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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Characterization of ECRAM materials and devices

As the limits of Moore’s Law approaches, new computing paradigms are developing to breakthrough this bottleneck. One such computer architecture is neuromorphic computing, which models the brain. Electrochemical random-access memory (ECRAM) is a low power and energy efficient memory due to characteristics, such as in-memory compute, ion modulation of the channel conductance, and computation distribution with large scale array integration.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS1971

Material handling device Patent

Device which separates and screens particles of soil samples for vidicon viewing in vacuum and reduced gravity environments

Ritchie, D. G.↗
NASA NTRS1984

Ultrasonic and optical evaluation of surgical implant materials and devices. A durability study of pericardial bioprostheses

Laser Doppler Anemometry (LDA) and accelerated fatigue testing were used in an attempt to assess the durability of two cardiac value bioprostheses. The LDA system was used to monitor the function of the cardiac valves over time. This was done through flow characterization in an aortic flow chamber, designed to closely simulate in vivo conditions, both in the near vicinity (sinuses of valsalva region) and also somewhat downstream (aortic region) from the values. The accelerated fatigue tester was operated by opening and closing the valves at a rate of 1300 R.P.M., about 18 x the normal rate. The results from the two test valves indicate a definite change in the flow characteristics downstream from the valve after certain accelerated test intervals. The high velocity cross-sectional flow area seems to increase over time in use, causing a decrease in the peak velocity. The tissue became more flaccid in certain areas, and tears were apparent at about 9.4 million cycles for the Ionescu-Shiley valve and at 24 million cycles for the Carpentier-Edwards valve. The use of Doppler ultrasound as a technique for monitoring the function of bioprostheses over time in vivo is also discussed.

Schuster, P. R.↗
NASA NTRS1983

Sublimation measurements and analysis of high temperature thermoelectric materials and devices

High temperature thermoelectric device sublimation effects are compared for rare earth sulfides, selenides, and state-of-the-art Si-Ge alloys. Although rare earth calcogenides can potentially exhibit superior sublimation characteristics, the state-of-the-art Si-Ge alloy with silicon nitride sublimation-inhibitive coating has been tested to 1000 C. Attention is given to the ceramic electrolyte cells, forming within electrical and thermal insulation, which affect leakage conductance measurements in Si-Ge thermoelectric generators.

Shields, V.↗
NASA NTRS1991

Environmental test program for superconducting materials and devices

This report is divided into two parts. The first dealing with work involved with Clemson University and the second with the results from Westinghouse/Savannah River. Both areas of work involved low noise, low thermal conductivity superconducting grounding links used in the NASA-sponsored Spectroscopy of the Atmosphere using Far Infrared Emission (SAFIRE) Project. Clemson prepared the links from YBa2Cu3O(7-x) superconductor tape that was mounted on a printed circuit board and encapsulated with epoxy resin. The Clemson program includes temperature vs. resistance, liquid nitrogen immersion, water immersion, thermal cycling, humidity, and radiation testing. The evaluation of the links under a long term environmental test program is described. The Savannah River program includes gamma irradiation, vibration, and long-term evaluation. The progress made in these evaluations is discussed.

Haertling, Gene↗
NASA NTRS1997

Process and Radiation Induced Defects in Electronic Materials and Devices

Process and radiation induced defects are characterized by a variety of electrical techniques, including capacitance-voltage measurements and charge pumping. Separation of defect type into stacking faults, displacement damage, oxide traps, interface states, etc. and their related causes are discussed. The defects are then related to effects on device parameters. Silicon MOS technology is emphasized. Several reviews of radiation effects and silicon processing exist.

Washington, Kenneth↗
DOE OSTI2020

Methods for producing and using perovskite materials and devices therefrom

The present disclosure describes solution methods for manufacturing perovskite halide films for use in solar cells. The methods include the use of additives that facilitate the formation of transitory, intermediate films that are later transformed into the final target perovskite halide films, such that the final films provide improved physical characteristics and operational performance.

