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At least 91 records · Page 5

Phase tuning of multiple Andreev reflections of Dirac fermions and the Josephson supercurrent in Al–MoTe 2 –Al junctions

When an electron is incident on a superconductor from a metal, it is reflected as a hole in a process called Andreev reflection. If the metal N is sandwiched between two superconductors S in an SNS junction, multiple Andreev reflections (MARs) occur. We have found that, in SNS junctions with high transparency (τ → 1) based on the Dirac semimetal MoTe 2 , the MAR features are observed with exceptional resolution. By tuning the phase difference φ between the bracketing Al superconductors, we establish that the MARs coexist with a Josephson supercurrent I s =I A sin φ. As we vary the junction voltage V, the supercurrent amplitude I A varies in step with the MAR order n, revealing a direct relation between them. Two successive Andreev reflections serve to shuttle a Cooper pair across the junction. If the pair is shuttled coherently, it contributes to I s . The experiment measures the fraction of pairs shuttled coherently vs. V. Surprisingly, superconductivity in MoTe 2 does not affect the MAR features.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Energy spectrum and current-phase relation of a nanowire Josephson junction close to the topological transition

A semiconducting nanowire proximitized by an $\textit{s}$-wave superconductor can be tuned into a topological state by an applied magnetic field. This quantum phase transition is marked by the emergence of Majorana zero modes at the ends of the wire. The fusion of Majorana modes at a junction between two nanowires results in a 4π-periodic Josephson effect. Here, we elucidate how the 4π periodicity arises across the topological phase transition in a highly-transparent short nanowire junction. Owing to a high transmission coefficient, Majorana zero modes coming from different wires are strongly coupled, with an energy scale set by the proximity-induced, field-independent pairing potential. At the same time, the topological spectral gap—defined by competition between superconducting correlations and Zeeman splitting—becomes narrow in the vicinity of the transition point. The resulting hybridization of the fused Majorana states with the spectral continuum strongly affects the electron density of states at the junction and its Josephson energy. We study the manifestations of this hybridization in the energy spectrum and phase dependence of the Josephson current. We pinpoint the experimentally observable signatures of the topological phase transition, focusing on junctions with weak backscattering.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Scattering of Magnons at Graphene Quantum-Hall-Magnet Junctions

Motivated by recent nonlocal transport studies of quantum-Hall-magnet (QHM) states formed in monolayer graphene’s N = 0 Landau level, here we study the scattering of QHM magnons by gate-controlled junctions between states with different integer filling factors ν . For the ν = 1 | – 1 | 1 geometry we find that magnons are weakly scattered by electric potential variation in the junction region, and that the scattering is chiral when the junction lacks a mirror symmetry. For the ν = 1 | 0 | 1 geometry, we find that kinematic constraints completely block magnon transmission if the incident angle exceeds a critical value. Our results explain the suppressed nonlocal–voltage signals observed in the ν = 1 | 0 | 1 case. We use our theory to propose that valley waves generated at ν = – 1 | 1 junctions and magnons can be used in combination to probe the spin or valley flavor structure of QHM states at integer and fractional filling factors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Mitigation of the internal p-n junction in CoS 2 -contacted FeS 2 single crystals: Accessing bulk semiconducting transport

Pyrite FeS 2 is an outstanding candidate for a low-cost, nontoxic, sustainable photovoltaic material, but efficient pyrite-based solar cells are yet to materialize. Recent studies of single crystals have shed much light on this by uncovering a p-type surface inversion layer on n-type (S-vacancy doped) crystals, and the resulting internal p-n junction. This leaky internal junction likely plays a key role in limiting efficiency in pyrite-based photovoltaic devices, also obscuring the true bulk semiconducting transport properties of pyrite crystals. Here, we demonstrate complete mitigation of the internal p-n junction in FeS 2 crystals by fabricating metallic CoS 2 contacts via a process that simultaneously diffuses Co (a shallow donor) into the crystal, the resulting heavy n doping yielding direct Ohmic contact to the interior. Low-temperature bulk transport studies of controllably Co- and S-vacancy doped semiconducting crystals then enable a host of previously inaccessible observations and measurements, including determination of donor activation energies (which are as low as 5 meV for Co), observation of an unexpected second activated transport regime, realization of electron mobility up to 2100 cm 2 V –1 s –1 , elucidation of very different mobilities in Co- and S-vacancy-doped cases, and observation of an abrupt temperaturedependent crossover to bulk Efros-Shklovskii variable-range hopping, accompanied by an unusual form of nonlinear Hall effect. Aspects of the results are interpreted with the aid of first-principles electronic structure calculations on both Co- and S-vacancy-doped FeS 2 . Furthermore, this work thus demonstrates unequivocal mitigation of the internal p-n junction in pyrite single crystals, with important implications for both future fundamental studies and photovoltaic devices

