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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Color Maintenance of LEDs in Laboratory and Field Applications

Synopsis: To date, consideration for parametric failure of LED products has largely been focused on lumen maintenance. However, color shift is a cause of early failure for some products, and is especially important to consider in certain applications, like museums, where visual appearance is critical. Example data collected by the GATEWAY program for LED lamps installed in museums shows that many have changed color beyond a reasonable tolerance well before their rated lifetime was reached, necessitating replacement. Similar data collected by the CALiPER program between 2008 and 2010 reveals that many early products shifted beyond acceptable tolerances in as little as a few thousand hours. In contrast, data from the L Prize program illustrates that commercially available LED products can have exemplary color stability that is unmatched by traditional light sources. Beyond presenting data from the aforementioned DOE programs, this report discusses the metrics used for communicating color shift—namely MacAdam ellipses and Δu'v'—as well as providing guidance for end users on how to monitor color shift and what to look for in manufacturer warranties. Also included are descriptions of the physical changes that have been documented as leading to color shift in some example types of LED packages. As with complete products, the data presented herein for LED packages shows that a wide variety of products are available; in order for specifiers and consumers to make educated choices, more detailed and standardized information should be made available.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2014

DOE CALiPER Program Report 21.2: Linear (T8) LED Lamp Performance in Five Types of Recessed Troffers

Although lensed troffers are numerous, there are many other types of optical systems as well. This report looked at the performance of three linear (T8) LED lamps chosen primarily based on their luminous intensity distributions (narrow, medium, and wide beam angles) as well as a benchmark fluorescent lamp in five different troffer types. Also included are the results of a subjective evaluation. Results show that linear (T8) LED lamps can improve luminaire efficiency in K12-lensed and parabolic-louvered troffers, effect little change in volumetric and high-performance diffuse-lensed type luminaires, but reduce efficiency in recessed indirect troffers. These changes can be accompanied by visual appearance and visual comfort consequences, especially when LED lamps with clear lenses and narrow distributions are installed. Linear (T8) LED lamps with diffuse apertures exhibited wider beam angles, performed more similarly to fluorescent lamps, and received better ratings from observers. Guidance is provided on which luminaires are the best candidates for retrofitting with linear (T8) LED lamps.

CALiPER↗
DOE OSTI2014

Application Summary Report 22: LED MR16 Lamps

This report analyzes the independently tested photometric performance of 27 LED MR16 lamps. It describes initial performance based on light output, efficacy, distribution, color quality, electrical characteristics, and form factor, with comparisons to a selection of benchmark halogen MR16s and ENERGY STAR qualification thresholds. Three types of products were targeted. First, CALiPER sought 3000 K lamps with the highest rated lumen output (i.e., at least 500 lm) or a claim of equivalency to a 50 W halogen MR16 or higher. The test results indicate that while the initial performance of LED MR16s has improved across the board, market-available products still do not produce the lumen output and center beam intensity of typical 50 W halogen MR16 lamps. In fact, most of the 18 lamps in this category had lower lumen output and center beam intensity than a typical 35 W halogen MR16 lamp. Second, CALiPER sought lamps with a CRI of 90 or greater. Only four manufacturers were identified with a product in this category. CALiPER testing confirmed the performance of these lamps, which are a good option for applications where high color fidelity is needed. A vast majority of the LED MR16 lamps have a CRI in the low 80s; this is generally acceptable for ambient lighting, but may not always be acceptable for focal lighting. For typical LED packages, there is a fundamental tradeoff between CRI and efficacy, but the lamps in the high-CRI group in this report still offer comparable performance to the rest of the Series 22 products in other performance areas. Finally, CALiPER sought lamps with a narrow distribution, denoted as a beam angle less than 15°. Five such lamps were purchased. Notably, no lamp was identified as having high lumen output (500 lumens or greater), high CRI (90 or greater), a narrow distribution (15° or less), and an efficacy greater than 60 lm/W. This would be an important achievement for LED MR16s especially if output could reach approximately 700 800 lumens, or the approximate equivalent of a 50 W halogen MR16 lamp. Many factors beyond photometric performance should be considered during specification. For example, performance over time, transformer and dimmer compatibility, and total system performance are all critical to a successful installation. Subsequent CALiPER reports will investigate more complex issues.

