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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Characterisation of signal-induced noise in Hamamatsu R11265 Multianode Photomultiplier Tubes

Signal-induced noise is observed in Hamamatsu R11265 Multianode Photomultiplier Tubes, manifesting up to several microseconds after the single photoelectron response signal and localised in specific anodes. The mean number of noise pulses varies between devices, and shows significant dependence on the applied high-voltage. The characterisation of this noise and the mitigation strategies to perform optimal single-photon counting at 40 MHz, as required by the LHCb Ring-Imaging Cherenkov detectors, are reported.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

The Readout Electronics of the Mu2e Electromagnetic Calorimeter

The Mu2e electromagnetic calorimeter has been designed to measure ~100 MeV electrons with energy resolution σE/E <10%, time resolution σt < 500ps and position resolution σx < 1cm. The detector is composed of 1348 un-doped CsI crystals coupled to two large area Silicon Photomultipliers (SiPMs). Each SiPM is connected to a Front End Electronics (FEE) chip which hosts the shaping amplifier and the high voltage linear regulator. A group of 20 FEE is controlled by one Mezzanine Board (MB) which transmits the amplified signals to one Digitizer ReAdout Controller board (DiRAC). The DiRAC samples the waveforms at 200 MHz with 12-bit ADCs, packs the data according to the Mu2e custom format and transmits them to the event builder through an optical transceiver. To limit the number of pass-through connectors and the length of the cables, the readout and digitization electronics is located inside the detector cryostat and close to the interaction target. The boards will have to sustain a neutron fluence of about 5x10 10 n/cm 2 @ 1 MeVeq (Si)/y and a Total Ionizing Dose of about 12 krad, while working into a 1T magnetic field and a vacuum of 10 (-4) Torr. This harsh operational environment has made the electronics design challenging and required an extended campaign of tests to select and qualify the employed electronic components. In this paper we report on the board architecture and design, on the qualification of the prototypes, as well as on the results of the first vertical slice test of the Mu2e calorimeter.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

RD53A: A large-scale prototype chip for the phase II upgrade in the serially powered HL-LHC pixel detectors

The phase II upgrade of the HL-LHC experiments within the LHC intends to deepen the studies of the Higgs boson and to allow the discovery of further particles by adding an integrated luminosity of about 4000 fb -1 over 10 years of operation. This upgrade would overwhelm the installed pixel detector readout chips with higher hit rates and radiation levels than ever before. To match these extreme requirements the RD53 collaboration, a joint effort between ATLAS and CMS, developed RD53A, a new generation pixel detector readout chip prototype manufactured in a 65 nm CMOS technology. It is half the size of the final pixel chips and designed to meet requirements in the face of 3 GHz/cm 2 hit rate after irradiation to 500 Mrad. The detector is able to use 50×50 μm 2 or 25×100 μm 2 pixels with high readout speed of up to 4 links per chip with 1.28 Gbit/s each. Shunt–LDO regulators integrated on the bottom of the chip provide the required voltages to the two power domains, analog and digital. These regulators enable serial powering of the pixel modules, which is the only feasible, radiation hard scheme to ensure acceptable power cable losses and to stay within the material budget for the future pixel detectors. Finally, an overview of the status and challenges of serial powering and the Shunt–LDO regulator development will be given.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

High-resolution radiation detection using Ni/SiO 2 /n-4H-SiC vertical metal-oxide-semiconductor capacitor

In this article, we demonstrate the radiation detection performance of vertical metal-oxide-semiconductor (MOS) capacitors fabricated on 20 μm thick n-4H-SiC epitaxial layers with the highest energy resolution ever reported. The 100 nm SiO2 layer was achieved on the Si face of n-4H-SiC epilayers using dry oxidation in air. The Ni/SiO2/n-4H-SiC MOS detectors not only demonstrated an excellent energy resolution of 0.42% (ΔE/E 100) for 5.48 MeV alpha particles but also caused a lower enhancement in the electronic noise components of the spectrometer compared with that observed for the best high-resolution Schottky barrier detectors. The MOS detectors also exhibited a high charge collection efficiency (CCE) of 96% at the optimized operating bias despite the presence of the oxide layer. A drift-diffusion model applied to the CCE vs gate bias voltage data revealed a minority (hole) carrier diffusion length of 24 μm. Capacitance mode deep level transient spectroscopy (C-DLTS) scans in the temperature range 84–800 K were carried out to identify the resolution limiting electrically active defects. Interestingly, the C-DLTS spectra revealed both positive and negative peaks, indicating the simultaneous presence of electron (majority) and hole (minority) trap centers. It has been inferred that at the steady-state bias for the C-DLTS measurement, the MOS detector operates in the inversion mode at certain device temperatures, causing holes to populate the minority trap centers and, hence, manifests minority carrier peaks as well.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

