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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS2016

Chip Scale Ultra-Stable Clocks: Miniaturized Phonon Trap Timing Units for PNT of CubeSats

The Chip Scale Ultra-Stable Clocks (CSUSC) project aims to provide a superior alternative to current solutions for low size, weight, and power timing devices. Currently available quartz-based clocks have problems adjusting to the high temperature and extreme acceleration found in space applications, especially when scaled down to match small spacecraft size, weight, and power requirements. The CSUSC project aims to utilize dual-mode resonators on an ovenized platform to achieve the exceptional temperature stability required for these systems. The dual-mode architecture utilizes a temperature sensitive and temperature stable mode simultaneously driven on the same device volume to eliminate ovenization error while maintaining extremely high performance. Using this technology it is possible to achieve parts-per-billion (ppb) levels of temperature stability with multiple orders of magnitude smaller size, weight, and power.

Dual-mode resonators↗
NASA NTRS2020

Desorption Kinetics of O and CO from Graphitic Carbon Surfaces

The desorption of O/CO from graphitic carbon surfaces is investigated using a one-dimensional model describing the adsorbate interactions with the surface phonon bath. The kinetics of desorption are described through the solution of a master equation for the time-dependent population of the adsorbate in an oscillator state, which is modified through thermal fluctuations at the surface. The interaction of the adsorbate with the surface phonons is explicitly captured by using the computed phonon density Of states (PDOS) of the surface. The coupling of the adsorbate with the phonon bath results in the transition of the adsorbate up and down a vibrational ladder. The adsorbate-surface interaction is represented in the model using a Morse potential, which allows for the desorption process to be directly modeled as a transition from bound to free (continuum) state. The PDOS is a property of the material and the lattice; and is highly sensitive to the presence of defects. The effect of etch pits along with random surface defects on the PDOS is considered in the present work. The presence of defects causes a redshift and broadening of the PDOS, which in turn changes the phonon frequency modes available for adsorbate coupling at the surface. Using the realistic PDOS distributions, the phonon-induced desorption (PID) model was used to compute the transition and desorption rates for both pristine and defective systems. Mathissen’s rule is used to compute the phonon relaxation time for pristine and defective systems based on the phonon scattering times for each of the different scattering processes. First, the desorption rates of the pristine system is fitted against the experimental values to obtain the Morse potential parameters for each of the observed adatoms. These Morse potential parameters are used along with the defective PDOS and phonon relaxation time to compute the desorption rates for the defective system. The defective system rates (both transition and desorption) were consistently lower in comparison with the pristine system. The difference between the transition rates is more significant at lower initial states due to higher energy spacing between the levels. In the case of the desorption rates, the difference between the defective and pristine system is more significant at higher temperatures. The desorption rates for each of the system shows an order of magnitude decrease with the strongly bound systems exhibiting the greatest reduction in the desorption rates.

Swaminathan-Gopalan, Krishnan↗
NASA NTRS1985

Conducting a thermal conductivity survey

A physically transparent approximate theory of phonon decay rates is presented starting from a pair potential model of the interatomic forces in an insulator or semiconductor. The theory applies in the classical regime and relates the 3-phonon decay rate to the third derivative of the pair potential. Phonon dispersion relations do not need to be calculated, as sum rules relate all the needed quantities directly to the pair potential. The Brillouin zone averaged phonon lifetime turns out to involve a dimensionless measure of the anharmonicity multiplied by an effective density of states for 3-phonon decay. Results are given for rare gas and alkali halide crystals. For rare gases, the results are in good agreement with more elaborate perturbation calculations. Comparison to experimental data on phonon linewidths and thermal conductivity are made.

Allen, P. B.↗
NASA NTRS1991

A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys

A model is presented for the high-temperature transport properties of large-grain-size, heavily doped n-type silicon-germanium alloys. Electron and phonon transport coefficients are calculated using standard Boltzmann equation expressions in the relaxation time approximation. Good agreement with experiment is found by considering acoustic phonon and ionized impurity scattering for electrons, and phonon-phonon, point defect, and electron-phonon scattering for phonons. The parameters describing electron transport in heavily doped and lightly doped materials are significantly different and suggest that most carriers in heavily doped materials are in a band formed largely from impurity states. The maximum dimensionless thermoelectric figure of merit for single-crystal, n-type Si(0.8)Ge(0.2) at 1300 K is estimated at ZT about 1.13 with an optimum carrier concentration of n about 2.9 x 10 to the 20th/cu cm.

Vining, Cronin B.↗
NASA NTRS2007

Temperature Dependent E2 Raman Modes in the ZnCoO Ternary Alloy

The anharmonic properties of low and high frequency E2 modes of ZnO and Co doped ZnO were investigated using Raman scattering spectroscopy. We have determined the behavior of frequency, linewidths, and lifetime of E2 modes in the temperature range from 80 to 800 K. In the case of E2(high) mode the frequency shift towards the lower energy side was analyzed in light of the theory of anharmonic phonon-phonon interaction and thermal expansion of the lattice, and the linewidth behavior was analyzed in terms of anharmonic effect of three-phonon decay mechanism. But in the case of E2(low), the linewidth and frequency behaved practically harmonic with respect to temperature and independent of Co substitutions. It is found that the E2(high) phonon anharmonicity is higher for ZnCoO alloys than in pure ZnO and it increases with the compositional disorder. The low temperature lifetime of E2 phonon in ZnO, 1 % and 3% Co doped ZnO were found to be 1.S2, 1.74, and 1.54 ps, respectively.

