Melting Relationships in the System Sodium Aluminum Silicon Oxide-sodium Chloride Water at 1 Kilobar Pressure
Melting relationships in sodium aluminum silicate sodium chloride water system at 1 Kb pressure
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Melting relationships in sodium aluminum silicate sodium chloride water system at 1 Kb pressure
Specific weight changes of nickel-base superalloy B-1900 and B-1900 + 1% Si specimens were tested at 1273 K. B-1900 was losing weight at an increasing rate due to spalling of oxide scale while B-1900 + 1% Si was still gaining weight at low, nearly constant rate. Similar comparison in weight change was observed for specimens tested at 1373 K.
The reaction between SiC and SiO2 has been studied in the temperature range 1400-1600 K. A Knudsen cell in conjunction with a vacuum microbalance and a high-temperature mass spectrometer was used for this study. Two systems were studied - 1:1 SiC (2 wt pct excess carbon) and SiO2; and 1:1:1 SiC, carbon, and SiO2. In both cases the excess carbon forms additional SiC within the Knudsen cell and adjusts to the direct reaction of stoichiometric SiC and SiO2 to form SiO(g) and CO(g) in approximately a 3:1 ratio. These results are interpreted in terms of the Si-C-O stability diagram.
A test program was conducted at the National Aeronautics and Space Administration's Lewis Research Center (LeRC) to evaluate the long term low Earth orbital (LEO) atomic oxygen (AO) durability of a flexible (fiberglass-epoxy composite) batten. The flexible batten is a component used to provide structural rigidity in the photovoltaic array mast on Space Station. The mast is used to support and articulate the photovoltaic array, therefore, the flexible batten must be preloaded for the 15 year lifetime of an array blanket. Development hardware and composite materials were evaluated in ground testing facilities for AO durability and dynamic retraction-deployment cyclic loading representative of expected full life in-space application. The CV1144 silicone (AO protective) coating was determined to provide adequate protection against AO degradation of the composite material and provided fiber containment, thus the structural integrity of the flexible batten was maintained. Both silicone coated and uncoated flexible battens maintained load carrying capabilities. Results of the testing did indicate that the CV1144 silicone protective coating was oxidized by AO reactions to form a brittle glassy (SiO2) skin that formed cracking patterns on all sides of the coated samples. The cracking was observed in samples that were mechanically stressed as well as samples in non-stressed conditions. The oxidized silicon was observed to randomly spall in small localized areas, on the flexible battens that underwent retraction-deployment cycling. Some darkening of the silicon, attributed to vacuum ultraviolet (VUV) radiation, was observed.
The present project builds on the results of research supported under a previous NASA grant to investigate containerless liquid-phase processing of molten ceramic materials. The research used an aero-acoustic levitator in combination with cw CO2 laser beam heating to achieve containerless melting, superheating, undercooling, and solidification of poorly-conducting solids and liquids. Experiments were performed on aluminum oxide, binary aluminum oxide-silicon dioxide materials, and oxide superconductors.
Causes of instability, high threshold voltage, and gamma radiation sensitivity of metal-oxide silicon transistors
Silicon Carbide Nanotubes (SiCNTs) have high mechanical strength and also have many potential functional applications. In this study, SiCNTs were investigated for use in strengthening high temperature silicate and oxide materials for high performance ceramic nanocomposites and environmental barrier coating bond coats. The high · temperature oxidation behavior of the nanotubes was of particular interest. The SiCNTs were synthesized by a direct reactive conversion process of multiwall carbon nanotubes and silicon at high temperature. Thermogravimetric analysis (TGA) was used to study the oxidation kinetics of SiCNTs at temperatures ranging from 800degC to1300degC. The specific oxidation mechanisms were also investigated.
An electrically controlled optical switch uses an electro-optic crystal of the type having at least one set of fast and slow optical axes. The crystal exhibits electric field induced birefringence such that a plane of polarization oriented along a first direction of a light beam passing through the crystal may be switched to a plane of polarization oriented along a second direction. A beam splitting polarizer means is disposed at one end of the crystal and directs a light beam passing through the crystal whose plane of polarization is oriented along the first direction differently from a light beam having a plane of polarization oriented along the second direction. The electro-optic crystal may be chosen from the crystal classes 43m, 42m, and 23. In a preferred embodiment, the electro-optic crystal is a bismuth germanium oxide crystal or a bismuth silicon oxide crystal. In another embodiment of the invention, polarization control optics are provided which transmit substantially all of the incident light to the electro-optic crystal, substantially reducing the insertion loss of the switch.
