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NASA NTRS2013

Helicopter Flight Test of 3-D Imaging Flash LIDAR Technology for Safe, Autonomous, and Precise Planetary Landing

Two flash lidars, integrated from a number of cutting-edge components from industry and NASA, are lab characterized and flight tested for determination of maximum operational range under the Autonomous Landing and Hazard Avoidance Technology (ALHAT) project (in its fourth development and field test cycle) which is seeking to develop a guidance, navigation, and control (GN&C) and sensing system based on lidar technology capable of enabling safe, precise crewed or robotic landings in challenging terrain on planetary bodies under any ambient lighting conditions. The flash lidars incorporate pioneering 3-D imaging cameras based on Indium-Gallium-Arsenide Avalanche Photo Diode (InGaAs APD) and novel micro-electronic technology for a 128 x 128 pixel array operating at 30 Hz, high pulse-energy 1.06 micrometer Nd:YAG lasers, and high performance transmitter and receiver fixed and zoom optics. The two flash lidars are characterized on the NASA-Langley Research Center (LaRC) Sensor Test Range, integrated with other portions of the ALHAT GN&C system from partner organizations into an instrument pod at NASA-JPL, integrated onto an Erickson Aircrane Helicopter at NASA-Dryden, and flight tested at the Edwards AFB Rogers dry lakebed over a field of human-made geometric hazards during the summer of 2010. Results show that the maximum operational range goal of 1 km is met and exceeded up to a value of 1.2 km. In addition, calibrated 3-D images of several hazards are acquired in real-time for later reconstruction into Digital Elevation Maps (DEM's).

Roback, Vincent↗

NASA NTRS2013

Fast, High-Precision Readout Circuit for Detector Arrays

The GEO-CAPE mission described in NASA's Earth Science and Applications Decadal Survey requires high spatial, temporal, and spectral resolution measurements to monitor and characterize the rapidly changing chemistry of the troposphere over North and South Americas. High-frame-rate focal plane arrays (FPAs) with many pixels are needed to enable such measurements. A high-throughput digital detector readout integrated circuit (ROIC) that meets the GEO-CAPE FPA needs has been developed, fabricated, and tested. The ROIC is based on an innovative charge integrating, fast, high-precision analog-to-digital circuit that is built into each pixel. The 128×128-pixel ROIC digitizes all 16,384 pixels simultaneously at frame rates up to 16 kHz to provide a completely digital output on a single integrated circuit at an unprecedented rate of 262 million pixels per second. The approach eliminates the need for off focal plane electronics, greatly reducing volume, mass, and power compared to conventional FPA implementations. A focal plane based on this ROIC will require less than 2 W of power on a 1×1-cm integrated circuit. The ROIC is fabricated of silicon using CMOS technology. It is designed to be indium bump bonded to a variety of detector materials including silicon PIN diodes, indium antimonide (InSb), indium gallium arsenide (In- GaAs), and mercury cadmium telluride (HgCdTe) detector arrays to provide coverage over a broad spectral range in the infrared, visible, and ultraviolet spectral ranges.

Rider, David M.↗

NASA NTRS2013

Helicopter Flight Test of a Compact, Real-Time 3-D Flash Lidar for Imaging Hazardous Terrain During Planetary Landing