A flexible test facility for liquid xenon detector development

As liquid xenon time projection chambers scale to ever-larger sizes, so too do the engineering challenges they pose. Here, we describe a large, flexible, multipurpose test facility capable of supporting the development of a number of key aspects of liquid xenon detector systems. Example applications of this facility include characterization of large-area light and charge sensor arrays, tests of xenon purification techniques and materials compatibility, and investigations into high-voltage phenomena. This facility uses an automated and remotely monitored cryo-cooling system based on immersion of the test chamber in a liquid bath rather than conductive coupling, leading to advantages in temperature and pressure stability, as well as increasing required response times in the case of cooling-power loss. Design advantages, operational procedures, and performance of the facility are described, as well as five examples of liquid xenon test chambers that use the facility.

Dark Matter detectors↗
DOE OSTI2022

Low voltage AC electroluminescence in silicon MOS capacitors

Low power silicon based light source and detector are attractive for on-chip photonic circuits given their ease of process integration. However, conventional silicon light emitting diodes emit photons with energies near the band edge where the corresponding silicon photodetectors lack responsivity. On the other hand, previously reported hot carrier electroluminescent silicon devices utilizing a reverse biased diode require high operating voltages. Here, we investigate hot carrier electroluminescence in silicon metal–oxide–semiconductor capacitors operating under transient voltage conditions. Further, during each voltage transient, large energy band bending is created at the edge of the source contact, much larger than what is achievable at a steady state. As a result, electrons and holes are injected efficiently from a single source contact into the silicon channel at the corresponding voltage transient, where they subsequently undergo impact ionization and phonon-assisted interband recombination. Notably, we show low voltage operation down to 2.8 V by using a 20 nm thick high-κ gate dielectric. We show further voltage scaling is possible by reducing the gate dielectric thickness, thus presenting a low voltage platform for silicon optoelectronic integrated circuits.

42 ENGINEERING↗
DOE OSTI2022

Machine Learning-based Cyber-Physical Anomaly Detection in Wide Area Voltage Control Systems

Wide-area voltage control systems (WAVCS) are widely deployed in power grid to improve the voltage stability in transmission system using Flexible AC Transmission System (FACTS) devices. The WAVCS relies on wide-area measurement and control signals for closed-loop control of FACTS devices to improve the transient voltage stability in power grid in real-time. Since the WAVCS utilizes a cyber-layer communication during its normal operation, they are susceptible to cyber attacks from adversaries which can lead to a voltage collapse if the attacks go undetected and unmitigated. This paper proposes a supervised machine learning (ML)-based anomaly detection algorithm for detecting various stealthy cyber attacks in the context of WAVCS cybersecurity. In particular, a fuzzy logic-based wide-area controller, as proposed by the Bonneville Power Administration (BPA), is implemented on the Kundur’s four machine two-area system that is integrated with a static var compensator (SVC) to improve voltage profile on sensitive buses. Later, different types of data integrity attacks, including pulse and ramp attacks, are considered on the wide-area measurement and control signals to analyze the performance of the proposed anomaly detector. Our experimental evaluation shows a promising performance with a high true-positive rate (more than 99%) and low false-negative rate (less than 1%) while exhibiting a small prediction time.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Performance of microchannel plate based detectors for <25 keV x rays: Monte Carlo simulations and comparisons with experimental results

We present the results of Monte Carlo simulations of the microchannel plate (MCP) response to x rays in the 250 eV to 25 keV energy range as a function of both x-ray energy and impact angle and their comparisons with the experimental results from the X8A beamline at the National Synchrotron Light Source at Brookhaven National Laboratory. Incoming x rays interact with the lead glass of the microchannel plate, producing photoelectrons. Transport of the photoelectrons is neglected in this model, and it is assumed that photoelectrons deposit all their energy at the point they are created. This deposition leads to the generation of many secondary electrons, some fraction of which diffuse to the MCP pore surface where they can initiate secondary electron cascades in the pore under an external voltage bias. X-ray penetration through multiple MCP pore walls is increasingly important above 5 keV, and the effect of this penetration on MCP performance is studied. In agreement with past measurements, we find that the dependence of MCP sensitivity with angle relative to the pore bias changes from a cotangent dependence to angular independence and then proceeds to a secant dependence as the x-ray energy increases. We also find that with the increasing x-ray energy, the MCP gain sensitivity as a function of bias voltage decreases. The simulations also demonstrate that for x rays incident normal to the MCP surface, spatial resolution shows little dependence on the x-ray energy but degrades with the increasing x-ray energy as the angle of incidence relative to the surface normal increases. This agrees with experimental measurements. Simulation studies have also been completed for MCPs gated with a subnanosecond voltage pulse. In this work, we find that the optical gate profile width increases as the x-ray energy is increased above 5 keV, a consequence of increased x-ray penetration at energies >5 keV. Simulations of the pulsed dynamic range show that the dynamic range varies between ~100 and 1000 depending on x-ray energy and peak voltage.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

