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A low cost, portable instrument has been developed with which emittance can be measured by comparison to a standard. A reflector collects infra-red radiation from a heated sample onto a low mass, black detector and the temperature rise of the black detector is measured with a thermocouple and meter. Graphical examples are presented for determination of emittance from measurements made on a sample at any known temperature.
The high-resolution infrared radiation sounder (HIRS/2) was developed and flown on the Television and Infrared Observation Satellite, N Series (TIROS-N) as one means of obtaining atmospheric vertical profile information. The HIRS/2 receives visible and infrared spectrum radiation through a single telescope and selects 20 narrow spectral channels by means of a rotating filter wheel. A passive radiant cooler provides an operating temperature of 106.7K for the HgCdTe and InSb detectors while the visible detector operates at instrument frame temperature. Low noise amplifiers and digital processing provide 13 bit data for spacecraft data multiplexing and transmission. The qualities of system performance that determine sounding capability are the dynamic range of data collection, the noise equivalent radiance of the system, the registration of the air columns sampled in each channel, and the ability to upgrade the calibration of the instrument to maintain the performance standard throughout life. The basic performance of the instrument in test is described. Early orbital information from the TIROS-N launched on October 13, 1978 are given and some observations on system quality are made.
The High Resolution Infrared Radiation Sounder (HIRS/2) was developed and flown on the TIROS-N satellite as one means of obtaining atmospheric vertical profile information. The HIRS/2 receives visible and infrared spectrum radiation through a single telescope and selects 20 narrow radiation channels by means of a rotating filter wheel. A passive radiant cooler provides an operating temperature of 106.7 K for the HgCdTe and InSb detectors while the visible detector operates at instrument frame temperature. Low noise amplifiers and digital processing provide 13 bit data for spacecraft data multiplexing and transmission. The qualities of system performance that determine sounding capability are the dynamic range of data collection, the noise equivalent radiance of the system, the registration of the air columns sampled in each channel and the ability to upgrade the calibration of the instrument to maintain the performance standard throughout life. The basic features, operating characteristics and performance of the instrument in test are described. Early orbital information from the TIROS-N launched on October 13, 1978 is given and some observations on system quality are made.
The peak of the solar energy distribution occurs at visual wavelengths and falls off rapidly in the infrared. This fact, improvements in infrared detector technology, and the low surface temperatures for most icy objects in the outer solar system have resulted in the bulk of telescopic and spacecraft observations being performed at visual and near-infrared wavelengths. Such observations, begun in the early 1970's and continuing to present, have provided compositional information regarding the surfaces of the satellites of Saturn and Uranus, Neptune's moon Triton, Pluto, Pluto's moon Charon, Centaur objects, and Kuiper belt objects. Because the incident sunlight penetrates the surface and interacts with the materials present there, the measured reflected sunlight contains information regarding the surface materials, and the ratio of the reflected to incident sunlight provides a mechanism of identifying the materials that are present.
The peak of the solar energy distribution occurs at visual wavelengths and falls off rapidly in the infrared. This fact, improvements in infrared detector technology, and the low surface temperatures for most icy objects in the outer solar system have resulted in the bulk of telescopic and spacecraft observations being performed at visual and near-infrared wavelengths. Such observations, begun in the early 1970's and continuing to present, have provided compositional information regarding the surfaces of the satellites of Saturn and Uranus, Neptune's moon Triton, Pluto, Pluto's moon Charon, Centaur objects, and Kuiper belt objects. Because the incident sunlight penetrates the surface and interacts with the materials present there, the measured reflected sunlight contains information regarding the surface materials, and the ratio of the reflected to incident sunlight provides a mechanism of identifying the materials that are present.
