SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Ge is beta Sn structured and crystallizes in the orthorhombic Imma space group. The structure is three-dimensional. Ge is bonded in a 8-coordinate geometry to eight equivalent Ge atoms. There are a spread of Ge–Ge bond distances ranging from 2.68–3.08 Å.
Abstract Searching for a connection between the two‐electron redox behavior of Group‐14 elements and their possible use as platforms for the photoreductive elimination of chlorine, we have studied the photochemistry of [( o ‐(Ph 2 P)C 6 H 4 ) 2 Ge IV Cl 2 ]Pt II Cl 2 and [( o ‐(Ph 2 P)C 6 H 4 ) 2 ClGe III ]Pt III Cl 3 , two newly isolated isomeric complexes. These studies show that, in the presence of a chlorine trap, both isomers convert cleanly into the platinum germyl complex [( o ‐(Ph 2 P)C 6 H 4 ) 2 ClGe III ]Pt I Cl with quantum yields of 1.7 % and 3.2 % for the Ge IV –Pt II and Ge III –Pt III isomers, respectively. Conversion of the Ge IV –Pt II isomer into the platinum germyl complex is a rare example of a light‐induced transition‐metal/main‐group‐element bond‐forming process. Finally, transient‐absorption‐spectroscopy studies carried out on the Ge III –Pt III isomer point to a ligand arene–Cl . charge‐transfer complex as an intermediate.
Searching for a connection between the two-electron redox behavior of Group-14 elements and their possible use as platforms for the photoreductive elimination of chlorine, we have studied the photochemistry of [(o-(Ph 2 P)C 6 H 4 ) 2 Ge IV Cl 2 ]Pt II Cl 2 and [(o-(Ph 2 P)C 6 H 4 ) 2 ClGe III ]Pt III Cl 3 , two newly isolated isomeric complexes. These studies show that, in the presence of a chlorine trap, both isomers convert cleanly into the platinum germyl complex [(o-(Ph 2 P)C 6 H 4 ) 2 ClGe III ]Pt I Cl with quantum yields of 1.7 % and 3.2 % for the Ge IV –Pt II and Ge III –Pt III isomers, respectively. Conversion of the Ge IV –Pt II isomer into the platinum germyl complex is a rare example of a light-induced transition-metal/main-group-element bond-forming process. Additionally, transient-absorption-spectroscopy studies carried out on the Ge III –Pt III isomer point to a ligand arene–Cl. charge-transfer complex as an intermediate.
The synthesis of graphene nanoribbons (GNRs) can be realized via CH4 chemical vapor deposition (CVD) on substrates such as Ge(001) that promote highly anisotropic growth kinetics. Small polycyclic aromatic hydrocarbons (PAHs) are first sublimed onto Ge near room temperature to form graphene-like seeds that subsequently initiate GNR growth with CH4 exposure at 1173 K. The behaviors of PAHs in the time in between their sublimation onto Ge and GNR growth are unclear. Here, we study an archetypical PAH, perylene-3,4,9,10-tetracarboxyl acid dianhydride (PTCDA), on Ge(001) using both scanning tunneling microscopy (STM) and density functional theory (DFT) to characterize PAH conformation, surface diffusivity, and clustering, versus temperature. PTCDA becomes mobile above 673 K (consistent with a DFT calculated diffusion barrier of 2.01 eV). The mobile PTCDA molecules meet, cluster, and fuse at Ge step edges. These clusters have an apparent height of 0.4 nm, similar to small graphene islands, and grow laterally with increasing temperature – reaching 1.2 – 2.1 nm in width at 1173 K, consistent with the seed size extrapolated from CVD experiments. These results provide a plausible picture for how PTCDA forms seeds for anisotropic GNR CVD and show that PAHs with reduced surface diffusivity and inter-molecular reactivity are needed to enable more monodisperse PAH-seeded GNR synthesis.
