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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Performance Improvements on SNS and HFIR Instrument Data Reduction Workflows Using Mantid

Performance of data reduction workflows at the High Flux Isotope Reactor (HFIR) and the Spallation Neutron Source (SNS) at Oak Ridge National Laboratory (ORNL) is mainly determined by the time spent loading raw measurement events stored in large and sparse datasets. This paper describes: (1) our long-term view to leverage SNS and HFIR data management needs with our experience at ORNL’s world-class high performance computing (HPC) facilities, and (2) our short-term efforts to speed up current workflows using Mantid, a data analysis and reduction community framework used across several neutron scattering facilities. We show that minimally invasive short-term improvements in metadata management have a moderate impact in speeding up current production workflows. We propose a more disruptive domain-specific solution: the No Cost Input Output (NCIO) framework, we provide an overview, the risks and challenges in NCIO’s adoption by HFIR and SNS stakeholders.

Godoy, William↗
DOE OSTI2017

New insights into the structure, chemistry, and properties of Cu 4 SnS 4

The ambient temperature structure of Cu 4 SnS 4 has been revisited and the recently reported low temperature structure has been confirmed from single-crystal X-ray diffraction data. A structural phase transition from a large monoclinic unit cell at low temperature to a smaller orthorhombic unit cell at high temperature has been observed. The room temperature phase exhibited disorder in the two copper sites, which is a different finding from earlier reports. The low temperature monoclinic form crystallizes in P2 1 /c space group, which is isostructural with Cu 4 GeS 4 . The phase transition has also been studied with variable temperature powder X-ray diffraction and 119 Sn Mössbauer spectroscopy. The Seebeck coefficients and electrical resistivity of polycrystalline Cu 4 SnS 4 are reported from 16 to 400 K on hot pressed pellets. Thermal conductivity measurements at high temperatures, 350 – 750 K exhibited very low thermal conductivities in the range 0.28 – 0.35 W K –1 m –1 . In all the transport measurements the phase transition has been observed at around 232 K. Resistivity decreases, while Seebeck coefficient increases after the phase transition during warming up from low to high temperatures. This change in resistivity has been correlated with the results of first-principles electronic band structure calculations using highly-accurate screened-exchange local density approximation. It was found that both the low hole effective mass of 0.63 me for the Γ→Y crystallographic direction and small band gap, 0.49 eV, are likely to contribute to the observed higher conductivity of the orthorhombic phase. Cu 4 SnS 4 is also electrochemically active and shows reversible reaction with lithium between 1.7 and 3.5 volts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2012

Determination of thermal and electronic carrier transport properties of SnS thinfilms using photothermal beam deflection technique

Graphical abstract: Display Omitted Highlights: ► Determination of carrier transport properties of SnS thin films non-destructively. ► SnS thin films were deposited by chemical spray pyrolysis technique. ► Photothermal beam deflection technique is used for film analysis. ► Optimization of film deposition parameters. ► Photothermal imaging of SnS films. -- Abstract: Photothermal beam deflection technique is an efficient tool for non-destructive evaluation of thin films. Thin films of tin mono sulphide, which find application as absorber layer in photovoltaic cells, were deposited by chemical spray pyrolysis technique and their carrier transport properties were determined using photothermal beam deflection technique. Thermal diffusivity, minority carrier lifetime, mobility and surface recombination velocity of these films fabricated under different spray conditions like varying spray rate, Sn/S ratio and substrate temperature were determined. Photothermal beam deflection technique was also employed for constructing the thermal images of these films to evaluate the film uniformity.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Design and Prototyping of an Ionization Profile Monitor for the SNS Accumulator Ring

An ionization profile monitor (IPM) has been designed for the Spallation Neutron Source (SNS) accumulator ring. Utilizing ionized electrons produced by beam-gas ionization, the SNS IPM uses a 120 kV bias potential to overcome beam space charge and accelerate electrons towards a movable particle detector. A 300 G magnetic field is used to confine the transverse electron motion, resulting in profile errors at the estimated 7% level. With a system bandwidth of 17.5 MHz. The SNS IPM is capable of measuring turn-by-turn beam profiles for a fully accumulated beam. This paper presents a description of the system and design.

