSe films. These results suggest that tuning the strength of interactions be-tween substrate and growing film is necessary to form smooth, crystallographically aligned layers. The substrate does not need to be crystalline for these interactions to be strong enough to enable growth of crystallographically aligned films.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Structural and Electronic Properties of Indium-Doped n-type Cd-Se-Te Crystals

Here, we present a comprehensive investigation into the potential of n-type indium-doped cadmium selenide telluride (CST:In) as a high-performance candidate for solar cell applications, without the need for resource-intensive post-growth treatments that are required for CdTe:In. We compared undoped CST and CST:In crystals under different growth conditions, analyzing their structural and electronic properties using x-ray diffraction (XRD), electron probe microanalysis (EPMA), current-voltage (IV) and Hall effect measurements, time-resolved photoluminescence (TRPL), optical transmission, and photoluminescence (PL) mapping. The results reveal that as-grown CST:In crystals achieve nearly 100% carrier activation, yielding an electron concentration of 9.5x1018 cm -3 , mobility of 653 cm 2 /V.s and a 5 ns lifetime which approaches the radiative limit. Furthermore, comparison of PL maps from crystal growths having different cooling profiles suggests a strong effect of cooling rate on selenium segregation and cubic/hexagonal/polytype phase distribution. Slower cooling leads to a more homogeneous cubic structure with lower Se segregation, while a faster cooling rate results in increased Se segregation, and twin boundaries and stacking faults with polytypic and hexagonal character.

14 SOLAR ENERGY↗
DOE OSTI2024

Nanoengineering of 2D MBenes for energy storage applications: A review

2D transition metal borides (MBenes), a flourishing member of the 2D nanomaterial family, show great potential in a number of study areas. MBenes have received increasing attention thanks to their excellent electrical conductivity, structural and mechanical properties, and chemical stability, which have captivated researchers and sparked further exploration. Extensive theoretical and experimental investigations have unveiled its remarkable potential as electrode materials for electrochemical storage applications, making MBenes a subject of great interest. Despite the growing interest and numerous studies conducted, there is a lack of a comprehensive and systematic appraisal of MBenes' applications in electrochemical energy storage systems. Here, in light of this, firstly, we provide an overview of the current progress in the fabrication and characterization of MAB phases and MBenes. For the synthesis of MBenes, the following fabrication techniques were discussed; liquid-phase exfoliation, solid-state mechanical exfoliation, chemical vapor deposition, high-pressure chemical vapor deposition, microwave-assisted chemical etching, and ultrasound-assisted chemical etching methods. Then, we delve into the captivating potential of MBenes, specifically in the realm of energy storage applications and their role in enhancing electrochemical storage capabilities. The discussion encompasses their application in lithium-ion, lithium-sulfur, and lithium-selenide batteries, supercapacitors and other energy storage systems, providing a comprehensive perspective on their contributions to the energy landscape. Finally, a brief but significant summary of the challenges and opportunities of MBenes in practical applications was summarized. The present review provides a guide and scientific motivation for creating and developing advanced MBene-based nanomaterials, addressing the growing demand for cutting-edge energy storage systems.

25 ENERGY STORAGE↗
DOE OSTI2020

Magnetic properties of ferrimagnetic Mn 3 Si 2 Se 6

The physical properties of Mn 3 Si 2 Se 6 have been investigated using single crystals grown by iodine-assisted vapor transport. Additionally, the material possesses a ferrimagnetic ground state and the properties are similar to those in the isostructural compound Mn 3 Si 2 Se 6 . Furthermore, in these trigonal materials, the dominant magnetic exchanges are antiferromagnetic and intrinsically frustrated, leading to a variety of competing ground states. In Mn 3 Si 2 Se 6 , the Curie temperature is TC = 67(1)K, which is slightly lower than that of Mn 3 Si 2 Se 6 where TC = 78K. The anisotropy field is also smaller in the selenide relative to the telluride. In both materials, short-range correlations likely exist well-above TC. Neutron single crystal diffraction data on Mn 3 Si 2 Se 6 suggest a collinear ferrimagnetic structure with the moments tilting out of the ab-plane in zero-field. Finally, the magnetization of vapor grown Mn 3 Si 2 Se 6 is shown for comparison; these vapor grown crystals do not show a sharp onset of magnetic anisotropy above 300K as was previously observed for melt grown Mn 3 Si 2 Se 6 crystals.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A review of Sb 2 Se 3 photovoltaic absorber materials and thin-film solar cells