We investigated the process of Sn incorporation and surface segregation for compositionally graded Ge 1–x Sn x epilayers grown on high-quality Ge (001) substrates. Here, the growth resulted in pseudomorphic GeSn layers with a ~6% maximal Sn fraction at a constant substrate temperature. The maximal fraction of Sn was increased to 9.0% when the growth temperature was continuously lowered while increasing the Sn flux. The analysis of surface droplets and SIMS profiles of elemental composition give evidence of Sn rejection during the growth, potentially associated with a critical energy of elastic strain. The intentional reduction of the coherent strain by decreasing the Sn flux near the sample surface has been shown to trap a higher fraction of Sn in the Ge 1–x Sn x layer and lower surface segregation. Our results demonstrate that strain relief by misfit dislocations in the compositionally graded layer is inhibited, which leads to Sn segregation. Specifically, the compressive strain in the graded Ge 1–x Sn x epilayer is effectively “zero” near the interface with the Ge substrate and increases up to about –1.5 × 10 –2 near the surface. Thus, although the nucleation of a dislocation may reduce the compressive strain for the top region of the epilayer, it is not beneficial for the bottom region.
The synthesis and characterization of Ce 4 Fe 3 Ge 10 , n =3 member of the homologous series Ln n+1 M n X 3n+1 (Ln = lanthanides, M = transition metal, X = tetrel), is reported. The structure can be modelled with the Cmcm space group adopting the Eu 2 Ni 2-x Sn 5 structure type, with lattice parameters of a = 4.3323 (15) Å, b = 35.507 (9) Å, and c = 4.3069 (12) Å. Members of the series for n > 2 consist of stacking of ordered (CeNiSi 2 type) and disordered (BaNiSn 3 / AuCu 3 type) subunits with the acting as a “spacer” between CeNiSi 2 subunits. Although neither CeFeGe 3 nor CeFe 0.63 Ge 2 order magnetically down to 2 K, Ce 4 Fe 3 Ge 10 is an antiferromagnet below 3.6 K. To rationalize the emergent magnetism: (i) we established the Kondo and RKKY interaction dominant regions for the Ce analogues adopting the BaNiSn 3 and CeNiSi 2 by creating an electronic landscape for each, (ii) mapped the strained subunits, due to stacking, within the series. Here, we established the CeFeGe 3 subunit within Ce 4 Fe 3 Ge 10 contracts and is located within the Kondo-interaction dominant region, while the CeFe 0.63 Ge 2 subunit expands and is in the RKKY-interaction dominant region.
The recent discoveries of strikingly large zero-field Hall and Nernst effects in antiferromagnets Mn 3 X(X = Sn, Ge) have brought the study of magnetic topological states to the forefront of condensed matter research and technological innovation. These effects are considered fingerprints of Weyl nodes residing near the Fermi energy, promoting Mn 3 X(X = Sn, Ge) as a fascinating platform to explore the elusive magnetic Weyl fermions. In this review, we provide recent updates on the insights drawn from experimental and theoretical studies of Mn 3 X(X = Sn, Ge) by combining previous reports with our new, comprehensive set of transport measurements of high-quality Mn 3 Sn and Mn 3 Ge single crystals. In particular, we report magnetotransport signatures specific to chiral anomalies in Mn 3 Ge and planar Hall effect in Mn 3 Sn, which have not yet been found in earlier studies. The results summarized here indicate the essential role of magnetic Weyl fermions in producing the large transverse responses in the absence of magnetization.
Phase-change materials such as Ge–Sb–Te compounds have attracted much attention due to their potential value in electrical data storage. In contrast to the amorphous and crystalline phases, supercooled liquids are far from being deeply understood despite their inevitable role in both amorphization and crystallization processes. To this end, we have studied the dynamics properties and structural characteristics of liquid and supercooled liquid Ge 3 Sb 2 Te 6 during the fast cooling process. As the temperature decreases, chemical bonds become more homogeneous, but coordination numbers of Ge, Sb and Te atoms change very little. Meanwhile, the structural order of short-range configuration is obviously enhanced. Further studies suggest that Ge-centered, Sb-centered and Te-centered configurations change to the more ordered defective octahedrons mainly by adjusting the bond-angle relationship and bond length, rather than just by changing the coordination environment. It is the more ordered octahedrons that promote the formation of medium-range order. Our findings provide a deep insight into the origin of local structural order in supercooled liquid Ge 3 Sb 2 Te 6 , which is of great importance for the comprehensive understanding of amorphization and crystallization processes.
