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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Understanding the effect of refractory metal chemistry on the stacking fault energy and mechanical property of Cantor-based multi-principal element alloys

Multi-principal-element alloys (MPEAs) based on 3d-transition metals show remarkable mechanical properties. In this study, the stacking fault energy (SFE) in face-centered cubic (fcc) alloys is a critical property that controls underlying deformation mechanisms and mechanical response. Here, we present an exhaustive density-functional theory study on refractory- and copper-reinforced Cantor-based systems to ascertain the effects of refractory metal chemistry on SFE. We find that even a small percent change in refractory metal composition significantly changes SFEs, which correlates favorably with features like electronegativity variance, size effect, and heat of fusion. For fcc MPEAs, we also detail the changes in mechanical properties, such as bulk, Young's, and shear moduli, as well as yield strength. A Labusch-type solute-solution-strengthening model was used to evaluate the temperature-dependent yield strength, which, combined with SFE, provides a design guide for high-performance alloys. We also analyzed the electronic structures of two down-selected alloys to reveal the underlying origin of optimal SFE and strength range in refractory-reinforced fcc MPEAs. These new insights on tuning SFEs and modifying composition-structure-property correlation in refractory- and copper-reinforced MPEAs by chemical disorder, provide a chemical route to tune twinning- and transformation-induced plasticity behavior in fcc MPEAs.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Basic criteria for formation of growth twins in high stacking fault energy metals

Nanotwinned metals received significant interest lately as twin boundaries may enable simultaneous enhancement of strength, ductility, thermal stability, and radiation tolerance. However, nanotwins have been the privilege of metals with low-to-intermediate stacking fault energy (SFE). Recent scattered studies show that nanotwins could be introduced into high SFE metals, such as Al. In this paper, we examine several sputter-deposited, (111) textured Ag/Al, Cu/Ni, and Cu/Fe multilayers, wherein growth twins were observed in Al, Ni, and face-centered cubic (fcc) Fe. The comparisons lead to two important design criteria that dictate the introduction of growth twins in high SFE metals. The validity of these criteria was then examined in Ag/Ni multilayers. Furthermore, another twin formation mechanism in high SFE metals was discovered in Ag/Ni system.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A theoretical calculation of stacking fault energy of Ni alloys: The effects of temperature and composition

Combining cluster expansion (CE) method with one dimensional axial Ising model, this work investigated the effects of alloying elements and configurational variations due to temperature on the stacking fault energy (SFE) of FCC Ni binary alloys. Ensembles of large numbers of atomistic structures, each with more than ~400 atoms, were generated to consider sufficient long-range chemical disorder and temperature effects due to configurational entropy. Here, a Monte Carlo Metropolis algorithm was used to generate these structures, whose energies were then evaluated based on the effective cluster interactions obtained from CE. As a baseline, this work had shown the SFE of pure Ni and Al to be 127 mJ/m 2 and 137 mJ/m 2 , respectively, which agreed with the experimental values of 125 mJ/m 2 and 150 mJ/m 2 reported in the literature. Additions of Al, Ti, Cr and Co to pure Ni were found to decrease the SFE to different extents. Although temperature does not strongly influence the SFE of the FCC Ni-Al and Ni-Cr binary alloys, it can lead to significant changes to the SFE of the FCC Ni-Ti and Ni-Co alloys. While effects of temperature and composition on SFE observed in this work were calculated from binary Ni alloys, the general trends are nonetheless expected to be valid in the γ phase of multicomponent Ni superalloys.

36 MATERIALS SCIENCE↗
DOE OSTI2014

In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC

Using the fine control of an electron beam (e-beam) in scanning electron microscopy with the capabilities of both electrical and optical imaging, the stacking fault (SF) formation together with its tuning of carrier lifetime was in situ monitored and investigated in p-type 4H-SiC homoepitaxial films. The SFs were formed through engineering basal plane dislocations with the energy supplied by the e-beam. The e-beam intensity required for the SF formation in the p-type films was ∼100 times higher than that in the n-type ones. The SFs reduced the minority-carrier lifetime in the p-type films, which was opposite to that observed in the n-type case. The reason for the peculiar SF behavior in the p-type 4H-SiC is discussed with the cathodoluminescence results.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Stacking fault induced tunnel barrier in platelet graphite nanofiber