A second generation, compact, real-time, air-cooled 3-D imaging Flash Lidar sensor system, developed from a number of cutting-edge components from industry and NASA, is lab characterized and helicopter flight tested under the Autonomous Precision Landing and Hazard Detection and Avoidance Technology (ALHAT) project. The ALHAT project is seeking to develop a guidance, navigation, and control (GN&C) and sensing system based on lidar technology capable of enabling safe, precise crewed or robotic landings in challenging terrain on planetary bodies under any ambient lighting conditions. The Flash Lidar incorporates a 3-D imaging video camera based on Indium-Gallium-Arsenide Avalanche Photo Diode and novel micro-electronic technology for a 128 x 128 pixel array operating at a video rate of 20 Hz, a high pulse-energy 1.06 μm Neodymium-doped: Yttrium Aluminum Garnet (Nd:YAG) laser, a remote laser safety termination system, high performance transmitter and receiver optics with one and five degrees field-of-view (FOV), enhanced onboard thermal control, as well as a compact and self-contained suite of support electronics housed in a single box and built around a PC-104 architecture to enable autonomous operations. The Flash Lidar was developed and then characterized at two NASA-Langley Research Center (LaRC) outdoor laser test range facilities both statically and dynamically, integrated with other ALHAT GN&C subsystems from partner organizations, and installed onto a Bell UH-1H Iroquois "Huey" helicopter at LaRC. The integrated system was flight tested at the NASA-Kennedy Space Center (KSC) on simulated lunar approach to a custom hazard field consisting of rocks, craters, hazardous slopes, and safe-sites near the Shuttle Landing Facility runway starting at slant ranges of 750 m. In order to evaluate different methods of achieving hazard detection, the lidar, in conjunction with the ALHAT hazard detection and GN&C system, operates in both a narrow 1deg FOV raster-scanning mode in which successive, gimbaled images of the hazard field are mosaicked together as well as in a wider, 4.85deg FOV staring mode in which digital magnification, via a novel 3-D superresolution technique, is used to effectively achieve the same spatial precision attained with the more narrow FOV optics. The lidar generates calibrated and corrected 3-D range images of the hazard field in real-time and passes them to the ALHAT Hazard Detection System (HDS) which stitches the images together to generate on-the-fly Digital Elevation Maps (DEM's) and identifies hazards and safe-landing sites which the ALHAT GN&C system can then use to guide the host vehicle to a safe landing on the selected site. Results indicate that, for the KSC hazard field, the lidar operational range extends from 100m to 1.35 km for a 30 degree line-of-sight angle and a range precision as low as 8 cm which permits hazards as small as 25 cm to be identified. Based on the Flash Lidar images, the HDS correctly found and reported safe sites in near-real-time during several of the flights. A follow-on field test, planned for 2013, seeks to complete the closing of the GN&C loop for fully-autonomous operations on-board the Morpheus robotic, rocket-powered, free-flyer test bed in which the ALHAT system would scan the KSC hazard field (which was vetted during the present testing) and command the vehicle to landing on one of the selected safe sites.

Roback, VIncent E.↗

NASA NTRS2016

Spectralon BRDF and DHR Measurements in Support of Satellite Instruments Operating Through Shortwave Infrared

Satellite instruments operating in the reflective solar wavelength region require accurate and precise determination of the Bidirectional Reflectance Distribution Functions (BRDFs) of the laboratory and flight diffusers used in their pre-flight and on-orbit calibrations. This paper advances that initial work and presents a comparison of spectral Bidirectional Reflectance Distribution Function (BRDF) and Directional Hemispherical Reflectance (DHR) of Spectralon*, a common material for laboratory and onorbit flight diffusers. A new measurement setup for BRDF measurements from 900 nm to 2500 nm located at NASA Goddard Space Flight Center (GSFC) is described. The GSFC setup employs an extended indium gallium arsenide detector, bandpass filters, and a supercontinuum light source. Comparisons of the GSFC BRDF measurements in the ShortWave InfraRed (SWIR) with those made by the NIST Spectral Trifunction Automated Reference Reflectometer (STARR) are presented. The Spectralon sample used in this study was 2 inch diameter, 99% white pressed and sintered Polytetrafluoroethylene (PTFE) target. The NASA/NIST BRDF comparison measurements were made at an incident angle of 0 deg and viewing angle of 45 deg. Additional BRDF data not compared to NIST were measured at additional incident and viewing angle geometries and are not presented here The total combined uncertainty for the measurement of BRDF in the SWIR range made by the GSFC scatterometer is less than 1% (k=1). This study is in support of the calibration of the Joint Polar Satellite System (JPSS) Radiation Budget Instrument (RBI) and Visible Infrared Imaging Radiometer Suite (VIIRS) of and other current and future NASA remote sensing missions operating across the reflected solar wavelength region.

