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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Cleaning chemistry of InSb(100) molecular beam epitaxy substrates

InSb has been used as a substrate for molecular beam epitaxy. For good epitaxial growth, a substrate surface which is smooth and clean on an atomic scale is required. Chemical cleaning procedures provide an oxide film to passivate the surface. This film is then desorbed by in situ heating. The material forming the film should, therefore, have a high vapor pressure at some temperature less than the substrate melting temperature. A chloride film appears to satisfy the latter requirement. The present investigation is, therefore, concerned with the formation of a chloride film rather than an oxide film. Carbon contamination has been found to cause problems in chemical cleaning procedures. The level of carbon contamination found in the case of chloride film formation, is therefore compared with the corresponding level observed in procedures using oxide films. It appears that a chloride film grown in connection with a short exposure time to a Cl2 plasma is preferable to other passivation films studied.

Vasquez, R. P.↗
DOE OSTI2026

Pyrolysis_Molecular_Beam_Mass_Spectrometry_Analysis_of_Specific_Switchgrass_Genotypes

Select natural variant switchgrass genotypes grown in Tifton, GA were analyzed by Pyrolysis-Molecular Beam Mass Spectrometry (Py-MBMS). Biomass was harvested, milled, several genotypes were analyzed with and without being destarched and extracted with ethanol prior to analysis (indicated with -DE if destarched and extracted). Py-MBMS analysis was conducted using approximately 4 mg of biomass and each sample was analyzed in duplicate. A Frontier PY2020 unit pyrolyzed samples at 500°C for 30 s in 80 µL deactivated stainless steel cups. An Extrel Super-Sonic MBMS Model Max 1000 was used to collect mass spectral data fromm/z30 to 450 at 17 eV and processed using Merlin Automation software (V3). Spectral ion intensities were normalized to the total ion chromatogram signal for each sample for analysis of spectral variance. Lignin content (wt %) was estimated based on relative responses from standards of known Klason lignin content using mean-normalized ion intensities ofm/z120, 124 (G), 137 (G), 138 (G), 150 (G), 152, 154 (S), 164 (G), 167 (S), 168 (S), 178 (G), 180, 181, 182 (S), 194 (S), 208 (S) and 210 (S) where G indicates guaiacyl-derived ions, S indicates syringyl-derived ions, and other ions either derive from other lignin monomers or multiple sources. Ratios of S and G lignin monomer units (S/G) were obtained by dividing the sum of S-based ions by the sum of G-based ions using mean-normalized ion intensities.

CBI↗
DOE OSTI2026

Pyrolysis_Molecular_Beam_Mass_Spectra_for_Standard_Biomass_Samples_and_Natural_Variants_of_Switchgrass_Grown_Under_Different_Conditions

This data consists of total ion chromatogram (TIC) normalized Pyrolysis-Molecular Beam Mass Spectrometry (py-MBMS) spectra collected to predict lignin content and lignin monomeric ratios for “Variation in Biomass Yield and Cell Wall Composition in Switchgrass Natural Variants Under Two Nitrogen Regimes” (https://doi.org/10.1007/s12155-025-10838-8).

09 BIOMASS FUELS↗
NASA NTRS1981

A 100 microsec, reliable, 10 Hz pulsed supersonic molecular beam source

A 10-Hz repetition rate, 100-microsec duration, reliable pulsed supersonic molecular beam source is described. Mechanical and electrical design of the pulsed valve are given in detail. Characteristics of the supersonic expansion obtained using coherent anti-Stokes Raman spectroscopy in acetylene are presented. They include pulse shape, gas rotational and translational cooling as a function of distance from the nozzle, clustering effects, and shock heating at the leading edge of the pulse.

Byer, R. L.↗
NASA NTRS1989

Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

Lin, T. L.↗
NASA NTRS1990

Fabrication of IrSi(3)/p-Si Schottky diodes by a molecular beam epitaxy technique

IrSi(3)/p-Si Schottky diodes have been fabricated by a molecular beam epitaxy technique at 630 C. Good surface morphology was observed for IrSi(3) layers grown at temperatures below 680 C, and an increasing tendency to form islands is observed in samples grown at higher temperatures. Good diode current-voltage characteristics were observed and Schottky barrier heights of 0.14-0.18 eV were determined by activation energy analysis and spectral response measurement.

Lin, T. L.↗
DOE OSTI2025

Evidence for In-Plane Electrical Polarization in 3R-β’-In 2 Se 3 Thin Films Grown by Molecular Beam Epitaxy

β-In 2 Se 3 has been identified as a potential ferroelectric. This work describes the growth of β-In 2 Se 3 via molecular beam epitaxy along with a description of its properties, including the search for switchable polarization in 3R-β’-In2Se3. The thin-film morphology, crystal structure, and phase maps of β-In 2 Se 3 on Si(111) and Al 2 O 3 (0001) were evaluated by atomic force microscopy, X-ray diffraction, and Raman spectroscopy as a function of the atomic Se/In flux ratio and growth temperature. Smooth β-In 2 Se 3 thin films were successfully realized on Si(111) at a substrate temperature of 150 °C using a Se/In flux ratio of 5.7, as well as on Al 2 O 3 (0001) at 450 °C using a Se/In flux ratio of 5.5. Scanning transmission electron microscopy (STEM) confirms the 3R polytype of β-In 2 Se 3 in films on both substrates, with a minor disorder associated with the 2H polytype at the interface. Indications of in-plane Se atom displacements characteristic of the 3R-β’-In 2 Se 3 polytype were found by STEM and second harmonic generation analysis in films on Al 2 O 3 (0001), but not in films on Si(111). Furthermore, attempts at electrical polarization switching did not produce compelling evidence for ferroelectricity. Instead, electrical transport measurements demonstrated locally varying anisotropic responses with the applied electric fields along different in-plane directions, with some hysteresis associated with the trapping of charges.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Elimination of remnant phases in low-temperature growth of wurtzite ScAlN by molecular-beam epitaxy