A sensitive and robust thin-film x-ray detector using 2D layered perovskite diodes

Solid-state radiation detectors, using crystalline semiconductors to convert radiation photons to electrical charges, outperform other technologies with high detectivity and sensitivity. Here, we demonstrate a thin-film x-ray detector comprised with highly crystalline two-dimensional Ruddlesden-Popper phase layered perovskites fabricated in a fully depleted p-i-n architecture. It shows high diode resistivity of 10 12 ohm·cm in reverse-bias regime leading to a high x-ray detecting sensitivity up to 0.276 C Gy air –1 cm –3 . Such high signal is collected by the built-in potential underpinning operation of primary photocurrent device with robust operation. The detectors generate substantial x-ray photon–induced open-circuit voltages that offer an alternative detecting mechanism. Furthermore, our findings suggest a new generation of x-ray detectors based on low-cost layered perovskite thin films for future x-ray imaging technologies.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

The performance evaluation of direct detection electron energy-loss spectroscopy at 200 kV and 80 kV accelerating voltages

Direct electron detectors (DeDs) have been widely used for imaging studies because of their higher beam sensitivity, lower noise, improved pixel resolution, etc. However, there have been limited studies related to the performance in spectroscopic applications for the direct electron detection. Hereby, taking the advantage of the DeD installed on a high-performance electron energy-loss spectrometer, we systematically studied the performance of a DeD (Gatan's K2 IS) fitted on an aberration-corrected transmission electron microscope (TEM) equipped with an electron monochromator. Using SrTiO3 as the model system, the point spread function in the zero-loss region of the spectrum and the performance for core loss spectroscopy have been investigated under both 200 kV and 80 kV operating conditions. We demonstrate that the K2 detector can achieve an overall better performance at 200 kV than a charge coupled device (CCD) detector. At 80 kV, the K2 DeD is still better than a CCD, except for the relative broad tails of the zero-loss peak. The signal-to-noise ratio is very close for DeD and CCD under 80 kV. Based on our data obtained at different operating voltages, it is clear that DeD will benefit the microscopy community and boost the development of cutting-edge materials science studies by pushing the frontiers in electron energy-loss spectroscopy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Status of LBNF/DUNE near site liquid argon proximity and external cryogenics systems development.

The Deep Underground Neutrino Experiment (DUNE) near site located at Fermilab will host the neutrino beam complex. It includes a high voltage liquid argon time projection chamber located 60-meter underground used as beamline instrumentation. The LAr cryogenic system provided by the Long-Baseline Neutrino Facility (LBNF) regulates thermohydraulic conditions of the membrane cryostat hosting the detector with 285 Ton purified LAr. The purification system uses molecular sieve and copper oxide pellets to manage the argon contamination below 100 ppt (parts per trillion) oxygen equivalent. The detector and its cryogenics are capable to move a stroke of 30 meters on/off beam. The cryogenic system modes of operation include the cryostat pressure test, purge in open loop, detector cooldown, cryostat fill, closed loop purification, liquid empty, and purification system activation/regeneration process. The system design status and schedule, and technical details such as operating modes and interfaces are reported in this paper.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Response of AC-coupled Low Gain Avalanche Detectors to Ionizing and Non-ionizing Radiation Damage

Low gain avalanche diodes with DC- and AC-coupled readout were exposed to ionizing and non-ionizing radiation at levels relevant to future experiments in particle, nuclear, and medical physics and to astrophysics. Damage-related change in their acceptor removal constants and in the resistivity of the region between the guard ring and the active area are reported, as is change in the leakage current and depletion voltages of the active volumes.

