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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Optical rectification in a strained GaAs{sub 0.9}P{sub 0.1}/GaAs{sub 0.6}P{sub 0.4} quantum dot: Simultaneous effects of electric and magnetic fields

Simultaneous effects of electric field and magnetic field on exciton binding energy as a function of dot radius in a cylindrical GaAs{sub 0.9}P{sub 0.1}/GaAs{sub 0.6}P{sub 0.4} strained quantum dot are investigated. The strain contribution includes the strong built-in electric field induced by the spontaneous and piezoelectric polarizations. Numerical calculations are performed using variational procedure within the single band effective mass approximation. Optical rectification in the GaAs{sub 0.9}P{sub 0.1}/GaAs{sub 0.6}P{sub 0.4} quantum dot is computed in the presence of electric and magnetic fields.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Rectification induced in N{sub 2}{sup AA}-doped armchair graphene nanoribbon device

By using non-equilibrium Green function formalism in combination with density functional theory, we investigated the electronic transport properties of armchair graphene nanoribbon devices in which one lead is undoped and the other is N{sub 2}{sup AA}-doped with two quasi-adjacent substitutional nitrogen atoms incorporating pairs of neighboring carbon atoms in the same sublattice A. Two kinds of N{sub 2}{sup AA}-doped style are considered, for N dopants substitute the center or the edge carbon atoms. Our results show that the rectification behavior with a large rectifying ratio can be found in these devices and the rectifying characteristics can be modulated by changing the width of graphene nanoribbons or the position of the N{sub 2}{sup AA} dopant. The mechanisms are revealed to explain the rectifying behaviors.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Dependence of dynamic magnetization and magneto-transport properties of FeAlSi films with oblique sputtering studied via spin rectification effect

FeAlSi (Sendust) is known to possess excellent soft magnetic properties comparable to traditional soft magnetic alloys such as NiFe (Permalloy), while having a relatively higher resistance for lower eddy current losses. However, their dynamic magnetic and magneto-transport properties are not well-studied. Via the spin rectification effect, we electrically characterize a series of obliquely sputtered FeAlSi films at ferromagnetic resonance. The variations of the anisotropy fields and damping with oblique angle are extracted and discussed. In particular, two-magnon scattering is found to dominate the damping behavior at high oblique angles. An analysis of the results shows large anomalous Hall effect and anisotropic magneto-resistance across all samples, which decreases sharply with increasing oblique incidence.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Angular dependent study on ferromagnetic resonance and spin excitations by spin rectification

We report angular dependent spin rectification spectra which are applied to studying spin excitations in single permalloy stripe. Based on planar Hall effect, those spin excitations generate special resonant dc Hall voltages, which have been characterized as functions of the amplitude and direction of applied magnetic field. Through high angular resolution 2D mappings, the evolutions of different spin excitation can be directly presented, and the dynamic magnetic parameters such as the gyromagnetic ratio, effective exchange field, as well as the quantized numbers of standing spin waves can be accurately determined through fitting the angular evolution of each resonance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Observation of spin rectification in Pt/yttrium iron garnet bilayer

We used the ferromagnetic resonance (FMR) to study the dc voltage generation in Pt 20 nm layer deposited on yttrium iron garnet. Although the main contribution to the FMR voltage comes from the inverse spin Hall effect associated with spin pumping, the spin rectification would also contribute the resonance signal via the “new” magnetoresistance effect in Pt layer. Based on a symmetry consideration, we can separate those two effects through angular dependent resonance amplitude.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Electronic heat current rectification in hybrid superconducting devices

In this work, we review and expand recent theoretical proposals for the realization of electronic thermal diodes based on tunnel-junctions of normal metal and superconducting thin films. Starting from the basic rectifying properties of a single hybrid tunnel junction, we will show how the rectification efficiency can be largely increased by combining multiple junctions in an asymmetric chain of tunnel-coupled islands. We propose three different designs, analyzing their performance and their potential advantages. Besides being relevant from a fundamental physics point of view, this kind of devices might find important technological application as fundamental building blocks in solid-state thermal nanocircuits and in general-purpose cryogenic electronic applications requiring energy management.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Determination of g-tensors of low-symmetry Nd{sup 3+} centers in LiNbO{sub 3} by rectification of angular dependence of electron paramagnetic resonance spectra

Two procedures for facilitation of line tracing and deciphering of complicated spectra of electron paramagnetic resonance (EPR) were developed: a correction of microwave frequencies for every orientation of external magnetic field on the base of known values of g-tensor components for a reference paramagnetic center and followed rectification of measured angular dependences using plots of effective deviation of g{sup 2}-factors of observed lines from effective g{sup 2}-factors of the reference center versus angles or squared cosines of angles describing magnetic field orientations. Their application to EPR spectra of nearly stoichiometric lithium niobate crystals doped with neodymium allowed identifying two axial and six different low-symmetry Nd{sup 3+} centers, to determine all components of their g-tensors, and to propose common divacancy models for a whole family of Nd{sup 3+} centers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Non-local detection of spin dynamics via spin rectification effect in yttrium iron garnet/SiO{sub 2}/NiFe trilayers near simultaneous ferromagnetic resonance

