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NASA NTRS1992

X-ray spectroscopy with silicon pin and avalanche photo diodes

Results of an evaluation of silicon P-Intrinsic-N (PIN) photodiodes and Avalanche Photodiodes (APD) for the direct detection of soft x rays from 1 to 20 keV and for the detection of scintillation light output from CsI(TI) for higher x ray energies (30 to 1000 keV) are presented. About one keV resolution was achieved at room temperature for both the PIN and APD detectors for soft x rays (1 to 20 keV). Commercially available, low power (18 mV), low noise, hybrid preamplifiers, were used. These photodiodes were also coupled to CsI(TI) scintillator and obtained about 6 resolution at 662 keV. The photodiode frequency response matches well with the emission spectrum of the CsI(TI) scintillator providing good spectral resolution and a higher signal than NaI(TI) when viewed by conventional photomultipliers. A PIN-CsI(TI) combination provides a low energy threshold of around 60 keV while for the APD-CsI(TI) it is 15 keV.

Desai, U. D.↗

NASA NTRS2004

Silicon Carbide Schottky Barrier Diode

This chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin-Schottky diodes. The development history is reviewed ad the key performance parameters are discussed. Applications of SiC SBDs in power electronic circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

Zhao, Jian H.↗

NASA NTRS1995

Solid-state image sensor with focal-plane digital photon-counting pixel array

A photosensitive layer such as a-Si for a UV/visible wavelength band is provided for low light level imaging with at least a separate CMOS amplifier directly connected to each PIN photodetector diode to provide a focal-plane array of NxN pixels, and preferably a separate photon-counting CMOS circuit directly connected to each CMOS amplifier, although one row of counters may be time shared for reading out the photon flux rate of each diode in the array, together with a buffer memory for storing all rows of the NxN image frame before transfer to suitable storage. All CMOS circuitry is preferably fabricated in the same silicon layer as the PIN photodetector diode for a monolithic structure, but when the wavelength band of interest requires photosensitive material different from silicon, the focal-plane array may be fabricated separately on a different semiconductor layer bump-bonded or otherwise bonded for a virtually monolithic structure with one free terminal of each diode directly connected to the input terminal of its CMOS amplifier and digital counter for integration of the photon flux rate at each photodetector of the array.

Fossum, Eric R.↗

DOE OSTI2024

Batch VUV4 characterization for the SBC-LAr10 scintillating bubble chamber

The Scintillating Bubble Chamber (SBC) collaboration purchased 32 Hamamatsu VUV4 silicon photomultipliers (SiPMs) for use in SBC-LAr10, a bubble chamber containing 10 kg of liquid argon. A dark-count characterization technique, which avoids the use of a single-photon source, was used at two temperatures to measure the VUV4 SiPMs breakdown voltage (V BD ), the SiPM gain (g SiPM ), the rate of change of g SiPM with respect to voltage (m), the dark count rate (DCR), and the probability of a correlated avalanche (P CA ) as well as the temperature coefficients of these parameters. A Peltier-based chilled vacuum chamber was developed at Queen's University to cool down the Quads to 233.15 ± 0.2 K and 255.15 ± 0.2 K with average stability of ±20 mK. An analysis framework was developed to estimate V BD to tens of mV precision and DCR close to Poissonian error. The temperature dependence of V BD was found to be 56 ± 2 mV K -1 , and m on average across all Quads was found to be (459 ± 3(stat.)±23(sys.))× 10 3 e- PE -1 V -1 . The average DCR temperature coefficient was estimated to be 0.099 ± 0.008 K -1 corresponding to a reduction factor of 7 for every 20 K drop in temperature. The average temperature dependence of P CA was estimated to be 4000 ± 1000 ppm K -1 . P CA estimated from the average across all SiPMs is a better estimator than the P CA calculated from individual SiPMs, for all of the other parameters, the opposite is true. All the estimated parameters were measured to the precision required for SBC-LAr10, and the Quads will be used in conditions to optimize the signal-to-noise ratio.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

NASA NTRS2016

Effects of Parasitic Reactance on Lattice Circuit Slotline Switch

A slotline lattice switch has recently been proposed and demonstrated. In that paper, ideal diode characteristics were assumed. In this paper, the effects of parasitic reactances, due to the diode and the wire bonds that connect it to the circuit, are investigated. The switch is compared to a traditional slotline switch with a single diode across the slot.