FOS: Physical sciences↗
DOE OSTI2024

The 4D Camera: An 87 kHz Direct Electron Detector for Scanning/Transmission Electron Microscopy

We describe the development, operation, and application of the 4D Camera—a 576 by 576 pixel active pixel sensor for scanning/transmission electron microscopy which operates at 87,000 Hz. The detector generates data at ~480 Gbit/s which is captured by dedicated receiver computers with a parallelized software infrastructure that has been implemented to process the resulting 10–700 Gigabyte-sized raw datasets. The back illuminated detector provides the ability to detect single electron events at accelerating voltages from 30 to 300 kV. Through electron counting, the resulting sparse data sets are reduced in size by 10--300× compared to the raw data, and open-source sparsity-based processing algorithms offer rapid data analysis. The high frame rate allows for large and complex scanning diffraction experiments to be accomplished with typical scanning transmission electron microscopy scanning parameters.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Layout and performance of HPK prototype LGAD sensors for the High-Granularity Timing Detector

The High-Granularity Timing Detector is a detector proposed for the ATLAS Phase II upgrade. The detector, based on the Low-Gain Avalanche Detector (LGAD) technology, will cover the pseudo-rapidity region of 2.4 < |n| < 4.0 with two end caps on each side and a total area of 6.4 m 2 . The timing performance can be improved by implanting an internal gain layer that can produce signals with a fast rising edge. It significantly improves the signal-to-noise ratio. The required average timing resolution per track for a minimum ionizing particle is 30 ps at the start and 50 ps at the end of the HL-LHC operation. This is achieved with several layers of LGAD. The innermost region of the detector would accumulate a 1MeV neutron-equivalent fluence up to 2.5 10 15 n eq /cm 2 including a safety factor of 1.5 before being replaced during the scheduled shutdowns. The addition of this new detector is expected to play an important role in the mitigation of high pile-ups at the HL-LHC. The layout and performance of the various versions of LGAD prototypes produced by Hamamatsu (HPK) have been studied by the ATLAS Collaboration. The breakdown voltages, depletion voltages, inter-pad gaps, collected charge as well as the time resolution have been measured and the production yield of large size sensors has been evaluated.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

AI for Experimental Controls at Jefferson Lab

We report the AI for Experimental Controls project is developing an AI system to control and calibrate detector systems located at Jefferson Laboratory. Currently, calibrations are performed offline and require significant time and attention from experts. This work would reduce the amount of data and the amount of time spent calibrating in an offline setting. The first use case involves the Central Drift Chamber (CDC) located inside the GlueX spectrometer in Hall D. We use a combination of environmental and experimental data, such as atmospheric pressure, gas temperature, and the flux of incident particles as inputs to a sequential Neural Network (NN) to recommend a high voltage setting and the corresponding calibration constants in order to maintain consistent gain and optimal resolution throughout the experiment. Utilizing AI in this manner represents an initial shift from offline calibration towards near real time calibrations performed at Jefferson Laboratory.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Characterizing novel Indium Phosphide pad detectors with focused X-ray beams and laboratory tests

Future tracking systems in High Energy Physics experiments will require large instrumented areas with low radiation length. Crystalline silicon sensors have been used in tracking systems for decades, but are difficult to manufacture and costly to produce for large areas. We are exploring alternative sensor materials that are amenable to fast fabrication techniques used for thin film devices. Indium Phosphide pad sensors were fabricated at Argonne National Lab using commercially available InP:Fe 2-inch mono-crystal substrates. Current-voltage and capacitance-voltage characterizations were performed to study the basic operating characteristics of a group of sensors. Micro-focused X-ray beams at Canadian Light Source and Diamond Light Source were used to study the response to ionizing radiation, and characterize the uniformity of the response for several devices. Electrical test results showed a high degree of performance uniformity between the 48 tested devices. X-ray test beam results showed good performance uniformity within tested devices after accounting for spatially-local defects and edge fields. As a result, this motivates further studies into thin film devices for future tracking detectors.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Capacitance–voltage modeling of mid-wavelength infrared nBn detectors

Capacitance–voltage measurements are a powerful technique to determine doping profiles of semiconductor pn junctions and Schottky barrier diodes. The measurements were recently extended to III-V-based mid-wavelength nBn infrared detectors, and absorber doping densities have been extracted using the widely accepted Schottky approximation, where the potential drop across the device is assumed to be across the depleting absorber layer. However, this approach is limited to when the absorber region of the nBn is under high reverse bias and thus is only able to extract the absorber region doping profile. Here, we introduce a semi-analytical model that is capable of extracting barrier dopant polarity, doping concentration, and thickness, as well as contact and absorber layer doping concentrations, all from a capacitance–voltage measurement. Rather than solely considering the potential drop across the depleting layers, it considers the potential drop across the accumulating layer as well. This negative charge accumulation occurs for the contact and absorber layers in the case of reverse and forward biases, respectively. This allows for a single model to be applied to a capacitance–voltage curve at forward and reverse biases and it can provide regions of bias where the absorber transitions from depletion to accumulation. We compare the agreement of the semianalytical model with modeling results from commercially available finite element method software and experimental capacitance–voltage data. Finally, we show that the method is consistent with the Schottky approximation of extracting absorber doping densities at high reverse bias and discuss the model's limitations.

Physics↗