Literature search and radiation study on electronic parts Final report
Literature survey for low level radiation effects on electronic components
Horne, W. E.↗
SEARCH · Engineering Papers
Results for “Radiation effects on electronics”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Radiation Effects of Protons and Electrons in Silicon Diffused-Junction Detectors
Diffused n-on-p silicon particle detectors were irradiated with 1-Mev electrons, and with 31-Mev and 8.2-Mev protons. The detector capacitance was observed to increase with electron irradiation and to decrease with proton irradiation. A physical interpretation is given in terms of defect energy levels known to be introduced in silicon by irradiation. Defect ionization states are taken to be characteristic of the space-charge region, rather than of bulk silicon. The relation to other studies of damage in semiconductor particle detectors is pointed out, considering differences in the types of detector and irradiation used. The significance of these results is discussed for detector applications where the damage threshold is exceeded.
Scott, R. E.↗
Jupiter radiation belt electrons and their effects on sensitive electronics
Data on the electron environment trapped at Jupiter, tests performed to simulate the effects of electrons on Mariner, Jupiter-Saturn 1977 sensitive parts, and test results from those simulations, are summarized.
Divita, E. L.↗
Radiation Exposure of Selected Composites and Thin Films
The effect of electron radiation on selected candidate composite materials was investigated. Radiation damage mechanisms were identified and the coefficient of thermal expansion were measured for each type composite material. It was concluded that the threshold for major physical and mechanical property changes in the polysulfone films and in the polysulfone and epoxy composites is in excess of 1 x 10 to the 9th power rads of electrons. Based upon these data, the 5208 and 934 epoxies and the P1700 polysulfone composites would be acceptable for 5 to 10 year geosynchronous Earth environment missions receiving 1 x 10 to the 9th power rads of electron radiation.
Wayne S Slemp↗
The effects of electron and gamma radiation on epoxy-based materials
Specimens of graphite/epoxy composites and epoxy resins were exposed to electron and gamma radiation, followed by mechanical property and fundamental measurements. Measurement techniques included: scanning electron microscopy, X-ray diffraction analysis, and electron spin resonance spectroscopic analysis. Results indicate little or no change in flexural properties of miniature specimens of a graphite/epoxy composite and no change in failure mode at the fiber-resin interface and in the crystallinity of the fiber and the resin. Some doubt in the observation of stable flexural properties is cast by electron paramagnetic resonance spectra of a relatively large number of radiation-generated radicals. These generally lead to a change in cross-linking and in chain-scissioning which should alter mechanical properties.
Fornes, R. E.↗
The effects of electron and proton radiation on GaSb infrared solar cells
Gallium antimonide (GaSb) infrared solar cells were exposed to 1 MeV electrons and protons up to fluences of 1 times 10(exp 15) cm (-2) and 1 times 10(exp 12) cm (-2) respectively. In between exposures, current voltage and spectral response curves were taken. The GaSb cells were found to degrade slightly less than typical GaAs cells under electron irradiation, and calculations from spectral response curves showed that the damage coefficient for the minority carrier diffusion length was 3.5 times 10(exp 8). The cells degraded faster than GaAs cells under proton irradiation. However, researchers expect the top cell and coverglass to protect the GaSb cell from most damaging protons. Some annealing of proton damage was observed at low temperatures (80 to 160 C).
Gruenbaum, P. E.↗
The effects of electron and proton irradiation on thin film solar cells.
Electron and proton radiation effects on GaAs, CdS and CdTe thin film solar cells noting proton damage, estimates on cell life, etc
PROTON IRRADIATION↗
Radiation Effects Design Handbook. Section 4 - Transistors
Neutron, electron, proton, and electromagnetic radiation effects on transistors - handbook
Drennan, J. E.↗
Spectroscopic analysis of radiation-generated changes in tensile properties of a polyetherimide film
The effects of electron radiation on Ultem, a polyetherimide were studied for doses from 2 x 10 to the 9th power to 6 x 10 to the 9th power rad. Specimens were studied for tensile property testing and for electron paramagnetic resonance and infrared spectroscopic measurements of molecular structure. A Faraday cup design and a method for remote temperature measurement were developed. The spectroscopic data show that radiation caused dehydrogenation of methyl groups, rupture of main-chain ether linkage, and opening of imide rings, all to form radicals and indicate that the so-formed atomic hydrogen attached to phenyl radicals, but not to phenoxyl radicals, which would have formed hydroxyls. The observed decays of the radiation-generated phenoxyl, gem-dimethyl, and carbonyl radicals were interpreted as a combining of the radicals to form crosslinking. This crosslinking is the probable cause of the major reduction in the elongation of the tensile specimens after irradiation. Subsequent classical solubility tests indicate that the irradiation caused massive crosslinking.
