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At least 91 records · Page 5

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DOE OSTI2022

Fabricating Graphene Oxide/h-BN Metal Insulator Semiconductor Diodes by Nanosecond Laser Irradiation

To employ graphene’s rapid conduction in 2D devices, a heterostructure with a broad bandgap dielectric that is free of traps is required. Within this paradigm, h-BN is a good candidate because of its graphene-like structure and ultrawide bandgap. We show how to make such a heterostructure by irradiating alternating layers of a-C and a-BN film with a nanosecond excimer laser, melting and zone-refining constituent layers in the process. With Raman spectroscopy and ToF-SIMS analyses, we demonstrate this localized zone-refining into phase-pure h-BN and rGO films with distinct Raman vibrational modes and SIMS profile flattening after laser irradiation. Furthermore, in comparing laser-irradiated rGO-Si MS and rGO/h-BN/Si MIS diodes, the MIS diodes exhibit an increased turn-on voltage (4.4 V) and low leakage current. The MIS diode I-V characteristics reveal direct tunneling conduction under low bias and Fowler-Nordheim tunneling in the high-voltage regime, turning the MIS diode ON with improved rectification and current flow. This study sheds light on the nonequilibrium approaches to engineering h-BN and graphene heterostructures for ultrathin field effect transistor device development.

2D materials↗

DOE OSTI2025

Fabrication of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Low gain avalanche detectors (LGADs) offer high temporal resolution for high energy particle detection, which is critical for next generation experiments in hadron colliders. While silicon LGADs (Si-LGADs) have rapidly matured in the last decade, research into silicon carbide (SiC) LGADs has only recently begun. By accounting for fundamental differences in material properties and fabrication processes, we present a prototype device design and process flow for 4H-SiC LGADs with etch-based isolation. Critical steps of the process flow and their results are discussed, including plasma etching, passivation, and the formation of low resistivity contacts. Electrical characterization (I-V, C-V) shows sufficient depletion of the device structure to demonstrate low-gain charge carrier multiplication.

High Energy Physics↗

DOE OSTI2021

The Digital Mirror Langmuir Probe: Field Programmable Gate Array Implementation of Real-Time Langmuir Probe Biasing

High bandwidth, high spatial resolution measurements of electron temperature, density and plasma potential are valuable for resolving turbulence in the boundary plasma of tokamaks. While conventional Langmuir probes can provide such measurements either their temporal or spatial resolution is limited: the former by the sweep rate necessary for obtaining I-V characteristics and the latter by the need to use multiple electrodes, as is the case in triple and double probe configurations. The Mirror Langmuir Probe (MLP) bias technique overcomes these limitations by rapidly switching the voltage on a single electrode cycling between three bias states, each dynamically optimised for the local plasma conditions. The MLP system on Alcator C-Mod used analog circuitry to perform this function, measuring Te, VF, and Isat at 1.1 MSPS. Recently, a new prototype digital MLP controller has been implemented on a Red Pitaya Field Programmable Gate Array (FPGA) board which reproduces the functionality of the original controller and performs all data acquisition. There is also the potential to provide the plasma parameters externally for use with feedback control systems. The use of FPGA technology means the system is readily customisable at a fraction of the development time and implementation cost. A second Red Pitaya was used to test the MLP by simulating the current response of a physical probe using C-Mod experimental measurements. This project is available as a git repository to facilitate extensibility (e.g. real-time control outputs, more voltage states) and scalability through collaboration.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2021

Methods for Evaluating DC Arc Incident Energy in PV Systems: Preprint

Renewable energy systems continue to be one of the fastest growing segments of the energy industry. This paper focuses on the understanding of how photovoltaic (PV) technology behaves under dc arc conditions. Emphasis is placed on the electrical safety aspect of DC arc flash incident energy evaluation. Because of the fast proliferation of PV systems and the lack of formal equivalent calculation guidelines such as IEEE 1584 for AC systems, it has been necessary to rely on different equations and models presented by various researchers over the last few years. This paper discusses the behavior of PV systems under arc conditions and presents the results of available methods to estimate the dc arc flash incident energy. This paper provides a comparative analysis of a proposed arc-flash incident energy calculation method against different laboratory tests including those performed by NREL. Detailed explanations are provided regarding the effect of PV module I-V and P-V curves under arcing conditions. Examples of the application of the proposed calculation method to the test measurements are included.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2022

