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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Linewidth narrowing in self-injection locked lasers: Effects of quantum confinement

This paper explores the impact of gain medium on linewidth narrowing in integrated self-injection locked III–V/SiN lasers, theoretically and experimentally. We focus on the effects of carrier densities of states in zero- and two-dimensional structures due to quantum-dot and quantum-well confinement. The theoretical approach includes (a) multimode laser interaction to treat mode competition and wave mixing, (b) quantum-optical contributions from spontaneous emission, and (c) composite laser/free-space eigenmodes to describe outcoupling and coupling among components within an extended cavity. For single-cavity lasers, such as distributed feedback lasers, the model reproduces the experimentally observed better linewidth performance of quantum-dot active regions over quantum-well ones. When applied to integrated III–V/SiN lasers, our analysis indicates Hz-level linewidth performance for both quantum-dot and quantum-well gain media due to overcoming the difference in carrier-induced refractive index by incorporating a high-Q SiN passive resonator. Trade-offs are also explored between linewidth, output power, and threshold current.

Cavity quantum electrodynamics↗
DOE OSTI2011

Optical properties of quantum-confined heterostructures based on GaP{sub x}N{sub y}As{sub 1-x-y} alloys

The results of calculations of the band gap in GaP{sub x}N{sub y}As{sub 1-x-y} alloys and the estimated parameter of hybridization of the conduction band in GaP and the localized level of nitrogen are reported. The optical properties of quantum-confined heterostructures based on GaP{sub x}N{sub y}As{sub 1-x-y} alloys synthesized on the GaP (100) substrate surface are studied by photoluminescence measurements in the temperature range of 15-300 K. The heterostructures consist of GaP{sub 0.814}N{sub 0.006}As{sub 0.18} quantum wells separated by GaP barrier layers. The well width and the barrier thickness are 5 nm. Heterostructures with different numbers of periods are considered. On optical excitation of the structures, an intense photoluminescence line is observed in the spectral range 620-650 nm. The photoluminescence spectra of the GaP{sub 0.814}N{sub 0.006}As{sub 0.18}/GaP quantum wells are profoundly broadened because of the inhomogeneity of the quaternary alloy in composition. It is established that the increase in the number of quantum well layers from 10 to 25 does not results in degradation of the photoluminescence properties of the heterostructures. The results of the study support the view that it is possible to produce efficient optoelectronic devices on the basis of GaP{sub x}N{sub y}As{sub 1-x-y} alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus

We report measurements of the infrared optical response of thin black phosphorus under field-effect modulation. Here, we interpret the observed spectral changes as a combination of an ambipolar Burstein-Moss (BM) shift of the absorption edge due to band-filling under gate control, and a quantum confined Franz-Keldysh (QCFK) effect, phenomena that have been proposed theoretically to occur for black phosphorus under an applied electric field. Distinct optical responses are observed depending on the flake thickness and starting carrier concentration. Transmission extinction modulation amplitudes of more than two percent are observed, suggesting the potential for use of black phosphorus as an active material in mid-infrared optoelectronic modulator applications.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Influence of the nanoparticles agglomeration state in the quantum-confinement effects: Experimental evidences

The agglomeration state facilitates particle-particle interaction which produces important effects in the phonon confinement effects at the nanoscale. A partial phonon transmission between close nanoparticles yields a lower momentum conservation relaxation than in a single isolated nanoparticle. It means a larger red shift and broadening of the Raman modes than the expected ones for Raman quantum confinement effects. This particle-particle interaction can drive to error when Raman responses are used to estimate the size of the nanoscaled materials. In this work different corrections are suggested to overtake this source of error.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Interplay between quantum confinement and surface effects in thickness selective stability of thin Ag and Eu films

