Remarkable photocurrent in heterojunctions of n-La{sub 0.9}Hf{sub 0.1}MnO{sub 3}/i-SrTiO{sub 3}/p-Si at room temperature
Controllable manipulation for electrical transport in manganite-based heterojunctions have been desired and studied all the time due to their promising applications in electronic and spintronic devices. We report heterojunctions composed by n-type La{sub 0.9}Hf{sub 0.1}MnO{sub 3} and p-type Si with a SrTiO{sub 3} interlayer. The junctions reveal the formation of n-i-p junction in a wide temperature range of 20–300 K. Under illumination of 630 nm light, remarkable photocurrent has been observed. The photosensitivity (I{sub S}), defined as the ratio of photocurrent to dark current, reaches over 1200% under −3 V bias and illumination of red light with 10 mW cm{sup −2} at room temperature. Even light power density is as low as 0.2 mW cm{sup −2}, I{sub S} is still over 200% under −1.5 V bias. The injection of photo-carriers could be responsible for the observed phenomenon. Such manipulative features by light illumination and bias should be of great potential for functional light sensors.