A self-consistent explanation for the width, strength, and position of spectral features which may be diagnostic of the structure and composition of circumstellar and interstellar silicate grains is presented based on a long series of laboratory experiments using simple oxide analogs. The ratio of the integrated absorption strength of the grains near 10 mu to that near 20 mu is shown to decrease monotonically with increased processing. This ratio may be diagnostic of the relative age of the silicate. The oxidation state of iron in the grains is directly related to both the near-IR grain opacity and enhanced absorption in the UV. The oxidation state of both iron and silicon is directly related to the rate of nucleation, growth, and processing in a circumstellar outflow, as well as to the processing history of the grain after it reaches the interstellar medium. Other diagnostic indicators of the average silicon oxidation state, degree of structural polymerization, and dispersion in the average degree of structural polymerization are discussed.
A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.
Effects of evaporation rate and oxygen pressure on characteristics of silicon oxide films, and angular reflectance of metals determined by optical constants
Shock contraction of silicon oxide powders in converging cylindrical wave, and effects of compression
Analyzing the remains of Space Shuttle Columbia has proven technically beneficial years after the vehicle breakup. This investigation focused on charred deposits on fragments of Columbia overhead windowpanes. Results were unexpected relative to the engineering understanding of material performance in a reentry environment. The TEM analysis demonstrated that the oxides of aluminum and titanium mixed with silicon oxides to preserve a history of thermal conditions to which portions of the vehicle were exposed. The presence of Ti during the beginning of the deposition process, along with the thermodynamic phase precipitation upon cool down, indicate that temperatures well above the Ti melt point were experienced. The stratified observations implied that additional exothermic reaction, expectedly metal combustion of a Ti structure, had to be present for oxide formation. Results are significant for aerospace vehicles where thermal protection system (TPS) breaches cause substructures to be in direct path with the reentry plasma. 1
In January 1998 during, the STS-89 mission, an eight section Russian solar array panel was retrieved after more than ten years exposure to the orbital space environment on the Russian space station Mir. Two darkened handrail samples from the Russian solar array have been evaluated for contamination: a section of a white paint covered rigid handrail and a section of woven fabric over-wrapped around a flexible handhold. The handrail samples were evaluated using optical microscopy (OM), field emission scanning electron microscopy (FESEM) and energy dispersive spectroscopy (EDS). Optical properties were also obtained. Microscopy has shown the discolored areas to have thick layers of contaminant that has crazed and spalled off in regions. Energy dispersive spectroscopy revealed that the brown contaminant is composed of oxidized silicon. No silicon was present on the unexposed fabric over-wrap, and very small amounts were present in the white paint. Therefore, the contaminant layer on both samples is attributed to silicone contamination from other spacecraft materials that have been oxidized by atomic oxygen while in orbit. A significant source of the silicone contamination appears to be from the solar array itself.
Oxidation kinetics of both as-fabricated and coated reaction-bonded silicon nitride (RBSN) were studied at 900 and 1000 C with thermogravimetry. Uncoated RBSN exhibited internal oxidation and parabolic kinetics. An amorphous Si-C-O coating provided the greatest degree of protection to oxygen, with a small linear weight loss observed. Linear weight gains were measured on samples with an amorphous Si-N-C coating. Chemically vapor deposited (CVD) Si3N4 coated RBSN exhibited parabolic kinetics, and the coating cracked severely. A continuous-SiC-fiber-reinforced RBSN composite was also coated with the Si-C-O material, but no substantial oxidation protection was observed.
Instability, high threshold voltage and gamma radiation sensitivity of metal-oxide-silicon transistors
Manganese and silicon effects on oxidation and scale mechanisms of Co-Cr alloys, using thermogravimetric, metallographic and microprobe techniques
SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.