CALiPER↗
DOE OSTI2014

CALiPER Report 21.2: Linear (T8) LED Lamp Performance in Five Types of Recessed Troffers

Although lensed troffers are numerous, there are many other types of optical systems as well. This report looks at the performance of three linear (T8) LED lamps—chosen primarily based on their luminous intensity distributions (narrow, medium, and wide beam angles)—as well as a benchmark fluorescent lamp in five different troffer types. Also included are the results of a subjective evaluation. Results show that linear (T8) LED lamps can improve luminaire efficiency in K12-lensed and parabolic-louvered troffers, effect little change in volumetric and high-performance diffuse-lensed type luminaires, but reduce efficiency in recessed indirect troffers. These changes can be accompanied by visual appearance and visual comfort consequences, especially when LED lamps with clear lenses and narrow distributions are installed. Linear (T8) LED lamps with diffuse apertures exhibited wider beam angles, performed more similarly to fluorescent lamps, and received better ratings from observers. Guidance is provided on which luminaires are the best candidates for retrofitting with linear (T8) LED lamps.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2017

Materials and Designs for High-Efficacy LED Light Engines

Cree, Inc. conducted a narrow-band downconverter (NBD) materials development and implementation program which will lead to warm-white LED light engines with enhanced efficacy via improved spectral efficiency with respect to the human eye response. New red (600-630nm) NBD materials could result in as much as a 20% improvement in warm-white efficacy at high color quality relative to conventional phosphor-based light sources. Key program innovations included: high quantum yield; narrow peak width; minimized component-level losses due to “cross-talk” and light scattering among red and yellow-green downconverters; and improved reliability to reach parity with conventional phosphors. NBD-enabled downconversion efficiency gains relative to conventional phosphors yielded an end-of-project LED light engine efficacy of >160 lm/W at room temperature and 35 A/cm2, with a correlated color temperature (CCT) of ~3500K and >90 CRI (Color Rending Index). NBD-LED light engines exhibited equivalent luminous flux and color point maintenance at >1,000 hrs. of highly accelerated reliability testing as conventional phosphor LEDs. A demonstration luminaire utilizing an NBD-based LED light engine had a steady-state system efficacy of >150 lm/W at ~3500K and >90 CRI, which exceeded the 2014 DOE R&D Plan luminaire milestone for FY17 of >150 lm/W at just 80 CRI.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2024

Scalable Thin Light-Emitting Diode (LED) Light Sheet Platform

The goal of the Scalable Thin Light-Emitting Diode (LED) Light Sheet Platform project is to derisk the manufacturing scalability for a high chip count heterogeneous smart lighting platform, with the potential to enable significant energy savings through dynamic directional light control and custom. Specifically, the project derisks the scalability of a disruptive new computer controlled microassembly fabrication process SRI International is developing, to address fundamental cost barriers to mass production of high chip count systems. This is key for enabling mass adoption and thus maximum societal energy savings impact. The LED light sheet technology is a smart illumination platform that can be applied to lighting, signage, and display. It has features and a form factor similar to bendable or conformal OLED light sheets but uses more efficient LEDs with a remote phosphor layer that is very close to the LED to deliver a luminous efficacy that exceeds 125 lumen/Watt and enable > 50% Lighting Application Efficiency (LAE) energy savings. During Budget Period 1 (BP1), all of the BP1 milestones were successfully completed: (M2.0.1) Design demonstrator details that will meet the final project goals, (M6.1.1) Show lighting output model can predict illuminance, spatial, spectral distribution for specific light-sheet designs and use case, (M3.2.1) Automated loading supports 200 chip arrays, and (M3.3.1) Finish first interconnect process run for 200 chip array. The BP1 Go/No-Go Decision Point (G/NG 1) 200 chip demonstrator sample was in the process of final assembly and test at the end of BP1 on December 31, 2023. The objective was successfully achieved on January 16, 2024, when a wired 200-chip sample underwent confirmation testing that demonstrated a 93.75% first pass electrical yield that successfully exceeded the 75% first-pass electrical yield BP1 G/NG requirement. In addition, all 93.75% of the sample devices lit up, further demonstrating the ability to assemble and transfer small LED chips without damaging their functionality.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2013

