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At least 91 records · Page 5

Convection and morphological stability during directional solidification

For growth of a vicinal face at constant velocity, the effect of anisotropic interface kinetics on morphological stability is calculated for a binary alloy. The dependence of the interface kinetic coefficient on crystallographic orientation is based on the motion and density of steps. Anisotropic kinetics give rise to traveling waves along the crystal-melt interface, and can lead to a significant enhancement of morphological stability. The stability enhancement increases as the orientation approaches a singular orientation and as the solidification velocity increases. Shear flows interact with the traveling waves and, depending on the direction of the flow, may either stabilize or destabilize the interface. Specific calculations are carried out for germanium-silicon alloys.

Coriell, Sam R.↗

Nonlinear stability of the dayside cometary ionopause

The MHD stability of the cometary ionopause is investigated by nonlinear analysis, describing that stability in terms of the finite perturbation amplitude of both Kelvin-Helmholtz and Rayleigh-Taylor modes. The evolution of the unstable modes is examined, determining the conditions under which finite amplitude effects are expected to stabilize a growing wave disturbance. The analysis is applied to the ionopause at Comet Halley and Comet Giacobini-Zinner, showing that the theoretical prediction concerning the stability of this interface based on an earlier linear analysis remains valid in both cases despite the nonlinear stabilization effects.

Ershkovich, A. I.↗

Convective influence on the stability of a cylindrical solid-liquid interface

Experiments in which a long vertical, heated wire is surrounded by concentric annuli of a melt and its crystalline solid show that the convection state changes from a stable unicell surrounded by a stationary cylindrical solid-liquid interface, to a complex time-dependent flow surrounded by a rotating, helical solid-liquid interface. This transition occurs at a Grashof number of approximately 150, which is an order of magnitude less than the critical Grashof number calculated for a liquid annulus surrounded by rigid walls. A linear stability analysis has been carried out for an infinitely tall vertical annulus. When the deformable nature of the crystal-melt interface is taken into account in the boundary conditions, two new modes of instability arise. The most dangerous mode is asymmetrical and corresponds to helical waves travelling vertically upwards. The critical Grashof number and the scaling properties of the eigenstate agree with experiments. The results clearly demonstrate the coupling of convection with crystal-melt interfacial instabilities.

Fang, Q. T.↗

Morphological Stability and Fluid Dynamics of Vapor Crystal Growth

A fundamental understanding of the conditions under which crystals can retain morphological stability, i.e., shape stability of the advancing interface, during growth from vapors was studied. Morphological stability (MS) is a necessary condition for the growth of homogeneous single crystals required for numerous device applications. For crystallization from melts, the MS concepts are well developed and are essentially based on heat and mass transfer conditions about the advancing interface. For crystallization from vapors, the MS requirements are more complex and not well understood. The added complexity arises from the fact that anisotropies in interfacial kinetics are typically stronger in crystallization from vapors than from melts. These pronounced anisotropies root in the distinctly lower atomic roughness of most vapor-solid interfaces.

Rosenberger, F.↗

Ballistic electron emission microscopy and spectroscopy of Au/GaAs interfaces

This paper presents the first Schottky barrier results for the Au/GaAs(100) interface prepared completely in situ on GaAs grown by molecular-beam epitaxy. The resulting interface displays unexpected properties which can be interpreted in terms of enhanced electrode interdiffusion. In addition, the capability of molecular-beam epitaxy for in situ processing enables the stabilization of this interface against diffusion and allows the formation of a Au/GaAs system with nearly ideal properties. Newly developed ballistic electron spectroscopy and imaging techniques demonstrate that the heterogeneity present at the interface of Au/GaAs(100) fabricated on chemically treated GaAs substrates is removed.