Bartkoski, Dirk A↗
DOE OSTI2021

Experimental and simulated heating in nanocrystalline diamond charge exchange injection films using an electron beam to mimic SNS conditions

Nanocrystalline diamond (NCD) foils have been in use at the Spallation Neutron Source as primary stripper foils for charge exchange injection since the machine’s inception. NCD’s low atomic number leads to reduced beam scattering while still being easy to handle, as opposed to even lighter elements. NCD foils also have the benefit of being free-standing, and rigid when grown under the right conditions to minimize residual stresses. This study overviews a method to mimic the Spallation Neutron Source (SNS) beam and characterize thermally driven failure of NCD foils. To do this, a foil test stand was developed with in situ diagnostics that tracks signs of foil sublimation and thinning. The foil test stand’s electron beam is equated to the SNS beamline by comparing peak deposited energy densities for both beams. Post-mortem testing is also conducted to help elucidate changes the NCD foils undergo during exposure to the beam. Further, a COMSOL simulation was also developed as a method to assess potential future changes to the NCD film and predict how changes to beam conditions will effect foil temperatures. This method allows for examination of the NCD foil’s thermal limits and can be used to assess future changes to SNS stripper foils.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Investigating the Energy Storage Mechanism of SnS 2 -rGO Composite Anode for Advanced Na-Ion Batteries

Tin sulfide–reduced graphene oxide (SnS 2 -rGO) composite material is investigated as an advanced anode material for Na-ion batteries. It can deliver a reversible capacity of 630 mAh g –1 with negligible capacity loss and exhibits superb rate performance. Here, the energy storage mechanism of this SnS 2 -rGO anode and the critical mechanistic role of rGO will be revealed in detail. A synergistic mechanism involving conversion and alloying reactions is proposed based on our synchrotron X-ray diffraction (SXRD) and in situ X-ray absorption spectroscopy (XAS) results. Contrary to what has been proposed in the literature, we determined that Na 2 S 2 forms instead of Na 2 S at the fully discharge state. The as-formed Na 2 S 2 works as a matrix to relieve the strain from the huge volume expansion of the Na–Sn alloy reaction, shown in the high resolution transmission electron microscope (HRTEM). In addition, the Raman spectra results suggest that the rGO not only assists the material to have better electrochemical performance by preventing particle agglomeration of the active material but also coordinates with Na-ions through electrostatic interaction during the first cycle. Here, the unique reaction mechanism in SnS 2 -rGO offers a well-balanced approach for sodium storage to deliver high capacity, long-cycle life, and superior rate capability.

25 ENERGY STORAGE↗
DOE OSTI2021

A Low-Temperature Structural Transition in Canfieldite, Ag 8 SnS 6 , Single Crystals

Canfieldite, Ag 8 SnS 6 , is a semiconducting mineral notable for its high ionic conductivity, photosensitivity, and low thermal conductivity. In this paper, we report the solution growth of large single crystals of Ag 8 SnS 6 of mass up to 1 g from a ternary Ag–Sn–S melt. On cooling from high temperature, Ag 8 SnS 6 undergoes a known cubic ($F\bar{4}3m$) to orthorhombic ($Pna2_1$) phase transition at ≈460 K. By studying the magnetization and thermal expansion between 5–300 K, we discover a second structural transition at ≈120 K. Single crystal X-ray diffraction reveals the low-temperature phase adopts a different orthorhombic structure with space group $Pmn2_1$ ($\textit{a}$ = 7.662 9(5) Å, $\textit{b}$ = 7.539 6(5) Å, $\textit{c}$ = 10.630 0(5) Å, Z = 2 at 90 K) that is isostructural to the room-temperature forms of the related Se-based compounds Ag 8 SnSe 6 and Ag 8 GeSe 6 . The 120 K transition is first-order and has a large thermal hysteresis. On the basis of the magnetization and thermal expansion data, the room-temperature polymorph can be kinetically arrested into a metastable state by rapidly cooling to temperatures below 40 K. We last compare the room- and low-temperature forms of Ag8SnS6 with its argyrodite analogues, Ag 8 TQ 6 ($\textit{T}$ = Si, Ge, Sn; $\textit{Q}$ = S, Se), and identify a trend relating the preferred structures to the unit cell volume, suggesting smaller phase volume favors the $Pna2_1$ arrangement. We support this picture by showing that the transition to the $Pmn2_1$ phase is avoided in Ge alloyed Ag 8 Sn 1–x Ge x S 6 samples as well as in pure Ag 8 GeS 6 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Spatially controlled doping of two-dimensional SnS 2 through intercalation for electronics