Georgiev, Georgi T.↗

NASA NTRS1987

Mechanical strength and tribological behavior of ion-beam deposited boron nitride films on non-metallic substrates

An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2.

Miyoshi, Kazuhisa↗

NASA NTRS1987

Mechanical strength and tribological behavior of ion-beam-deposited boron nitride films on non-metallic substrates

Miyoshi, Kazuhisa↗

NASA NTRS1993

Micro-opto-mechanical devices and systems using epitaxial lift off

The integration of high quality, single crystal thin film gallium arsenide (GaAs) and indium phosphide (InP) based photonic and electronic materials and devices with host microstructures fabricated from materials such as silicon (Si), glass, and polymers will enable the fabrication of the next generation of micro-opto-mechanical systems (MOMS) and optoelectronic integrated circuits. Thin film semiconductor devices deposited onto arbitrary host substrates and structures create hybrid (more than one material) near-monolithic integrated systems which can be interconnected electrically using standard inexpensive microfabrication techniques such as vacuum metallization and photolithography. These integrated systems take advantage of the optical and electronic properties of compound semiconductor devices while still using host substrate materials such as silicon, polysilicon, glass and polymers in the microstructures. This type of materials optimization for specific tasks creates higher performance systems than those systems which must use trade-offs in device performance to integrate all of the function in a single material system. The low weight of these thin film devices also makes them attractive for integration with micromechanical devices which may have difficulty supporting and translating the full weight of a standard device. These thin film devices and integrated systems will be attractive for applications, however, only when the development of low cost, high yield fabrication and integration techniques makes their use economically feasible. In this paper, we discuss methods for alignment, selective deposition, and interconnection of thin film epitaxial GaAs and InP based devices onto host substrates and host microstructures.

Camperi-Ginestet, C.↗

NASA NTRS1994

Modeling of high efficiency solar cells under laser pulse for power beaming applications

Solar cells have been used to convert sunlight to electrical energy for many years and also offer great potential for non-solar energy conversion applications. Their greatly improved performance under monochromatic light compared to sunlight, makes them suitable as photovoltaic (PV) receivers in laser power beaming applications. Laser beamed power to a PV array receiver could provide power to satellites, an orbital transfer vehicle, or a lunar base. Gallium arsenide (GaAs) and indium phosphide (InP) solar cells have calculated efficiencies of more than 50 percent under continuous illumination at the optimum wavelength. Currently high power free-electron lasers are being developed which operate in pulsed conditions. Understanding cell behavior under a laser pulse is important in the selection of the solar cell material and the laser. An experiment by NAsA lewis and JPL at the AVLIS laser facility in Livermore, CA presented experimental data on cell performance under pulsed laser illumination. Reference 5 contains an overview of technical issues concerning the use of solar cells for laser power conversion, written before the experiments were performed. As the experimental results showed, the actual effects of pulsed operation are more complicated. Reference 6 discusses simulations of the output of GaAs concentrator solar cells under pulsed laser illumination. The present paper continues this work, and compares the output of Si and GaAs solar cells.

Jain, Raj K.↗

NASA NTRS2010

InGaP Heterojunction Barrier Solar Cells

A new solar-cell structure utilizes a single, ultra-wide well of either gallium arsenide (GaAs) or indium-gallium-phosphide (InGaP) in the depletion region of a wide bandgap matrix, instead of the usual multiple quantum well layers. These InGaP barrier layers are effective at reducing diode dark current, and photogenerated carrier escape is maximized by the proper design of the electric field and barrier profile. With the new material, open-circuit voltage enhancements of 40 and 100 mV (versus PIN control systems) are possible without any degradation in short-circuit current. Basic tenets of quantum-well and quantum- dot solar cells are utilized, but instead of using multiple thin layers, a single wide well works better. InGaP is used as a barrier material, which increases open current, while simultaneously lowering dark current, reducing both hole diffusion from the base, and space charge recombination within the depletion region. Both the built-in field and the barrier profile are tailored to enhance thermionic emissions, which maximizes the photocurrent at forward bias, with a demonstrated voltage increase. An InGaP heterojunction barrier solar cell consists of a single, ultra-wide GaAs, aluminum-gallium-arsenide (AlGaAs), or lower-energy-gap InGaP absorber well placed within the depletion region of an otherwise wide bandgap PIN diode. Photogenerated electron collection is unencumbered in this structure. InGaAs wells can be added to the thick GaAs absorber layer to capture lower-energy photons.