Measurements have been made of the signal and noise characteristics of extrinsic photoconductive silicon detectors. The measurements were made at several background levels, bias voltages and detector operating temperatures. Data are shown at modulation frequencies as low as 0.01 Hz, operating temperatures as low as 2.5K and background photon flux densities down to 8 x 10 to the 7th photons/sec-sq cm. Data on the temporal characteristics of the detector signal are presented. In addition, some interesting data on 'spontaneous noise spikes' are also shown.
Cryogenic MOSFETS (CRYOFETS), specifically designed for low temperature preamplifier application with infrared extrinsic detectors were produced and comparatively tested with p-channel MOSFETs under matched conditions. The CRYOFETs exhibit lower voltage thresholds, high source-follower gains at lower bias voltage, and lower dc offset source voltage. The noise of the CRYOFET is found to be 2 to 4 times greater than the MOSFET with a correspondingly lower figure of merit (which is established for source-follower amplifiers). The device power dissipation at a gain of 0.98 is some two orders of magnitude lower than for the MOSFET. Further, CRYOFETs are free of low temperature I vs V character hysteresis and balky conduction turn-on effects and operate effectively in the 2.4 to 20 K range. These devices have promise for use on long term duration sensor missions and for on-focal-plane signal processing at low temperatures.
Because of its high atomic number, room temperature operation, low noise, and high spatial resolution a Cadmium-Zinc-Telluride (CZT) multi-pixel detector is ideal for hard x-ray astrophysical observation. As part of on-going research at MSFC (Marshall Space Flight Center) to develop multi-pixel CdZnTe detectors for this purpose, we have measured charge sharing and charge loss for a 4x4 (750micron pitch), lmm thick pixel array and modeled these results using a Monte-Carlo simulation. This model was then used to predict the amount of charge sharing for a much finer pixel array (with a 300micron pitch). Future work will enable us to compare the simulated results for the finer array to measured values.
A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.
An analysis of different preamplification systems for use with room temperature mercuric iodide X-ray detectors has been performed. Resistor-, drain-, and light-feedback preamplifiers have been studied. Energy resolution values of 295 eV (FWHM) for an Fe-55 source (5.9 keV) and 225 eV (FWHM) for a pulser have been obtained with both the detector and the input FET at room temperature using a pulsed-light feedback preamplifier. Improvement in energy resolution by cooling the input FET using a small Peltier element has been discussed.
This design constitutes a self-resetting (gain quenching), room-temperature operational semiconductor single-photon-sensitive detector that is sensitive to telecommunications optical wavelengths and is scalable to large areas (millimeter diameter) with high bandwidth and efficiencies. The device can detect single photons at a 1,550-nm wavelength at a gain of 1 x 10(exp 6). Unlike conventional single photon avalanche detectors (SPADs), where gain is an extremely sensitive function to the bias voltage, the multiplication gain of this device is stable at 1 x 10(exp 6) over a wide range of bias from 30.2 to 30.9 V. Here, the multiplication gain is defined as the total number of charge carriers contained in one output pulse that is triggered by the absorption of a single photon. The statistics of magnitude of output signals also shows that the device has a very narrow pulse height distribution, which demonstrates a greatly suppressed gain fluctuation. From the histograms of both pulse height and pulse charge, the equivalent gain variance (excess noise) is between 1.001 and 1.007 at a gain of 1 x 10(exp 6). With these advantages, the device holds promise to function as a PMT-like photon counter at a 1,550- nm wavelength. The epitaxial layer structure of the device allows photons to be absorbed in the InGaAs layer, generating electron/hole (e-h) pairs. Driven by an electrical field in InGaAs, electrons are collected at the anode while holes reach the multiplication region (InAlAs p-i-n structure) and trigger the avalanche process. As a result, a large number of e-h pairs are created, and the holes move toward the cathode. Holes created by the avalanche process gain large kinetic energy through the electric field, and are considered hot. These hot holes are cooled as they travel across a p -InAlAs low field region, and are eventually blocked by energy barriers formed by the InGaAsP/ InAlAs heterojunctions. The composition of the InGaAsP alloy was chosen to have an 80 meV valance band offset with InAlAs, which is high enough to hinder the transport of the already cooled holes. Being stopped by the energy barrier, holes are accumulated at the junctions to shield the electric field, resulting in a decrease of the electric field in the multiplication region. Because the impact ionization rate is extremely sensitive to the magnitude of the electric field, the field-screening effect drastically reduces the impact ionization rate and quenches the output signals. After the avalanche pulse signal is self-quenched, the accumulated holes at the InGaAsP/ InAlAs interface escape the energy barrier through thermal excitation and tunneling and finally leave the device. The device is thus reset and ready for subsequent photon detection. This recovery time is controlled by the height of the energy barrier and the hole-cooling rate.
