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Advances in large-scale arrays of superconducting nanowire single-photon detectors
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Palladium Phthalocyanine Nanowire-Based Highly Sensitive Sensors for NO2(g) Detection
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Highly conductive and transparent coatings from flow-aligned silver nanowires with large electrical and optical anisotropy
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Intrinsically-limited timing jitter in molybdenum silicide superconducting nanowire single-photon detectors
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Controlled growth of vertical ZnO nanowires on copper substrate
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Nanoscale content-addressable memory
A combined content addressable memory device and memory interface is provided. The combined device and interface includes one or more one molecular wire crossbar memories having spaced-apart key nanowires, spaced-apart value nanowires adjacent to the key nanowires, and configurable switches between the key nanowires and the value nanowires. The combination further includes a key microwire-nanowire grid (key MNG) electrically connected to the spaced-apart key nanowires, and a value microwire-nanowire grid (value MNG) electrically connected to the spaced-apart value nanowires. A key or value MNGs selects multiple nanowires for a given key or value.
Nanoscale Metal Oxide Semiconductors for Gas Sensing
A report describes the fabrication and testing of nanoscale metal oxide semiconductors (MOSs) for gas and chemical sensing. This document examines the relationship between processing approaches and resulting sensor behavior. This is a core question related to a range of applications of nanotechnology and a number of different synthesis methods are discussed: thermal evaporation- condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed, providing a processing overview to developers of nanotechnology- based systems. The results of a significant amount of testing and comparison are also described. A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. The TECsynthesized single-crystal nanowires offer uniform crystal surfaces, resistance to sintering, and their synthesis may be done apart from the substrate. The TECproduced nanowire response is very low, even at the operating temperature of 200 C. In contrast, the electrospun polycrystalline nanofiber response is high, suggesting that junction potentials are superior to a continuous surface depletion layer as a transduction mechanism for chemisorption. Using a catalyst deposited upon the surface in the form of nanoparticles yields dramatic gains in sensitivity for both nanostructured, one-dimensional forms. For the nanowire materials, the response magnitude and response rate uniformly increase with increasing operating temperature. Such changes are interpreted in terms of accelerated surface diffusional processes, yielding greater access to chemisorbed oxygen species and faster dissociative chemisorption, respectively. Regardless of operating temperature, sensitivity of the nanofibers is a factor of 10 to 100 greater than that of nanowires with the same catalyst for the same test condition. In summary, nanostructure appears critical to governing the reactivity, as measured by electrical resistance of these SnO2 nanomaterials towards reducing gases. With regard to the sensitivity of the different nascent nanostructures, the electrospun nanofibers appear preferable
Thermocooling of GMR Sensors
A thermoelectrically cooled GMR sensor having a first thermoelectric layer with an array of nanowires, wherein the nanowires include a diameter of about 1 nanometer to about 1000 nanometers. A plurality of alternating layers of magnetic and nonmagnetic material are positioned over and extend the nanowires to form a GMR assembly. A second thermoelectric layer is positioned over the GMR assembly and extends the nanowires, such that the nanowires have a length of between about 100 nanometers and about 500 microns. Conductors are placed in contact with the first and second thermoelectric layers for connecting the thermoelectric layers to a voltage source.
Optimal and Local Connectivity Between Neuron and Synapse Array in the Quantum Dot/Silicon Brain
This innovation is used to connect between synapse and neuron arrays using nanowire in quantum dot and metal in CMOS (complementary metal oxide semiconductor) technology to enable the density of a brain-like connection in hardware. The hardware implementation combines three technologies: 1. Quantum dot and nanowire-based compact synaptic cell (50x50 sq nm) with inherently low parasitic capacitance (hence, low dynamic power approx.l0(exp -11) watts/synapse), 2. Neuron and learning circuits implemented in 50-nm CMOS technology, to be integrated with quantum dot and nanowire synapse, and 3. 3D stacking approach to achieve the overall numbers of high density O(10(exp 12)) synapses and O(10(exp 8)) neurons in the overall system. In a 1-sq cm of quantum dot layer sitting on a 50-nm CMOS layer, innovators were able to pack a 10(exp 6)-neuron and 10(exp 10)-synapse array; however, the constraint for the connection scheme is that each neuron will receive a non-identical 10(exp 4)-synapse set, including itself, via its efficacy of the connection. This is not a fully connected system where the 100x100 synapse array only has a 100-input data bus and 100-output data bus. Due to the data bus sharing, it poses a great challenge to have a complete connected system, and its constraint within the quantum dot and silicon wafer layer. For an effective connection scheme, there are three conditions to be met: 1. Local connection. 2. The nanowire should be connected locally, not globally from which it helps to maximize the data flow by sharing the same wire space location. 3. Each synapse can have an alternate summation line if needed (this option is doable based on the simple mask creation). The 10(exp 3)x10(exp 3)-neuron array was partitioned into a 10-block, 10(exp 2)x10(exp 3)-neuron array. This building block can be completely mapped within itself (10,000 synapses to a neuron).