Ge 2 Sb 2 Te 5 is used in phase change memory, a nonvolatile memory technology, due to its phase change properties. The primary advantage of phase change memory over the state-of-the-art (flash memory) is its simple and small device geometry, which allows for denser nodes and lower power consumption. In phase change memory, resistive heating induces fast switching between the high resistance amorphous and low resistance crystalline phases, corresponding to storage of low and high digital states, respectively. However, the instability of the amorphous phase of Ge 2 Sb 2 Te 5 presents issues with processing and long-term data storage; such issues can be resolved by C doping, which stabilizes the amorphous phase and raises the crystallization temperature. To better understand the local structural effects of C doping on Ge 2 Sb 2 Te 5 , in situ Ge K-edge X-ray absorption spectroscopy measurements were taken during heating of films with various C doping concentrations. Here, the range of structural transformation temperatures derived from X-ray absorption near-edge structure analysis across the C doping series proved narrower than crystallization temperatures reported in similar in situ X-ray diffraction experiments, which may reflect changes in local structure that precede long-range ordering during crystallization. In addition, rigorous extended X-ray absorption fine structure fitting across and between temperature series revealed effects of C doping on the rigidity of Ge–Te bonds at low (2 at% and 4 at%) C concentrations.
The unit-cell parameters, systematic absences, and atomic parameters of the germanium allotrope oP32-Ge show continuous changes up to 6 GPa as shown by single-crystal diffraction analysis. Peak shape and diffuse scattering features remain about unchanged throughout the experiment. Hence, neither the average nor the defect structure behavior offers a structure-property explanation for pressure-induced superconductivity observed at about 2 GPa [1]. Angle dispersive x-ray diffraction reveals a sluggish transformation of oP32-Ge to the Ge-II polymorph, the transition begins around 8 GPa and is complete at 12 GPa, a behavior similar to that of Ge-I. The reconstructive transition was associated with the breakdown of crystals into a powder that was compressed to 32 GPa. Synchrotron infrared absorption measurements up to 8.5 GPa indicate an increase of the band gap of the oP32-Ge prior to its collapse at 8.5 GPa. We suggest that the onset of superconductivity is not associated with a major structural change or that such a change occurs in specific stress and temperature conditions.
Normal-incidence 1-keV Ar + ion bombardment leads to amorphization and ultrasmoothing of Ge at room temperature, but at elevated temperatures the Ge surface remains crystalline and is unstable to the formation of self-organized nanoscale patterns of ordered pyramid-shaped pits. The physical phenomenon distinguishing the high-temperature patterning from room-temperature ultrasmoothing is believed to be a surface instability due to the Ehrlich-Schwoebel barrier for diffusing vacancies and adatoms, which is not present on the amorphous material. This real-time grazing-incidence small-angle x-ray scattering study compares smoothing of a prepatterned Ge sample at room temperature with patterning of an initially flat Ge sample at an elevated temperature. In both experiments, when the nanoscale structures are relatively small in height, the average kinetics can be explained by a linear theory. Furthermore, the linear theory coefficients, indicating surface stability or instability, were extracted for both experiments. A comparison between the two measurements allows estimation of the contribution of the Ehrlich-Schwoebel barrier to the self-organized formation of ordered nanoscale patterns on crystalline Ge surfaces.
In the search for high-performance thermoelectrics, materials such as clathrates have drawn attention due to having both glasslike low phonon thermal conductivity and crystal-like high electrical conductivity. Ba 8 Ga 16 Ge 30 (BGG) has a loosely bound guest Ba atom trapped inside rigid Ga-Ge cage structures. Avoided crossings between acoustic phonons and the flat guest atom branches have been proposed to be the source of the low lattice thermal conductivity of BGG. Ga-Ge site disorder with Ga and Ge exchanging places in different unit cells has also been reported. We used time-of-flight neutron scattering to measure the complete phonon spectrum in a large single crystal of BGG and compared these results with predictions of density functional theory to elucidate the effect of the disorder on heat-carrying phonons. Experimental results agreed much better with the calculation assuming the disorder than with the calculation assuming the ordered configuration. Although the atomic masses of Ga and Ge are nearly identical, we found that disorder strongly reduces phonon group velocities, which significantly reduces thermal conductivity. Finally, our work points to a path towards optimizing thermoelectrics.