36 MATERIALS SCIENCE↗

Search for baryon junctions in photonuclear processes and isobar collisions at RHIC

During the early development of quantum chromodynamics, it was proposed that baryon number could be carried by a non-perturbative Y-shaped topology of gluon fields, called the gluon junction, rather than by the valence quarks as in the QCD standard model. A puzzling feature of ultra-relativistic nucleus-nucleus collisions is the apparent substantial baryon excess in the mid-rapidity region that could not be adequately accounted for in most conventional models of quark and diquark transport. The transport of baryonic gluon junctions is predicted to lead to a characteristic exponential distribution of net-baryon density with rapidity and could resolve the puzzle. In this context we point out that the rapidity density of net-baryons near mid-rapidity indeed follows an exponential distribution with a slope of –0.61 ± 0.03 as a function of beam rapidity in the existing global data from A+A collisions at AGS, SPS and RHIC energies. To further test if quarks or gluon junctions carry the baryon quantum number, we propose to study the absolute magnitude of the baryon vs. charge stopping in isobar collisions at RHIC. We also argue that semi-inclusive photon-induced processes (γ + p/A) at RHIC kinematics provide an opportunity to search for the signatures of the baryon junction and to shed light onto the mechanisms of observed baryon excess in the mid-rapidity region in ultra-relativistic nucleus-nucleus collisions. Such measurements can be further validated in A+A collisions at the LHC and e + p/A collisions at the EIC.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Electrically tunable nonlinear light generation in plasmonic tunnel junctions

Active and efficient control of nonlinear optical processes is essential for integrated photonics, with applications in signal processing, ultrafast switching, and quantum light manipulation. While nanophotonic structures are powerful for enhancing nonlinearities, achieving wide-range electrical tunability has remained a challenge. Plasmonic tunnel junctions offer a unique path to bridge this gap because they combine extreme optical field confinement with direct electrical control in a single nanoscale device. Here, we report the first, to our knowledge, demonstration of electrically tunable second-harmonic generation (SHG) in plasmonic tunnel junctions. Using ultra-stable epitaxial heterostructures, we achieve reproducible modulation of SHG with depths up to ∼500% and magnitudes above 1.3V −1 . We identify two mechanisms, electric-field-induced SHG (EFISH) and ion migration, that can either compete or cooperate depending on junction thickness and bias, enabling both broad tunability and ferroelectric-like hysteretic switching. These findings establish plasmonic tunnel junctions as a platform for electrically controlled nonlinear optics, with potential for nanoscale light sources, reconfigurable modulators, and neuromorphic photonic devices..

42 ENGINEERING↗

Highly efficient small molecule multi-junction organic photovoltaic cells

A highly efficient multi junction photovoltaic device, such as a two, three, or four junction device, is disclosed. The multi-junction device may include a first subcell comprising a first photoactive region and a second subcell comprising a second photoactive region. The first and second photoactive regions are designed to minimize spectral overlap and maximize photocurrent across a broad absorption spectra, such as wavelengths ranging from 400 nm to 900 nm. The device may further include an inter-connecting layer, disposed between the first subcell and the second subcell, that is at least substantially transparent. By introducing a transparent interconnecting layer, a dual element (tandem) cell achieves a power conversion efficiency of 10.0±0.5%. By adding an additional (3rd) sub-cell that absorbs at the second order optical interference maximum within the stack. The triple junction cell significantly improves the quantum efficiency at shorter wavelengths, achieving a power conversion efficiency of 11.1±0.5%. Adding additional sub-cells has been shown to increase power conversion efficiency above 12%.

Che, Xiaozhou↗

Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn 3 , sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

36 MATERIALS SCIENCE↗

Gate-tunable enhancement of supercurrent in hybrid planar Josephson junctions

Planar Josephson junctions (JJs) have emerged as a promising platform for the realization of topological superconductivity and Majorana zero modes. To obtain robust quasi one-dimensional (1D) topological superconducting states using planar JJs, limiting the number of 1D Andreev bound states’ subbands that can be present, and increasing the size of the topological superconducting gap are two fundamental challenges. It has been suggested that both problems can be addressed by properly designing the interfaces between the JJ’s normal region and the superconducting leads. We fabricated Josephson junctions with periodic hole structures on the superconducting contact leads on InAs heterostructures with epitaxial superconducting Al. By depleting the chemical potential inside the holes region with a top gate, we observed an enhancement of the supercurrent across the junction. The theoretical analysis shows that the enhancement of the JJ’s critical current is achieved when the depletion of the holes is such to optimize the matching of quasiparticles’ wave function at the normal/superconductor interface. Furthermore, these results show how the combination of carefully designed patterns for the Al coverage, and external gates, can be successfully used to tune the density and wave functions’ profiles in the normal region of the JJ, and therefore open an avenue to tune some of the critical properties, such as number of subbands and size of the topological gap, that must be optimized to obtain robust quasi-1D superconducting states supporting Majorana bound states.