Energy generated from environmentally friendly, cost-effective solar cells is a key aspect for developing a clean renewable-energy economy. Non-toxic and Earth-abundant materials with high absorption coefficient (>10 5 cm -1 ) and optimal bandgap (1-1.5 eV) have received great attention as photovoltaic (PV) absorber layers during the last few decades. Among them, antimony selenide (Sb 2 Se 3 ) has been a promising PV absorber, with steadily increasing power-conversion efficiency (PCE) compared to other emerging compounds. Very recent studies showed that high-quality ZnO:Al/ZnO/CdS/TiO 2 /Sb 2 Se 3 /MoSe 2 /Mo devices with PCE of 9.2% can be fabricated using cost-effective novel compounds. Considering these recent advances, this article provides an overview of the material properties of Sb2Se3 thin films and the recent progress made with Sb 2 Se 3 -based solar cells. Furthermore, analysis of Sb 2 Se 3 -based thin-film solar cells has also shown that the devices have relatively good light management due to their suitable bandgap and high absorption coefficient, whereas carrier management, i.e. collection efficiency of photo-generated carriers, needs significant improvement. Overall, this study provides background knowledge on material properties and device performance and suggests main research directions to overcome the limiting factors of solar cell performance.

14 SOLAR ENERGY↗
DOE OSTI2021

Robust passivation of CdSeTe based solar cells using reactively sputtered magnesium zinc oxide

Magnesium zinc oxide (MZO, Mg x Zn 1-x O) is a leading emitter for CdTe-based solar cells due to its transparency and the ability to tune its conduction band offset with the absorber. Devices employing alloyed cadmium selenide telluride (CST, CdSe y Te 1-y ) absorbers achieved high efficiency (>19%) using MZO deposited by reactive sputtering over a broad composition range (3.68–3.92 eV, x: 0.20–0.35). Minimal differences in implied and measured open circuit voltage indicate that the contacts are well passivated and highly selective across the spectrum of MZO employed. Device performance insensitivity to MZO composition, which is not observed in CdTe devices, is attributed to the formation of an oxygenated interface layer. Se volatility creates a group VI deficiency at the interface that drives O migration from the MZO into the absorber. This introduces conductivity in the emitter not present in its as-deposited state, contributing to the exceptional performance observed. It is shown that the quality of device passivation depends on the oxidation state of the as-deposited MZO such that intelligent control and management of the reactive sputtering process is required.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electro-Optical Characterization of Arsenic-Doped CdSeTe and CdTe Solar Cell Absorbers Doped in-situ During Close Space Sublimation

Most contemporary device models predict that an acceptor concentration of at least 10^16 cm^-3 is required to reach an open circuit voltage of 1 V in polycrystalline CdTe-based solar cells. While copper has traditionally been used as the de facto p-type dopant in polycrystalline cadmium telluride (CdTe) and cadmium selenide telluride (CdSeTe), reaching high acceptor concentrations has proved to be challenging in such devices due to significant dopant compensation. The acceptor concentration in copper-doped CdTe and CdSeTe typically ranges from 10^13 to 10^15 cm^-3 and routinely exhibit low external radiative efficiencies below 0.01%, limiting their implied voltage (i.e., quasi-Fermi level splitting) to approximately 900 mV. As an alternative to copper, this work explores the use of arsenic as a p-type dopant for CdTe and CdSeTe. Using a novel technique in which a thin layer of arsenic-containing material is deposited and used as a reservoir for arsenic to diffuse into a front layer of previously undoped material, this contribution demonstrates that high external radiative efficiencies are achievable, a direct result of combined high acceptor concentrations and long minority-carrier lifetimes in the absorber. This leads to improved implied voltages, and indicates that As-doping represents a promising pathway towards improving the external voltage of CdSeTe/CdTe solar cells.

cadmium telluride↗
DOE OSTI2020

Controlling Covalency and Anion Redox Potentials through Anion Substitution in Li-Rich Chalcogenides

Development of next-generation battery technologies is imperative in the pursuit of a clean energy future. Toward that end, battery chemistries capable of multielectron redox processes are at the forefront of studies on Li-based systems to increase the gravimetric capacity of the cathode. Multielectron processes rely either on the iterative redox of transition metal cations or redox involving both the transition metal cations and the anionic framework. Targeting coupled cation and anion redox to achieve multielectron charge storage is difficult, however, because the structure–property relationships that govern reversibility are poorly understood. In an effort to develop fundamental understanding of anion redox, we have developed a materials family that displays tunable anion redox over a range of potentials that are dependent on a systematic modification of the stoichiometry. We report anion redox in the chalcogenide solid solution Li 2 FeS 2–y Se y , wherein the mixing of the sulfide and selenide anions yields a controllable shift in the high voltage oxidation plateau. Electrochemical measurements indicate that reversible multielectron redox occurs across the solid solution. X-ray absorption spectroscopy supports the oxidation of both iron and selenium at high states of charge, while Raman spectroscopy indicates the formation of Se–Se dimers in Li 2 FeSe 2 upon Li deintercalation, providing insight into the charge mechanism of the Li-rich iron chalcogenides. Anion substitution presents direct control over the functional properties of multielectron redox materials for next generation battery technologies.

