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NASA NTRS1989

The 5-kW arcjet power electronics

The initial design and evaluation of a 5 kW arcjet power electronics breadboard which as been integrated with a modified 1 kW design laboratory arcjet is presented. A single stage, 5 kW full bridge, pulse width modulated (PWM), power converter was developed which was phase shift regulated. The converter used metal oxide semiconductor field effect transistor (MOSFET) power switches and incorporated current mode control and an integral arcjet pulse ignition circuit. The unoptimized power efficiency was 93.5 and 93.9 percent at 5 kW and 50A output at input voltages of 130 and 150V, respectively. Line and load current regulation at 50A output was within one percent. The converter provided up to 6.6 kW to the arcjet with simulated ammonia used as a propellant.

Gruber, R. P.↗

NASA NTRS1989

5-kW arcjet power electronics

Gruber, R. P.↗

NASA NTRS1992

Improving Current Balance In Parallel MOSFET's

Simple circuit makes currents more nearly equal. Addition of diodes and adjustable-tap resistor increases operating range over which drain currents in two unmatched power MOSFET's brought more nearly into balance.

Niedra, Janis M.↗

NASA NTRS2012

Prognostics of Power Electronics, Methods and Validation Experiments

Abstract Failure of electronic devices is a concern for future electric aircrafts that will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. As a result, investigation of precursors to failure in electronics and prediction of remaining life of electronic components is of key importance. DC-DC power converters are power electronics systems employed typically as sourcing elements for avionics equipment. Current research efforts in prognostics for these power systems focuses on the identification of failure mechanisms and the development of accelerated aging methodologies and systems to accelerate the aging process of test devices, while continuously measuring key electrical and thermal parameters. Preliminary model-based prognostics algorithms have been developed making use of empirical degradation models and physics-inspired degradation model with focus on key components like electrolytic capacitors and power MOSFETs (metal-oxide-semiconductor-field-effect-transistor). This paper presents current results on the development of validation methods for prognostics algorithms of power electrolytic capacitors. Particularly, in the use of accelerated aging systems for algorithm validation. Validation of prognostics algorithms present difficulties in practice due to the lack of run-to-failure experiments in deployed systems. By using accelerated experiments, we circumvent this problem in order to define initial validation activities.

Kulkarni, Chetan S.↗

NASA NTRS1995

Low-temperature operation of a Buck DC/DC converter

Low-temperature (77 K) operation of a 42/28 V, 175 W, 50 kHz PWM Buck DC/DC converter designed with commercially available components is reported. Overall, the converter losses decreased at 77 K compared to room temperature operation. A full-load efficiency of 97 percent was recorded at liquid-nitrogen temperature, compared to 95.8 percent at room temperature. Power MOSFET operation improved significantly where as the output rectifier operation deteriorated at low-temperature. The performance of the output filter inductor and capacitor did not change significantly at 77 K compared to room temperature performance. It is possible to achieve high-density and high efficiency power conversion at low-temperatures due to improved electronic, electrical and thermal properties of materials.

Ray, Biswajit↗

NASA NTRS2017

Taking SiC Power Devices to the Final Frontier: Addressing Challenges of the Space Radiation Environment

Silicon carbide power device technology has the potential to enable a new generation of aerospace power systems that demand high efficiency, rapid switching, and reduced mass and volume in order to expand space-based capabilities. For this potential to be realized, SiC devices must be capable of withstanding the harsh space radiation environment. Commercial SiC components exhibit high tolerance to total ionizing dose but to date, have not performed well under exposure to heavy ion radiation representative of the on-orbit galactic cosmic rays. Insertion of SiC power device technology into space applications to achieve breakthrough performance gains will require intentional development of components hardened to the effects of these highly-energetic heavy ions. This work presents heavy-ion test data obtained by the authors over the past several years for discrete SiC power MOSFETs, JFETs, and diodes in order to increase the body of knowledge and understanding that will facilitate hardening of this technology to space radiation effects. Specifically, heavy-ion irradiation data taken under different bias, temperature, and ion beam conditions is presented for devices from different manufacturers, and the emerging patterns discussed.

Power semiconductor devices↗

NASA NTRS1990

A linearly controlled direct-current power source for high-current inductive loads in a magnetic suspension wind tunnel

The NASA Langley 6 inch magnetic suspension and balance system (MSBS) requires an independently controlled bidirectional DC power source for each of six positioning electromagnets. These electromagnets provide five-degree-of-freedom control over a suspended aerodynamic test model. Existing power equipment, which employs resistance coupled thyratron controlled rectifiers as well as AC to DC motor generator converters, is obsolete, inefficient, and unreliable. A replacement six phase bidirectional controlled bridge rectifier is proposed, which employs power MOSFET switches sequenced by hybrid analog/digital circuits. Full load efficiency is 80 percent compared to 25 percent for the resistance coupled thyratron system. Current feedback provides high control linearity, adjustable current limiting, and current overload protection. A quenching circuit suppresses inductive voltage impulses. It is shown that 20 kHz interference from positioning magnet power into MSBS electromagnetic model position sensors results predominantly from capacitively coupled electric fields. Hence, proper shielding and grounding techniques are necessary. Inductively coupled magnetic interference is negligible.