pin diode↗

NASA NTRS2016

Effects of Parasitic Reactance on Lattice Circuit Slotline Switch

Lattice Circuit↗

DOE OSTI2026

High-performance nanodevices based on WGe 2⁢ N 4 monolayer

Two-dimensional (2D) 𝑀⁢𝐴 2 ⁢𝑍 4 -family monolayers (MLs) have emerged as promising semiconductors due to their element tunability and rich electronic and optoelectronic properties. In this work, using first-principles calculations, we investigate the electronic, mechanical, transport, and optoelectronic properties of WGe 2⁢ N 4 ML with a small indirect bandgap. Various nanodevices based on WGe 2 ⁢N 4 ML are studied, including pn-junction diodes, pin-junction field-effect transistors (FETs), and phototransistors. The present results reveal that the WGe 2⁢ N 4 ML exhibits high rigidity, thermal stability, and remarkable light absorption. These nanodevices demonstrate excellent performance: (1) the pn-junction diode shows a high rectification ratio and a near-Shockley-limit ideality factor, (2) the pin-junction FET exhibits significant gate voltage modulation capability with subthreshold swing as low as 71 mV/dec (close to the theoretical limit calculated based on the Boltzmann distribution), and (3) the phototransistor displays strong optoelectronic responses in the visible and ultraviolet regions. Furthermore, these findings establish WGe 2 ⁢N 4 ML as a versatile platform for developing high-performance, multifunctional nanoelectronic and optoelectronic devices, significantly expanding the application potential of 𝑀⁢𝐴 2⁢ 𝑍 4 -family materials.

2-dimensional systems↗

DOE OSTI2022

Characterization of self-magnetic pinch (SMP) radiographic diode performance on RITS-6 at Sandia National Laboratories. I. Diode dynamics, DC heating to extend radiation pulse

Radiographic diodes focus on an intense electron beam to a small spot size to minimize the source area of energetic photons for radiographic interrogation. The self-magnetic pinch (SMP) diode has been developed as such a source and operated as a load for the six-cavity radiographic integrated test stand (RITS-6) inductive voltage adder driver. While experiments support the generally accepted conclusion that a 1:1 aspect diode (cathode diameter equals anode–cathode gap) delivers optimum SMP performance, such experiments also show that reducing the cathode diameter, while reducing spot size, also results in reduced radiation dose, by as much as 50%, and degraded shot reproducibility. Analysis of the effective electron impingement angle on the anode converter with time made possible by a newly developed dose-rate array diagnostic indicates that fast-developing oscillations of the angle are correlated with early termination of the radiation pulse on many of the smaller-diameter SMP shots. This behavior as a function of relative cathode size persists through experiments with output voltages and currents up to 11.5 MV and 225 kA, respectively, and with spot sizes below approximately few millimeters. Since simulations to date have not predicted such oscillatory behavior, considerable discussion of the angle behavior of SMP shots is made to lend credence to the inference. We report there is clear anecdotal evidence that DC heating of the SMP diode region leads to stabilization of this oscillatory behavior. This is the first of two papers on the performance of the SMP diode on the RITS-6 accelerator.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2022

Characterization of self-magnetic pinch radiographic diode performance on RITS-6 at Sandia National Laboratories. II. Coupling between the inductive voltage adder and the SMP load

The self-magnetic pinch (SMP) diode is a type of radiographic diode used to generate an intense electron beam for radiographic applications. At Sandia National Laboratories, SMP was the diode load for the six-cavity radiographic integrated test stand inductive voltage adder (IVA) driver operated in a magnetically insulated transmission line (MITL). The MITL contributes a flow current in addition to the current generated within the diode itself. Extensive experiments with a MITL of 40Ω load impedance [T. J. Renk et al., Phys. Plasmas 29, 023105 (2022)] indicate that the additional flow current leads to results similar to what might be expected from a conventional high-voltage interface driver, where flow current is not present. However, when the MITL flow impedance was increased to 80 Ω, qualitatively different diode behavior was observed. This includes large retrapping waves suggestive of an initial coupling to low impedance as well as diode current decreasing with time even as the total current does not. A key observation is that the driver generates total current (flow + diode) consistent with the flow impedance of the MITL used. The case is made in this paper that the 80Ω MITL experiments detailed here can only be understood when the IVA-MITL-SMP diode is considered as a total system. Additionally, the constraint of fixed total current plus the relatively high flow impedance limits the ability of the diode (whether SMP or other type) to act as an independent load. An unexpected new result is that in tracking the behavior of the electron strike angle on the converter as a function of time, we observed that the conventional cIV x “Radiographic” radiation scaling (where x~2.2) begins to break down for voltages above 8 MV, and cubic scaling is required to recover accurate angle tracking.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2023