A correlation study using image inspection and electrical characterization of platelet graphite nanofiber devices is conducted. Close transmission electron microscopy and diffraction pattern inspection reveal layers with inflection angles appearing in otherwise perfectly stacked graphene platelets, separating nanofibers into two domains. Electrical measurement gives a stability diagram consisting of alternating small-large Coulomb blockade diamonds, suggesting that there are two charging islands coupled together through a tunnel junction. Based on these two findings, we propose that a stacking fault can behave as a tunnel barrier for conducting electrons and is responsible for the observed double-island single electron transistor characteristics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Multi-scale simulation of lithium diffusion in the presence of a 30° partial dislocation and stacking fault in Si

The multi-scale simulation method is employed to investigate how defects affect the performances of Li-ion batteries (LIBs). The stable positions, binding energies and dynamics properties of Li impurity in Si with a 30° partial dislocation and stacking fault (SF) have been studied in comparison with the ideal crystal. It is found that the most table position is the tetrahedral (T{sub d}) site and the diffusion barrier is 0.63 eV in bulk Si. In the 30° partial dislocation core and SF region, the most stable positions are at the centers of the octagons (Oct-A and Oct-B) and pentahedron (site S), respectively. In addition, Li dopant may tend to congregate in these defects. The motion of Li along the dislocation core are carried out by the transport among the Oct-A (Oct-B) sites with the barrier of 1.93 eV (1.12 eV). In the SF region, the diffusion barrier of Li is 0.91 eV. These two types of defects may retard the fast migration of Li dopant that is finally trapped by them. Thus, the presence of the 30° partial dislocation and SF may deactivate the Li impurity and lead to low rate capability of LIB.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Long exciton lifetimes in stacking-fault-free wurtzite GaAs nanowires

We present a combined photoluminescence and transmission electron microscopy study of single GaAs nanowires. Each wire was characterized both in microscopy and spectroscopy, allowing a direct correlation of the optical and the structural properties. By tuning the growth parameters, the nanowire crystal structure is optimized from a highly mixed zincblende–wurtzite structure to pure wurtzite. We find the latter one to be stacking-fault-free over nanowire lengths up to 4.1 μm. We observe the emission of purely wurtzite nanowires to occur only with polarization directions perpendicular to the wurtzite c{sup ^}-axis, as expected from the hexagonal unit cell symmetry. The free exciton recombination energy in the wurtzite structure is 1.518 eV at 5 K with a narrow linewidth of 4 meV. Most notably, these pure wurtzite nanowires display long carrier recombination lifetimes of up to 11.2 ns, exceeding reported lifetimes in bulk GaAs and state-of-the-art 2D GaAs/AlGaAs heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Stacking faults and interface roughening in semipolar (202{sup ¯}1{sup ¯}) single InGaN quantum wells for long wavelength emission

The microstructure of InGaN single quantum wells (QWs) grown in semipolar (202{sup ¯}1{sup ¯}) orientation on GaN substrates was studied by transmission electron microscopy. Stress relaxation in the lattice mismatch In{sub x}Ga{sub 1−x}N layer was realized by forming partial misfit dislocations associated with basal plane stacking faults (BPSFs). For given composition x = 0.24, BPSFs formation was observed when the QW thickness exceeded 4 nm. The high density of partial threading dislocations that bound the BPSFs is detrimental to light-emitting device performance. Interface roughening (faceting) was observed for both upper and lower QW interfaces (more pronounced for upper interface) and was found to increase with the thickness of the QW. BPSFs had a tendency to nucleate at roughened interface valleys.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Tunable stacking fault energies by tailoring local chemical order in CrCoNi medium-entropy alloys

High-entropy alloys (HEAs) are an intriguing new class of metallic materials due to their unique mechanical behavior. Achieving a detailed understanding of structure–property relationships in these materials has been challenged by the compositional disorder that underlies their unique mechanical behavior. Accordingly, in this work, we employ first-principles calculations to investigate the nature of local chemical order and establish its relationship to the intrinsic and extrinsic stacking fault energy (SFE) in CrCoNi medium-entropy solid-solution alloys, whose combination of strength, ductility, and toughness properties approaches the best on record. We find that the average intrinsic and extrinsic SFE are both highly tunable, with values ranging from –43 to 30 mJ•m –2 and from –28 to 66 mJ•m –2 , respectively, as the degree of local chemical order increases. The state of local ordering also strongly correlates with the energy difference between the face-centered cubic ( fcc ) and hexagonal close-packed ( hcp ) phases, which affects the occurrence of transformation-induced plasticity. Here, this theoretical study demonstrates that chemical short-range order is thermodynamically favored in HEAs and can be tuned to affect the mechanical behavior of these alloys. It thus addresses the pressing need to establish robust processing–structure–property relationships to guide the science-based design of new HEAs with targeted mechanical behavior.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire sidewalls