LEDS Global Partnership in Action: Advancing Climate-Resilient Low Emission Development Around the World [Fact Sheet]

Many countries around the globe are designing and implementing low emission development strategies (LEDS). These LEDS seek to achieve social, economic, and environmental development goals while reducing long-term greenhouse gas (GHG) emissions and increasing resiliency to climate change impacts. The LEDS Global Partnership (LEDS GP) harnesses the collective knowledge and resources of more than 120 countries and international donor and technical organizations to strengthen climate-resilient low emission development efforts around the world.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates

In this paper, we experimentally investigated the role of V-defect density on the performance of green III-nitride LEDs grown on sapphire substrates by metalorganic chemical vapor deposition. We systematically varied the threading dislocation (TD) density from 4 × 10 8 to 1 × 10 9 cm -2 by changing the V/III ratio during initial high temperature GaN growth. A 30-period InGaN/GaN superlattice promoted V-defect formation and growth at TDs, where the density of V-defects was correlated to the TD density. By interrupting the LED growth and examining the surface of the active region, we quantified the average size and density of V-defects. In a series of LEDs, we measured a systematic decrease in forward voltage (V F ) with V-defect density. At a V-defect density of 5.0 × 10 8 cm -2 and TD density of 1 × 10 9 cm -2 , green LED devices were demonstrated with λ = 523 nm and V F = 2.94 V at 20 A cm -2 . These results highlight the potential of using V-defect engineering to achieve low V F long wavelength LEDs on sapphire substrates, where opening of remaining threading dislocations into V-defects presents an opportunity for further V F reduction.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Graphitic carbon nitride nanosheets as highly efficient photocatalysts for phenol degradation under high-power visible LED irradiation

Highlights: • Bulk g-C{sub 3}N{sub 4} and its exfoliated form have been synthesized at different temperatures and characterized in detail. • Exfoliation proces increased oxidizing power of holes and enabled direct phenol degradation. • High-power visible LEDs improved significantly photocatalytic production of H{sub 2}O{sub 2} over exfoliated g-C{sub 3}N{sub 4}. • Synergistic effect between LEDs and exfoliated g-C{sub 3}N{sub 4} materials was observed. - Abstract: Exfoliated g-C{sub 3}N{sub 4} materials were prepared by thermal treatment of bulk materials synthesized from melamine at 4 different temperatures in range from 500 to 600 °C. The exfoliated g-C{sub 3}N{sub 4} synergically increased the photocatalytic degradation of phenol as effects like the fast production of H{sub 2}O{sub 2}, the presence of more active holes for direct phenol degradation and the use of high-power visible (416 nm) LEDs as irradiation source. The amount of phenol initially present was 99% converted in 15 min. All materials were also tested for comparison only in UVA region by using high-power UV (370 nm) LEDs. All prepared materials were thoroughly characterized by several analytical methods. In this work, the combination of g-C{sub 3}N{sub 4} after thermal treatment and high-power visible LEDs reduced the time needed for complete phenol degradation from several hours to just a few minutes. The mechanism of phenol degradation was also studied by introducing different active species scavengers into the reaction medium.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10{sup −30} cm{sup 6}/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary attempt at uncertainty quantification confirms, beyond the present case, the need for an improved description of carrier transport and microscopic radiative and nonradiative recombination mechanisms in device-level LED numerical models.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes [Detection and modeling of leakage current in AlGaN-based UV LEDs]