Kaiser, W. J.↗

Single-mode theory of diffusive layers in thermohaline convection

A two-layer configuration of thermohaline convection is studied, with the principal aim of explaining the observed independence of the buoyancy-flux ratio on the stability parameter when the latter is large. Temperature is destabilizing and salinity is stabilizing, so diffusive interfaces separate the convecting layers. The convection is treated in the single-mode approximation, with a prescribed horizontal planform and wavenumber. Surveys of numerical solutions are presented for a selection of Rayleigh numbers R, stability parameters lambda and horizontal wavenumbers. The solutions yield a buoyancy flux ratio chi that is insensitive to lambda, in accord with laboratory experiments. However chi increases with increasing R, in contradiction to laboratory observations.

Gough, D. O.↗

Stability of capillary surfaces

An extensive data set quantifying the stability limits of capillary surfaces for a wide range of fluid properties, container geometry, and input disturbance and orientation does not currently exist. To begin to provide such a data set an experimental apparatus has been designed for which the dynamics and stability of fluid interfaces will be investigated. The apparatus consists primarily of a programmable shaker table and a high speed motion picture and video camera for viewing the fluid surface as drop tower tests will be performed to note the stability of a variety of surface/vessel configurations.

Weislogel, Mark↗

X-Ray Photoelectron Spectroscopy Study of the Heating Effects on Pd/6H-SiC Schottky Structure

X-ray photoelectron spectroscopy is used to study the effects of heat treatment on the Pd/6H-SiC Schottky diode structure. After heating the structure at 425 C for 140 h, a very thin surface layer of PdO mixed with SiO(x) formed on the palladium surface of the Schottky structure. Heat treatment promoted interfacial diffusion and reaction which significantly broadened the interfacial region. In the interfacial region, the palladium concentration decreases with depth, and the interfacial products are Pd(x)Si (x = 1,2,3,4). In the high Pd concentration regions, Pd4Si is the major silicide component while gr and Pd2Si are major components in the low Pd concentration region. At the center of the interface, where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si, x= 1,2,3,4) are approximately equal. The surface passivation layer composed of PdO and SiO, may significantly affect the electronic and catalytic properties of the surface of the Schottky diode which plays a major role in gas detection. The electronic properties of the Schottky structure may be dominated by a (Pd+Pd(x)Si)/SiC interface. In order to stabilize the properties of the Schottky structure the surface and interface diffusion and reactions must be controlled.

Chen, Liang-Yu↗

AKM capture device

In an effort to recover the Westar and Palapa satellites and the considerable investment each represented, NASA and Hughes undertook the Satellite Retrieval Mission. The mechanism used to capture each of the errant satellites was the AKM (Apogee Kick Motor) Capture Device (ACD), also referred to as the Stinger. The ACD had three interface requirements: interface with the Manned Maneuvering Unit (MMU) for transportation to and stabilization of the spacecrafts; interface with each satellite for retrieval; and finally, interface with the Shuttle's Remote Manipulator System (RMS or robot arm) for satellite transport back to the Orbiter's payload bay. The majority of the design requirements were associated with the capture and release of the satellites. In addition to these unique requirements, the general EVA, RMS grapple, and RMS manipulation requirements applied. These requirements included thermal, glare, snag, RMS runaway and crewman safety considerations.

Harwell, William D.↗

Digital temperature sensor performance assessment report

Performance assessment data accumulated during exposure of the digital temperature sensor to simulated shuttle flight type environments are presented. The test parameters were specifically designed to check the sensor for its: (1) ability to resolve temperature relative to the design specifications; (2) ability to maintain accuracy after interchanging the temperature probes with each electronics interface assembly; (3) stability (i.e., satisfactory operation and accuracy during and after exposure to flight environments); and (4) repeatability, or its ability to produce the same output on subsequent exposures to the identical stimulus. Equipment list, test descriptions, data summary, and conclusions are included.

Canniff, J. H.↗

Review of SERI Solar Pond Work

Development of models of pond thermal performance; analysis of solar pond use for building space heat and hot water production; use of low-temperature pond-produced heat for industrial processes, desalination, and electricity production; development of direct-contact heat exchanger to reduce conversion equipment cost; determination of effects of extracted heat and mass from the storage layer on pond performance; and investigation of factors which determine gradient layer stability and the stability of this interface between this level and the upper and lower convecting layers were described.