Using first-principles calculations, we show that both face-centered cubic (fcc) Ag (1 1 0) ultrathin films and body-centered cubic (bcc) Eu(1 1 0) ultrathin films exhibit thickness selective stability. Furthermore, the origin of such thickness selection is different. While the thickness selective stability in fcc Ag(1 1 0) films is mainly due to the well-known quantum well states ascribed to the quantum confinement effects in free-electron-like metal films, the thickness selection in bcc Eu(1 1 0) films is more complex and also strongly correlated with the occupation of the surface and surface resonance states.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Size control, quantum confinement, and oxidation kinetics of silicon nanocrystals synthesized at a high rate by expanding thermal plasma

The growth mechanism of silicon nanocrystals (Si NCs) synthesized at a high rate by means of expanding thermal plasma chemical vapor deposition technique are studied in this letter. A bimodal Gaussian size distribution is revealed from the high-resolution transmission electron microscopy images, and routes to reduce the unwanted large Si NCs are discussed. Photoluminescence and Raman spectroscopies are employed to study the size-dependent quantum confinement effect, from which the average diameters of the small Si NCs are determined. The surface oxidation kinetics of Si NCs are studied using Fourier transform infrared spectroscopy and the importance of post-deposition passivation treatments of hydrogenated crystalline silicon surfaces are demonstrated.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Bandgap and Carrier Transport Engineering of Quantum Confined Mixed Phase Nanocrystalline/Amorphous Silicon

Mixed phase nanocrystalline/amorphous-silicon (nc/a-Si:H) thin films with band-gap higher than bulk silicon are prepared by depositing silicon nanoparticles (SiNPs), prepared in a separate deposition zone, and hydrogenated amorphous silicon (a-Si:H), simultaneously. Since the two deposition phases are well decoupled, optimized parameters for each component can apply to the growth process. Photoluminescence spectroscopy (PL) shows that the embedded SiNPs are small enough to exhibit quantum confinement effects. The low temperature PL measurements on the mixed phase reveal a dominant emission feature, which is associated with SiNPs surrounded by a-Si:H. In addition, we compare time dependent low temperature PL measurements for both a-Si:H and mixed phase material under intensive laser exposure for various times up to two hours. The PL intensity of a-Si:H with embedded SiNPs degrades much less than that of pure a-Si:H. We propose this improvement of photostability occurs because carriers generated in the a-Si:H matrix quickly transfer into SiNPs and recombine there instead of recombining in a-Si:H and creating defect states (Staebler-Wronski Effect).

14 SOLAR ENERGY↗
DOE OSTI2018

Emerging nanofabrication and quantum confinement techniques for 2D materials beyond graphene

Abstract Recent advances in growth techniques have enabled the synthesis of high-quality large area films of 2D materials beyond graphene. As a result, nanofabrication methods must be developed for high-resolution and precise processing of these atomically thin materials. These developments are critical both for the integration of 2D materials in complex, integrated circuitry, as well as the creation of sub-wavelength and quantum-confined nanostructures and devices which allow the study of novel physical phenomena. In this review, we summarize recent advances in post-synthesis nanopatterning and nanofabrication techniques of 2D materials which include (1) etching techniques, (2) atomic modification, and (3) emerging nanopatterning techniques. We detail novel phenomena and devices which have been enabled by the recent advancement in nanofabrication techniques and comment on future outlook of 2D materials beyond graphene.

Stanford, Michael G.↗
DOE OSTI2013

Quantum confinement induced magnetism in LaNiO3-LaMnO3 superlattices

The emergence of magnetic reconstructions at the interfaces of oxide heterostructures are often explained via subtle modifications in the electronic densities, exchange couplings, or strain. Here, an additional possible route for induced magnetism is studied in the context of the (LaNiO3)n/(LaMnO3)n superlattices using a hybrid tightbinding model. In the LaNiO3 region, the induced magnetizations decouple from the intensity of charge leakage from Mn to Ni, but originate from the spin-filtered quantum confinement present in these nanostructures. In general, the induced magnetization is the largest for the (111)-stacking and the weakest for the (001)-stacking superlattices; results compatible with the exchange bias effects reported byGibert et al. [Nat.Mater. 11, 195 (2012)].