Welser, Roger E.↗

NASA NTRS1984

Optical and interfacial electronic properties of diamond-like carbon films

Hard, semitransparent carbon films were prepared on oriented polished crystal wafers of silicon, indium phosphide and gallium arsenide, as well as on KBr and quartz. Properties of the films were determined using IR and visible absorption spectrocopy, ellipsometry, conductance-capacitance spectroscopy and alpha particle-proton recoil spectroscopy. Preparation techniques include RF plasma decomposition of methane (and other hydrocarbons), ion beam sputtering, and dual-ion-beam sputter deposition. Optical energy band gaps as large as 2.7 eV and extinction coefficients lower than 0.1 at long wavelengths are found. Electronic state densities at the interface with silicon as low as 10 to the 10th states/eV sq cm per were found.

Woollam, J. A.↗

NASA NTRS1990

Photovoltaic options for solar electric propulsion

During the past decade, a number of advances have occurred in solar cell and array technology. These advances have lead to performance improvement for both conventional space arrays and for advanced technology arrays. Performance enhancements have occurred in power density, specific power, and environmental capability. Both state-of-the-art and advanced development cells and array technology are discussed. Present technology will include rigid, rollout, and foldout flexible substrate designs, with silicon and GaAs solar cells. The use of concentrator array systems is also discussed based on both DOD and NASA efforts. The benefits of advanced lightweight array technology, for both near term and far term utilization, and of advanced high efficiency, thin, radiation resistant cells is examined. This includes gallium arsenide on germaniun substrates, indium phosphide, and thin film devices such as copper indium diselenide.

Stella, Paul M.↗

NASA NTRS1994

Electrochemical Characterization of InP and GaAs Based Structures for Space Solar Cell Applications.

In this paper the emphasis is on accurate majority carrier concentration EC-V profiling of structures based on Indium Phosphide and Gallium Arsenide, using a newly developed electrolyte based on Hydrogen Flouride, Acetic Acid, Phosphoric Acid, 1-phenyl-2-propanamine and Ammonia Diflouride. Some preliminary data on the use of this electrolyte for determining the energy distribution of surface and deep states of these structures, applicable to fabrication process optimization and radiation induced defects studies of solar cells, are also provided.

Faur, Maria↗

NASA NTRS1978

Vapor phase growth technique of III-V compounds utilizing a preheating step

In the vapor phase epitaxy fabrication of semiconductor devices and in particular semiconductor lasers, the deposition body on which a particular layer of the laser is to be grown is preheated to a temperature about 40.degree. to 60.degree. C. lower than the temperature at which deposition occurs. It has been discovered that by preheating at this lower temperature there is reduced thermal decomposition at the deposition surface, especially for semiconductor materials such as indium gallium phosphide and gallium arsenide phosphide. A reduction in thermal decomposition reduces imperfections in the deposition body in the vicinity of the deposition surface, thereby providing a device with higher efficiency and longer lifetime.

Olsen, Gregory Hammond↗

NASA NTRS1984

Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.

Mishina, H.↗

NASA NTRS1991

Gallium arsenide quantum well-based far infrared array radiometric imager

We have built an array-based camera (FIRARI) for thermal imaging (lambda = 8 to 12 microns). FIRARI uses a square format 128 by 128 element array of aluminum gallium arsenide quantum well detectors that are indium bump bonded to a high capacity silicon multiplexer. The quantum well detectors offer good responsivity along with high response and noise uniformity, resulting in excellent thermal images without compensation for variation in pixel response. A noise equivalent temperature difference of 0.02 K at a scene temperature of 290 K was achieved with the array operating at 60 K. FIRARI demonstrated that AlGaAS quantum well detector technology can provide large format arrays with performance superior to mercury cadmium telluride at far less cost.

