Microscopic Models for Engineering of Optoelectronic Devices (invited).
Abstract not provided.
Chow, Weng Wah↗
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Results for “OPTOELECTRONIC DEVICES”
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Strain control in optoelectronic devices
A coating having a mismatched coefficient of thermal expansion is applied to an underlying light emitting diode (LED) or laser diode (LD), such that as the temperature of the device changes, a varying level of strain is introduced to the underlying LED or LD. Because strain can also adjust the effective bandgap energy (and hence emission wavelength) of the device, the external strain-inducing coating can act to either compensate for the wavelength shift due to temperature (resulting in reduced dλ/dT) or accentuate it (resulting in increased dλ/dT). By proper selection of coating material and geometry, full control over dλ/dT can be achieved.
Voss, Lars F.↗
Optoelectronic devices and methods of making the same
The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.
Palmstrom, Axel Finn↗
Flexible nanograss with highest combination of transparency and haze for optoelectronic plastic substrates
Transparent polymer substrates have recently received increased attention for various flexible optoelectronic devices. Optoelectronic applications such as solar cells and light emitting-diodes would benefit from substrates with both high transparency and high haze, which increase how much light scatters into or out of the underlying photoactive layers. In this letter, we demonstrate a new flexible nanograss plastic substrate that displays the highest combination of transparency and haze in the literature for polyethylene terephthalate (PET). Here, as opposed to other nanostructures that increase haze at the expense of transparency, our nanograss demonstrates the potential to improve both haze and transparency. Furthermore, the monolithic nanograss may be fabricated in a facile scalable maskless reactive ion etching process without the need for additional lithography or synthesis of nanostructures. Our 9 μ m height nanograss sample exhibits a transparency and haze of 92.4% and 89.4%, respectively, and our 34 μ m height nanograss displays a transparency and haze of 91.0% and 97.1%, respectively. We also performed durability experiments that demonstrate these nanostructured PET substrates are robust from bending and show similar transmission and haze values after 5000 cycles of bending.
42 ENGINEERING↗
Device-packaging method and apparatus for optoelectronic circuits
An optoelectronic device package and a method for its fabrication are provided. The device package includes a lid die and an active die that is sealed or sealable to the lid die and in which one or more optical waveguides are integrally defined. The active die includes one or more active device regions, i.e. integral optoelectronic devices or etched cavities for placement of discrete optoelectronic devices. Optical waveguides terminate at active device regions so that they can be coupled to them. Slots are defined in peripheral parts of the active dies. At least some of the slots are aligned with the ends of integral optical waveguides so that optical fibers or optoelectronic devices inserted in the slots can optically couple to the waveguides.
36 MATERIALS SCIENCE↗
Optoelectronic semiconductor device and method of fabrication
An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of the plurality of domes, the optoelectronic device achieves high performance. A solar cell having high energy-conversion efficiency, improved absorption over the spectral range of interest, and an improved acceptance angle is presented as an exemplary device.
14 SOLAR ENERGY↗
Luminescent group 1A copper halides and uses thereof
High photoluminescence, high stability, inorganic perovskite compounds comprising an alkali metal selected from potassium (K), rubidium (Rb), and cesium (Cs); copper (Cu); and at least one halogen selected from chlorine (Cl), bromine (Br), and iodine (I). The perovskites may be free of lead (Pb). The inorganic perovskite compound may be used in an optoelectronic device. The optoelectronic device optionally contains a phosphor such as a blue-emitting phosphor. The inorganic perovskite compound may be used as an anti-counterfeiting nanotaggant applied on or within an object that susceptible to counterfeiting to enable confirmation of an authentic object.
Saparov, Bayram↗
Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby
A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in Transition-Metal Dichalcogenides
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14 SOLAR ENERGY↗
3D‐Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device
Abstract Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide‐bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically‐active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin‐electric field coupling to measure electronic phenomena. In this work, charge‐state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen‐vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. Optical control is used to change the charge state of background impurities inside the diamond on‐demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. Conducting channels that control carrier flow, key steps toward optically reconfigurable, wide‐bandgap optoelectronics are then engineered using light. This work might be extended to probe other wide‐bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic and quantum technologies.
Wood, Alexander A.↗
Surface Modification of Backsheets Using Coupling Agents for Roll-To-Roll Processed Thin-Film Solar Photovoltaic (PV) Module Packaging Application
For many flexible electronic and photonic devices, moisture stability is one of the most important factors that affects its short- and long-term performance. To maintain the performance, the device should be packaged in such a way that it hermetically blocks moisture from the device; however, in practice, it is rather difficult to achieve. The more practical solution is to impede the moisture ingress to the device. In optoelectronic devices that will be outdoors like solar cells, the interfacial adhesion strength between the encapsulant layer (adhesive) and a moisture barrier layer is also a critical parameter. This paper presents surface modifications of poly(ethylene terephthalate) (PET) carrier films, one of the layers in the trilayer barrier film that directly adheres to an encapsulant, using chemical, UV/ozone, and both treatments to improve adhesion with the thermoset encapsulant polymer material. Whereas previous studies also utilized treatment methods to increase the wettability characteristics, in this paper, we not only present the results of the adhesion strength upon various techniques to achieve good adhesion but also screen their behavior upon exposure to a damp–heat (60 °C, 90% RH) environment. Here, we found that the combined treatment method increases the adhesion by up to 12.1-fold and demonstrates up to a 200% increase in adhesion strength even upon our severe damp–heat environmental condition.