25 ENERGY STORAGE↗
DOE OSTI2025

Spin–Flop and Metamagnetic Transition in Monoclinic Eu 4 Bi 6 Se 13

This study explores an investigation of the crystallographic, electronic, and magnetic properties of the europium-based bismuth selenide compound Eu 4 Bi 6 Se 13 , with particular focus on its magnetic anisotropy. This compound adopts a monoclinic crystal structure classified under the P2 1 /m space group (#11). It exhibits distinctive structural features, including substantial Eu–Se coordination numbers (6 and 8), Bi–Se ladders, and linear chains of Eu atoms that propagate along the b-axis. Electronic resistivity assessments indicate that Eu 4 Bi 6 Se 13 exhibits metallic behavior. As the magnetic field is oriented along the b-axis, magnetic characterization reveals uniaxial magnetic anisotropy, with metamagnetic transitions appearing at approximately 12 kOe and a lower field. In the field below 10 kOe, the spin-flop transition is observed with possible domain-induced hysteresis. This behavior supports the identification of metamagnetic features in field-dependent measurements attributable to the europium spins.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Structural Design of Bismuth Telluride Nanoplates through Process Variables

Binary pnictogen chalcogen compounds, primarily bismuth tellurides and selenides, are of great interest due to their applications in emerging quantum devices, as well as thermoelectric generators. The performance of bismuth telluride in these roles depends on its structure at the nanoscale, particularly the size, shape, and crystallinity of its nanocrystalline forms. However, current methods for controlling these features are often slow, inconsistent, or difficult to scale. Here, we demonstrate that through a solvothermal synthesis and hot injection process, precise control over the morphology of bismuth telluride nanoplates is possible with independent tuning of process variables, such as temperature and reaction time. We find that the nanoplate shape and internal porosity vary systematically with synthesis temperature and that the same morphological outcomes can be rapidly achieved at a fixed temperature by adjusting reaction duration. These results reveal that both the temperature and time can independently direct bismuth telluride morphological features, allowing for rapid, tunable synthesis strategies. Our approach offers a scalable framework, not only for bismuth telluride but also for related layered chalcogenides used in energy harvesting and quantum technologies.

Ackley, Jordan [Boise State Univ., ID (United Stat↗
DOE OSTI2022

Li x (C 5 H 5 N) y Fe 2– z Se 2 : A Defect-Resilient Expanded-Lattice High-Temperature Superconductor

Two-dimensional iron chalcogenide intercalates display a remarkable correlation of the interlayer spacing with enhancement of the superconducting critical temperature (T c ). In this work, synchrotron X-ray absorption (XAS; at the Fe and Se K-edges) and emission (XES; at the Fe Κβ) spectroscopies allow one to discuss how the important rise of T c (~44 K) in the molecule-intercalated Li x (C 5 H 5 N) y Fe 2-z Se 2 relates to the electronic and local structural changes felt by the inorganic host upon doping (x). XES shows that widely separated layers of edge-sharing FeSe 4 tetrahedra carry low-spin moieties, with a local Fe magnetic moment slightly reduced compared to the parent β-Fe 2-z Se 2 . Pre-edge XAS expresses the progressively reduced mixing of metal 3d-4p states upon lithiation. Doping-mediated local lattice modifications, probed by conventional T c optimization measures (cf. the anion height and FeSe 4 tetrahedra regularity), become less relevant when layers are spaced far away. On the basis of extended X-ray absorption fine structure, such distortions are compensated by a softer Fe network that relates to Fe-site vacancies, alleviating electron-lattice correlations and superconductivity. Density functional theory (DFT) guided modification of the isolated Fe 2-z Se 2 (z, vacant sites) planes, resembling the host layers, identify that Fe-site deficiency occurs at low energy cost, giving rise to stretched Fe sheets, in accordance with experiments. Here, the robust high-T c in Li x (C 5 H 5 N) y Fe 2-z Se 2 , arises from the interplay of electron-donating spacers and the iron selenide layer's tolerance to defect chemistry, a tool to favorably tune its Fermi surface properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Small-Molecule Models of Hydrogen-Evolving MX 2 (M = Mo, W; X = S, Se) Bulk Solids: Composition–Activity Relationships

