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At least 91 records · Page 5

High operating temperature T2SL digital focal plane arrays for earth remote sensing instruments

In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The high operating temperature (HOT) BIRD focal plane arrays (FPAs) offer the same high performance, uniformity, operability, manufacturability, and affordability advantages as InSb. However, mid-wavelength infrared (MWIR) HOT-BIRD FPAs can operate at significantly higher temperatures (>150K) than InSb FPAs (typically 80K). Moreover, while InSb has a fixed cutoff wavelength (~5.4 µm), the HOT-BIRD offers a continuous adjustable cutoff wavelength, ranging from ~4 µm to >15 µm, and is therefore also suitable for long wavelength infrared (LWIR) as well. The LWIR detectors based on the BIRD architecture has also demonstrated significant operating temperature advantages over those based on traditional p-n junction designs. Two 6U SmalSat missions CIRAS (Cubesat Infrared Atmospheric Sounder) and HyTI (Hyperspectral Thermal Imager) are based on JPL’s T2SL BIRD focal plane arrays (FPAs). Based on III-V compound semiconductors, the BIRD FPAs offer a breakthrough solution for the realization of low cost (high yield), high-performance FPAs with excellent uniformity and pixel-to-pixel operability. We have also exploring the possibilities of integrating either metasurface resonator cavity or metasurface based flatlens with individual pixels to improve the signal-to-noise ratio of the detectors. Furthermore, we will discuss the advantages of the utilization of all digital read out integrated circuits with HOT-BIRDs.

Ghuman, and Parminder↗

Digital Mid-Wavelength and Long-Wavelength Infrared Focal Planes for SmallSat Applications

In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The high operating temperature (HOT) BIRD focal plane arrays (FPAs) offer the same high performance, uniformity, operability, manufacturability, and affordability advantages as InSb. However, mid-wavelength infrared (MWIR) HOT-BIRD FPAs can operate at significantly higher temperatures (>150K) than InSb FPAs (typically 80K). Moreover, while InSb has a fixed cutoff wavelength (~5.4 µm), the HOT-BIRD offers a continuous adjustable cutoff wavelength, ranging from ~4 µm to >15 µm, and is therefore also suitable for long wavelength infrared (LWIR) as well. The LWIR detectors based on the BIRD architecture has also demonstrated significant operating temperature advantages over those based on traditional p-n junction designs. Two 6U SmalSat missions CIRAS (Cubesat Infrared Atmospheric Sounder) and HyTI (Hyperspectral Thermal Imager) are based on JPL’s T2SL BIRD focal plane arrays (FPAs). Based on III-V compound semiconductors, the BIRD FPAs offer a breakthrough solution for the realization of low cost (high yield), high-performance FPAs with excellent uniformity and pixel-to-pixel operability. Furthermore, we will discuss the advantages of the utilization of all digital read out integrated circuits with HOT-BIRDs.

Pagano, Thomas↗

Mid-Wavelength and Long-Wavelength Infrared Focal Planes for SmallSat Applications

In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The high operating temperature (HOT) BIRD focal plane arrays (FPAs) offer the same high performance, uniformity, operability, manufacturability, and affordability advantages as InSb. However, mid-wavelength infrared (MWIR) HOT-BIRD FPAs can operate at significantly higher temperatures (>150K) than InSb FPAs (typically 80K). Moreover, while InSb has a fixed cutoff wavelength (~5.4 µm), the HOT-BIRD offers a continuous adjustable cutoff wavelength, ranging from ~4 µm to >15 µm, and is therefore also suitable for long wavelength infrared (LWIR) as well. The LWIR detectors based on the BIRD architecture has also demonstrated significant operating temperature advantages over those based on traditional p-n junction designs. Two 6U SmalSat missions CIRAS (Cubesat Infrared Atmospheric Sounder) and HyTI (Hyperspectral Thermal Imager) are based on JPL’s T2SL BIRD focal plane arrays (FPAs). Based on III-V compound semiconductors, the BIRD FPAs offer a breakthrough solution for the realization of low cost (high yield), high-performance FPAs with excellent uniformity and pixel-to-pixel operability. We have also exploring the possibilities of integrating either metasurface resonator cavity or metasurface based flatlens with individual pixels to improve the signal-to-noise ratio of the detectors. Furthermore, we will discuss the advantages of the utilization of all digital read out integrated circuits with HOT-BIRDs.