Growth of wurtzite ScxAl1−xN (x < 0.23) by plasma-assisted molecular-beam epitaxy on cplane GaN at high temperatures significantly alters the extracted lattice constants of the material due to defects likely associated with remnant phases. In contrast, ScAlN grown below a composition-dependent threshold temperature exhibits uniform alloy distribution, reduced defect density, and atomic-step surface morphology. The c-plane lattice constant of this low-temperature ScAlN varies with composition as expected from previous theoretical calculations and can be used to reliably estimate alloy composition. Moreover, lattice-matched Sc0.18Al0.82N/GaN multiquantum wells grown under these conditions display strong and narrow near-infrared intersubband absorption lines that confirm advantageous optical and electronic properties.

Dzuba, Brandon↗
NASA NTRS1983

Silicon sheet with molecular beam epitaxy for high efficiency solar cells

The capabilities of the new technique of Molecular Beam Epitaxy (MBE) are applied to the growth of high efficiency silicon solar cells. Because MBE can provide well controlled doping profiles of any desired arbitrary design, including doping profiles of such complexity as built-in surface fields or tandem junction cells, it would appear to be the ideal method for development of high efficiency solar cells. It was proposed that UCLA grow and characterize silicon films and p-n junctions of MBE to determine whether the high crystal quality needed for solar cells could be achieved.

Allen, F. G.↗
NASA NTRS1983

X-ray photoelectron spectroscopic study of the oxide removal mechanism of GaAs /100/ molecular beam epitaxial substrates in in situ heating

A standard cleaning procedure for GaAs (100) molecular beam epitaxial (MBE) substrates is a chemical treatment with a solution of H2SO4/H2O2/H2O, followed by in situ heating prior to MBE growth. X-ray photoelectron spectroscopic (XPS) studies of the surface following the chemical treatment show that the oxidized As is primarily As(+ 5). Upon heating to low temperatures (less than (350 C) the As(+ 5) oxidizes the substrate to form Ga2O3 and elemental As, and the As(+ 5) is reduced to As(+ 3) in the process. At higher temperatures (500 C), the As(+ 3) and elemental As desorb, while the Ga(+ 3) begins desorbing at about 600 C.

Vasquez, R. P.↗
DOE OSTI2026

Pyrolysis Molecular Beam Mass Spectrometry_Analysis_of_Natural_Variants_of_Poplulus_Trichocarpa_Leaves

Select leaves from natural variants of Poplar (Populus Trichocarpa) grown in a greenhouse at Oak Ridge National Laboratory were analyzed by Pyrolysis-Molecular Beam Mass Spectrometry (Py-MBMS). Leaves were harvested, cryomilled and kept frozen until analysis. Py-MBMS analysis was conducted using approximately 4 mg of biomass and each sample was analyzed in duplicate. A Frontier PY2020 unit pyrolyzed samples at 500°C for 30 s in 80 µL deactivated stainless steel cups. An Extrel Super-Sonic MBMS Model Max 1000 was used to collect mass spectral data fromm/z30 to 450 at 17 eV and processed using Merlin Automation software (V3). Spectral ion intensities were normalized to the total ion chromatogram signal for each sample for analysis of spectral variance. Lignin content (wt %) was estimated based on relative responses from standards of known Klason lignin content using mean-normalized ion intensities ofm/z120, 124 (G), 137 (G), 138 (G), 150 (G), 152, 154 (S), 164 (G), 167 (S), 168 (S), 178 (G), 180, 181, 182 (S), 194 (S), 208 (S) and 210 (S) where G indicates guaiacyl-derived ions, S indicates syringyl-derived ions, and other ions either derive from other lignin monomers or multiple sources. Ratios of S and G lignin monomer units (S/G) were obtained by dividing the sum of S-based ions by the sum of G-based ions using mean-normalized ion intensities.

CBI↗
NASA NTRS1985

Development of an apparatus for obtaining molecular beams in the energy range from 2 to 200 eV

The formation and detection of molecular beams obtained by charge exchange from a low-energy ion source is discussed. Dispersion in energy of the ion source was measured and problems concerning detection of neutral beams were studied. Various methods were used, specifically secondary electron emissivity of a metallic surface and ionization of a gas target with a low ionization voltage. The intensities of neutral beams as low as 10 eV are measured by a tubular electron multiplier and a lock-in amplifier.

Clapier, R.↗
NASA NTRS1988

Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament

Carbon doping of GaAs grown by molecular beam epitaxy has been obtained for the first time by use of a heated graphite filament. Controlled carbon acceptor concentrations over the range of 10 to the 17th-10 to the 20th/cu cm were achieved by resistively heating a graphite filament with a direct current power supply. Capacitance-voltage, p/n junction and secondary-ion mass spectrometry measurements indicate that there is negligible diffusion of carbon during growth and with postgrowth rapid thermal annealing. Carbon was used for p-type doping in the base of Npn AlGaAs/GaAs heterojunction bipolar transistors. Current gains greater than 100 and near-ideal emitter heterojunctions were obtained in transistors with a carbon base doping of 1 x 10 to the 19th/cu cm. These preliminary results indicate that carbon doping from a solid graphite source may be an attractive substitute for beryllium, which is known to have a relatively high diffusion coefficient in GaAs.

Malik, R. J.↗