Arrhenius Analysis of the Degradation Modes in BackFLIP Study of Emerging Photovoltaic Backsheets: Preprint

With increasingly large-scale deployments of photovoltaic (PV) modules to meet global energy demands, interest in better establishing module lifespans is growing. We report on the performance of co-extruded polyolefin- (PO) based backsheets as environmentally friendly alternatives to fluoropolymer-reinforced polyethylene-terephthalate- (PET)-based backsheets using three hygrometric accelerated test conditions. After completing 4000 cumulative hours of aging, we analyzed data from electrical performance (I-V), surface roughness (gloss), and appearance (L, a*, b* color) characterizations are analyzed to quantify degradation rates, quantify the corresponding activation energy, and cross-correlate between the characteristics examined, thereby providing insights into the relationship between physical characteristics and operating performance.

BackFLIP↗

DOE OSTI2022

Local nm-Scale Imaging of Electrical Contact for Series Resistance Degradation of Silicon Solar Cells

We report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility scale solar farm by nm-scale imaging of the local resistance at the Ag/Si interface of c-Si cell front metallization. Our previous work showed that the I-V measurement of individual cells demonstrated exclusively the cell Rs degradation, and the "beads pattern" of electroluminescence indicated the degradation at the Ag grid of front metallization. Scanning spreading resistance microscopy (SSRM) imaging, which is based on the contact mode of atomic force microscopy and taken on the cross-sections of Ag/Si contact, revealed the electrical conduction pathway of Ag particles in point or small area contact with Si cell emitter. The SSRM results illustrated that the number of electrical contacts in the degraded cell decreased largely compared with the unaffected cell, demonstrating the direct cause of the Rs degradation. This reduction in electrical contact in the degraded cell could be caused by a structural change in the Ag grid during long-term field service: The Ag particles in contact with Si aggregate into the Ag bulk and a highly resistive ceramic oxide is formed in a "belt" shape at the Ag/Si interface. This resistive belt with a thickness of ~1 m blocks the current conduction from cell emitter to the Ag grid. The degraded cell shows both a morphological and chemical difference in the screen-printed finger contact compared to the unaffected cell, which likely caused the different degradation susceptibility during the long-term field service. Our results demonstrate an example of the multi-scale characterization approach for understanding photovoltaic degradation mechanisms.

ENGINEERING,SOLAR ENERGY↗

DOE OSTI2025

Field Testing of PID-p Susceptible Bifacial PERC Modules: Impact of Light, Voltage and Module History

This work investigates the potential induced degradation-polarization (PID-p) of bifacial passivated emitter and rear contact (PERC) modules installed in the field at the Florida Solar Energy Center. 22 modules were stressed over 1 year under various voltage (-1500V, -3500, +1500V) and mounting configurations (close to ground, 2 meters from ground, close to roof). The positively stressed modules were anticipated to have experiences PID-p on their front side. However, no degradation was observed, as the light-induced recovery effect effectively counteracted the degradation. The negatively stressed modules experienced Pmax drops during 2 weeks before stabilizing at 5-6% loss. I-V and EL characteristics suggest a PID-p degradation on the rear side. Lower degradation rates are observed with lower voltage and when the mounting configuration allows more albedo light on the rear side to compensate for the degradation. PID-p is observed to stabilize at similar level for the voltage and mounting configuration tested with slightly lower Pmax in winter. EL imaging reveals that cells are not degrading at the same rate across a module. Some cells get darker and then brighter which corresponds to the silicon/passivation interface going through depletion and then inversion when enough positive charges are accumulated. After full light-recovery, the modules were tested again along with 22 brand-new ones to assess the impact of the module history. Results confirmed the trends observed in the first year with PID-p occurring at voltage as low as -600V and recovered modules degrading faster than brand-new ones.