Phase-Controlled Magnetic Mirror for Wavefront Correction
Typically, light interacts with matter via the electric field and interaction with weakly bound electrons. In a magnetic mirror, a patterned nanowire is fabricated over a metallic layer with a dielectric layer in between. Oscillation of the electrons in the nanowires in response to the magnetic field of incident photons causes a re-emission of photons and operation as a "magnetic mirror." By controlling the index of refraction in the dielectric layer using a local applied voltage, the phase of the emitted radiation can be controlled. This allows electrical modification of the reflected wavefront, resulting in a deformable mirror that can be used for wavefront control. Certain applications require wavefront quality in the few-nanometer regime, which is a major challenge for optical fabrication and alignment of mirrors or lenses. The use of a deformable magnetic mirror allows for a device with no moving parts that can modify the phase of incident light over many spatial scales, potentially with higher resolution than current approaches. Current deformable mirrors modify the incident wavefront by using nano-actuation of a substrate to physically bend the mirror to a desired shape. The purpose of the innovation is to modify the incident wavefront for the purpose of correction of fabrication and alignment-induced wavefront errors at the system level. The advanced degree of precision required for some applications such as gravity wave detection (LISA - Laser Interferometer Space Antenna) or planet finding (FKSI - Fourier-Kelvin Stellar Interferometer) requires wavefront control at the limits of the current state of the art. All the steps required to fabricate a magnetic mirror have been demonstrated. The modification is to apply a bias voltage to the dielectric layer so as to change the index of refraction and modify the phase of the reflected radiation. Light is reflected off the device and collected by a phase-sensing interferometer. The interferometer determines the initial wavefront of the device and fore optics. A wavefront correction is calculated, and voltage profile for each nanowire strip is determined. The voltage is applied, modifying the local index of refraction of the dielectric under the nanowire strip. This modifies the phase of the reflected light to allow wavefront correction.
Radiation Shielding System Using a Composite of Carbon Nanotubes Loaded with Electropolymers
Single-wall carbon nanotubes (SWCNTs) coated with a hydrogen-rich, electrically conducting polymer such as polyethylene, receive and dissipate a portion of incoming radiation pulse energy to electrical signals that are transmitted along the CNT axes, and are received at energy-dissipating terminals. In this innovation, an array of highly aligned nanowires is grown using a strong electric field or another suitable orientation procedure. Polyethylene (PE), polymethymlethacrylate (PMMA), or other electrically conducting polymer is spin-coated onto the SWCNTs with an average thickness of a few hundred nanometers to a few tenths of micrometers to form a PE/SWCNT composite. Alternatively, the polymer is spin-coated onto the nanowire array or an anodized alumina membrane (AAM) to form a PE/metal core shell structure, or PE can be electropolymerized using the SWCNTs or the metal nanowires as an electrode to form a PE/SWCNT core shell structure. The core shell structures can be extruded as anisotropic fibers. A monomer can be polymerized in the presence of SWCNTs to form highly cross-linked PE/SWCNT films. Alternatively, Pb colloid solution can be impregnated into a three-dimensional PE/SWCNT nanostructure to form a PW/SWCNT/Pb composite structure. A face-centered cubic (FCC) arrangement provides up to 12 interconnection channels connected to each core, with transverse channel dimensions up to 20 nm, with adequate mechanical compressive strength, and with an associated electrical conductivity of around 3 Seimens/cm for currents ranging from 0.01 to 10 mA. This threedimensional nanostructure is used as a host material to house appropriate radiation shielding material such as hydrogen- rich polymer/CNT structures, metal nanoparticles, and nanowires. Thicknesses of this material required to attenuate 10 percent, 50 percent, and 90 percent of an incident beam (gamma, X-ray, ultraviolet, neutron, proton, and electron) at energies in the range of 0 440 MeV are being determined, for example, by measuring fluence rate reduction. For example, a radiation field arrives first at an exposed surface of the innovation and produces an associated first electric field within the metal-like fingers of the three-dimensional nanostructure. This field is intensified near the exposed tips of the fingers, and this intensified field generates an intensified second electric field near the adjacent exposed tips of the coated CNSs. This generates an associated electrical current in the CNSs, and the associated electropolymer coating. The current is received by the second substrate transport component and is transported to the dissipation mechanism located contiguously to the second substrate.
Modeling Growth of Nanostructures in Plasmas
As semiconductor circuits shrink to CDs below 0.1 nm, it is becoming increasingly critical to replace and/or enhance existing technology with nanoscale structures, such as nanowires for interconnects. Nanowires grown in plasmas are strongly dependent on processing conditions, such as gas composition and substrate temperature. Growth occurs at specific sites, or step-edges, with the bulk growth rate of the nanowires determined from the equation of motion of the nucleating crystalline steps. Traditional front-tracking algorithms, such as string-based or level set methods, suffer either from numerical complications in higher spatial dimensions, or from difficulties in incorporating surface-intense physical and chemical phenomena. Phase field models have the robustness of the level set method, combined with the ability to implement surface-specific chemistry that is required to model crystal growth, although they do not necessarily directly solve for the advancing front location. We have adopted a phase field approach and will present results of the adatom density and step-growth location in time as a function of processing conditions, such as temperature and plasma gas composition.