The development of a large, far-infrared telescope in space has taken on a new urgency with breakthroughs in detector technology and recognition of the fundamental importance of the far-infrared spectral region to questions ranging from cosmology to our own Solar System. The Single Aperture Far-InfraRed (SAFIR) Observatory is l0m-class far-infrared observatory that would begin development later in this decade to meet these needs. SAFIR's science goals are driven by the fact that youngest stages of almost all phenomena in the universe are shrouded in absorption by and emission from cool dust that emits strongly in the far-infrared, 20 microns - 1mm. Its operating temperature (4 K) and instrument complement would be optimized to reach the natural sky confusion limit in the far-infrared with diffraction-limited performance down to at least the atmospheric cutoff at 40 microns. This would provide a point source sensitivity improvement of several orders of magnitude over that of SIRTF. In order to achieve this, large arrays of detectors with NEPs ranging from a few to a hundred zeptowatts/sqrt(Hz) are needed. Very low temperature superconducting transition edge sensors and far-infrared "photon counting" detectors are critical technologies requiring development for the SAFIR mission.
Bolometers operating at low temperatures (T greater than 0.3 K) are the best candidate for far infrared (lambda greater than or = 120 microns) and submillimeter detection from cold orbiting telescopes. The limits of sensitivity for such devices have been studied (Mather, 1983). Based on this work, we conclude that excellent sensitivity is possible given careful detector design. We have designed and are fabricating bolometers for operation at low temperatures. The crucial components in detector design are (1) heat capacity, (2) temperature sensing, and (3) absorption of infrared radiation. In this presentation, we discuss the choice of materials and fabrication techniques we have made in the interest of maximum sensitivity. In order that optimization of detector performance be reasonably easy to carry out, we have attempted to use conventional fabrication techniques wherever possible (photolithography, wire bonding). The use of such procedures allows us to make design changes on short time scales, which is essential in achieving optimal performance.
We present the design of a Time-to-Digital Converter (TDC) ASIC together with performance characterization results at cryogenic temperature (6-8 K), and at room temperature using emulated Low-Gain Avalanche Detector (LGAD) signals. The TDC design uses a two-step architecture with a ring-oscillator based counter and a Vernier delay line fine TDC. The TDC is implemented in an FD-SOI process, and back-gate tuning is used not only to correct threshold variation due to cryogenic operation, but also as a novel way to tune TDC delay elements with very little overhead. Using this technique, we demonstrate a design with very low power (0.5 mW) and area (0.003 mm 2 ). We present test results using the Fermilab Constant Fraction Discriminator (FCFD) ASIC to produce discriminated signals from an internal charge injection mechanism that mimics the waveform and signal amplitude of minimum ionizing particles impinging on LGAD sensors. We characterize the time precision of the full system and verify that the TDC ASIC contributes a negligible amount to the total system time precision, fully consistent with the expected jitter contribution of less than 5 ps. In conclusion, the results presented here demonstrate the utility of our TDC for applications in physics and quantum communications.