14 SOLAR ENERGY↗

DOE OSTI2020

Impact of Individual Structural Defects in GaAs Solar Cells: A Correlative and In Operando Investigation of Signatures, Structures, and Effects

Defects usually degrade device performance. Thus, many techniques and effort are devoted to studying semiconductor defects. However, it is rarely known: i) how individual defects affect device performance; ii) how the impact depends on the device operating conditions; iii) how the impact varies from one defect to another; and iv) how these variations are correlated to the microscopic-scale defect structure. To address these crucial questions, an array of correlative and spatially resolved techniques, including electroluminescence, photoluminescence, Raman, I–V characteristics, and high-resolution electron microscopy, are used to characterize dislocation defects in GaAs solar cells. Significantly, the study is carried out in a series mode and in operando. This approach provides quantitative and definitive correlation between the atomistic structure of defects and their explicit effects on device performance, thus giving unprecedented insight into defect physics.

dislocation defects↗

DOE OSTI2020

Electro-reduction of organics on metal cathodes: A multiscale-modeling study of benzaldehyde on Au (111)

Here, we present a multiscale modeling study on the electro-reduction of benzaldehyde (BZY) on Au(111) under realistic electrochemical conditions. To model the electrochemical cell, we adopt a capacitor model in which complex solvents are confined between a Au cathode and a carbon anode. Classical molecular dynamics simulations reveal that electrode charge density and the presence of alcohol show strong effects on the density, adsorption geometry and dynamics of benzaldehyde on the Au electrode. Under charging conditions, the surface concentration of benzaldehyde on the Au electrode decreases, while the content of other species increases. Finally, we proposed a scheme that correlates the electric current running through the Au/solvent interface with the applied bias. This study provides a molecular level understanding of how solvent composition, in this case water/alcohol content, controls the activity of electrocatalytic hydrogenation

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

The Langmuir probe system in the Wendelstein 7-X test divertor

Here, the design and evaluation of the Langmuir probe system used in the first divertor operation phase of Wendelstein 7-X is described. The probes are integrated into the target plates and have individually facetted surfaces to keep the angle of incidence of the magnetic field within an appropriate range for different magnetic configurations. Multiple models for the derivation of plasma parameters from current–voltage characteristics are introduced. These are analyzed with regard to their assumptions and limitations, generalized, and adapted to our use case. A detailed comparison is made to determine the most suitable model. It is found that the choice of model has a large impact, for example, resulting in a change in the inferred temperatures of up to a factor two. This evaluation is implemented in a Bayesian modeling framework and automated to allow for joint analysis with other diagnostics and a replacement of ad hoc assumptions. We rigorously treat parameter uncertainties, revealing strong correlations between them. General and flexible model formulations permit an expansion to additional effects.

47 OTHER INSTRUMENTATION↗

DOE OSTI2020

Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts

In this work, a high-sensitivity 4H–SiC temperature sensor and an alpha detector have been fabricated using additively printed metal contacts. The surface morphology and electrical conductivity of the printed electrodes were established prior to Schottky diode development. 4H–SiC Schottky diodes with direct-write printed silver contacts on the 5 μ m-thick epilayer on 4H–SiC were characterized electrically in terms of the forward and reverse current–voltage and high-frequency capacitance–voltage characteristics. Furthermore, the turn-on voltage of the Schottky diodes, as established from the forward current–voltage characteristics measured up to a temperature of 400 °C, showed a linear temperature dependence. Schottky diodes with direct-write printed Ag electrodes were able to measure alpha particles emitted from Americium-241. The high temperature and radiation response of the Schottky diodes show their suitability for multi-modal sensor fusion on the 4H–SiC platform for harsh environment applications.

42 ENGINEERING↗

DOE OSTI2020

Measurement and modeling of the radio frequency sheath impedance in a large magnetized plasma

The DC and RF properties of radio frequency (RF) driven sheaths were studied in the Large Plasma Device (LAPD) at the University of California, Los Angeles. The experiments diagnosed RF sheaths on field lines connected to a grounded plate at one end and an ion cyclotron range of frequencies (ICRF) antenna at the other end. The experimental setup permitted measurement of the RF sheath impedance at the plate as a function of DC sheath voltage, with the latter controlled by varying the RF current applied to the antenna. Here, the DC current-voltage characteristics of these sheaths and the RF sheath impedance measurements were compared with modeling. Hot electrons, present in the LAPD plasma, were inferred to contribute significantly to both the DC and RF currents and hence the RF impedance. It was postulated that at very low power hot electrons could not access the region of the plasma subject to RF waves, resulting in an increased RF impedance. Within some experimental limitations and significant assumptions, an RF sheath impedance model was verified by the experimental data.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2020

Characterizing TES Power Noise for Future Single Optical-Phonon and Infrared-Photon Detectors

