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At least 91 records · Page 5

Remarkable photocurrent in heterojunctions of n-La{sub 0.9}Hf{sub 0.1}MnO{sub 3}/i-SrTiO{sub 3}/p-Si at room temperature

Controllable manipulation for electrical transport in manganite-based heterojunctions have been desired and studied all the time due to their promising applications in electronic and spintronic devices. We report heterojunctions composed by n-type La{sub 0.9}Hf{sub 0.1}MnO{sub 3} and p-type Si with a SrTiO{sub 3} interlayer. The junctions reveal the formation of n-i-p junction in a wide temperature range of 20–300 K. Under illumination of 630 nm light, remarkable photocurrent has been observed. The photosensitivity (I{sub S}), defined as the ratio of photocurrent to dark current, reaches over 1200% under −3 V bias and illumination of red light with 10 mW cm{sup −2} at room temperature. Even light power density is as low as 0.2 mW cm{sup −2}, I{sub S} is still over 200% under −1.5 V bias. The injection of photo-carriers could be responsible for the observed phenomenon. Such manipulative features by light illumination and bias should be of great potential for functional light sensors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Characterization of the photocurrents generated by the laser of atomic force microscopes

The conductive atomic force microscope (CAFM) has become an essential tool for the nanoscale electronic characterization of many materials and devices. When studying photoactive samples, the laser used by the CAFM to detect the deflection of the cantilever can generate photocurrents that perturb the current signals collected, leading to unreliable characterization. In metal-coated semiconductor samples, this problem is further aggravated, and large currents above the nanometer range can be observed even without the application of any bias. Here we present the first characterization of the photocurrents introduced by the laser of the CAFM, and we quantify the amount of light arriving to the surface of the sample. The mechanisms for current collection when placing the CAFM tip on metal-coated photoactive samples are also analyzed in-depth. Finally, we successfully avoided the laser-induced perturbations using a two pass technique: the first scan collects the topography (laser ON) and the second collects the current (laser OFF). We also demonstrate that CAFMs without a laser (using a tuning fork for detecting the deflection of the tip) do not have this problem.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

State hybridization shapes the photocurrent in triple quantum dot nanojunctions

We investigated a prototype of a quantum dot based photodetector made of a dot absorber interconnected with two lateral dot filters in contact with semiconducting leads. Using the nonequilibrium Green's function technique, we found that there are two opposite evolutions of the photocurrent in the vicinity of the tunnel resonance for such a kind of nanodevice. This evolution depends on where the strongest hybridization of states happens, and hence still reveals a quantum effect. If the filter states hybridize more with the absorber states than the ones of the leads, the photocurrent shows a maximum at the tunnel resonance, while it is minimized in the opposite case.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Probing drift velocity dispersion in MAPbI 3 photovoltaic cells with nonlinear photocurrent spectroscopy

Conventional time-of-flight (TOF) measurements yield charge carrier mobilities in photovoltaic cells with time resolution limited by the RC time constant of the device, which is on the order of 0.1–1 µs for the systems targeted in the present work. We have recently developed an alternate TOF method, termed nonlinear photocurrent spectroscopy (NLPC), in which carrier drift velocities are determined with picosecond time resolution by applying a pair of laser pulses to a device with an experimentally controlled delay time. In this technique, carriers photoexcited by the first laser pulse are “probed” by way of recombination processes involving carriers associated with the second laser pulse. Here, we report NLPC measurements conducted with a simplified experimental apparatus in which synchronized 40 ps diode lasers enable delay times up to 100 µs at 5 kHz repetition rates. Carrier mobilities of ∼0.025 cm 2 /V/s are determined for MAPbI 3 photovoltaic cells with active layer thicknesses of 240 and 460 nm using this instrument. Here, our experiments and model calculations suggest that the nonlinear response of the photocurrent weakens as the carrier densities photoexcited by the first laser pulse trap and broaden while traversing the active layer of a device. Based on this aspect of the signal generation mechanism, experiments conducted with co-propagating and counter-propagating laser beam geometries are leveraged to determine a 60 nm length scale of drift velocity dispersion in MAPbI 3 films. Contributions from localized states induced by thermal fluctuations are consistent with drift velocity dispersion on this length scale.