The optical properties of m-plane InGaN/GaN quantum wells grown on microwire sidewalls were investigated carrying out a correlative scanning transmission electron microscopy (STEM), atom probe tomography (APT), and micro-photoluminescence study applied on single nanoscale field-emission tips obtained by a focused ion beam annular milling. Instead of assuming simple rectangular composition profiles, yielding misleading predictions for the optical transition energies, we can thus take into account actual compositional distributions and the presence of stacking faults (SFs). SFs were shown to be responsible for a lowering of the recombination energies of the order of 0.1 eV with respect to those expected for defect-free quantum wells (QWs). Such energy reduction allows establishing a good correspondence between the transition energies observed by optical spectroscopy and those calculated on the basis of the QWs In measured composition and distribution assessed by STEM structural analysis and APT chemical mapping.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Exploring the relation between transonic dislocation glide and stacking fault width in FCC metals

Theory predicts limiting gliding velocities that dislocations cannot overcome. Computational and recent experiments have shown that these limiting velocities are soft barriers and dislocations can reach transonic speeds in high rate plastic deformation scenarios. In this paper we systematically examine the mobility of edge and screw dislocations in several face centered cubic (FCC) metals (Al, Au, Pt, and Ni) in the extreme large-applied-stress regime using molecular dynamics simulations. Our results show that edge dislocations are more likely to move at transonic velocities due to their high mobility and lower limiting velocity than screw dislocations. Importantly, among the considered FCC metals, the dislocation core structure determines the dislocation’s ability to reach transonic velocities. This is likely due to the variation in stacking fault width due to relativistic effects near the limiting velocities.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Large-Scale Molecular Dynamics Simulation Studies on Deformation of Ni Nanowires: Surface Profile, Defects and Stacking Fault Width Analysis

We report large-scale molecular dynamics simulation deformation studies of Ni nanowire (NW) of size 100 Å (x) × 1000 Å (y) × 100 Å (z) comprising of 925,965 atoms. Surface and internal defects are introduced to study their effect on the surface profile, strength, fracture behavior and deformation mechanisms. Tensile tests have been carried out at a temperature of 10 K and at a strain rate of 10{sup 8} s{sup −1}. Periodic boundary condition is applied along the loading direction (y). Peak strength of 23 GPa is observed in the perfect NW, and the strength decreases with defects. The surface profiles of the deformed NWs show intrusion and extrusion regions corresponding to slip steps with wider valleys in the defect NWs. Several intrinsic and extrinsic parallel stacking faults (SFs) are generated after yielding by slip occurring on {111} planes. The calculated SF widths are in the range of 0.85-2.57 nm in the perfect NW. The dislocations are mainly Shockley partial dislocations of type 1/6 〈112〉, and Schmid’s factor (m) obtained is 0.471. Twinning dislocation of types 1/9 〈221〉 and 1/18 〈172〉 is also observed in the SFs. The density of Shockley partial dislocations is observed to be the maximum in all the NWs.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Nanoscale fluctuation of stacking fault energy strengthens multi-principal element alloys

Chemical randomness and the associated energy fluctuation are essential features of multi-principal element alloys (MPEAs). Due to these features, nanoscale stacking fault energy (SFE) fluctuation is a natural and independent contribution to strengthening MPEAs. However, existing models for conventional alloys (i.e., alloys with one principal element) cannot be applied to MPEAs. The extreme values of SFEs required by such models are unknown for MPEAs, which need to calculate the nanoscale volume relevant to the SFE fluctuation. In the present work, we developed an analytic model to evaluate the strengthening effect through the SFE fluctuation, profuse in MPEAs. The model has no adjustable parameters, and all parameters can be determined from experiments and ab initio calculations. Further, this model explains available experimental observations and provides insightful guidance for designing new MPEAs based on the SFE fluctuation. It generally applies to MPEAs in random states and with chemical short-range order.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Charge-density based convolutional neural networks for stacking fault energy prediction in concentrated alloys

