Preliminary observations of the enhancement of superconducting current-carrying capacity in niobium through hydrogen treatment
Superconducting current carrying capacity of hydrogen treated niobium
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Superconducting current carrying capacity of hydrogen treated niobium
Niobium elastic constants tabulated for various temperatures, using RF pulse-echo method
Superconductivity of composite of fine niobium wire in copper, measuring critical temperature, transverse magnetic field, current density, etc
Density of six niobium spheres which are intended for use as rotors in superconducting gyroscope
Thermoelectric power in niobium-zirconium alloys noting phonon drag peak attenuation due to Zr solute addition at very low temperatures
Attenuation of ultrasonic waves in superconducting niobium
Corrosion mechanisms in niobium oxygen potassium system
Low magnetic field ultrasonic attenuation of impure superconducting niobium
Hall coefficient dependence on niobium monocarbide composition
Changes in ultrasonic attenuation of superconducting niobium at low magnetic fields, considering effects of low critical field impurity phases
Niobium and nickel as thermionic converter collector materials, comparing characteristics
A study has been done of microwave mixing at 20 GHz using the nonlinear (power dependent) resistance of thin niobium strips in the resistive state. Our experiments give evidence that electron-heating is the main cause of the nonlinear phenomenon. Also a detailed phenomenological theory for the determination of conversion properties is presented. This theory is capable of predicting the frequency-conversion loss rather accurately for arbitrary bias by examining the I-V-characteristic. Knowing the electron temperature relaxation time, and using parameters derived from the I-V-characteristic also allows us to predict the -3 dB IF bandwidth. Experimental results are in excellent agreement with the theoretical predictions. The requirements on the mode of operation and on the film parameters for minimizing the conversion loss (and even achieving conversion gain) are discussed in some detail. Our measurements demonstrate an intrinsic conversion loss as low as 1 dB. The maximum IF frequency defined for -3 dB drop in conversion gain, is about 80 MHz. Noise measurements indicate a device output noise temperature of about 50 K and SSB mixer noise temperature below 250 K. This type of mixer is considered very promising for use in low-noise heterodyne receivers at THz frequencies.
In response to the elevated-temperature and weight-reduction demands of modern aerospace applications, a novel oxide-dispersion-strengthened low-density niobium alloy (LDNb-ODS) was fabricated using laser powder bed fusion (L-PBF). To overcome powder procurement barriers, L-PBF feedstock was produced by blending commercial Nb521, Ti64, and Cr powder with Y2O3 nanoparticles via resonant acoustic mixing. Following L-PBF and a 1400°C vacuum heat treatment, the alloy achieved a density of 6.73 g/cc and a fine mean grain size of 4.62 µm stabilized by uniform ~30 nm yttria dispersoids. Microstructural analysis revealed a chemically inhomogeneous build with lack-of-fusion defects and a titanium (Ti) shift from a nominal 31.5 wt% in the starting powder blend to 24.8 wt% in the printed part due to preferential Ti loss during printing. Elevated-temperature tensile testing demonstrated that LDNb-ODS maintained a superior specific yield strength of 60-85 MPa/(g/cc) up to 800°C, outperforming nickel-based alloys Ni625, Ni230, and GRX-810. Between 870°C and 950°C, its specific strength surpassed both Ni718 and Ni625. In rapid stress-rupture testing at 1093°C and 20.7 MPa, uncoated LDNb-ODS survived 21.4 hours (a tenfold increase over legacy C-103) while an R512E silicide coating extended rupture life to 84.8 hours, confirming that oxidation accelerates low-stress failure. These findings demonstrate that additive manufacturing of LDNb-ODS provides a viable, lightweight alternative to nickel-based superalloys for high-temperature (>850°C) aerospace components.
Niobium (Nb) films have emerged as a crucial material in the development of superconducting qubits, which are key components in quantum computing technology. Here, this review provides a comprehensive examination of Nb films from a materials perspective, focusing on their intrinsic properties, fabrication methods/techniques, and their influence on qubit performance, particularly through surface and interface driven loss mechanisms. We discuss the key material properties that are essential for qubit operation. Various deposition techniques for Nb thin films, such as sputtering, evaporation, molecular beam epitaxy, and atomic layer deposition, are explored, alongside their impact on film quality, uniformity, and qubit performance. Additionally, the influence of surface roughness, thin-film thickness, and substrate materials on quantum coherence is analyzed. Challenges such as defects and material degradation in Nb films are reviewed, along with strategies to mitigate these issues. Finally, we present the latest advancements and future directions in Nb film research, including potential improvements to enhance qubit coherence and scalability for large-scale quantum computing systems. Ultimately, a deeper understanding of surface and interface phenomena is essential for pushing the limits of qubit performance and realizing next-generation quantum technologies.