Forrest, Kathrine A.↗

NASA NTRS1991

Key factors limiting the open circuit voltage of n(+)pp(+) indium phosphide solar cells

Solar cells made from gallium arsenide (GaAs), with a room temperature bandgap of E(sub g) = 1.43 eV have exhibited the best measured open circuit voltage (V sub OC) of 1.05 V at 1 AMO, 25 C. The material InP is in many ways similar to GaAs. A simple calculation comparing InP to GaAs then shows that solar cells made from InP, with E(sub g) = 1.35 at 300 K, should exhibit the best measured (V sub OC) of approximately 950 mV at 1 AMO, 300 K. However, to date, the best measured V(sub OC) for InP solar cells made by any fabrication method is 899 mV at AM1.5, 25 C which would translate to 912 mV at 1 AMO, 25 C. The V(sub OC) of an n(+)pp(+) InP solar cell is governed by several factors. Of these, some factors, such as the thickness and doping of the emitter and base regions, are easily controlled and can be adjusted to desired values dictated by a good performance optimizing model. Such factors were not considered. There are other factors which also govern V(sub OC), and their values are not so easily controlled. The primary ones among these are (1) the indirect or Hall-Shockley-Read lifetimes in the various regions of the cell, (2) the low-doping intrinsic carrier concentration n(sub i) of the InP material, (3) the heavy doping factors in the emitter and BSF regions, and (4) the front surface recombination velocity S(sub F). The influence of these latter factors on the V(sub OC) of the n(+)pp(+) InP solar cell and the results were used to produce a near-optimum design of the n(+)pp(+) InP solar cell.

Goradia, Chandra↗

NASA NTRS1990

Key factors limiting the open circuit voltage of n(+)pp(+) indium phosphide solar cells

Solar cells made from gallium arsenide (Gaas), with a room temperature bandgap of E(sub g) = 1.43 eV have exhibited the best measured open circuit voltage (V sub oc) of 1.05 V at 1 AM0, 25 C. The material InP is in many ways similar to GaAs. A simple calculation comparing InP to GaAs then shows that solar cells made from InP, with E(sub g) = 1.35 at 300 K, should exhibit the best measured V sub oc of approximately 950 mV at 1 AM0, 300 K. However, to date, the best measured V sub oc for InP solar cells made by any fabrication method is 899 mV at AM1.5, 25 C which would translate to 912 mV at 1 AM0, 25 C. The V sub oc of an n(+)pp(+) InP solar cell is governed by several factors. Of these, some factors, such as the thickness and doping of the emitter and base regions, are easily controlled and can be adjusted to desired values dictated by a good performance optimizing model. Such factors were not considered. There are other factors which also govern V sub oc, and their values are not so easily controlled. The primary ones among these are (1) the indirect or Hall-Shockley-Read lifetimes in the various regions of the cell, (2) the low-doping intrinsic carrier concentration n(sub i) of the InP material, (3) the heavy doping factors in the emitter and BSF regions, and (4) the front surface recombination velocity S(sub F). The influence of these latter factors on the V sub oc of the n(+)pp(+) InP solar cell and the results were used to produce a near-optimum design of the n(+)pp(+) InP solar cell.

Goradia, Chandra↗

NASA NTRS1972

Investigation of crystal growth in zero gravity environment and investigation of metallic whiskers

Theoretical and experimental work reported relates to the effects of near-zero gravity on growths of crystals and metallic whiskers during Skylab and Apollo flight experiments. Studies on growth and characterization of candidate materials for flight experiments cover indium-bismuth compounds, bismuth single crystals, gallium arsenide films and single crystals, and cadmium whiskers.

Davis, J. H.↗