A descriptor-less machine learning (ML) model based only on charge density images extracted from density functional theory (DFT) is developed to predict stacking fault energies (SFE) in concentrated alloys. The model is based on convolutional neural networks (CNNs) as one of the promising ML techniques for dealing with complex images and data. Identification of correct descriptors is a key bottleneck to develop ML models for predicting materials properties. Often, in most ML models, textbook physical descriptors such as atomic radius, valence charge and electronegativity are used as descriptors which have limitations because these properties change in concentrated alloys when multiple elements are mixed to form a solid solution. Here, we illustrate that, within the scope of DFT, the search for descriptors can be circumvented by electronic charge density, which is the backbone of the Kohn-Sham DFT and describes the system completely. The performance of our model is demonstrated by predicting SFE of concentrated alloys with an RMSE and R 2 of 6.18 mJ/m 2 and 0.87, respectively, validating the accuracy of the proposed approach.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS 2

Electronic properties of two-dimensional (2D) MoS 2 semiconductors can be modulated by introducing specific defects. One important type of defect in 2D layered materials is known as rotational stacking fault (RSF), but the coexistence of multiple RSFs with different rotational angles was not directly observed in freestanding 2D MoS 2 before. In this report, we demonstrate the coexistence of three RSFs with three different rotational angles in a freestanding bilayer MoS 2 sheet as directly observed using an aberration-corrected transmission electron microscope (TEM). Our analyses show that these RSFs originate from cracks and dislocations within the bilayer MoS 2 . First-principles calculations indicate that RSFs with different rotational angles change the electronic structures of bilayer MoS 2 and produce two new symmetries in their bandgaps and offset crystal momentums. Therefore, employing RSFs and their coexistence is a promising route in defect engineering of MoS 2 to fabricate suitable devices for electronics, optoelectronics, and energy conversion.

Science & Technology - Other Topics↗
DOE OSTI2018

From random stacking faults to polytypes: A 12-layer NiSn 4 polytype

NiSn 4 grows in diffusion couples (Ni plates with electrodeposited Sn) in a temperature range from room temperature up to 353 K. Previously, the crystal structure of NiSn 4 grown at ambient temperature was identified to be an intermediate stacking variant between the orthorhombic PtSn 4 -type and the tetragonal β-IrSn 4 -type structure, with a slight tendency towards the tetragonal type. Now it is reported that NiSn 4 forming at 333 K and above, exhibits a 12-layer polytype (space group P4 2 /nbc, a = b = 6.250 Å, c = 69.00 Å) due to ordered incorporation of stacking faults into the structure. Here, this NiSn 4 structure was derived by comparison of its diffraction patterns with those of the exhaustively generated NiSn 4 polytypes. First-principles calculations on a series of selected NiSn 4 polytypes demonstrate that the experimentally observed polytype is energetically favoured as compared to others.

36 MATERIALS SCIENCE↗
NASA NTRS1991

The mechanisms and temperature dependence of superlattice stacking fault formation in the single-crystal superalloy PWA 1480

The mechanism of the formation of superlattice staking faults in the single-crystal nickel-base superalloy PWA 1480 was investigated by observing deformation microstructures in the superalloy single crystals in the temperature range 20-1100 C. Results showed that, in addition to superlattice stacking faults observed after slow strain rate deformation at temperatures from 700 to 950 C, a high-density of superlattice staking faults formed after deformation at 200 C and below. The mechanisms of fault formation, which are different in the high- and the low-temperature regimes, are discussed.

Milligan, Walter W.↗
DOE OSTI2015

Segregation at stacking faults within the γ′ phase of two Ni-base superalloys following intermediate temperature creep

Using state-of-the-art energy dispersive spectroscopy, it has been established for the first time that there exists significant compositional variation (enrichment of Co and Cr and deficiency of Ni and Al) associated with superlattice intrinsic stacking faults created in the ordered γ' precipitates following intermediate temperature deformation of two commercial superalloys. The results indicate that long range diffusion of these elements is intimately involved in the precipitate shearing process and is therefore closely linked to the time-dependent deformation of the alloys.

36 MATERIALS SCIENCE↗