Ghuman, Parminder↗

Phase transitions in Group III-V and II-VI semiconductors at high pressure

The structures and transition pressures of Group III-V and II-VI semiconductors and of a pseudobinary system (Ga/x/In/1-x/Sb) have been investigated. Results indicate that GaP, InSb, GaSb, GaAs and possible AlP assume Metallic structures at high pressures; a tetragonal, beta-Sn-like structure is adopted by only InSb and GaSb. The rocksalt phase is preferred in InP, InAs, AlSb, ZnO and ZnS. The model of Van Vechten (1973) gives transition pressures which are in good agreement with measured values, but must be refined to account for the occurrence of the ionic rocksalt structure in some compounds. In addition, discrepancies between the theoretical scaling values for volume changes at the semiconductor-to-metal transitions are observed.

Yu, S. C.↗

Chemical composition of the SiO2/InSb interface as determined by X-ray photoelectron spectroscopy

In connection with the relatively poor insulating characteristics of the native oxides of most III-V compound semiconductors, there has been interest in the development of deposited dielectric layers for surface passivation and MOS device fabrication on III-V compound semiconductor substrates. The chemical system of SiO2 deposited on single-crystal InSb substrates has been proposed for the fabrication of IR CCD. The considered investigation is concerned with a detailed examination of the chemical nature of the interactions between deposited and native oxides using X-ray photoelectron spectroscopy (XPS) in conjunction with a chemical-etching technique for depth profiling. The compositional structure of the interfaces obtained in the SiO2/native oxide/InSb system is derived on the basis of an intensity analysis of XPS spectra. Thermal oxidation of the InSb substrate is found to result in an In-rich native oxide and excess elemental Sb at the native oxide/substrate interface.

Vasquez, R. P.↗

Advanced indium antimonide monolithic charge coupled infrared imaging arrays

The continued process development of SiO2 insulators for use in advanced InSb monolithic charge coupled infrared imaging arrays is described. Specific investigations into the use of plasma enhanced chemical vapor deposited (PECVD) SiO2 as a gate insulator for InSb charge coupled devices is discussed, as are investigations of other chemical vapor deposited SiO2 materials.

Koch, T. L.↗

The new near-infrared array camera at the University of Rochester

A near-infrared array camera system has been constructed for use in the 1-5 micron region. The camera is based on a 32 x 32 element InSb focal plane array. The performance of most of the individual detectors in the system is found to be comparable to or better than the performance of any single-element InSb detector system currently in use. A thorough description of the camera system and its image processing subsystems is given, and some sample images are provided.

Forrest, W. J.↗

Modelling directional solidification

This grant, NAG8-831, was a continuation of a previous grant, NAG8-541. The long range goal of this program has been to develop an improved understanding of phenomena of importance to directional solidification, in order to enable explanation and prediction of differences in behavior between solidification on Earth and in space. Emphasis in the recently completed grant was on determining the influence of perturbations on directional solidification of InSb and InSb-GaSb alloys. In particular, the objective was to determine the influence of spin-up/spin-down (ACRT), electric current pulses and vibrations on compositional homogeneity and grain size.

Wilcox, William R.↗

NIFTE: The Near Infrared Faint-Object Telescope Experiment

The high sensitivity of large format InSb arrays can be used to obtain deep images of the sky at 3-5 micrometers. In this spectral range cool or highly redshifted objects (e.g. brown dwarfs and protogalaxies) which are not visible at shorter wavelengths may be observed. Sensitivity at these wavelengths in ground-based observations is severly limited by the thermal flux from the telescope and from the earth's atmosphere. The Near Infrared Faint-Object Telescope Experiment (NIFTE), a 50 cm cooled rocket-borne telescope combined with large format, high performance InSb arrays, can reach a limiting flux less than 1 micro-Jy(1-sigma) over a large field-of-view in a single flight. In comparison, the Infrared Space Observatory (ISO) will require days of observation to reach a sensitivity more than one order of magnitude worse over a similar area of the sky. The deep 3-5 micrometer images obtained by the rocket-borne telescope will assist in determining the nature of faint red objects detected by ground-based telescopes at 2 micrometers, and by ISO at wavelengths longer than 5 micrometers.