The next generation of astrophysics instruments will feature an order of magnitude more photon sensors or sensors that have an order of magnitude greater sensitivity. Since detector noise scales with temperature, a number of candidate technologies have been developed that use the intrinsic advantages of detector systems that operate below 1 Kelvin. Many of these systems employ of the superconducting phenomena that occur in metals at these temperatures to build ultrasensitive detectors and low-noise, low-power readout architectures. I will present one such system in use today to meet the needs of the astrophysics community at millimeter and x-ray wavelengths. Our group at NASA in collaboration with Princeton, NIST, Boulder and a number of other groups is building large format arrays of superconducting transition edge sensors (TES) read out with multiplexed superconducting quantum interference devices (SQUID). I will present the high sensitivity we have achieved in multiplexed x-ray sensors with the TES technology and describe the construction of a 1000-sensor TES/SQUID array for microwave measurements. With our collaboration's deployment of a kilopixel TES array for 2 mm radiation at the Atacarna Cosmology Telescope in November 2007, we have first images of the lensed Cosmic Microwave Background at fine angular scales.
A proposed method of suppressing the effect of background noise in an optical communication system would exploit the transmission and reception of correlated photons at the receiver. The method would not afford any advantage in a system in which performance is limited by shot noise. However, if the performance of the system is limited by background noise (e.g., sunlight in the case of a free-space optical communication system or incoherently scattered in-band photons in the case of a fiber-optic communication system), then the proposed method could offer an advantage: the proposed method would make it possible to achieve a signal-to-noise ratio (S/N) significantly greater than that of an otherwise equivalent background- noise-limited optical communication system based on the classical transmission and reception of uncorrelated photons. The figure schematically depicts a classical optical-communication system and a system according to the proposed method. In the classical system, a modulated laser beam is transmitted along an optical path to a receiver, the optics of which include a narrow-band-pass filter that suppresses some of the background noise. A photodetector in the receiver detects the laser-beam and background photons, most or all of which are uncorrelated. In the proposed system, correlated photons would be generated at the transmitter by making a modulated laser beam pass through a nonlinear parametric down-conversion crystal. The sum of frequencies of the correlated photons in each pair would equal the frequency of the incident photon from which they were generated. As in the classical system, the correlated photons would travel along an optical path to a receiver, where they would be band-pass filtered and detected. Unlike in the classical system, the photodetector in the receiver in this system would be one that intrinsically favors the detection of pairs of correlated photons over the detection of uncorrelated photons. Even though there would be no way of knowing the precise location and time of creation of a given pair of correlated signal photons in the nonlinear down-conversion crystal, the fact that the photons are necessarily created at the same time and place makes it possible to utilize conventional geometrical imaging optics to reunite the photons in coincidence in the receiving photodetector. Because most or all of the signal photons would be correlated while most or all of the noise photons would be uncorrelated, the S/N would be correspondingly enhanced in the photodetector output. An additional advantage to be gained by use of a correlated-photon detector is that it could be capable of recovering the signal even in the presence of background light so bright that a classical uncorrelated-photon detector would be saturated. A blocked-impurity-band (BIB) photodetector that preferentially detects pairs of correlated photons over uncorrelated ones and that operates at a quantum efficiency of 88 percent is commercially available. This detector must be cooled to the temperature of liquid helium to obtain the desired low-noise performance. It is planned to use this detector in a proof-of-principle demonstration. In addition, it may be possible to develop GaN-based photodetectors that could offer the desired low-noise performance at room temperature.
At sub-Kelvin temperatures, two-level systems (TLSs) present in amorphous dielectrics source a permittivity noise, degrading the performance of a wide range of devices using superconductive resonators such as qubits or kinetic inductance detectors. We report here on measurements of TLS noise in hydrogenated amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor deposition in superconductive lumped element resonators using parallel-plate capacitors. In conclusion, the TLS noise results presented in this article for two recipes of a-Si:H improve on the best results achieved in the literature by a factor >5 for a-Si:H and other amorphous dielectrics and are comparable to those observed for resonators deposited on crystalline dielectrics.