Doped semiconductors are the most important building elements for modern electronic devices. In silicon-based integrated circuits, facile and controllable fabrication and integration of these materials can be realized without introducing a high-resistance interface. Besides, the emergence of two-dimensional (2D) materials enables the realization of atomically thin integrated circuits. However, the 2D nature of these materials precludes the use of traditional ion implantation techniques for carrier doping and further hinders device development10. Here, we demonstrate a solvent-based intercalation method to achieve p-type, n-type and degenerately doped semiconductors in the same parent material at the atomically thin limit. In contrast to naturally grown n-type S-vacancy SnS 2 , Cu intercalated bilayer SnS 2 obtained by this technique displays a hole field-effect mobility of ~40 cm 2 V -1 s -1 , and the obtained Co-SnS 2 exhibits a metal-like behaviour with sheet resistance comparable to that of few-layer graphene. Combining this intercalation technique with lithography, an atomically seamless p–n–metal junction could be further realized with precise size and spatial control, which makes in-plane heterostructures practically applicable for integrated devices and other 2D materials. Therefore, the presented intercalation method can open a new avenue connecting the previously disparate worlds of integrated circuits and atomically thin materials.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Experimental determination of vacuum-level band alignments of SnS-based solar cells by photoelectron yield spectroscopy

Energy band offsets of SnS-based solar cell structure using various n-type semiconductors, such as CdS, SnS{sub 2}, In{sub 2}S{sub 3}, ZnIn{sub 2}Se{sub 4}, ZnO, and Mg{sub 0.3}In{sub 0.7}O, are evaluated by photoelectron yield spectroscopy. The valence band discontinuities are estimated to be 1.6 eV for both SnS/CdS and SnS/SnS{sub 2}, 0.9 eV for SnS/In{sub 2}S{sub 3}, 1.7 eV for SnS/ZnIn{sub 2}Se{sub 4}, and 1.8 eV for both SnS/ZnO and SnS/Mg{sub 0.3}Zn{sub 0.7}O. Using the valence band discontinuity values and the corresponding energy bandgaps of the layers, energy band diagrams are developed. This study implied a type-I heterostructure, appropriate for SnS-based solar cell, for the ZnIn{sub 2}Se{sub 4} or Mg{sub x}Zn{sub 1−x}O (0 ≤ x ≤ 0.3) interface and type-II for other junctions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Structural stability and electronic properties of low-index surfaces of SnS

Thin film photovoltaic cells are increasingly important for cost-effective solar energy harvesting. Layered SnS is a promising absorber material due to its high optical absorption in the visible and good doping characteristics. We use first-principles calculations based on density functional theory to study structures of low-index surfaces of SnS using stoichiometric and oxygen-containing structural models, in order to elucidate their possible effect on the efficiency of the photovoltaic device. We find that the surface energy is minimized for the surface with orientation parallel to the layer stacking direction. Compared to stoichiometric surfaces, the oxygen-containing surfaces exhibit fewer electronic states near the band gap. This reduction of near-gap surface states by oxygen should reduce recombination losses at grain boundaries and interfaces of the SnS absorber, and should be beneficial to the efficiency of the solar cell.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Ultraviolet emission from low resistance Cu{sub 2}SnS{sub 3}/SnO{sub 2} and CuInS{sub 2}/Sn:In{sub 2}O{sub 3} nanowires

SnO{sub 2} and Sn:In{sub 2}O{sub 3} nanowires were grown on Si(001), and p-n junctions were fabricated in contact with p-type Cu{sub 2}S which exhibited rectifying current–voltage characteristics. Core-shell Cu{sub 2}SnS{sub 3}/SnO{sub 2} and CuInS{sub 2}/Sn:In{sub 2}O{sub 3} nanowires were obtained by depositing copper and post-growth processing under H{sub 2}S between 100 and 500 °C. These consist mainly of tetragonal rutile SnO{sub 2} and cubic bixbyite In{sub 2}O{sub 3}. We observe photoluminescence at 3.65 eV corresponding to band edge emission from SnO{sub 2} quantum dots in the Cu{sub 2}SnS{sub 3}/SnO{sub 2} nanowires due to electrostatic confinement. The Cu{sub 2}SnS{sub 3}/SnO{sub 2} nanowires assemblies had resistances of 100 Ω similar to CuInS{sub 2}/In{sub 2}O{sub 3} nanowires which exhibited photoluminescence at 3.0 eV.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Determination of band offsets at the Al:ZnO/Cu{sub 2}SnS{sub 3} interface using X-ray photoelectron spectroscopy

