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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects

JBS diodes based on 4H-SiC irradiated with electrons and protons are studied. This is carried out by using the methods of capacitance–voltage and current–voltage characteristics. It is concluded that, for both kinds of irradiation, deep centers are formed in the upper half of the band gap of silicon carbide. This leads to a sharp decrease in the concentration of ionized carriers in the conduction band and to an exponential increase in the resistance of the base regions of the structures under study.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Characterization of Radiation Induced Defects Across Scales

The Whole Powder Pattern Modelling (WPPM) approach of diffraction line profile analysis (LPA) was applied for the first time on PuO 2 in order to understand the evolution of the microstructural properties as a function of process conditions. Crystallite size distributions and defect concentrations were determined by WPPM on three different PuO 2 samples - including one with a bimodal distribution and compared to the result of more common LPA analyses used in PuO 2 literature studies (e.g. Scherrer equation, double Voigt method). The conclusion was that a lognormal distribution of spherical crystallites with dislocations most closely represent the microstructure of PuO 2 produced by heating Pu 2 (C 2 O 4 ) 3 (H 2 O) 6 •3H 2 O between 650°C and 850°C. The volume-weighted mean column length (Lvol) parameter obtained from the double Voigt method for the monomodal samples were the same as the Lvol obtained from the WPPM within uncertainty. The two LPA methods did not agree on the Lvol parameters of the bimodal distribution sample with only the WPPM getting values that were consistent with the individual components. The WPPM can potentially provide more insight into future studies of the influences on the microstructure properties of PuO 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2024

Radiation-Induced Defect Formation Kinetics in Inconel–Cu Multimetallic Layered Composites

This study investigates the stability of Inconel–Cu Multimetallic Layered Composites (MMLCs) in nuclear reactor applications using Molecular Dynamics simulations. The focus is on understanding the underlying mechanisms governing the properties of MMLCs for advanced nuclear reactors, specifically, the mechanochemistry of the interface between Inconel and copper alloys. The selection of Inconel–Cu MMLCs is primarily due to copper’s superior thermal conductivity, enhancing heat management within reactors by preventing hotspots and ensuring uniform temperature distribution. This research examines Incoloy 800H and two Inconel variants (718 and 625), assessing their stability at 1000 K after exposure to 10 keV collision cascades up to 0.12 dpa. Notable findings include defect clustering on the {1 2 0} family of planes of Inconel and Cu, with Stacking Faults and Lomer–Cottrell locks on the Inconel side.

Ramesh, Rajesh↗
NASA NTRS1972

Electron spin resonance of ultraviolet radiation induced defects in ZnO thermal control coating pigment.

Electron spin resonance measurements on variously treated zinc oxide powders reveal that the resonance signal at g = 1.956 is due to one electron trapped oxygen ion vacancy level, at a depth of (0.31 plus or minus 0.02) eV below the conduction band. The electrons at this level are delocalized. Schottky barrier influences nearly the entire bulk of the powder sample, and the bending of the bands caused by chemisorbed oxygen puts the vacancy level above the Fermi level almost through the entire bulk.

Mookherji, T.↗
NASA NTRS1982

Radiation-induced defects in SiO2 as determined with XPS

An analytical method based on oxide/substrate intensity ratios is used to deduce the product of the atomic number density and electron mean free path as a function of depth, for the cases of device-quality gate oxides grown on Si substrates and irradiated with zero to 20 eV electrons during in situ X-ray photoelectron spectroscopy. These structures had been thinned stepwise to 25-60 A by means of a wet chemical depth-profiling procedure. Si(3+) species are formed in the Si/SiO2 interface region, and their observation during their relaxation and annihilation is correlated with strained Si-O-Si bonds. The observation of bond of cleavage and bond strain gradients in these samples is used to extend silica devitrification models for the explanation of fixed oxide charge generation and interface states.

Grunthaner, F. J.↗