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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Electrical characterization of Hg(1-x)Cd(x)Te alloys

Theoretical models are described for calculations of charge-carrier concentrations, Fermi energy, and conduction electron mobility as functions of x, temperature, and ionized and neutral defect concentrations of Hg(1-x)Cd(x)Te alloys. Measurements are reported of electron concentration and electron mobility from 5-300 K for alloys with x values of between 0.17 and 0.30. The electrical data are in reasonable agreement with theory, and were analyzed to obtain estimates of donor and acceptor state concentrations. The electron mobilities are calculated in terms of a microscopic theory of electrical conduction derived from the solution of the Boltzmann equation for the perturbed steady-state electron distribution function, and they show that longitudinal optical-phonon and charged and neutral defect scattering are the dominant mobility-limiting mechanisms.

Lehoczky, S. L.↗
NASA NTRS1983

Measured thermal diffusivity of Hg(1-x)Cd(x)Te solids and melts

The thermal diffusivity of Hg(1-x)Cd(x)Te melts is found to rise rapidly with temperature to values characteristic of metals. Solid and melt diffusivities for values of x from 0 to 0.3 and over a temperature range from 150 to 900 C have been determined by the laser flash method of Parker, Taylor, and Cowan. The diffusivity decreases from a maximum at x = 0 in both the solid and the liquid, with the values observed at x = 0.3 being about 40 percent of those for x = 0. The solid diffusivity for x = 0 is 1.7 sq mm/s at 150 C, decreasing to 0.7 sq mm/s at the melting point. The x = 0 liquid diffusivity increases from 0.7 sq mm/s at the melting point to 3.5 sq mm/s at 900 C.

Holland, L. R.↗
NASA NTRS1984

Further comments on segregation during Bridgman growth of Cd(x)Hg(1-x)Te

The authors comment on recent papers published by Capper et al. (1983) and Jones et al. (1983) which report and discuss the variation of composition with axial position in Bridgman-grown Cd(x)Hg(1-x)Te alloys. The validity of a diffusion-controlled model for non-mixing growth conditions is particularly noted.

Lehoczky, S. L.↗
NASA NTRS1986

Heat capacity, enthalpy of mixing, and thermal conductivity of Hg(1-x)Cd(x)Te pseudobinary melts

Heat capacity and enthalpy of mixing of Hg(1-x)Cd(x)Te pseudobinary melts were calculated assuming an associated solution model for the liquid phase. The thermal conductivity of the pseudobinary melts for x = 0, 0.05, 0.1, and 0.2 was then calculated from the heat capacity values and the experimental values of thermal diffusivity and density for these melts. The thermal conductivity for the pseudobinary solid solution is also discussed.

Su, Ching-Hua↗
NASA NTRS1987

Experimental and theoretical investigations of the optogalvanic effect in a Hg-Ar discharge

The optogalvanic effect induced in a Hg-Ar discharge by light at 546.1 nm is studied experimentally and theoretically. The plasma and its response to a disturbance in the atomic-level populations are described entirely in terms of electron collision cross sections and other fundamental parameters. In a detailed description of the laser interaction with the atomic system, it was necessary to take into account velocity-changing collisions (VCC). These collisions (VCC) strongly modify the interaction between the Doppler-broadened system and the optical field. In some Doppler-free optogalvanic spectra the dramatic influence of VCC on the velocity distribution of atomic-level population is evident. Measurements of the magnitude of the optogalvanic signal confirm most of the theoretical results. Some anomalous features of the impedance change due to a weak beam were observed when a strong counterpropagating beam was introduced.

Richardson, W. H.↗
NASA NTRS1989

Mass flux and crystal composition in the Hg(0.8)Cd(0.2)Te-HgI2 vapor transport system

Chemical vapor transport (CVT) studies of the Hg(0.8)Cd(0.2)Te-HgI2 system were performed to further test and extend the transport model developed earlier in this laboratory for this system. Experimental results in terms of mass transport rates and composition of the grown crystals as a function of growth temperature and of transport agent (HgI2) pressure, for a fixed source temperature (590 C), are compared with theoretically predicted data. The good agreement between experimental and theoretical results confirms the validity of the model applied to the CVT process of this system.

Wiedemeier, Heribert↗
NASA NTRS1990

Growth and properties of Hg-based quantum well structures and superlattices

An overview of the properties of HgTe-CdTe quantum well structures and superlattices (SL) is presented. These new quantum structures are candidates for use as new long wavelength infrared (LWIR) and very long wavelength infrared (VLWIR) detectors, as well as for other optoelectronic applications. Much has been learned within the past two years about the physics of such structures. The valence band offset has been determined to be approx. 350 meV, independent of temperature. The occurrence of electron and hole mobilities in excess of 10(exp 5)cm(exp 2)/V center dot s is now understood on the basis of SL band structure calculations. The in-plane and out-of-plane electron and hole effective masses have been measured and interpreted theoretically for HgTe-CdTe superlattices. Controlled substitutional doping of superlattices has recently been achieved at North Carolina State University (NCSU), and modulation-doped SLs have now been successfully grown and studied. Most recently, a dramatic lowering of the growth temperature of Hg-based quantum well structure and SLs (to approx. 100 C) has been achieved by means of photoassisted molecular beam epitaxy (MBE) at NCSU. A number of new devices have been fabricated from these doped multilayers.