14 SOLAR ENERGY↗
DOE OSTI2022

Methods for producing and using perovskite materials and devices therefrom

The present disclosure describes solution methods for manufacturing perovskite halide films for use in solar cells. The methods include the use of additives that facilitate the formation of transitory, intermediate films that are later transformed into the final target perovskite halide films, such that the final films provide improved physical characteristics and operational performance.

Zhu, Kai↗
DOE OSTI2023

Organic electroluminescent materials and devices

A compound of Formula X wherein ring A is absent, or present and selected from a 5-membered or 6-membered, carbocyclic or heterocyclic ring, which is optionally substituted; ring B is absent, or present and selected from a 5-membered or 6-membered, carbocyclic or heterocyclic ring, which is optionally substituted; and at least one of ring A or ring B is present, and the hash line represents ring A fused to ring N—W 1 —W 3 and ring B fused to ring N—W 4 —W 6 ; W 1 , W 2 , W 3 , W 4 , W 5 , and W 6 are independently selected from CR 1 or N; Z is selected from CR Z or N; and Y is selected from a group consisting of C(R 2 ) 2 , B(R 2 ) 2 , Al(R 2 ) 2 , Si(R 2 ) 2 , and Ge(R 2 ) 2 . An optoelectronic device selected from the group consisting of a photovoltaic device, a photodetector device, a photosensitive device, and an OLED, the optoelectronic device including an organic layer that comprises a compound of Formula X. A consumer product that includes the optoelectronic device.

Thompson, Mark E.↗
DOE OSTI2023

Organic electroluminescent materials and devices

A compound of Formula X wherein ring A is absent, or present and selected from a 5-membered or 6-membered, carbocyclic or heterocyclic ring, which is optionally substituted; ring B is absent, or present and selected from a 5-membered or 6-membered, carbocyclic or heterocyclic ring, which is optionally substituted; and at least one of ring A or ring B is present, and the hash line represents ring A fused to ring N—W 1 —W 2 and ring B fused to ring N—W 3 —W 4 ; W 1 , W 2 , W 3 , W 4 , W 5 , and W 6 are independently selected from CR 1 or N; Z is selected from CR Z or N; and Y is selected from a group consisting of C(R 2 ) 2 , B(R 2 ) 2 , Al(R 2 ) 2 , Si(R 2 ) 2 , and Ge(R 2 ) 2 . An optoelectronic device selected from the group consisting of a photovoltaic device, a photodetector device, a photosensitive device, and an OLED, the optoelectronic device including an organic layer that comprises a compound of Formula X. A consumer product that includes the optoelectronic device.

Thompson, Mark E.↗
DOE OSTI2022

High Throughput Data-Driven Design of Laser-Crystallized 2D MoS 2 Chemical Sensors: A Demonstration for NO 2 Detection

High throughput characterization and processing techniques are becoming increasingly necessary to navigate multivariable, data-driven design challenges for sensors and electronic devices. For two-dimensional materials, device performance is highly dependent upon a vast array of material properties including the number of layers, lattice strain, carrier concentration, defect density, and grain structure. In this work, laser crystallization was used to locally pattern and transform hundreds of regions of amorphous MoS 2 thin films into 2D 2H-MoS 2 . Here a high throughput Raman spectroscopy approach was subsequently used to assess the process-dependent structural and compositional variations for each illuminated region, yielding over 6000 distinct nonresonant, resonant, and polarized Raman spectra. The rapid generation of a comprehensive library of structural and compositional data elucidated important trends between structure–property processing relationships involving laser-crystallized MoS 2 , including the relationships between grain size, grain orientation, and intrinsic strain. Moreover, extensive analysis of structure/property relationships allowed for intelligent design and evaluation of major contributions to device performance in MoS 2 chemical sensors. In particular, it is found that NO 2 sensor performance is strongly dependent on the orientation of the MoS 2 grains relative to the crystal plane.

36 MATERIALS SCIENCE↗