Bogoliubov-de Gennes equations↗

Transport studies in a gate-tunable three-terminal Josephson junction

Josephson junctions with three or more superconducting leads have been predicted to exhibit topological effects in the presence of few conducting modes within the interstitial normal material. Such behavior, of relevance for topologically protected quantum bits, would lead to specific transport features measured between terminals, with topological phase transitions occurring as a function of phase and voltage bias. Although conventional, two-terminal Josephson junctions have been studied extensively, multiterminal devices have received relatively little attention to date. Motivated in part by the possibility to ultimately observe topological phenomena in multiterminal Josephson devices, as well as their potential for coupling gatemon qubits, here we describe the superconducting features of a top-gated mesoscopic three-terminal Josephson device. The device is based on an InAs two-dimensional electron gas proximitized by epitaxial aluminum. We map out the transport properties of the device as a function of bias currents, top gate voltage, and magnetic field. Finally, we find a very good agreement between the zero-field experimental phase diagram and a resistively and capacitively shunted junction computational model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Atomistic modeling of a superconductor–transition metal dichalcogenide–superconductor Josephson junction

Using an atomistic tight-binding model, we investigate the characteristics of a Josephson junction formed by monolayers of MoS 2 sandwiched between Pb superconducting electrodes. We derive and apply Green's function–based formulation to compute the Josephson current as well as the local density of states in the junction. Our analysis of diagonal and off-diagonal components of the local density of states reveals the presence of triplet superconducting correlations in the MoS 2 monolayers and spin-polarized subgap (Andreev bound) states. Our formulation can be extended to other systems where atomistic details and large scales are needed to obtain accurate modeling of Josephson junction physics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Giant nonreciprocity of current-voltage characteristics of noncentrosymmetric superconductor–normal metal–superconductor junctions

Here we develop a theory of nonreciprocal current-voltage (I-U) characteristics in noncentrosymmetric superconductor-normal metal-superconductor junctions. We show that at small voltages the nonreciprocal features of the I-U characteristics can be expressed entirely in terms of the dependence of the nonreciprocal part of the quasiparticle density of states in the normal metal part of the junction on the order parameter phase difference chi across the junction. The amplitude of the nonreciprocity in this regime is proportional to the inelastic quasiparticle relaxation time $\tau_{in}$, and can be much larger than that in normal materials, where it is proportional to the elastic relaxation time $\tau_{el}$. At low bias the I-U characteristics possess additional symmetry not present in normal conductors; they remain invariant under simultaneous reversal of current, voltage, and the magnetic field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Tunneling magnetoresistance in MgO tunnel junctions with Fe-based leads in empirically corrected density functional theory

The minority-spin Fe/MgO interface states are at the Fermi level in density functional theory (DFT), but experimental evidence and GW calculations place them slightly higher in energy. This small shift can strongly influence tunneling magnetoresistance (TMR) in junctions with a thin MgO barrier and its dependence on the concentration of Co in the electrodes. Here, in this study, an empirical potential correction to DFT is introduced to shift the interface states up to match the tunnel spectroscopy data. With this shift, TMR in Fe/MgO/Fe junctions exceeds 800% and 3000% at 3 and 4 monolayers (ML) of MgO, respectively. We further consider the effect of alloying of the Fe electrodes with up to 30% Co or 10% V, treating them in the coherent potential approximation (CPA). Alloying with Co broadens the interface states and brings a large incoherent minority-spin spectral weight to the Fermi level. Alloying with V brings the minority-spin resonant states close to the Fermi level. However, in both cases the minority-spin spectral weight at the Fermi level resides primarily at the periphery of the Brillouin zone, which is favorable for spin filtering. Using convolutions of k II -resolved barrier densities of states calculated in CPA, it is found that TMR is strongly reduced by alloying with Co or V but still remains above 500% at 4 ML of MgO up to 30% of Co or 5% V. At 5 ML, the TMR increases above 1000% in all systems considered. However, while TMR declines sharply with increasing bias up to 0.2 eV in the tunnel junctions with pure Fe leads, it remains almost constant up to 0.5 eV if leads are alloyed with Co.