36 MATERIALS SCIENCE↗
Direct Optical Patterning of Quantum Dot Light-Emitting Diodes via In Situ Ligand Exchange
Precise patterning of quantum dot (QD) layers is an important prerequisite for fabricating QD light-emitting diode (QLED) displays and other optoelectronic devices. However, conventional patterning methods cannot simultaneously meet the stringent requirements of resolution, throughput, and uniformity of the pattern profile while maintaining a high photoluminescence quantum yield (PLQY) of the patterned QD layers. Here, a specially designed nanocrystal ink is introduced, "photopatternable emissive nanocrystals" (PENs), which satisfies these requirements. Photoacid generators in the PEN inks allow photoresist-free, high-resolution optical patterning of QDs through photochemical reactions and in situ ligand exchange in QD films. Various fluorescence and electroluminescence patterns with a feature size down to approximate to 1.5 mu m are demonstrated using red, green, and blue PEN inks. The patterned QD films maintain approximate to 75% of original PLQY and the electroluminescence characteristics of the patterned QLEDs are comparable to thopse of non-patterned control devices. The patterning mechanism is elucidated by in-depth investigation of the photochemical transformations of the photoacid generators and changes in the optical properties of the QDs at each patterning step. This advanced patterning method provides a new way for additive manufacturing of integrated optoelectronic devices using colloidal QDs.
Cho, Himchan↗
Synthesis, structure, and optoelectronic properties of II-IV-V 2 materials
II-IV-V 2 materials offer the promise of enhanced functionality in optoelectronic devices due to their rich ternary chemistry. In this review, we consider the potential for new optoelectronic devices based on nitride, phosphide, and arsenide II-IV-V 2 materials. As ternary analogs to the III-V materials, these compounds share many of the attractive features that have made the III-Vs the basis of modern optoelectronic devices (e.g. high mobility, strong optical absorption). Control of cation order parameter in the II-IV-V 2 materials can produce significant changes in optoelectronic properties at fixed chemical composition, including decoupling band gap from lattice parameter. Recent progress has begun to resolve outstanding questions concerning the structure, dopability, and optical properties of the II-IV-V 2 materials. Furthermore, remaining research challenges include growth optimization and integration into heterostructures and devices.
36 MATERIALS SCIENCE↗
Inverted organic photosensitive devices
The present disclosure relates to organic photosensitive optoelectronic devices grown in an inverted manner. An inverted organic photosensitive optoelectronic device of the present disclosure comprises a reflective electrode, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode on top of the donor-acceptor heterojunction.
36 MATERIALS SCIENCE↗
Inverted organic photosensitive devices
The present disclosure relates to organic photosensitive optoelectronic devices grown in an inverted manner. An inverted organic photosensitive optoelectronic device of the present disclosure comprises a reflective electrode, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode on top of the donor-acceptor heterojunction.
14 SOLAR ENERGY↗
Excitations Partition into Two Distinct Populations in Bulk Perovskites
Organolead halide perovskites convert optical excitations to charge carriers with remarkable efficiency in optoelectronic devices. Previous research predominantly documents dynamics in perovskite thin films; however, extensive disorder in this platform may obscure the observed carrier dynamics. Here, carrier dynamics in perovskite single-domain single crystals is examined by performing transient absorption spectroscopy in a transmissive geometry. Two distinct sets of carrier populations that coexist at the same radiation fluence, but display different decay dynamics, are observed: one dominated by second-order recombination and the other by third-order recombination. Based on ab initio simulations, this observation is found to be most consistent with the hypothesis that free carriers and localized carriers coexist due to polaron formation. The calculations suggest that polarons will form in both CH3NH3PbBr3 and CH3NH3PbI3 crystals, but that they are more pronounced in CH3NH3PbBr3. Single-crystal CH3NH3PbBr3 could represent the key to understanding the impact of polarons on the transport properties of perovskite optoelectronic devices.
bulk carrier dynamics↗
Multifunctional Optoelectronic-Spintronic Device Based on Hybrid Organometal Trihalide Perovskites
A novel “hybrid” optoelectronic–spintronic (O-S) device that contains an organometal trihalide perovskite (OTP)-based solar cell or light-emitting diode coupled to an inorganic spin valve is presented. The synergy between the OTP and spin valve components results in two new functionalities: nonlinear magnetophotoconductivity and hysteretic magnetoelectroluminescence.
36 MATERIALS SCIENCE↗
Wafer bonded epitaxial templates for silicon heterostructures
A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.
Atwater, Harry A., Jr.↗