The Al:ZnO/Cu{sub 2}SnS{sub 3} semiconductor heterojunction was fabricated. The structural and optical properties of the semiconductor materials were studied. The band offset at the Al:ZnO/Cu{sub 2}SnS{sub 3} heterojunction was studied using X-ray photoelectron spectroscopy technique. From the measurement of the core level energies and valence band maximum of the constituent elements, the valence band offset was calculated to be −1.1 ± 0.24 eV and the conduction band offset was 0.9 ± 0.34 eV. The band alignment at the heterojunction was found to be of type-I. The study of Al:ZnO/Cu{sub 2}SnS{sub 3} heterojunction is useful for solar cell applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Recent performance of the SNS H - ion source with a record long run

The Spallation Neutron Source (SNS) accelerator system includes a 65 keV H - injector, a 2.5 MeV radio frequency quadrupole (RFQ), a 1 GeV linac chain (DTL-CCL-SCL) and an accumulator ring. The H - injector consists of an RF-driven, Cs-enhanced, multi-cusp H - ion source and a compact, two-lens electrostatic low energy beam transport (LEBT). In 2018, a new RFQ was installed in place of the original RFQ along with upgraded ion source support infrastructure. This paper presents the operational performance and some highlights of beam studies with the SNS ion source since the new RFQ was put into operation. SNS routinely operates at 1.4 MW average beam power for three run cycles per year. During the most recently finished run, FY20B, we operated a single source for the entire run spanning ~4 months with a >99.5% availability. A single dose of cesiation was conducted during the ion source startup which yielded ≥54 mA current for the entire run with just few minor adjustments of parameters.

Han, Baoxi↗
DOE OSTI2025

XY-like incommensurate magnetic order in Ce 2 ⁢SnS 5

We report the synthesis of single crystals of Ce 2 ⁢SnS 5 through a two-stage chemical vapor transport method. The Ce 2 ⁢SnS 5 system is a member of the orthorhombic Pbam (No. 55) space group and realizes a distorted trigonal tricapped prism (TTP) crystal field around each cerium site. We characterized the sample through orientation-dependent magnetization and heat capacity measurements to probe the magnetic anisotropy in the system characteristic of XY-like anisotropic Heisenberg model behavior. Ce 2 ⁢SnS 5 furthermore enters a zero-field ordered phase under 𝑇 𝑁 =2.4 K; powder neutron diffraction measurements reveal incommensurate magnetic order near 𝑇 𝑁 . Furthermore, the system then locks into a commensurate, two-𝑞 magnetic structure below approximately 1.2 K. This commensurate structure belongs to the Shubnikov group 𝑃⁢𝑏′⁢𝑎′⁢𝑚′ ⁡(MSG 55.359) and realizes the propagation vectors $\overrightarrow{𝑞}$ = (1/3, 0, 0) and $\overrightarrow{𝑞}$ = (0, 0, 0).

Antiferromagnetism↗
DOE OSTI2023

Measurements at peak operational beam current in the SNS beam test facility

Work at the SNS beam test facility has focused on high dimensional and high dynamic range measurements of the medium energy (2.5 Mev) beam distribution. This is motivated by the need to understand and predict beam losses down to one-part-per-million. The initial demonstration of full-and-direct 6D phase space measurement was done at a current of 40 mA transported through the RFQ. Since that demonstration, more detailed studies have been performed at lower transported currents (in the range 30 mA and below). This is due to a hardware change - recent runs utilize the original SNS RFQ, which after a decade of service in the SNS achieves transmission significantly below design (50-60%, vs >80%). A short run in 2023 with a newly-commissioned RFQ enables maximum transmission. Preliminary results from beam distribution measurements during this run are discussed.