14 SOLAR ENERGY↗

Helicity-dependent photocurrent in the resistive Ag/Pd films excited by IR laser radiation

It is shown that in resistive Ag/Pd films manufactured according to the thick-film technology, in the case of oblique incidence of laser radiation of nanosecond duration at a wavelengths of 1350 – 2100 nm, a photon-drag photocurrent arises in the direction perpendicular to the plane of incidence, dependent on the ellipticity and sign of circular polarisation of incident radiation. This photocurrent consists of the so-called circular and linear contributions, which are, respectively, dependent on and independent of the sign of circular polarisation. In this wavelength range, the amplitude of the circular contribution is many times greater than that of the linear contribution. The results allow the use of resistive Ag/Pd films for the development and manufacture of innovative sensors of the sign of circular polarisation of pulsed laser radiation, operating in a wide spectral range. (interaction of laser radiation with matter. laser plasma)

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Radiative Recombination, Carrier Capture at Traps, and Photocurrent Relaxation in PbSnTe:In with a Composition Close to Band Inversion

Based on the notions that PbSnTe:In is a direct-gap semiconductor, the radiative-recombination lifetime is calculated, and the photocurrent relaxation and dependences of the instantaneous electron and hole lifetime are calculated under the assumption that PbSnTe:In is a disordered structure containing capture centers. These calculations explain such experimentally observed peculiarities of PbSnTe:In as a high photosensitivity in a wide wavelength range, pinning of the Fermi level, and long-term photocurrent relaxation. Calculations are also compared with experimental data and the possible parameters of photodetectors are evaluated.

36 MATERIALS SCIENCE↗

Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures

The electric-field behavior of resonance features of the photoelectric characteristics of InAs/GaAs heterostructures is investigated. The emission of carriers excited by light from InAs quantum dots into the GaAs matrix is ​​discussed. It is shown that at the temperature of liquid nitrogen the photocurrent in a strong transverse electric field is only determined by the effect of electron tunneling through a barrier formed at the quantum-dot interfaces. Comparison of the experimental curves with the results obtained using a quasiclassical expression for the tunneling-current component and subsequent analysis of the potential structure made it possible to refine the parameters of the heterostructure under study. The contribution of the resonance component caused by possible electron tunneling through the barrier with the participation of the local defect states to the total tunneling current is analyzed. The influence of the level of excitation of the system on the photocurrent flowing through the InAs/GaAs heterojunction is theoretically studied.

36 MATERIALS SCIENCE↗

Effect of the Hydrogen Concentration on the Pd/n-InP Schottky Diode Photocurrent

The variation rate of the short-circuit photocurrent of Pd/n-InP Schottky diodes is studied as a function of the presence of hydrogen in a gas mixture with H{sub 2} concentrations of 1–100 vol %. It is shown that upon the simultaneous exposure of the Schottky diode to a hydrogen-containing gas mixture and to light (λ = 0.9 μm), the hydrogen concentration in the gas mixture and the Pd/n-InP diode photocurrent variation rate are related exponentially. The Schottky-diode response rate to the presence of hydrogen in the gas mixture increases with the illumination intensity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Nonradiative Recombination via Charge-Transfer-Exciton to Polaron Energy Transfer Limits Photocurrent in Organic Solar Cells

Here, a recombination and exciton loss mechanism is reported in organic solar cells involving energy transfer between charge transfer (CT) excitons and polarons, impacting photocurrent generation, particularly in the near-infrared where polaronic transitions typically reside. This process sets a low-energy cut-off in the external quantum efficiency spectrum of an excitonic donor/acceptor interface, determined by the low-energy polaron absorption peak and the CT state reorganization energy. Furthermore, this process explains the deviation from unity and bias dependence of the CT state's internal quantum efficiency at low photon energies. This process is demonstrated in a variety of systems and it is hypothesized that CT state to polaron energy transfer recombination may be responsible for a share of nonradiative recombination in all organic photovoltaics and can explain numerous experimentally observed device trends regarding photocurrent generation and energy losses. Overall, this work enhances the understanding of photophysical processes in organic materials and allows the design of systems that can avoid this recombination pathway.