Zangrando, F.↗

Interfacial bonding stability

Interfacial bonding stability by in situ ellipsometry was investigated. It is found that: (1) gamma MPS is an effective primer for bonding ethylene vinyl acetate (EVA) to aluminum; (2) ellipsometry is an effective in situ technique for monitoring the stability of polymer/metal interfaces; (3) the aluminized back surface of silicon wafers contain significant amounts of silicon and may have glass like properties.

Boerio, J.↗

A study of the relationship among wind speed, sea state, and the drag coefficient for a developing wave field

Controlled laboratory experiments are reported which demonstrate directly and quantitatively the influence of wave conditions in determining the drag law at the air-sea interface under neutral stability conditions. It is concluded that the analytic form first proposed by Kitaigorodskii (1970) models the roughness scale very well when the sea is dominated by the locally generated waves. It is demonstrated that, by using a unified two-parameter wave spectral model by Huang et al. (1981), Kitaigorodskii's result can be shown to contain the formulas of Charnock (1955) and Hsu (1974) as special cases. The results also identify two wind and wave-related parameters as important in determining the drag coefficient for developing wave fields.

Huang, N. E.↗

Ground-based experiments on the minimization of convection during the growth of crystals from solution

Crystals were grown from solution in the earth's gravitational field with the substantial absence of convection by (1) downward unidirectional growth in an isothermally cooled solution and (2) upward unidirectional growth in a positive vertical thermal gradient. Growth rates were 1.3 to 1.8 times the predictions for convectionless growth, and an order of magnitude less than for growth with vigorous convection. Crystals grown in the isothermal configuration were of comparable or superior quality to those grown with substantial convection. The imposition of a 0.5 to 0.8 C/mm gradient greatly stabilized the growth interface so that flat (001) surfaces could be grown on KDP. Crystals grown in a thermal gradient, however, were filled with far more fluid inclusions than crystals grown isothermally.

Nerad, B. A.↗

A simple time-accurate turbomachinery algorithm with numerical solutions of an uneven blade count configuration

The present computer algorithm for the time-accurate flow analysis of rotating turbomachines is based on the finite-volume method and employs a high-resolution approximate Riemann solver for interface flux definitions and an implicit numerical scheme that possesses apparent unconditional stability. Block-block interfaces, including dynamic ones, are treated in such a way as to mimic interior block communication. The turbomachine configurations treated by way of illustration are 8-8-bladed and 11-9-bladed versions of a contrarotating unducted fan engine.

Janus, J. Mark↗

Morphological instabilities in directional solidification of a binary alloy - End effects

This paper considers the unidirectional solidification of a binary alloy for which the liquid and solid phases are bounded by endwalls. In order to account for the transport of latent heat and solute, thermal and solutal boundary layers must be placed at the solidifying interface. Further, under the assumption of fixed temperature gradients, the presence of the endwalls leads to a velocity of solidification that decreases with time, and hence to an unsteady basic state having a planar interface. From a stability analysis of this state, a nonlinear long-wave evolution equation of Sivashinsky type is derived, with modified coefficients, that shows how the onset of cellular structure is delayed by the presence of endwalls.

Young, Gerald W.↗

Thermochemical analysis of chemical processes relevant to the stability and processing of SiC-reinforced Si3N4 composite

Chemical processes relevant to the stability and processing of SiC-reinforced Si3N4 composites have been examined from thermochemical considerations. The thermodynamic stabilities of various interfaces, such as SiC-Si3N4, SiC-Si3N4-Si2ON2, and SiC-Si3N4-SiO2, have been examined as a function of temperature, and the temperatures above which these interfaces become unstable have been calculated. The degradation of SiC during the processing of the composite has been examined. The processing routes considered in this study include the reaction bonded silicon nitride (RBSN) process and the pressure-assisted sintering processes with suitable sintering additives.

Misra, Ajay K.↗