The spin rectification effect (SRE), a phenomenon that generates dc voltages from ac microwave fields incident onto a conducting ferromagnet, has attracted widespread attention due to its high sensitivity to ferromagnetic resonance (FMR) as well as its relevance to spintronics. Here, we report the non-local detection of yttrium iron garnet (YIG) spin dynamics by measuring SRE voltages from an adjacent conducting NiFe layer up to 200 nm thick. In particular, we detect, within the NiFe layer, SRE voltages stemming from magnetostatic surface spin waves (MSSWs) of the adjacent bulk YIG which are excited by a shorted coaxial probe. These non-local SRE voltages within the NiFe layer that originates from YIG MSSWs are present even in 200 nm-thick NiFe films with a 50 nm thick SiO{sub 2} spacer between NiFe and YIG, thus strongly ruling out the mechanism of spin-pumping induced inverse spin Hall effect in NiFe as the source of these voltages. This long-range influence of YIG dynamics is suggested to be mediated by dynamic fields generated from YIG spin precession near YIG/NiFe interface, which interacts with NiFe spins near the simultaneous resonance of both spins, to generate a non-local SRE voltage within the NiFe layer.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt/(Bi 0.9 Sm 0.1 )(Fe 0.97 Hf 0.03 )O 3 /LaNiO 3 heterostructures

In this paper, we studied switchable photovoltaic and photo-diode characteristics of Pt/(Bi 0.9 Sm 0.1 )(Fe 0.97 Hf 0.03 )O 3 / LaNiO 3 (Pt/BSFHO/LNO) heterostructures integrated on Si (100). The directions of photocurrent (J SC ) and rectification are found to be reversibly switchable after applying external poling voltages. In pristine state, metal-ferroelectric-metal capacitor Pt/BSFHO/LNO shows J SC ~ 32 μA/cm 2 and V OC ~ 0.04 V, which increase to maximum value of J SC ~ 303 (-206) μA/cm 2 and V OC ~ -0.32 (0.26) V after upward (downward) poling at ±8 V. Finally, we believe that Schottky barrier modulation by polarization flipping at Pt/BSFHO interface could be a main driving force behind switchable photovoltaic and rectifying diode characteristics of Pt/BSFHO/LNO heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Separating inverse spin Hall voltage and spin rectification voltage by inverting spin injection direction

We develop a method for universally resolving the important issue of separating the inverse spin Hall effect (ISHE) from the spin rectification effect (SRE) signal. This method is based on the consideration that the two effects depend on the spin injection direction: The ISHE is an odd function of the spin injection direction while the SRE is independent on it. Thus, the inversion of the spin injection direction changes the ISHE voltage signal, while the SRE voltage remains. It applies generally to analyzing the different voltage contributions without fitting them to special line shapes. This fast and simple method can be used in a wide frequency range and has the flexibility of sample preparation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Gate-tunable rectification inversion and photovoltaic detection in graphene/WSe{sub 2} heterostructures

We studied electrical transport properties including gate-tunable rectification inversion and polarity inversion, in atomically thin graphene/WSe{sub 2} heterojunctions. Such engrossing characteristics are attributed to the gate tunable mismatch of Fermi levels of graphene and WSe{sub 2}. Also, such atomically thin heterostructure shows excellent performances on photodetection. The responsivity of 66.2 mA W{sup −1} (without bias voltage) and 350 A W{sup −1} (with 1 V bias voltage) can be reached. What is more, the devices show great external quantum efficiency of 800%, high detectivity of 10{sup 13} cm Hz{sup 1/2}/W, and fast response time of 30 μs. Our study reveals that vertical stacking of 2D materials has great potential for multifunctional electronic and optoelectronic device applications in the future.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Three-dimensional reconstruction of THz near-fields from a LiNbO3 optical rectification source

Terahertz (THz) generation by optical rectification in LiNbO3 (LN) is a widely used technique for generating intense THz radiation. The spatiotemporal characterization of THz pulses from these sources is currently limited to far-field methods. While simulations of tilted pulse front THz generation have been published, little work has been done to measure the near-field properties of the THz source. A better understanding of the THz near-field properties will improve optimization of THz generation efficiency, transport, and coupling. We demonstrate a technique for quantitative spatiotemporal characterization of single-cycle strong-field THz pulses with 2-D near-field electro-optic imaging. We have reconstructed the full temporal 3D THz near-field and shown how the phase front can be tailored by controlling the incident pump pulse.

Gabriel, Annika↗
DOE OSTI2019

Super-octave longwave mid-infrared coherent transients produced by optical rectification of few-cycle 25-μm pulses

Femtosecond laser sources and optical frequency combs in the molecular fingerprint region of the electromagnetic spectrum are crucial for a plethora of applications in natural and life sciences. Here we introduce Cr 2+ -based lasers as a convenient means for producing super-octave mid-IR electromagnetic transients via optical rectification (or intra-pulse difference frequency generation, IDFG). We demonstrate that a relatively long, 2.5 μm, central wavelength of a few-cycle Cr 2+ :ZnS driving source (20 fs pulse duration, 6 W average power, 78 MHz repetition rate) enabled the use of highly nonlinear ZnGeP 2 crystal for IDFG with exceptionally high conversion efficiency (>3%) and output power of 0.15 W, with the spectral span of 5.8–12.5 μm. Even broader spectrum was achieved in GaSe crystal: 4.3–16.6 μm for type I and 5.8–17.6 μm for type II phase matching. The results highlight the potential of this architecture for ultrafast spectroscopy and generation of broadband frequency combs in the longwave infrared.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