Using machine learning with optical profilometry for GaN wafer screening

Abstract To improve the manufacturing process of GaN wafers, inexpensive wafer screening techniques are required to both provide feedback to the manufacturing process and prevent fabrication on low quality or defective wafers, thus reducing costs resulting from wasted processing effort. Many of the wafer scale characterization techniques—including optical profilometry—produce difficult to interpret results, while models using classical programming techniques require laborious translation of the human-generated data interpretation methodology. Alternatively, machine learning techniques are effective at producing such models if sufficient data is available. For this research project, we fabricated over 6000 vertical PiN GaN diodes across 10 wafers. Using low resolution wafer scale optical profilometry data taken before fabrication, we successfully trained four different machine learning models. All models predict device pass and fail with 70–75% accuracy, and the wafer yield can be predicted within 15% error on the majority of wafers.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Direct comparison of wire, foil, and hybrid X-pinches on a 200 kA, 150 ns current driver

Wire X-pinches (WXPs) have been studied comprehensively as fast (~1 ns pulse width), small (~1 μm) x-ray sources, created by twisting two or more fine wires into an “X” to produce a localized region of extreme magnetic pressure at the cross-point. Recently, two alternatives to the traditional WXP have arisen: the hybrid X-pinch (HXP), composed of two conical electrodes bridged by a thin wire or capillary, and the laser-cut foil X-pinch (LCXP), cut from a thin foil using a laser. We present a comparison of copper wire, hybrid, and laser-cut foil X-pinches on a single experimental platform: UC San Diego’s ~200 kA, 150 ns rise time GenASIS driver. All configurations produced 1–2 ns pulse width, ≤5 μm soft x-ray (Cu L-shell, ~1 keV) sources (resolutions diagnostically limited) with comparable fluxes. WXP results varied with linear mass and wire count, but consistently showed separate pinch and electron-beam-driven sources. LCXPs produced the brightest (~1 MW), smallest (≤5 μm) Cu K-shell sources, and spectroscopic data showed both H-like Cu K α lines indicative of source temperatures ≥2 keV, and cold K α (~8050 eV) characteristic of electron beam generated sources, which were not separately resolved on other diagnostics (within 1–2 ns and ≤200 μm). HXPs produced minimal K-shell emission and reliably single, bright, and small L-shell sources after modifications to shape the early current pulse through them. Benefits and drawbacks for each configuration are discussed to provide potential X-pinch users with the information required to choose the configuration best suited to their needs.

42 ENGINEERING↗

DOE OSTI2023

Measurement of minority carrier diffusion length in p -GaN using electron emission spectroscopy (EES)

Electron emission spectroscopy was performed on metalorganic chemical vapor deposition grown p-n – -n + junctions with p-thicknesses ranging from 50 to 300 nm, doped with [Mg] = 3.5 × 10 19 cm –3 . By measuring the decreasing emitted electron intensity from a cesiated p-GaN surface with increasing p-thickness, we were able to extract the minority carrier diffusion length of electron in p-type GaN, L e = 26 ± 3 nm. The measured value is in good agreement with literature reported values. In conclusion, the extrapolated electron current at the n – region–p-GaN interface is in reasonable agreement with the simulated electron current at the interface.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Design, upgrade and characterization of the silicon photomultiplier front-end for the AMIGA detector at the Pierre Auger Observatory

AMIGA (Auger Muons and Infill for the Ground Array) is an upgrade of the Pierre Auger Observatory to complement the study of ultra-high-energy cosmic rays (UHECR) by measuring the muon content of extensive air showers (EAS). It consists of an array of 61 water Cherenkov detectors on a denser spacing in combination with underground scintillation detectors used for muon density measurement. Each detector is composed of three scintillation modules, with 10 m 2 detection area per module, buried at 2.3 m depth, resulting in a total detection area of 30 m 2 . Silicon photomultiplier sensors (SiPM) measure the amount of scintillation light generated by charged particles traversing the modules. In this paper, the design of the front-end electronics to process the signals of those SiPMs and test results from the laboratory and from the Pierre Auger Observatory are described. Compared to our previous prototype, the new electronics shows a higher performance, higher efficiency and lower power consumption, and it has a new acquisition system with increased dynamic range that allows measurements closer to the shower core. The new acquisition system is based on the measurement of the total charge signal that the muonic component of the cosmic ray shower generates in the detector.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2021

