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CADAT multiport-in-two dimensions program (MP2D) is powerful placement and routing aid for processing double-ended cell equivalents of high-speed silicon-onsapphire (SOS) standard-cell family. Basic purpose of MP2D is to design high-density large-integrated (LSI) arrays.
A sputtering system was developed to deposit aluminum and aluminum alloys by the dc sputtering technique. This system is designed for a high level of cleanliness and for monitoring the deposition parameters during film preparation. This system is now ready for studying the deposition and annealing parameters upon double-level metal preparation. A technique recently applied for semiconductor analysis, the finite element method, was studied for use in the computer modeling of two dimensional MOS transistor structures. It was concluded that the method has not been sufficiently well developed for confident use at this time. An algorithm was developed for confident use at this time. An algorithm was developed for implementing a computer study which is based upon the finite difference method. The program which was developed was modified and used to calculate redistribution data for boron and phosphorous which had been predeposited by ion implantation with range and straggle conditions. Data were generated for 111 oriented SOS films with redistribution in N2, dry O2 and steam ambients.
Progress in developing the application of ion implantation techniques to silicon gate CMOS/SOS processing is described. All of the conventional doping techniques such as in situ doping of the epi-film and diffusion by means of doped oxides are replaced by ion implantation. Various devices and process parameters are characterized to generate an optimum process by the use of an existing SOS test array. As a result, excellent circuit performance is achieved. A general description of the all ion implantation process is presented.
A system was developed for depositing aluminum and aluminum alloys by the D.C. sputtering technique. This system which was designed for a high level of cleanliness and ion monitoring the deposition parameters during film preparation is ready for studying the deposition and annealing parameters upon double level metal preparation. The finite element method was studied for use in the computer modeling of two dimensional MOS transistor structures. An algorithm was developed for implementing a computer study which is based upon the finite difference method. The program was modified and used to calculate redistribution data for boron and phosphorous which had been predeposited by ion implantation with range and straggle conditions typical of those used at MSFC. Data were generated for 111 oriented SOS films with redistribution in N2, dry O2 and steam ambients. Data are given showing both two dimensional effects and the evolution of the junction depth, sheet resistance and integrated dose with redistribution time.
Simulations of various phosphorus and boron diffusions in SOS were completed and a sputtering system, furnaces, and photolithography related equipment were set up. Double layer metal experiments initially utilized wet chemistry techniques. By incorporating ultrasonic etching of the vias, premetal cleaning a modified buffered HF, phosphorus doped vapox, and extended sintering, yields of 98% were obtained using the standard test pattern. A two dimensional modeling program was written for simulating short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide silicon interface. Although the program is incomplete, the two dimensional Poisson equation for the potential distribution was achieved. The status of other Z-D MOSFET simulation programs is summarized.
A solid on solid (SOS) Monte Carlo computer simulation employing a potential energy scaling technique was used to model the initial stages of thin film growth. The model monitors variations in the vertical interaction potential that occur due to the arrival or departure of selected adatoms or impurities at all sites in the 400 sq. ft. array. Boltzmann ordered statistics are used to simulate fluctuations in vibrational energy at each site in the array, and the resulting site energy is compared with threshold levels of possible atomic events. In addition to adsorption, desorption, and surface migration, adatom incorporation and diffusion of a substrate atom to the surface are also included. The lateral interaction of nearest, second nearest, and third nearest neighbors is also considered. A series of computer experiments are conducted to illustrate the behavior of the model.
It is pointed out that for the past several years, one school of IC designers has used a simplified set of nMOS geometric design rules (GDR) which is 'portable', in that it can be used by many different nMOS manufacturers. The present investigation is concerned with a preliminary set of design rules for bulk CMOS which has been verified for simple test structures. The GDR are defined in terms of Caltech Intermediate Form (CIF), which is a geometry-description language that defines simple geometrical objects in layers. The layers are abstractions of physical mask layers. The design rules do not presume the existence of any particular design methodology. Attention is given to p-well and n-well CMOS processes, bulk CMOS and CMOS-SOS, CMOS geometric rules, and a description of the advantages of CMOS technology.
Recent testing of the SRB/MLP Frangible Nut System (SOS Part Number 114850-9/Boosters P/N 114848-3) at NASA indicated a need to reduce the function time between boosters (2) within a single frangible nut. These boosters are initiated separately by electrical impulse(s). Coupling the output of each detonator with an explosive cross-over would reduce the function time between boosters (independent of electrical impulse) while providing additional redundancy to the system. The objectives of this program were to: provide an explosive cross-over between boosters, reduce function time between boosters to less than one (1) millisecond within a given nut, reduce cost of boosters, be compatible with the existing frangible nut system, and meet requirements of USBI Spec's (nut 10SPC-0030, booster 10SPC-0031).
The purpose of this paper is to quantify the impact of the FGGE SOS on the GLAS analyses and forecasts in the Southern Hemisphere, and to evaluate the relative importance of its components, and in particular, the impact of the loss of surface buoys. This discussion is limited to the forecast impact of the FGGE system upon a region between 28 deg S and 56 deg S, 50 deg W-80 W which includes essentially the southern cone of South America. Although forecast skill is verified against the NMC analysis, which used only VTPR but no TIROS-N data in the Southern Hemisphere, enough conventional data exists over this region to avoid biased verifications.
Two digital computer programs were developed for use in experiments involving steady-state visual evoked response (VER): VERRUN, whose primary functions are to generate a sum-of-sines (SOS) stimulus and to digitize and store electro-cortical response; and VERNAL, which provides both time- and frequency-domain metrics of the evoked response. These programs were coded in FORTRAN for operation on the PDP-11/34, using the RSX-11 Operating System, and the PDP-11/23, using the RT-11 Operating System. Users' and programmers' guides to these programs are provided, and guidelines for model analysis of VER data are suggested.