Long, E. R., Jr.↗
Effect of 1.33 Mev gamma radiation and 0.5 Mev electrons on the mechanical properties of graphite fiber composites
Epoxy/graphite fiber, polyimide/graphite fiber, and polysulfone/graphite fiber composites were exposed to 1.33 Mev gamma irradiation and 0.5 Mev electron bombardment for varying periods of time. The effects of the irradiation treatments on the breaking stress and Young's modulus were studied by a three point bending test. Effects were small; both electron radiation up to 5000 Mrad and gamma radiation up to 350 Mrad resulted in slight increases in both stress and modulus.
Fornes, R. E.↗
Annual Conference on Nuclear and Space Radiation Effects, 21st, Colorado Springs, CO, July 23-25, 1984, Proceedings
Radiation effects on electronic systems and devices (particularly spacecraft systems) are examined with attention given to such topics as radiation transport, energy deposition, and charge collection; single-event phenomena; basic mechanisms of radiation effects in structures and materials; and EMP phenomena. Also considered are radiation effects in integrated circuits, spacecraft charging and space radiation effects, hardness assurance for devices and systems, and SGEMP/IEMP phenomena.
Winokur, P. S.↗
Radiation effects on silicon solar cells Final report, Dec. 1, 1961 - Dec. 31, 1962
Displacement defects in silicon solar cells by high energy electron irradiation using electron spin resonance, galvanometric, excess carrier lifetime, and infrared absorption measurements
ELECTRON RADIATION↗
Gamma, electron, and proton radiation exposures of P-channel, enhancement, metal oxide semiconductor, field effect transistors
Gamma, electron, and proton radiation exposures of P-channel, enhancement, metal oxide semiconductor, and field effect transistors
FIELD EFFECT TRANSISTOR /FET/↗
Effects of 22 MeV proton and 2.4 MeV electron radiation on boron and aluminum-doped silicon solar cells
Effects of 22 MeV proton and 2.4 MeV electron radiation on boron and aluminum doped silicon solar cells
Ellis, W. E.↗
Ionization rates and power loss from theta- pinches by impurity radiation.
Impurity effects on electron temperature, ionization rates and radiated power losses in theta pinches
PLASMA DECAY↗
Ionizing particle radiations effects and simulation consideration
Proton accelerator, electron accelerators, and beam transport system of NASA space radiation effects laboratory - transient, permanent, surface, and chemical radiation effects
NASA PROGRAM↗
Experimental investigation of simulated space particulate radiation effects on microelectronics.
Proton damage in electronic equipment based on space radiation simulation studies
PROTON DAMAGE↗
Nuclear Science Symposium, 29th, and Symposium on Nuclear Power, 14th, Washington, DC, October 20-22, 1982, Proceedings
High-energy radiation detectors suitable for balloon-borne or space-based radiation event studies are described. The employment of NaI(Tl) scintillator bars for gamma ray detection is outlined, and the development of a fluorescent gated gas-filled scintillation proportional counter is reported. A high throughput nondispersive hard X ray spectrograph with angular resolution for cosmic bursts, transients, and sources has been constructed. Features of a sealed high pressure xenon filled imaging proportional counter with a 30 sq cm sensitive area are explored. Finally, the various radiation effects on electronic circuitry in a space environment are defined, and an MOS dosimeter for assaying the cumulative radiation flux in a spacecraft due to ambient conditions is characterized.
Davis, W. D.↗