Samanta, K.↗
NASA NTRS1971

Recombination luminescence in irradiated silicon-effects of uniaxial stress and temperature variations.

Demonstration that luminescence in irradiated silicon consists of a spectral group between 0.80 and 1.0 eV which seems to be independent of impurities, while a lower energy group between 0.60 and 0.80 eV is seen only in pulled crystals. The small halfwidth and temperature dependence of the sharp zero-phonon lines observed in these spectra indicate that the luminescence arises from a bound-to-bound transition. A model is proposed for the transition mechanism. Stress data taken on the 0.79-eV zero-phonon line in pulled crystals can be fit by either a tetragonal 100 (in brackets) defect symmetry or by conduction-band splitting effects. It is suggested that the 0.79-eV zero-phonon line and the 0.60- to 0.80-eV spectral group arise from the EPR G-15 center. Stress data on a zero-phonon line at 0.97 eV associated with the 0.80- to 1.0-eV spectral group can be explained by a trigonal 111 (in brackets) defect. The divacancy is tentatively suggested as responsible for this luminescence spectra.

Jones, C. E.↗
NASA NTRS1992

Vibronic spectra of Cu(2+) in ZnTe

Infrared-absorption spectra of substitutional Cu(2+) ions in ZnTe have been measured at 4.6 K. Several distinct absorption peaks are observed between 800 and 2000/cm. Absorption peaks at 1002 and 1069/cm are identified as zero-phonon lines arising from 2T2-2E transitions. Between 1069 and 2000/cm, several sets of sharp absorption lines are seen to recur regularly at an interval of 210/cm, corresponding to the LO phonon energy. Within each set distinct vibronic sidebands that cannot be identified with critical-point energies of TA, LA, TO or LO phonon modes are observed. A dynamic Jahn-Teller effect, involving coupling between a single-phonon mode and the electronic states of the 2E level, is proposed to account for the observed spectra.

Volz, M. P.↗
NASA NTRS2008

Electrical NEP in Hot-Electron Titanium Superconducting Bolometers

We are presenting the current progress on the titanium (Ti) hot-electron transition-edge devices. The ultimate goal of this work is to develop a submillimeter Hot-Electron Direct Detector (HEDD) with the noise equivalent power NEP = 10(sup -1) - 10(sup -20) W/Hz(sup 1/2) for the moderate resolution spectroscopy and Cosmic Microwave Background (CMB) studies on future space telescope (e.g., SPICA, SAFIR, SPECS, CMBPol) with cryogenically cooled (approximately 4-5 K) mirrors. Recently, we have achieved the extremely low thermal conductance (approximately 20 fW/K at 300 mK and approximately 0.1 fW/K at 40 mK) due to the electron-phonon decoupling in Ti nanodevices with niobium (Nb) Andreev contacts. This thermal conductance translates into the "phonon-noise" NEP approximately equal to 3 x 10(sup -21) W/Hz(sup 1/2) at 40 mK and NEP approximately equal to 3 x 10(sup -19) W/Hz(sup 1/2) at 300 mK. These record data indicate the great potential of the hot-electron detector for meeting many application needs. Beside the extremely low phonon-noise NEP, the nanobolometers have a very low electron heat capacitance that makes them promising as detectors of single THz photons. As the next step towards the practical demonstration of the HEDD, we fabricated and tested somewhat larger than in Ref.1 devices (approximately 6 micrometers x 0.35 micrometers x 40 nm) whose critical temperature is well reproduced in the range 300-350 mK. The output electrical noise measured in these devices with a low-noise dc SQUID is dominated by the thermal energy fluctuations (ETF) aka "phonon noise". This indicates the high electrothermal loop gain that effectively suppresses the contributions of the Johnson noise and the amplifier (SQUID) noise. The electrical NEP = 6.7 x 10(sup -18) W/Hz(sup 1/2) derived from these measurements is in good agreement with the predictions based on the thermal conductance data. The very low NEP and the high speed (approximately microns) are a unique combination not found in other detectors.

transition-edge sensor↗
NASA NTRS1975

Superconductivity in the palladium-hydrogen system

Band theory and phonon measurements are used to calculate the electron-phonon coupling constant wavelength for Pd and PdD. The results indicate that superconductivity is absent in Pd metal because of the large value of the Coulomb pseudopotential, and that superconductivity occurs in PdD primarily because of coupling with the optic phonons. These results are consistent with superconducting transition-temperature measurements for these systems.

Papaconstantopoulos, D. A.↗
NASA NTRS1975

On the lattice dynamics of metallic hydrogen and other Coulomb systems

Numerical results for the phonon spectra of metallic hydrogen and other Coulomb systems in cubic lattices are presented. In second order in the electron-ion interaction, the behavior of the dielectric function of the interacting electron gas for arguments around the seond Fermi harmonic leads to drastic Kohn anomalies and even to imaginary phonon frequencies. Third-order band-structure corrections are also calculated. Properties of self-consistent phonons and the validity of the adiabatic approximation are discussed.

Beck, H.↗
NASA NTRS1977

Correlation between stimulated scattering processes and laser-induced damage in crystalline quartz

The results of a systematic series of experiments to uncover possible correlation between laser-induced stimulated-Brillouin-scattering (SBS) phonons and damage in quartz are presented. Such correlation is confirmed and the various thresholds are established. The anomalous transmission factor under phonon generation is found to decay exponentially as predicted with increasing incident laser power. The LF SBS phonon is also demonstrated to be a sensitive probe for precatastrophic damage.

Yu, C.↗