Schetzina, J. F.↗
NASA NTRS1990

Ultra-stable Hg(+) trapped ion frequency standard

A fieldable trapped ion frequency standard based on Hg-199(+) ions confined in a hybrid rf/dc linear ion trap is developed. This trap permits storage of large numbers of ions with reduced susceptibility to the second-order Doppler effect caused by the rf confining fields. In preliminary measurements a stability of 2 to 3 x 10(exp -15) was obtained for 10000 second averaging times. These measurements were carried out with a 120 mHz wide atomic resonance line for the 40.5 GHz clock transition with a second order Doppler shift from the rf trapping field of 6 x 10(exp -13).

Prestage, John D.↗
NASA NTRS1991

Characterization of directionally solidified Hg(1-x)Zn(x)Se semiconducting alloys

Hg(1-x)Zn(x)Se alloys with composition between x = 0.08 and 0.115 were synthesized from elemental constituents and were resolidified using a Bridgman-Stockbarger growth technique. By performing precision mass-density measurements on selected wafers cut perpendicular to the growth axis, it was shown that the axial compositional profiles fit a numerical solution to the 1D diffusion equation which takes into account the variation of interface velocity with time. Infrared transmission-edge measurements performed on selected transverse slices from each ingot showed that the relative radial variations in composition decreased with decreasing growth rate. Van der Pauw measurements on selected wafers showed that the 10 exp 18/cu cm electron concentration, typical of as-grown crystals, could be reduced by approximately an order of magnitude by annealing in Se vapor.

Cobb, S. D.↗
NASA NTRS1996

Phase Diagram of HgTe -ZnTe Pseudobinary and Density, Heat Capacity, and Enthalphy of Mixing of Hg(sub 1-x)Zn(sub x)Te Pseudobinary Melts

In this article, the solidus temperatures of the Hg(sub 1-x) Zn(sub x)Te pseudobinary phase diagram for several compositions in the low x region were measured by differential thermal analysis and the HgTe-ZnTe pseudobinary phase diagram was constructed. The densities of two HgZnTe melts, x = 0.10 and 0.16, were determined by an in situ pycnometric technique in a transparent furnace over, respectively, 110 and 50 C ranges of temperature. The thermodynamic properties of the melts, such as the heat capacity and enthalpy of mixing, were calculated for temperatures between the liquidus and 1500 C by assuming an associated solution model for the liquid phase.

Su, Ching-Hua↗
NASA NTRS1996

Viscosity of Hg(0.84)Zn(0.16)Te Pseudobinary Melt

An oscillating-cup viscometer was developed to measure viscosity of molten HgZnTe ternary semiconductor alloys. Data were collected for the pseudobinary Hg(0.84)Zn(0.16)Te melt between 770 and 850 C. The kinematic viscosity was found to vary from approximately 1.1 to 1.4 x 10(sup -3)sq cm/s. A slow relaxation phenomena was also observed for temperatures from the melting point of 770 to approx. 800 C. Possible mechanisms for this effect are discussed.

Mazuruk, K.↗
NASA NTRS1999

Effects of an Applied Magnetic Field on the Directional Solidification of Hg(1-x)Zn(x)Se Alloys

Directionally solidified Hg(0.9)Zn(0.1)Se alloys were studied as an alternative to HgCdTe for the detection of electromagnetic radiation because of predicted improvements in lattice stability. Several boules were grown using a modified Bridgman-Stockbarger method and in an applied magnetic field. Axial compositional profiles showed mass transfer was primarily diffusion controlled. Radial compositional variations were greatly reduced when solidification occurred in an applied magnetic field. Microstructural characteristics and dislocation etch pit densities were greatly improved over HgTe based alloys. The extreme importance of processing conditions on defect generation was illustrated by comparing ampoule configurations and thermal profiles.

Cobb, S. D.↗
NASA NTRS2003

Analysis of Radial Segregation in Directionally Solidified Hg(0.89)Mn(0.11)Te

Bridgman growth experiments were performed on Hg(0.89)Mn(0.11)Te (MMT) to determine the extent of radial Manganese segregation during directional solidification. MMT crystals were directionally solidified at rates of 0.09 and 0.18 p d s and in axial thermal gradients of 83 and 68"C/cm. Wavelength Dispersive Spectroscopy (WDS) and Fourier Transform Infra-Red (FTIR) analytical techniques were used to determine the radial homogeneity in all boules and the deflection of the solid-liquid interface (SLI) in two boules that were rapidly quenched after 5 to 6 cm of directional solidification. For all growth runs, the measured radial coinpositional variations were on the order of 0.01 molar percent MnTe in the steady state region of growth. Comparison of the measured radial compositional results of the crystals to predicted values in the diffusion-limited regime indicate a strong influence of convection near the solid-liquid interface. This conclusion is supported by the weak influence of the translation rates and axial thermal gradients utilized in this study upon radial compositional homogeneity.

Price, M. W.↗
NASA NTRS2003

One-liter Hg ion clock for space and ground applications

We describe the development of a small Hg ion clock suitable for space use. A small clock occupying 1-2 liters volume and producing stability of 10 to the power negative twelve, divided by square root pi would significantly advance the state of space-qualified atomic clocks. Based on recent measurements, this technology should produce long-term stability as good as 10 to the power negative fifteen.

ion clock↗