Dong, Shuai↗
DOE OSTI2014

Nanocrystalline-Si-dot multi-layers fabrication by chemical vapor deposition with H-plasma surface treatment and evaluation of structure and quantum confinement effects

100-nm-thick nanocrystalline silicon (nano-Si)-dot multi-layers on a Si substrate were fabricated by the sequential repetition of H-plasma surface treatment, chemical vapor deposition, and surface oxidation, for over 120 times. The diameter of the nano-Si dots was 5–6 nm, as confirmed by both the transmission electron microscopy and X-ray diffraction analysis. The annealing process was important to improve the crystallinity of the nano-Si dot. We investigated quantum confinement effects by Raman spectroscopy and photoluminescence (PL) measurements. Based on the experimental results, we simulated the Raman spectrum using a phenomenological model. Consequently, the strain induced in the nano-Si dots was estimated by comparing the experimental and simulated results. Taking the estimated strain value into consideration, the band gap modulation was measured, and the diameter of the nano-Si dots was calculated to be 5.6 nm by using PL. The relaxation of the q ∼ 0 selection rule model for the nano-Si dots is believed to be important to explain both the phenomena of peak broadening on the low-wavenumber side observed in Raman spectra and the blue shift observed in PL measurements.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Interplay between strain, quantum confinement, and ferromagnetism in strained ferromagnetic semiconductor (In,Fe)As thin films

We systematically investigated the influence of strain on the electronic structure and ferromagnetism of (In,Fe)As thin films. It is found that while the shift of the critical point energies of compressive-strained (In,Fe)As layers grown on (In{sub 1−y},Ga{sub y})As (y = 0.05, 0.1) buffer layers can be explained by the hydrostatic deformation effect (HDE) alone, those of tensile-strained (In,Fe)As layers grown on (Ga{sub 1−z},Al{sub z})Sb (z = 0, 0.5, 1) buffer layers can be explained by the combination of HDE and the quantum confinement effect (QCE). The Curie temperature T{sub C} of the (In,Fe)As layers strongly depends on the strain, and shows a maximum for the (In,Fe)As layer grown on a GaSb buffer layer. The strain dependence of T{sub C} can be explained by the s-d exchange mechanism taking into account HDE and QCE.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Efficient blue light-emitting diodes based on quantum-confined bromide perovskite nanostructures

The emergence of inorganic–organic hybrid perovskites, a unique class of solution-processable crystalline semiconductors, provides new opportunities for large-area, low-cost and colour-saturated light-emitting diodes (LEDs) ideal for display and solid-state lighting applications1. However, the performance of blue perovskite LEDs (PeLEDs) is far inferior to that of their near-infrared, red and green counterparts, strongly limiting the practicality of the PeLED technology. Here, we demonstrate blue PeLEDs emitting at 483 nm with colour coordinates of (0.094, 0.184) and operating with a peak external quantum efficiency of up to 9.5% at a luminance of 54 cd m –2 . The devices have a T50 lifetime of 250 s for an initial brightness of 100 cd m –2 . The efficient blue electroluminescence originates from a structure of quantum-confined perovskite nanoparticles embedded within quasi-two-dimensional phases with higher bandgaps, prepared by an antisolvent processing scheme. Our work paves the way towards high-performance PeLEDs in the blue region.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Band-gap engineering of functional perovskites through quantum confinement and tunneling

An optimal band gap that provides for a high solar-to-fuel energy conversion efficiency is one of the key factors to achieve sustainability. We investigate computationally the band gaps and optical spectra of functional perovskites composed of layers of the two cubic perovskite semiconductors BaSnO 3 and BaTaO 2 N. Starting from an indirect gap of around 3.3 eV for BaSnO 3 and a direct gap of 1.8 eV for BaTaO 2 N, different layerings can be used to design a direct gap of the functional perovskite between 2.3 and 1.2 eV . The variations of the band gap can be understood in terms of quantum confinement and tunneling. Furthermore, we calculate the light absorption of the different heterostructures and demonstrate a large sensitivity to the detailed layering.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Strongly Quantum Confined Colloidal Cesium Tin Iodide Perovskite Nanoplates: Lessons for Reducing Defect Density and Improving Stability