Ruisard, Kiersten↗
DOE OSTI2024

Proposed muon collider R&D at SNS

Generation of a muon beam at a Muon Collider requires relatively short, high-charge proton bunches. They are produced in a high-average-power proton driver by first accumulating a proton beam from a super-conducting linac, then bunching the beam and finally compressing and combining the bunches into a single high-intensity proton pulse. All of these beam formation stages involve handling of unprecedentedly high beam charges. Validation of these intricate beam manipulations requires better understanding of extreme space-charge effects and experimental demonstration. A facility perhaps most closely resembling the proton driver configuration and beam parameters is the Spallation Neutron Source (SNS) accelerator complex at Oak Ridge National Laboratory (ORNL). Considering the energy scaling of the space-charge parameters, many of the beam formation steps planned for the proton driver can be experimentally checked at the SNS at the relevant space-charge interaction levels. This paper discusses potential proton driver and other muon-collider-related R\&D at the SNS.

43 PARTICLE ACCELERATORS↗
DOE OSTI2017

Photonuclear Contributions to SNS Pulse Shapes

Short-pulsed sources like the Spallation Neutron Source (SNS) and ISIS produce bursts of neutron pulses at rates of 10-60 Hz, with sub-microsecond proton pulses impacting on high-Z target materials. Moderators are grouped around the target to receive the fast neutrons generated from spallation reactions to moderate them effciently to thermal and sub-thermal energies and to feed narrow neutron pulses to neutron scattering instruments. The scattering instruments use the neutrons as a probe for material investigations, and make use of time-of-flight (TOF) methods for resolving the neutron energy. The energy resolution of scattering instruments depends on the narrow time-structure of the neutron pulses, while neutrons in the long tail of the emission time distributions can degrade the instrument performance and add undesired background to measurements. The SNS neutronics team is investigating a possible source term impacting the background at short-pulsed spallation sources. The ISIS TS2 project claims to have significantly reduced neutron scattering instrument background levels by the elimination or reduction of iron shielding in the target-moderator-reflector assembly. An alternative hypothesis, also proposed by ISIS, suggests that this apparent reduction arises from moving beamline shielding away from the neutron guide channels, reducing albedo down the beamlines. In both hypotheses, the background neutrons in question are believed to be generated by photonuclear reactions. If the background neutrons are indeed generated via photonuclear channels, then they are generated in a time-dependent fashion, since most of the high-energy photons capable of inducing photonuclear production are gone within a few microseconds following the proton pulse. To evaluate this e ect, we have enabled photonuclear reactions in a series of studies for the SNS first target station (FTS) taking advantage of its Monte Carlo model. Using a mixture of ENDF/B VII.0 and TENDL-2014 photonuclear cross sections available and the CEM03 physics model within MCNPX 2.6.0 in the simulation, we are able to estimate the impact of photoneutron production on both overall neutron production and delayed neutron production. We find that a significant number of photon-induced neutrons are produced a few milliseconds after the proton pulse, following prompt gamma emission through the capture of neutrons in the slowing-down and thermalization processes. We name these "slowing-down delayed neutrons" to distinguish them from either "activation-delayed neutrons" or "beta-delayed neutrons." The beta-delayed and activation-delayed neutrons were not part of this study, and will be addressed elsewhere. While these other delayed neutron channels result in the time-independent (constant) production of fast neutrons outside of the prompt pulse, the slowing-down delayed neutrons also a ect the shape of the pulses. Although numerically insignificant in most cases, we describe a set of scenarios related to T0-chopper operation in which the slowing-down delayed neutrons may be important.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2017

Design Analysis of SNS Target StationBiological Shielding Monoligh with Proton Power Uprate

This report documents the analysis of the dose rate in the experiment area outside the Spallation Neutron Source (SNS) target station shielding monolith with proton beam energy of 1.3 GeV. The analysis implemented a coupled three dimensional (3D)/two dimensional (2D) approach that used both the Monte Carlo N-Particle Extended (MCNPX) 3D Monte Carlo code and the Discrete Ordinates Transport (DORT) two dimensional deterministic code. The analysis with proton beam energy of 1.3 GeV showed that the dose rate in continuously occupied areas on the lateral surface outside the SNS target station shielding monolith is less than 0.25 mrem/h, which complies with the SNS facility design objective. However, the methods and codes used in this analysis are out of date and unsupported, and the 2D approximation of the target shielding monolith does not accurately represent the geometry. We recommend that this analysis is updated with modern codes and libraries such as ADVANTG or SHIFT. These codes have demonstrated very high efficiency in performing full 3D radiation shielding analyses of similar and even more difficult problems.

42 ENGINEERING↗