Niobium polyoxometalates (Nb-POMs) form in alkaline media, which limits their use as ligands for acidic cations, particularly lanthanides and actinides. Metal-Nb-POM moieties have the potential for emergent and enhanced properties, based on strong complexation behavior and high stability of the resultant materials. Here, in this study, we probe interactions of lanthanides (Pr 3+ , Nd 3+ , Sm 3+ , Eu 3+ , Tb 3+ , Dy 3+ ) and actinides (Am 3+ , Cm 3+ ) with a Nb-POM [Nb 6 O 19 ] 8– (Nb 6 ) in alkaline media. Nb 6 , the most charge-dense Nb-POM, enhances f-element luminescence emission by up to × 10 6 , via Nb-POM-mediated sensitization. Lengthened emission lifetimes correlate with the release of the metal-cation hydration sphere, replaced by multidentate Nb-POMs. The Nb 6 –Ln(An) complexes resist carbonate and phosphate displacement, and Nb 6 –Ln(An) complexation is retained upon isolation of the solids from solution. Electrospray ionization mass spectrometry (ESI-MS) and Raman spectroscopy both indicate the formation of the unprecedented Peacock–Weakley Nb-POM ([LnIII(Nb 5 O 18 ) 2 ] 19- ) in addition to simple Nb 6 –Ln coordination complexes. Luminescence emission spectra support the presence of simple Nb 6 –Ln coordination complexes. Small-angle X-ray scattering (SAXS) evidence the formation of Ln-Nb-POM aggregates. This foundational investigation highlights the potential of Nb-POMs as metal–ligands at basic pH, with value-added properties including scaffolding extended materials and controlling light absorption and emission.
Niobium thin films are central to superconducting qubits, but their complex native oxides contribute significantly to microwave losses. A promising mitigation strategy is to suppress oxide formation using engineered thin-film encapsulation layers. Recent experiments have shown that ∼10 nm metallic overlayers on Nb capacitor films can improve the energy relaxation time T1 of transmon qubits. Here, we present a comparative study of Au-capped Nb films fabricated in situ by molecular beam epitaxy and ex situ by sequential deposition benchmarked against bare Nb films. Using complementary structural, chemical, and spectroscopic techniques, we correlate the interface quality with superconducting electronic properties of the Au surface. Low-temperature scanning tunneling spectroscopy (STS) provides spatially resolved quasiparticle density-of-states maps. While both Au-capped Nb samples exhibit large areas with uniform, fully gapped density of states, clear differences emerge between the two interfaces. Compared to in situ Nb-Au, ex situ Nb-Au exhibits a reduced induced superconducting gap, broadened coherence peak, and localized in-gap states, consistent with a residual NbxOy layer at the interface. Supported by complementary structural and chemical analyses, these findings demonstrate that STS directly links nanoscale superconducting properties to interface preparation, highlighting the importance of controlled in situ encapsulation for minimizing dissipation and improving quantum coherence.
Various applications—including brain-like computing and on-chip artificial vision—increasingly demand a combination of electronic and photonic techniques. However, integrating both approaches on a single chip is challenging, and solutions typically rely on disparate components with power-hungry signal conversions. Here, in this paper, we report electro-optical Mott neurons that combine visible light emission with electrical threshold switching, as well as neuron-like oscillations. The devices are based on thin films of sputtered niobium dioxide (NbO 2 ), a Mott insulator–metal transition material, operating at room temperature and emitting light that peaks around 810 nm. Operando measurements reveal an electronic origin to the light emission: charge carrier relaxation initiated by high-field transport in the NbO 2 . Our devices combine electrical and optical functions within a single material, thereby expanding the options available for future artificial intelligence hardware.
The temperature stability window of mesoporous niobium tungstates is improved by 500 °C using pore backfilling strategies with carbon precursors.