In this letter, we present the performance of a 100 μm × 400 μm × 40 nm W Transition-Edge Sensor with a critical temperature of 40 mK. This device has a noise equivalent power of 1.5×10-18 W/Hz, in a bandwidth of 2.6 kHz, indicating a resolution for Dirac delta energy depositions of 40 ± 5 meV (rms). The performance demonstrated by this device is a critical step toward developing a O(100) meV threshold athermal phonon detector for low-mass dark matter searches.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2020

Materials Data on VI3 by Materials Project

VI3 crystallizes in the hexagonal P6_3/mmc space group. The structure is one-dimensional and consists of two VI3 ribbons oriented in the (0, 0, 1) direction. V3+ is bonded to six equivalent I1- atoms to form distorted face-sharing VI6 pentagonal pyramids. All V–I bond lengths are 2.79 Å. I1- is bonded in an L-shaped geometry to two equivalent V3+ atoms.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Materials Data on VI2 by Materials Project

VI2 is trigonal omega structured and crystallizes in the trigonal P-3m1 space group. The structure is two-dimensional and consists of one VI2 sheet oriented in the (0, 0, 1) direction. V2+ is bonded to six equivalent I1- atoms to form edge-sharing VI6 octahedra. All V–I bond lengths are 2.85 Å. I1- is bonded in a distorted T-shaped geometry to three equivalent V2+ atoms.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Materials Data on VI by Materials Project

VI is Wurtzite structured and crystallizes in the hexagonal P6_3mc space group. The structure is three-dimensional. V is bonded to four equivalent I atoms to form distorted corner-sharing VI4 trigonal pyramids. There are one shorter (2.79 Å) and three longer (2.81 Å) V–I bond lengths. I is bonded to four equivalent V atoms to form distorted corner-sharing IV4 trigonal pyramids.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Power Electronics Based Self-Monitoring and Diagnosing for Photovoltaic Systems

Faults in photovoltaic (PV) systems can seriously affect the efficiency, energy yield, cost, safety, and reliability of PV plants. Condition monitoring of PV plants is, therefore, a very important approach to estimating the health condition of PV modules and power electronics in the system. However, additional hardware for PV system monitoring adds cost to the system's operation; delayed maintenance service also causes additional energy production loss. The Center for Power Electronics Systems (CPES) at the Virginia Polytechnic Institute and State University and Siemens Cooperate Research developed the online impedance measurement for a PV panel self-monitoring and diagnosing technology using the DC-DC converter connected to the panel. Small-signal impedances of a monocrystalline silicon PV panel were modeled and simulated to reflect fault conditions such as the short-circuit, hot-spot, and junction box faults. Modeling and simulation results were validated firstly using a test setup consisting of a solar simulator, a network analyzer, small-signal injectors, and a monocrystalline PV panel rated at 300 W.

14 SOLAR ENERGY↗

DOE OSTI2024

Contactless Production Testing of Silicon Solar Cells

Critical cost reductions in silicon solar cells are made by minimizing silver usage in their metal contacts. The reason why is both clear and unavoidable—silver is not only expensive, but also a potential limiting resource for scale-up (the PV industry alone used 10.3 % of the global silver supply in 2020 [1]). The result is solar cells with vanishing electrical contact area that are extremely difficult to test prior to module manufacture, when they must be sorted for quality to maximize power output and reliability of the subsequent modules. This project developed a new measurement instrument that enables the transition to solar cells with very low silver content, including cell designs with both minimal busbars and no busbars at all to electrically contact. The resulting instrument at project completion demonstrated the ability to sort cells with comparable—or better—results than existing technology. Compared to existing cell-test instruments, the new tool has minimal contacting requirements, which lowers the maintenance costs and use of consumable parts. We demonstrated innovative, yet pragmatic, solutions for reporting a comprehensive set of measurement results useful for both cell sorting (going forward in the line for module manufacture) and process control (looking backward in the line to identify cell manufacturing issues from wafer to cell-test). In addition to the traditional current-voltage characterization at cell test—short circuit current, open-circuit voltage, power, efficiency and fill factor—the new tool maintains all the advanced parameter characterization of our existing product line such as a substrate doping measurement, carrier recombination (lifetime) analysis, and surface recombination analysis.

14 SOLAR ENERGY↗