Tripp, John S.↗

NASA NTRS1991

A solid-state controllable power supply for a magnetic suspension wind tunnel

The NASA Langley 6-inch Magnetic Suspension and Balance System (6-in. MSBS) requires an independently controlled bidirectional dc power source for each of six positioning electromagnets. These electromagnets provide five-degree-of-freedom control over a suspended aerodynamic test model. Existing power equipment, which employs resistance-coupled thyratron-controlled rectifiers as well as ac to dc motor-generator converters, is obsolete, inefficient, and unreliable. A replacement six-phase bidirectional controlled bridge rectifier is proposed, which employs power MOSFET switches sequenced by hybrid analog/digital circuits. Full-load efficiency is 80 percent compared with 25 percent for the resistance-coupled thyratron system. Current feedback provides high control linearity, adjustable current limiting, and current overload protection. A quenching circuit suppresses inductive voltage impulses. It is shown that 20-kHz interference from positioning magnet power into MSBS electromagnetic model position sensors results predominantly from capacitively coupled electric fields. Hence, proper shielding and grounding techniques are necessary. Inductively coupled magnetic interference is negligible.

Daniels, Taumi S.↗

NASA NTRS2017

Observation of Single-Event Burnout During Inductive Switching

1A power MOSFET demonstrated destructive Single-Event Effect (SEE) during ion irradiation in a switching circuit. Further investigation showed that the inductive load causing a spike in the drain-to-source voltage (VDS) that exceeded the manufacturer’s rating for several nanoseconds was enough to allow SEB. These results indicate that SEB may occur in a very short window and flyback is critical for disciplined power supply design.

Menke, Rob↗

NASA NTRS1998

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗

NASA NTRS2006

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Neudeck, Philip G.↗

NASA NTRS1983

Portable I/V-Curve Tester

Electronic load circuit for displaying current/voltage characteristic curves of power sources uses low-cost low-power CMOS operational amplifiers to control load current flowing through power MOSFET Q2 and main load transistor Q3. Thermal cutoff device turns off transistor Q3 in case of overload. To maximize battery life, battery is connected via "push-to-read" momentary-contact pushbutton switch.

Cole, S. W.↗

NASA NTRS1982

Electronic Load Tests High-Voltage Solar Arrays

Adjustable electronic load in solar-cell-array test instrument uses ten power MOSFET's and eight resistors. Two gate-control voltages adjusting load are derived from single, manually-operated, ganged potentiometer control. Third adjustable resistor adjusts relative turn-on points of two groups of transistors.

Miller, E. L.↗

NASA NTRS1991

Development of a ninety string solar array simulator

A power source was developed to support testing for the Space Station Freedom Power Management and Distribution (PMAD) DC Testbed. The intent was to simulate as closely as possible the steady-state and transient responses of a solar array. Several breadboards and one thermal prototype were built and tested. Responses were successfully verified and improved upon during successive breadboards. The completed 90-string simulator consists of four power MOSFETs, four 25 watt source resistors, and four 250 watt drain source bypass resistors per string, in addition to the control circuitry.

Vasek, Thomas E.↗

NASA NTRS1991

Development of a ninety string solar array simulator

A power source was developed to support testing for the Space Station Freedom Power Management and Distribution (PMAD) DC Testbed. The intent was to simulate as closely as possible the steady-state and transient responses of a solar array. Several breadboards and one thermal prototype were built and tested. Responses were successfully verified and improved upon during successive breadboards. The completed 90-string simulator consists of four power MOSFETs, four 25-watt source resistors, and four 250-watt drain source bypass resistors per string, in addition to the control circuitry.

Vasek, Thomas E.↗

NASA NTRS2001

Observations on ion track structure in semiconductors : a phenomenological study

An ion track structure model at the nanometer scale is presented. The model is based on electrostatic principles and is supported by observed experimental results conducted on power MOSFETs. The model predicts the existence of a transient induced electric field following the passage of an energetic heavy ion. There are two segments to the field (a radial and an axial component). It is the interaction of this transient electric field with the local environment that can trigger a catastrophic failure.

SEGR↗

NASA NTRS1991

Passively forced current sharing among transistors

This application concerns a simple passive circuit that improves current balance in paralleled power MOSFETs that are not precisely matched and that are operated in their active region from a common gate drive. A nonlinear circuit consisting of diodes and resistors generates a differential gate potential required to correct for unbalance while maintaining low losses over a range of current.

Niedra, Janis M.↗

NASA NTRS2007

Assessment of SOI Devices and Circuits at Extreme Temperatures

Electronics designed for use in future NASA space exploration missions are expected to encounter extreme temperatures and wide thermal swings. Such missions include planetary surface exploration, bases, rovers, landers, orbiters, and satellites. Electronics designed for such applications must, therefore, be able to withstand exposure to extreme temperatures and to perform properly for the duration of mission. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical devices, circuits, and systems suitable for applications in deep space exploration missions and aerospace environment. Silicon-On-Insulator (SOI) technology has been under active consideration in the electronics industry for many years due to the advantages that it can provide in integrated circuit (IC) chips and computer processors. Faster switching, less power, radiationtolerance, reduced leakage, and high temp-erature capability are some of the benefits that are offered by using SOI-based devices. A few SOI circuits are available commercially. However, there is a noticeable interest in SOI technology for different applications. Very little data, however, exist on the performance of such circuits under cryogenic temperatures. In this work, the performance of SOI integrated circuits, evaluated under low temperature and thermal cycling, are reported. In particular, three examples of SOI circuits that have been tested for operation at low at temperatures are given. These circuits are SOI operational amplifiers, timers and power MOSFET drivers. The investigations were carried out to establish a baseline on the functionality and to determine suitability of these circuits for use in space exploration missions at cryogenic temperatures. The findings are useful to mission planners and circuit designers so that proper selection of electronic parts can be made, and risk assessment can be established for such circuits for use in space missions.

Elbuluk, Malik↗