Current-voltage (IV) characteristics of two AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) with differing densities of open-core threading dislocations (nanopipes) are analyzed. A three-diode circuit is simulated to emulate the forward-bias IV characteristics of the DUV-LEDs, but is only able to accurately model the lower leakage current, lower nanopipe density DUV-LED. It was found that current leakage through the nanopipes in these structures is rectifying, despite nanopipes being previously established as inherently n-type. Using defect-sensitive etching, the nanopipes are revealed to terminate within the p-type GaN capping layer of the DUV-LEDs. As a result, the circuit model is modified to account for another p-n junction between the n-type nanopipes and the p-type GaN, and an excellent fit to the forward-bias IV characteristics of the leaky DUV-LED is achieved.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

White LEDs with limit luminous efficacy

In most promising widespread gallium nitride based LEDs emission is generated in the blue spectral region with a maximum at about 450 nm which is converted to visible light with the desired spectrum by means of phosphor. The thermal energy in the conversion is determined by the difference in the energies of excitation and emission quanta and the phosphor quantum yield. Heat losses manifest themselves as decrease in the luminous efficacy. LED heating significantly reduces its efficiency and life. In addition, while heating, the emission generation output and the efficiency of the emission conversion decrease. Therefore, the reduction of the energy losses caused by heating is crucial for LED development. In this paper, heat losses in phosphor-converted LEDs (hereinafter chips) during spectrum conversion are estimated. The limit values of the luminous efficacy for white LEDs are evaluated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Growth of monolithic full-color GaN-based LED with intermediate carrier blocking layers

Specially designed intermediate carrier blocking layers (ICBLs) in multi-active regions of III-nitride LEDs were shown to be effective in controlling the carrier injection distribution across the active regions. In principle, the majority of carriers, both holes and electrons, can be guided into targeted quantum wells and recombine to generate light of specific wavelengths at controlled current-densities. Accordingly we proposed and demonstrated a novel monolithic InGaN-based LED to achieve three primary colors of light from one device at selected current densities. This LED structure, which has three different sets of quantum wells separated with ICBLs for three primary red-green-blue (RGB) colors, was grown by metal-organic chemical vapor deposition (MOCVD). Results show that this LED can emit light ranging from 460 to 650 nm to cover the entire visible spectrum. The emission wavelength starts at 650 nm and then decreases to 460 nm or lower as the injection current increases. In addition to three primary colors, many other colors can be obtained by color mixing techniques. To the best of our knowledge, this is the first demonstration of monolithic full-color LED grown by a simple growth technique without using re-growth process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Fully Transparent GaN Homojunction Tunnel Junction-Enabled Cascaded Blue LEDs.

A sidewall activation process was optimized for buried magnesium-doped p-GaN layers yielding a significant reduction in tunnel junction-enabled light emitting diode (LED) forward voltage. This buried activation enabled the realization of cascaded blue LEDs with fully transparent GaN homojunction tunnel junctions. The initial optimization of buried p-GaN activation was performed on PN junctions grown by metal organic chemical vapor deposition (MOCVD) buried under hybrid tunnel junctions grown by MOCVD and molecular beam epitaxy. Next the activation process was implemented in cascaded blue LEDs emitting at 450 nm, which were enabled by fully transparent GaN homojunction tunnel junctions. The tunnel junction-enabled multi-active region blue LEDs were grown monolithically by MOCVD. This work demonstrates a state-of-the-art tunnel junction-enabled cascaded LED utilizing homojunction tunnel junctions which do not contain any heterojunction interface.

42 ENGINEERING↗
DOE OSTI2021

Neutron radiation hardness of aluminum gallium nitride UV LEDs at various wavelengths