14 SOLAR ENERGY↗

Optical Helicity-Manipulated Photocurrents and Photovoltages in Organic Solar Cells

The performance of an organic functional device can be effectively improved through external field manipulation. In this study, we experimentally demonstrate the optical polarization manipulation of the photocurrent or photovoltage in organic solar cells. Through switching the incident light from a linearly polarized light to a circularly polarized one, we find a pronounced change in the photocurrent, which is not observable in normal inorganic cells. There are two competing hypotheses for the primary process underlying the circular polarization-dependent phenomena in organic materials, one involving the inverse Faraday effect (IFE) and the other a direct photon spin–electron spin interaction. By way of ingenious device design and external magnetic field-induced stimuli, it is expected that the organic IFE can be a powerful experimental tool in revealing and elucidating excited-state processes occurring in organic spintronic and optoelectronic devices. Therefore, we believe that our results will potentially lead to the development of new multifunctional organic devices with integrated electronic, optical, and magnetic properties for energy conversion, optical communication, and sensing technologies.

14 SOLAR ENERGY↗

Hyperbolic enhancement of photocurrent patterns in minimally twisted bilayer graphene

Quasi-periodic moiré patterns and their effect on electronic properties of twisted bilayer graphene have been intensely studied. At small twist angle θ, due to atomic reconstruction, the moiré superlattice morphs into a network of narrow domain walls separating micron-scale AB and BA stacking regions. We use scanning probe photocurrent imaging to resolve nanoscale variations of the Seebeck coefficient occurring at these domain walls. The observed features become enhanced in a range of mid-infrared frequencies where the hexagonal boron nitride substrate is optically hyperbolic. Our results illustrate the capabilities of the nano-photocurrent technique for probing nanoscale electronic inhomogeneities in two-dimensional materials.

42 ENGINEERING↗

Visualizing moiré ferroelectricity via plasmons and nano-photocurrent in graphene/twisted-WSe2 structures

Abstract Ferroelectricity, a spontaneous and reversible electric polarization, is found in certain classes of van der Waals (vdW) materials. The discovery of ferroelectricity in twisted vdW layers provides new opportunities to engineer spatially dependent electric and optical properties associated with the configuration of moiré superlattice domains and the network of domain walls. Here, we employ near-field infrared nano-imaging and nano-photocurrent measurements to study ferroelectricity in minimally twisted WSe 2 . The ferroelectric domains are visualized through the imaging of the plasmonic response in a graphene monolayer adjacent to the moiré WSe 2 bilayers. Specifically, we find that the ferroelectric polarization in moiré domains is imprinted on the plasmonic response of the graphene. Complementary nano-photocurrent measurements demonstrate that the optoelectronic properties of graphene are also modulated by the proximal ferroelectric domains. Our approach represents an alternative strategy for studying moiré ferroelectricity at native length scales and opens promising prospects for (opto)electronic devices.

42 ENGINEERING↗

Photocurrent-driven transient symmetry breaking in the Weyl semimetal TaAs

Symmetry plays a central role in conventional and topological phases of matter, making the ability to optically drive symmetry changes a critical step in developing future technologies that rely on such control. Topological materials, like topological semimetals, are particularly sensitive to a breaking or restoring of time-reversal and crystalline symmetries, which affect both bulk and surface electronic states. While previous studies have focused on controlling symmetry via coupling to the crystal lattice, we demonstrate here an all-electronic mechanism based on photocurrent generation. Using second harmonic generation spectroscopy as a sensitive probe of symmetry changes, we observe an ultrafast breaking of time-reversal and spatial symmetries following femtosecond optical excitation in the prototypical type-I Weyl semimetal TaAs. Here, our results show that optically driven photocurrents can be tailored to explicitly break electronic symmetry in a generic fashion, opening up the possibility of driving phase transitions between symmetry-protected states on ultrafast timescales.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Synthesis, crystal and electronic structures, linear and nonlinear optical properties, and photocurrent response of oxyhalides CeHaVIO 4 (Ha = Cl, Br; VI = Mo, W)