74 ATOMIC AND MOLECULAR PHYSICS↗

Surface stress tensor and junction conditions on a rotating null horizon

The general form of the surface stress tensor of an infinitesimally thin shell located on a rotating null horizon is derived, when different interior and exterior geometries are joined there. Even though the induced metric on the surface must be the same approached from either side, the first derivatives of the metric need not be. Such discontinuities lead to a Dirac δ-distribution in the Einstein tensor localized on the horizon. For a general stationary axisymmetric geometry the surface stress tensor can be expressed in terms of two geometric invariants that characterize the surface, namely the discontinuities [κ] and [J] of the surface gravity κ and angular momentum density J. The Komar energy and angular momentum are given in coordinates adapted to the Killing symmetries, and the surface contributions to each determined in terms of [κ] and [J] . Guided by these, a simple modification of the original Israel junction conditions is verified directly from the Einstein tensor density to give the correct finite result for the surface stress, when the normal n to the surface is allowed to tend continuously to a null vector. The relation to Israel’s original junction conditions, which fail on null surfaces, is given. The modified junction conditions are suitable to the matching of a rotating “black hole” exterior to any interior geometry joined at the Kerr null horizon surface, even when the surface normal is itself discontinuous and the Barrabès-Israel formalism is also inapplicable. This joining on a rotating null horizon is purely of the matter shell type and does not contain a propagating gravitational shock wave.

79 ASTRONOMY AND ASTROPHYSICS↗

Triple junction solute segregation in Al-based polycrystals

Solute segregation is a crucial means of stabilizing nanostructured alloys, and at very small grain sizes, this requires consideration of triple junctions (TJs), which attain a meaningful volume fraction and thus become relevant for bulk material behavior. Here, in this study, the solute segregation spectra for grain boundary (GB) and TJ sites are calculated for a large number of dilute Al-based binary systems with available interatomic potentials. A defect-identifying algorithm is applied to quantify the average GB thickness and classify the intergranular site spectra into GB and junction subspectra. The algorithm is also applied to a hybrid electronic-level database for GB segregation of various solutes in Al, yielding polycrystalline TJ solute segregation spectra from first principles. The results suggest that TJ segregation is alloy or interatomic potential dependent and can exhibit either boundary or junction preference. With these spectra as inputs, the spectral GB segregation model gives quantitative predictions of segregation as a function of grain size, temperature, and total solute concentration, suitable for alloy screening and design.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Simulating the Effect of p-n Junction Fields on TRPL Transients of Thin-Film CdTe Solar Cells

Bias-dependent time-resolved photoluminescence (TRPL) transients of thin CdTe solar cells were simulated with the goal of characterizing the effect of p-n junction fields on photoluminescence decays. It was found that, although bulk lifetime could be accurately determined in field-free samples, electric field effects in solar cells lead to systematic underestimation of bulk lifetime. Modulating field strength with the application of external bias was found to have a major impact, a result corroborated by experimental data. In particular, p-n junction fields effects were found to be effectively suppressed when a cell is put far into forward bias, enabling accurate measurement of bulk lifetime in p-n junction structures.

CdTe↗

Method to create cuprate tunnel junctions with atomically sharp interfaces

In this work, we present a method for producing tunnel junctions from cuprate thin films grown by atomic layer-by-layer molecular beam epitaxy (ALL-MBE). Our approach utilizes microfabrication processing and relies on the atomically precise interfaces provided by the ALL-MBE synthesis technique. The method is suitable for a wide range of junction dimensions and materials and allows for more complex designs such as superconducting quantum interference devices and junction arrays. Fully superconducting electrodes ensure that the contact resistances in the devices created by this method remain very low.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Advances in Mixed Tin‐Lead Narrow‐Bandgap Perovskites for Single‐Junction and All‐Perovskite Tandem Solar Cells

Abstract Organic–inorganic metal‐halide perovskites have received great attention for photovoltaic (PV) applications owing to their superior optoelectronic properties and the unprecedented performance development. For single‐junction PV devices, although lead (Pb)‐based perovskite solar cells have achieved 26.1% efficiency, the mixed tin‐lead (Sn‐Pb) perovskites offer more ideal bandgap tuning capability to enable an even higher performance. The Sn‐Pb perovskite (with a bandgap tuned to ≈1.2 eV) is also attractive as the bottom subcell for a tandem configuration to further surpass the Shockley–Queisser radiative limit for the single‐junction devices. The performance of the all‐perovskite tandem solar cells has gained rapid development and achieved a certified efficiency up to 29.1%. In this article, the properties and recent development of state‐of‐the‐art mixed Sn‐Pb perovskites and their application in single‐junction and all‐perovskite tandem solar cells are reviewed. Recent advances in various approaches covering additives, solvents, interfaces, and perovskite growth are highlighted. The authors also provide the perspective and outlook on the challenges and strategies for further development of mixed Sn‐Pb perovskites in both efficiency and stability for PV applications.

14 SOLAR ENERGY↗