Radiation hard diagnostics are critical to the success of nuclear fusion at National Ignition Facility, Z, ITER, and prolonged space explorations. We have first demonstrated the exceptional proton radiation hardness of initial GaN devices and qualified their space flight and deployment for missions such as the Laser Interferometer Space Antenna and International Space Station. We have further conducted neutron radiation hardness experiments at Los Alamos Neutron Science Center by opening a new high fluence beam station. During 2014–2016, we irradiated multiple Aluminum Gallium Nitride (AlGaN) LEDs with a maximum fluence of 2.4 × 1013 neutrons/cm2 in 3 years and generated 54 161 current–voltage (I–V) scan traces. Our data processing program analyzes each and all I–V traces. In addition, we retrieved local temperature records to analyze and remove temperature effects in the outdoor environment. The I–V curve families of AlGaN UV LEDs with emitting wavelengths of 265, 275, and 310 nm were compared. The I–V curves of 265 nm AlGaN UV LEDs have the smallest deviations from the average value, while the I–V curves for 310 nm AlGaN LEDs showed the largest deviations from the average value. We have reached another important recommendation for the optimal use of multiple AlGaN optoelectronic devices or imaging arrays for inertially confined fusion diagnostics: Shorter wavelength devices at 265 nm exhibit more consistent radiation hardness performance than the 310 nm devices. Higher aluminum content LEDs or AlxGa1–xN devices with higher mole fraction x for generating shorter wavelengths have better radiation hardness for fusion diagnostics.

Sun, K. -X. (ORCID:0000000224659235)↗
DOE OSTI2024

Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

The efficiency of high-power operation of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on the realization of uniform hole distribution between the QWs. In long wavelength InGaN/GaN QW LEDs, the thermionic interwell hole transport is hindered by high GaN barriers. However, in polar LED structures, these barriers may be circumvented by the lateral hole injection via semipolar {$10\bar{1}1$} QWs that form on the facets of V-defects. The efficiency of such carrier transfer depends on the transport time since transport in the semipolar QWs is competed by recombination. In this work, we study the carrier transfer from the semipolar to polar QWs by time-resolved photoluminescence in long wavelength (green to red) LEDs. We find that the carrier transfer through the semipolar QWs is fast, a few tens of picoseconds with the estimated room temperature ambipolar diffusion coefficient of ∼5.5 cm 2 /s. With diffusion much faster than recombination, the hole transport from the p-side of the structure to the polar QWs should proceed without a substantial loss, contributing to the high efficiency of long wavelength GaN LEDs.

Crystallographic defects↗
DOE OSTI2025

Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs

We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence technique. Multiple mechanisms related to efficiency loss are independently examined, including injection efficiency, carrier density vs current density relationship, phase space filling, quantum-confined Stark effect, and Coulomb enhancement. An optimal QW thickness of around 2.7 nm in these InGaN/GaN LEDs was determined for QWs having constant In composition. Despite improved control of deep-level defects and lower carrier density at a given current density, LEDs with thin QWs still suffer from an imbalance in enhancement effects on the radiative and intrinsic Auger–Meitner recombination coefficients. The imbalance in enhancement effects results in a decline in internal quantum efficiency and radiative efficiency with decreasing QW thickness at low current density in LEDs with QW thicknesses below 2.7 nm. Here, we also investigate how LED modulation bandwidth varies with QW thickness, identifying the key trends and their implications for device performance.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Origin of reduced efficiency in GaN-based micro-LEDs studied by scanning near-field optical microscopy

The quantum efficiency of micro-light emitting diodes (micro-LEDs) is lower than that of large area LEDs. This efficiency reduction is typically attributed to the nonradiative Shockley–Read–Hall recombination at the surface defects and current leakage through the sidewall region without a clear distinction between these effects. In this work, we attempt to find out which of these phenomena is most critical for the reduced efficiency of micro-LEDs. This has been done by mapping electroluminescence (EL) and photoluminescence (PL) and measuring PL dynamics in blue GaN micro-LEDs fabricated by dry etching. It has been found that in the as-etched device, the EL intensity is much lower than in devices with KOH etching and atomic layer deposition of SiO 2 . This effect is especially pronounced close to the sidewalls. On the other hand, PL decay times are similar in as-etched and passivated devices, both in their center and at the sidewalls. This allows concluding that the main mechanism of the reduced efficiency of micro-LEDs fabricated by dry etching is the current leakage in the sidewall region and not the nonradiative recombination. The KOH etching has been found to be the most efficient means to eliminate the current leakage.

36 MATERIALS SCIENCE↗