Calibration of the underground muon detector of the Pierre Auger Observatory

To obtain direct measurements of the muon content of extensive air showers with energy above 10 16.5 eV, the Pierre Auger Observatory is currently being equipped with an underground muon detector (UMD), consisting of 219 10 m 2 -modules, each segmented into 64 scintillators coupled to silicon photomultipliers (SiPMs). Direct access to the shower muon content allows for the study of both of the composition of primary cosmic rays and of high-energy hadronic interactions in the forward direction. As the muon density can vary between tens of muons per m 2 close to the intersection of the shower axis with the ground to much less than one per m 2 when far away, the necessary broad dynamic range is achieved by the simultaneous implementation of two acquisition modes in the read-out electronics: the binary mode, tuned to count single muons, and the ADC mode, suited to measure a high number of them. In this work, we present the end-to-end calibration of the muon detector modules: first, the SiPMs are calibrated by means of the binary channel, and then, the ADC channel is calibrated using atmospheric muons, detected in parallel to the shower data acquisition. The laboratory and field measurements performed to develop the implementation of the full calibration chain of both binary and ADC channels are presented and discussed. The calibration procedure is reliable to work with the high amount of channels in the UMD, which will be operated continuously, in changing environmental conditions, for several years.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2021

Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon

Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45° angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. Here, the reflectivity is determined to be 25–36 % at an angle of incidence of 20° for the four samples and increases to up to 65 % at 70° for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.

(pin diodes, APDs, SiPMs, G-APDs, CCDs, EBCCDs, EM↗

DOE OSTI2023

Studies in pulse shape discrimination for an optimized ASIC design

The continued advancements of Silicon Photomultipliers (SiPMs) have made them viable photosensors for low recoil energy Pulse Shape Discrimination (PSD) between fast neutron and gamma interactions when coupled to an appropriate scintillator. At the same time, the large number of channels in a typical array calls for the development of low-cost and low-power electronics. A custom integrated circuit (ASIC) is an ideal solution for this purpose. To assess the requirements for such an ASIC, studies were performed using two scintillators, Stilbene and EJ-276, coupled to a 6 x 6 mm SiPM from Onsemi. We demonstrate that both scintillators are viable for performing PSD for interaction energies from 100 keV to several MeV while optimizing the integration periods used in the PSD metric. These measurements inform the design parameters of the ASIC under development.

Si-PMTs↗

DOE OSTI2023

Skipper-CCD sensors for the Oscura experiment: requirements and preliminary tests

Oscura is a proposed multi-kg skipper-CCD experiment designed for a dark matter (DM) direct detection search that will reach unprecedented sensitivity to sub-GeV DM-electron interactions with its 10 kg detector array. Oscura is planning to operate at SNOLAB with 2070 m overburden, and aims to reach a background goal of less than one event in each electron bin in the 2–10 electron ionization-signal region for the full 30 kg-year exposure, with a radiation background rate of 0.01 dru.[1 dru (differential rate unit) corresponds to 1 event/kg/day/keV.] In order to achieve this goal, Oscura must address each potential source of background events, including instrumental backgrounds. In this work, we discuss the main instrumental background sources and the strategy to control them, establishing a set of constraints on the sensors' performance parameters. We present results from the tests of the first fabricated Oscura prototype sensors, evaluate their performance in the context of the established constraints and estimate the Oscura instrumental background based on these results.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2024

Investigating resource-efficient neutron/gamma classification ML models targeting eFPGAs

There has been considerable interest and resulting progress in implementing machine learning (ML) models in hardware over the last several years from the particle and nuclear physics communities. A big driver has been the release of the Python package, hls4ml, which has enabled porting models specified and trained using Python ML libraries to register transfer level (RTL) code. So far, the primary end targets have been commercial field-programmable gate arrays (FPGAs) or synthesized custom blocks on application specific integrated circuits (ASICs). However, recent developments in open-source embedded FPGA (eFPGA) frameworks now provide an alternate, more flexible pathway for implementing ML models in hardware. These customized eFPGA fabrics can be integrated as part of an overall chip design. In general, the decision between a fully custom, eFPGA, or commercial FPGA ML implementation will depend on the details of the end-use application. In this work, we explored the parameter space for eFPGA implementations of fully-connected neural network (fcNN) and boosted decision tree (BDT) models using the task of neutron/gamma classification with a specific focus on resource efficiency. We used data collected using an AmBe sealed source incident on Stilbene, which was optically coupled to an OnSemi J-series silicon photomultiplier (SiPM) to generate training and test data for this study. We investigated relevant input features and the effects of bit-resolution and sampling rate as well as trade-offs in hyperparameters for both ML architectures while tracking total resource usage. The performance metric used to track model performance was the calculated neutron efficiency at a gamma leakage of 10 -3 . The results of the study will be used to aid the specification of an eFPGA fabric, which will be integrated as part of a test chip.

47 OTHER INSTRUMENTATION↗