Four heteroanionic oxyhalides, CeClMoO 4 , CeBrMoO 4 , CeClWO 4 , and CeBrWO 4 , have been studied as multifunctional materials, which show a combination of good second harmonic generation (SHG) response and photocurrent signals. Millimeter-sized CeHaVIO 4 (Ha = Cl, Br; VI = Mo, W) crystals were grown by halide salt flux. The crystal structure of CeHaVIO 4 crystals was accurately determined by single-crystal X-ray diffraction. CeClMoO 4 , CeBrMoO 4 , and CeBrWO 4 are isostructural to each other, and crystallize in the acentric LaBrMoO 4 structure type. CeClWO 4 crystallizes in a new structure type with unit cell parameters of a = 19.6059(2) Å, b = 5.89450(10) Å, c = 7.80090(10) Å, and β = 101.4746(8)°. The bandgaps of CeHaVIO 4 fall into the range of 2.8(1)–3.1(1) eV, which are much smaller than those of isotypic LaHaVIO 4 (Ha = Cl, Br; VI = Mo, W) in the range of 3.9(1)–4.3(1) eV. The narrowing of bandgaps in CeHaVIO 4 originates from the presence of partially filled 4f orbitals of cerium atoms, which was confirmed by density functional theory (DFT) calculations. The moderate bandgaps make CeHaVIO 4 suitable for infrared nonlinear optical (IR NLO) applications. CeBrMoO 4 and CeBrWO 4 exhibit moderate SHG responses of 0.58× AGS and 0.46× AGS, respectively, and are both type-I phase-matching materials. Moderate SHG response, easy growth of crystals, high ambient stability, and type-I phase-matching behavior make CeBrMoO 4 and CeBrWO 4 great materials for IR NLO applications. CeHaVIO 4 films also exhibited good photocurrent response upon light radiation. Furthermore, this work demonstrates the rich structural chemistry of the REHaVIO 4 (RE = Y, La–Lu; Ha = Cl, Br; VI = Mo, W) family and the potential presence of more multifunctional materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Local photocurrent generation in thin films of the topological insulator Bi{sub 2}Se{sub 3}

We report on the optoelectronic properties of thin films of Bi{sub 2}Se{sub 3} grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns. In spatially resolved experiments, we observe submicron photocurrent patterns with positive and negative amplitudes. The patterns are independent of the applied bias voltage, but they depend on the width of the circuits. We interpret the patterns to originate from a local photocurrent generation due to potential fluctuations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Photocurrent extraction efficiency in colloidal quantum dot photovoltaics

The efficiency of photocurrent extraction was studied directly inside operating Colloidal Quantum Dot (CQD) photovoltaic devices. A model was derived from first principles for a thin film p-n junction with a linearly spatially dependent electric field. Using this model, we were able to clarify the origins of recent improvement in CQD solar cell performance. From current-voltage diode characteristics under 1 sun conditions, we extracted transport lengths ranging from 39 nm to 86 nm for these materials. Characterization of the intensity dependence of photocurrent extraction revealed that the dominant loss mechanism limiting the transport length is trap-mediated recombination.

14 SOLAR ENERGY↗

Photocurrent spectrum study of a quantum dot single-photon detector based on resonant tunneling effect with near-infrared response

We present the photocurrent spectrum study of a quantum dot (QD) single-photon detector using a reset technique which eliminates the QD's “memory effect.” By applying a proper reset frequency and keeping the detector in linear-response region, the detector's responses to different monochromatic light are resolved which reflects different detection efficiencies. We find the reset photocurrent tails up to 1.3 μm wavelength and near-infrared (∼1100 nm) single-photon sensitivity is demonstrated due to interband transition of electrons in QDs, indicating the device a promising candidate both in quantum information applications and highly sensitive imaging applications operating in relative high temperatures (>80 K).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effects of graphene oxide concentration on optical properties of ZnO/RGO nanocomposites and their application to photocurrent generation

The effects of different concentrations of graphene oxide (GO) on the structure and optical properties of ZnO nanoparticles (NPs) were investigated. The nanocomposites were synthesized via the sol-gel method in a gelatin medium. X-ray diffraction patterns (XRD) and Fourier transform infrared spectroscopy indicated that the GO sheets were reduced and changed to reduced GO (RGO) during the calcination of the nanocomposites at 400 °C. In addition, the XRD patterns of the NPs indicated a hexagonal (wurtzite) structure for all the products. Microscopic studies showed that the NPs were decorated and dispersed on the RGO sheets very well. However, these studies revealed that the RGO concentration had an effect on the crystal growth process for the ZnO NPs. Furthermore, these studies showed that the NPs could be grown with a single crystal quality in an optimum RGO concentration. According to the XRD results that were obtained from pure ZnO NPs, the calcinations temperature was decreased by the RGO. UV–vis and room temperature photoluminescence studies showed that the optical properties of the ZnO/RGO nanocomposite were affected by the RGO concentration. Finally, the obtained ZnO/RGO nanocomposite was used to generate a photocurrent. Observations showed that the photocurrent intensity of the nanocomposite was significantly increased by increasing the RGO, with an optimum RGO concentration.

36 MATERIALS SCIENCE↗