We report that within the last several years, metal halide perovskites such as methylammonium lead iodide, CH 3 NH 3 PbI 3 , have come to the forefront of scientific investigation as defect-tolerant, solution-processable semiconductors that exhibit excellent optoelectronic properties. The vast majority of study has focused on Pb-based perovskites, which have limited applications because of their inherent toxicity. To enable the broad application of these materials, the properties of lead-free halide perovskites must be explored. Here, two-dimensional, lead-free cesium tin iodide, (CsSnI 3 ), perovskite nanoplates have been synthesized and characterized for the first time. These CsSnI 3 nanoplates exhibit thicknesses of less than 4 nm and exhibit significant quantum confinement with photoluminescence at 1.59 eV compared to 1.3 eV in the bulk. Ab initio calculations employing the generalized gradient approximation of Perdew-Burke-Ernzerhof elucidate that although the dominant intrinsic defects in CsSnI 3 do not introduce deep levels inside the band gap, their concentration can be quite high. These simulations also highlight that synthesizing and processing CsSnI 3 in Sn-rich conditions can reduce defect density and increase stability, which matches insights gained experimentally. Lastly, this improvement in the understanding of CsSnI 3 represents a step toward the broader challenge of building a deeper understanding of Sn-based halide perovskites and developing design principles that will lead to their successful application in optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2014

O-band quantum-confined Stark effect optical modulator from Ge/Si{sub 0.15}Ge{sub 0.85} quantum wells by well thickness tuning

We report an O-band optical modulator from a Ge/Si{sub 0.15}Ge{sub 0.85} multiple quantum well (MQW). Strong O-band optical modulation in devices commonly operating within E-band wavelength range can be achieved by simply decreasing the quantum well thickness. Both spectral photocurrent and optical transmission studies are performed to evaluate material characteristics and device performance from a surface-illuminated diode and a waveguide modulator, respectively. These results demonstrate the potential of using Ge/Si{sub 0.15}Ge{sub 0.85} MQWs for the realization of future on-chip wavelength-division multiplexing systems with optical modulators operating at different wavelengths over a wide spectral range.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Quantum coherence confined

Quantum coherence refers to the ability of a quantum state to maintain its entanglement and superposition in the face of interactions and the effects of thermalization. It is indispensable for quantum technologies — be they in sensing, transduction or computing — permitting them, in principle, to outperform their classical counterparts. To realize the promise of these technologies, one key challenge is to identify quantum states within systems that are quantum coherent. Now, writing in Nature Physics, Wen Lin Tan and collaborators report that they have used a system of trapped rare-earth-ion arrays to demonstrate a class of disorder-free quantum states that have enhanced coherence and experience anomalous patterns of thermalization1. Here, the pivotal notion behind their observations is the confinement of fundamental excitations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Enabling multiple intercavity polariton coherences by adding quantum confinement to cavity molecular polaritons

In this study, the “particle in a box” idea, which was broadly developed in semiconductor quantum dot research, was extended into mid-infrared (IR) cavity modes by applying lateral confinement in an optical cavity. The discrete cavity modes hybridized with molecular vibrational modes, resulting in a quartet of polariton states that can support multiple coherence states in the IR regime. We applied tailored pump pulse sequences to selectively prepare these coherences and verified the multi-coherence existence. The simulation based on Lindblad equation showed that because the quartet of polariton states resided in the same cavity, they were specifically robust toward decoherence caused by fluctuations in space. The multiple robust coherences paved the way for entangled states and coherent interactions between cavity polaritons, which would be critical for advancing polariton-based quantum information technology.

2D IR↗