Triangular metal chalcogenide clusters of the form [M 3 Q 7 L 3 ]An (M = Mo or W; Q = S or Se; L = i Bu 2 NCS 2 – , (CF 3 CH 2 ) 2 NCS 2 – , i Bu 2 NCSe 2 – , or i Bu 2 PS 2 – ; An = Cl – or I – ) have been investigated as molecular analogues of layered metal dichalcogenide (MX 2 ) H 2 -evolution catalysts. These clusters have been evaluated for their relative H 2 -evolving ability under a common photolysis protocol implementing [Ru(bpy) 3 ] 2+ as chromophore and Et 3 N as sacrificial electron donor. With M constant as Mo and with constant supporting ligand, clusters with an all-sulfide core enable greater H 2 -TON than clusters with an all-selenide core. A more active catalyst is produced by [Mo 3 S 7 (S 2 CN i Bu 2 ) 3 ] + I – than its W 3 analogue with the same core sulfide composition and supporting dithiocarbamate ligands. Dichalcogenocarbamate ligands provide more active catalysts than dialkyldithiophosphate ligated clusters, and within the dichalcogenocarbamate set, greater H 2 -turnovers correlate with more-electron-donating ligands (i.e., i Bu 2 NCS 2 – > (CF 3 CH 2 ) 2 NCS 2 – > i Bu 2 NCSe 2 – ). Cluster cations with Cl – as counteranion are very similar in activity H 2 -evolving levels to identical clusters with I – , ruling out any significant interfering effect by I – upon the electron transfer relay between Et 3 N and catalyst. In the aggregate, observations are consistent with a mechanism for H 2 evolution that involves reductive extrusion of H 2 from a metal hydride intermediate.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Calculating and Characterizing the Charge Distributions in Solids

Accurate estimation of the partial atomic charges on metal centers is useful for understanding electronic and catalytic properties of materials. However, different methods of calculating these charges may give quite different results; this issue has been more widely studied for molecules than for solids. Here we study the charges on the metal centers of a test set of 18 solids containing transition metals by using density functional theory with several density functionals (PBE, PBE+U, TPSS, revTPSS, HLE17, revM06-L, B3LYP, B3LYP*, and other exchange-modified B3LYP functionals) and four charge models (Bader, Hirshfeld, CM5, and DDEC6). The test set contains 12 systems with nonmagnetic metal centers (eight metal oxides (MO 2 ), two metal sulfides (MS 2 ), and two metal selenides (MSe 2 )) and six ferromagnetic transition metal complexes. Our study shows that, among the four types of charges, Bader charges are the highest and Hirshfeld charges are the lowest for all the systems, regardless of the functional being used. The CM5 charges are bigger than DDEC6 charges for MX 2 with M = Ti or Mo and X = S or Se, but for the other 14 cases they are lower. We found that the most of the systems are sensitive to the Hubbard U parameters in PBE+U and to the percentage X of Hartree–Fock exchange in exchange-modified B3LYP; as we increase U or X, the charges on the metal atoms in MX 2 increase steadily. Testing different density functionals shows charges calculated with higher Hubbard U parameters in PBE+U are comparable to B3LYP (with 20% Hartree–Fock exchange). Among four meta-GGA functionals studied, the charges with HLE17 have the closest agreement with B3LYP. In conclusion, the variation of charges with choice of charge model is greater than the variation with choice of density functional.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Synthesis of Tunable SnS-TaS 2 Nanoscale Superlattices

Nanoscale superlattices represent a compelling platform for designed materials as the specific identity and spatial arrangement of constituent layers can lead to tunable properties. A number of kinetically stabilized, nonepitaxial superlattices with almost limitless structural tunability have been reported in telluride and selenide chemistries but have not yet been extended to sulfides. Here, we present SnS-TaS 2 nanoscale superlattices with tunable layer architecture. Layered amorphous precursors are prepared as thin films programmed to mimic the targeted superlattice; subsequent low temperature annealing activates self-assembly into crystalline nanocomposites. We investigate structure and composition of superlattices comprised of monolayers of TaS 2 and 3–7 monolayers of SnS per repeating unit. Furthermore, a graded precursor preparation approach is introduced, allowing stabilization of superlattices with multiple stacking sequences in a single preparation. Controlled synthesis of the architecture of nanoscale superlattices is a critical path toward tuning their exotic properties and enabling integration with electronic, optical, or quantum devices.

36 MATERIALS SCIENCE↗