The purpose of this paper is to quantify the impact of the FGGE SOS on the GLAS analyses and forecasts in the Southern Hemisphere, and to evaluate the relative importance of its components, and in particular, the impact of the loss of surface buoys. This discussion is limited to the forecast impact of the FGGE system upon a region between 28 deg S and 56 deg S, 50 deg W-80 W which includes essentially the southern cone of South America. Although forecast skill is verified against the NMC analysis, which used only VTPR but no TIROS-N data in the Southern Hemisphere, enough conventional data exists over this region to avoid biased verifications.
Reservations were expressed concerning the sum of squares wind recovery algorithm and the power law model function. The SAS sum of squares (SOS) method for recovering winds from backscatter data leads to inconsistent results when V pol and H pol winds are compared. A model function that does not use a power law and that accounts for sea surface temperature is needed and is under study both theoretically and by means of the SASS mode 4 data. Aspects of the determination of winds by means of scatterometry and of the utilization of vector wind data for meteorological forecasts are elaborated. The operational aspect of an intermittent assimilation scheme currently utilized for the specification of the initial value field is considered with focus on quantifying the absolute 12-hour linear displacement error of the movement of low centers.
Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.
Difficulties related to the paucity of weather observation data regarding oceans were potentially alleviated for three summer months in 1978 when NASA's Seasat telemetered data from three wind-measuring instruments. The present study is concerned with one of these instruments, the Seasat A Scatterometer System (SASS). Attention is given to an internal consistency check of the SASS 1 model, comparisons of SASS 1 and other model-predicted winds with in situ winds, and a brief summary of the principal findings. It is found that a new wind retrieval system is required if SASS wind data are to be globally applicable and, at the same time, are to meet the required performance specifications. The sum-of-squares (SOS) technique for inverting SASS NRCS (normalized radar cross section) measurements results in the discarding of valuable data in low-speed areas and for higher incidence angles.
Simulation of spacecraft on-orbit operations is discussed in reference to Martin Marietta's Space Operations Simulation laboratory's use of computer software models to drive a six-degree-of-freedom moving base carriage and two target gimbal systems. In particular, key simulation issues and related computer software models associated with providing real-time, man-in-the-loop simulations of the Manned Maneuvering Unit (MMU) are addressed with special attention given to how effectively these models and motion systems simulate the MMU's actual on-orbit operations. The weightless effects of the space environment require the development of entirely new devices for locomotion. Since the access to space is very limited, it is necessary to design, build, and test these new devices within the physical constraints of earth using simulators. The simulation method that is discussed here is the technique of using computer software models to drive a Moving Base Carriage (MBC) that is capable of providing simultaneous six-degree-of-freedom motions. This method, utilized at Martin Marietta's Space Operations Simulation (SOS) laboratory, provides the ability to simulate the operation of manned spacecraft, provides the pilot with proper three-dimensional visual cues, and allows training of on-orbit operations. The purpose here is to discuss significant MMU simulation issues, the related models that were developed in response to these issues and how effectively these models simulate the MMU's actual on-orbiter operations.
Boron-arsenic and boron-phosphorus films have been grown on Si sapphire and silicon-on-sapphire (SOS) by pyrolyzing Group 3 alkyls of boron, i.e., trimethylborane (TMB) and triethylborane (TEB), in the presence of AsH3 and PH3, respectively, in an H2 atmosphere. No evidence for reaction between the alkyls and the hydrides on mixing at room temperature was found. However, the films were predominantly amorphous. The film growth rate was found to depend on the concentration of alkyl boron compound and was essentially constant when TEB and AsH3 were pyrolyzed over the temperature range 550 C to 900 C. The films were found to contain mainly carbon impurities (the amount varying with growth temperature), some oxygen, and were highly stressed and bowed on Si substrates, with some crazing evident in thin (2 micron) B-P and thick (5 micron) B-As films. The carbon level was generally higher in films grown using TEB as the boron source. Films grown from PH3 and TMB showed a higher carbon content than those grown from AsH3 and TMB. Based on their B/As and B/P ratios, films with nominal compositions B sub12-16 As2 and B sub1.1-1.3 P were grown using TMB as the boron source.
Systems analysis techniques were developed and demonstrated for modeling the electroencephalographic (EEG) steady state visual evoked response (ssVER), for use in EEG data compression and as an indicator of mental workload. The study focused on steady state frequency domain stimulation and response analysis, implemented with a sum-of-sines (SOS) stimulus generator and an off-line describing function response analyzer. Three major tasks were conducted: (1) VER related systems identification material was reviewed; (2) Software for experiment control and data analysis was developed and implemented; and (3) ssVER identification and modeling was demonstrated, via a mental loading experiment. It was found that a systems approach to ssVER functional modeling can serve as the basis for eventual development of a mental workload indicator. The review showed how transient visual evoked response (tVER) and ssVER research are related at the functional level, the software development showed how systems techniques can be used for ssVER characterization, and the pilot experiment showed how a simple model can be used to capture the basic dynamic response of the ssVER, under varying loads.
The Consultative Committee for Space Data Systems (CCSDS) has begun the development of a set of protocol recommendations for Advanced Orbiting Systems (SOS). The AOS validation program and formal definition of AOS protocols are reviewed, and the configuration control of the AOS formal specifications is summarized. Independent implementations of the AOS protocols by NASA and ESA are discussed, and cross-support/interoperability tests which will allow the space agencies of various countries to share AOS communication facilities are addressed.