Bock, James J.↗

Semiconductor crystal growth in crossed electric and magnetic fields: Center Director's Discretionary Fund

A unique growth cell was designed in which crossed electric and magnetic fields could be separately or simultaneously applied during semiconductor crystal growth. A thermocouple was inserted into an InSb melt inside the growth cell to examine the temperature response of the fluid to applied electromagnetic fields. A static magnetic field suppressed time-dependent convection when a destabilizing thermal field was applied. The simultaneous application of electric and magnetic fields resulted in forced convection in the melt. The InSb ingots grown in the cell were polycrystalline. An InGaSb crystal, 0.5 cm in diameter and 23-cm long, was grown without electromagnetic fields applied. The axial composition results indicated that complete mixing in the melt occurred for this large aspect ratio.

Mazuruk, K.↗

Solidification Using a Baffle in Sealed Ampoules (SUBSA)

Solidification Using a Baffle in Sealed Ampoules (SUBSA) will be the first materials science experiment conducted in the Microgravity Science Glovebox (MSG) Facility at the International Space Station (ISS) Alpha. The launch is schedule for May 31, 2002. Using the specially developed furnace, 10 Te and Zn-doped single crystals of InSb will be directionally solidified in microgravity. A key goal of the SUBSA investigation is to (i) clarify the origin of the melt motion in space laboratories and (ii) to reduce the magnitude of the melt motion to the point that it does not interfere with the transport phenomena. These goals will be accomplished through a special ampoule and furnace design. A disk-shaped baffle, positioned close to the freezing front, is used to reduce melt motion. Furthermore, the solidification will be visualized by using a transparent furnace, with a video camera, continuously sending images to the earth. This allows detection of bubbles and melt de-wetting that could cause surface tension driven convection. In preparation for the space experiments, 30 ground-based experiments were conducted. The results of ground based tests and numerical modeling will be presented. Based on numerical modeling, 12 mm 1D silica ampoules were selected. The small diameter ampoule favors closer placement of the baffle to the interface, without excessive radial segregation caused by forced convection while providing more damping of natural convection. The parts in the silica ampoule include 2 carbon springs made by Energy Science Laboratories, Inc., a pyrocarbon-coated graphite cylinder, pyrocarbon-coated graphite a baffle with the shaft and the InSb charge with the seed crystal grown by W.A. Bonner of Crystallod Inc.

Marin, C.↗

Traveling Magnetic Field Applications for Vertical Bridgman Growth: Modeling and Experiment

Traveling magnetic fields offer a direct control of the metallic melt meridional flow in long cylinders. It induces the Lorentz body force that can counteract with the buoyancy force induced by radial temperature non-uniformity. It can significantly offset a natural convection in the system, or it can even set up the flow in opposite direction, thus affecting the interface shape, the growth rate and macrosegregation. Results of our numerical modeling of the Vertical Bridgman crystal growth of InSb will be discussed. The experimental part of this investigation will address the effect of the applied traveling magnetic fields on the interface shape of InSb crystals. Specifics of the growth apparatus design for this research will be provided in details.

Mazuruk, Konstantin↗

GaAs QWIP Array Containing More Than a Million Pixels

A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 x 1.8- cm GaAs chip. In tests, the array was found to perform well in detecting images at wavelengths from 8 to 9 m in operation at temperatures between 60 and 70 K. The largest-format QWIP prior array that performed successfully in tests contained 512 x 640 pixels. There is continuing development effort directed toward satisfying actual and anticipated demands to increase numbers of pixels and pixel sizes in order to increase the imaging resolution of infrared photodetector arrays. A 1,024 x 1,024-pixel and even larger formats have been achieved in the InSb and HgCdTe material systems, but photodetector arrays in these material systems are very expensive and manufactured by fewer than half a dozen large companies. In contrast, GaAs-photodetector-array technology is very mature, and photodetectors in the GaAs material system can be readily manufactured by a wide range of industrial technologists, by universities, and government laboratories. There is much similarity between processing in the GaAs industry and processing in the pervasive silicon industry. With respect to yield and cost, the performance of GaAs technology substantially exceeds that of InSb and HgCdTe technologies. In addition, GaAs detectors can be designed to respond to any portion of the wavelength range from 3 to about 16 micrometers - a feature that is very desirable for infrared imaging. GaAs QWIP arrays, like the present one, have potential for use as imaging sensors in infrared measuring instruments, infrared medical imaging systems, and infrared cameras.

Jhabvala, Murzy↗

Crystal Growth in the SUBSA furnace in MSG: 2002 to 2022

In 2002, the investigation “Solidification Using a Baffle In Sealed Ampoules (SUBSA)” was the first investigation to utilize the Microgravity Science Glovebox (MSG) Facility on the International Space Station (ISS). The SUBSA furnace was designed for growth of indium antimonide. It features a transparent section, which allows a side view of the melt, the solid-liquid (SL) interface and the growing crystal. In 2002, four Te-doped and three Zn-doped InSb crystals were grown in microgravity. Subsequently, the SUBSA furnace was used in several materials science investigations, including growing the radiation detector materials, InI and Cs2LiYCl6:Ce from the melt and vapor phase (2017 to 2019) and “Brazing of Aluminum alloys in Space (BRAINS)”. A review of the SUBSA furnace features and parameters will be presented, including the design of the growth ampoules, charge preparation, and the procedures used to grow InSb (in 2002) and InI (in 2019).

Aleksandar Ostrogorsky↗

Simulation-Aided Design and Interpretation of Results of Microgravity-Based Solidification Experiments

The preparation and interpretation of microgravity experiments conducted on the International Space Station (ISS) can be challenging because of the remote location of the equipment. Although a “ground unit” is typically available on Earth, it is not located in the laboratory of the principal investigator. Furthermore, test experiments in the ground unit cannot fully duplicate heat transfer conditions of the weightless environment, and thus be a reliable reference for experiment design. Under such conditions, numerical simulations are a valuable tool both for preparing the experiments and interpreting the results obtained under terrestrial and micro-gravity conditions. In this work, we developed a detailed 3D model of the “SUBSA” furnace located at the ISS, and demonstrate its use in our present investigation which includes melt growth and vapor growth of InI crystals on the ISS. In 2002, the SUBSA furnace was designed and built for the growth of InSb crystals in the Microgravity Science Glovebox (MSG) at the ISS. The SUBSA furnace features a transparent section without heating elements, where the axial temperature gradient is high. In our present investigation, we have used the same furnace to grow four InI crystals from the melt, and two InI crystals from the vapor phase (2018-2021). InI crystals have ~20 times lower thermal conductivity than InSb crystals. As a result, during melt growth, the InI crystals were exposed to extremely high temperature gradients. To reduce the axial temperature gradient, we added external jackets made from high thermal conductivity material to the growth ampoules. The SUBSA furnace could not be modeled as asymmetric because of its rectangular shape and right-angled transparent section, which contains a convoluted geometry. The rectangular shape of the transparent section further complicates modelling of radiative heat transfer, which dominates in the zone. At present, numerical simulations are being conducted to resolve an apparent discrepancy between the readings of the 5 thermocouples located in the SUBSA furnace, and the observed position of the solid and molten material. The 3D simulation will be presented, along with the calibration and growth experiment results conducted in microgravity and in the SUBSA ground unit. The developed model should be useful for upcoming microgravity investigations planned to be conducted in the SUBSA facility.

V Riabov↗

Crystal Growth in the SUBSA furnace at the International Space Station (ISS)

In 2002, our investigation Solidification Using a Baffle In Sealed Ampoules (SUBSA) was the first investigation to utilize the Microgravity Science Glovebox (MSG) Facility on the International Space Station (ISS). The SUBSA furnace was designed for growth of indium antimonide. It features a transparent section, which allows a side view of the melt, the solid-liquid (SL) interface and the growing crystal. In 2002, four Te- doped and three Zn-doped InSb crystals were grown in microgravity. Subsequently, the SUBSA furnace was used in several other materials science investigations, including growing the radiation detector materials InI and Cs2LiYCl6:Ce from the melt and vapor phase (2017 to 2019) and Brazing of Aluminum alloys in Space (BRAINS). A review of the SUBSA furnace features and parameters will be presented, including the design of the growth ampoules, charge preparation, and the procedures used to grow InSb (in 2002) and InI (in 2019).

A.G. Ostrogorsk↗

Infrared rocket observations.

IR telescope for rocket observations using liquid nitrogen coolant to eliminate terrestrial and telescope radiation, using InAs and InSb detectors

Harwit, M.↗