La 5 Co 2 Ge 3 is an itinerant ferromagnet with a Curie temperature T C of ~3.8K and a remarkably small saturated moment of 0.1µ B /Co. Here we present the growth and characterization of single crystals of the La 5 (Co 1–x Ni x ) 2 Ge 3 series for 0.00 ≤ x ≤ 0.186. Here we measured powder x-ray diffraction, composition as well as anisotropic temperature-dependent resistivity, temperature and field-dependent magnetization along with heat capacity on these single crystals. We also measured muon-spin rotation/relaxation (μSR) for some Ni substitutions (x = 0.027,0.036,0.074) to study the evolution of internal field with Ni substitution. Using the measured data we infer a low temperature, transition temperature-composition phase diagram for La 5 (Co 1–x Ni x ) 2 Ge 3 . We find that T C is suppressed for low dopings, x ≤ 0.014; whereas for 0.036 ≤ x ≤ 0.186, the samples are antiferromagnetic with a Néel temperature T N that goes through a weak and shallow maximum (T N ~ 3.4K for x~0.07) and then gradually decreases to 2.4 K by x = 0.186. For intermediate Ni substitutions, 0.016 ≤ x ≤ 0.027, two transition temperatures are inferred with T N >T C . Whereas the T–x phase diagram for La 5 (Co 1–x Ni x ) 2 Ge 3 and the T–p phase diagram determined for the parent La 5 Co 2 Ge 3 under hydrostatic pressure are grossly similar, changing from a low-doping or low-pressure ferromagnetic (FM) ground state to a high-doped or high-pressure antiferromagnetic (AFM) state, perturbation by Ni substitution enabled us to identify an intermediate doping regime where both FM and AFM transitions occur.
Mesoporous Ge was generated by bipolar electrochemical etching of (100) Ge. Through high-temperature annealing experiments, we found that the mesoporous Ge microstructure produces pore coalescence deep in the structure rather than at the surface. III-V epitaxy on annealed porous Ge with subsurface coalescence and coral-like structures on the surface produced shunted photovoltaic devices. The roughness of the annealed porous Ge film was reduced by a pre-annealing HBr treatment and a post-annealing ultrasonic DI water dip. A smoother reformed surface was obtained, on which a GaInAs upright device with an efficiency of 5.7% was grown, demonstrating a first step towards technical viability.
The yields of $K^0_S$ mesons have been measured in inelastic p+p interactions at incident projectile momenta of 31, 40 and 80 $\text {Ge}\hspace{-1.00006pt}\text {V}\!/\!c$ ($\sqrt{s_{NN}}=7.7, 8.8$ and 12.3 $\text {Ge}\hspace{-1.00006pt}\text {V}$, respectively). The data were recorded by the NA61$/$SHINE spectrometer at the CERN Super Proton Synchrotron and the $K^0_S$ mesons identified via their decays into $\pi ^{+} \pi ^{-}$ pairs. Double-differential distributions are presented as function of transverse momentum and rapidity. The mean multiplicities of $K^0_S$ mesons were determined to be $(5.95 \pm 0.19 (stat) \pm 0.30 (sys)) \times 10^{-2}$ at 31 $\text {Ge}\hspace{-1.00006pt}\text {V}\!/\!c$, $(7.61 \pm 0.13 (stat) \pm 0.43 (sys)) \times 10^{-2}$ at 40 $\text {Ge}\hspace{-1.00006pt}\text {V}\!/\!c$ and $(11.58 \pm 0.12 (stat) \pm 0.55 (sys)) \times 10^{-2}$ at 80 $\text {Ge}\hspace{-1.00006pt}\text {V}\!/\!c$. The results on $K^{0}_{S}$ production are compared with the production of charged kaons in corresponding reactions and with model calculations (Epos1.99, SMASH 2.0 and PHSD) as well as with published data from other experiments.
By changing nitrogen chemical potential during synthesis of Mn–Ge–N ternary nitrides, both wurtzite MnGeN 2 and antiperovskite Mn 3 GeN ternary phases are prepared. Antiperovskite films are optically opaque and conductive, while wurtzite films with Mn/(Mn + Ge) ≤ 0.5 transmit light above ~ 2 eV. Alloys of Mn 3 GeN with Si and Al are also investigated. Mn 3 (Ge 1−x Al x )N alloys with 0.07 ≤ x ≤ 0.16 exhibit a cubic (rather than tetragonal) structure. Mn 3 (Ge 1−x Si x )N with x ≤ 0.05 maintains the tetragonal structure but becomes cubic when x > 0.05. This study shows that care must be taken in the synthesis of Mn–Ge–N and similar nitrides, especially when materials are integrated into devices not amenable to structural and chemical probing.
The thirty-two meter drop tube at the Marshall Space Flight Center was used to study the effect of zero gravity containerless processing on the structure and properties of materials. The concept involves the suppression of heterogeneous nucleation of solid in liquid and, therefore, solidification accompanied by large degrees of undercooling. Under these conditions metastable phases can be formed or, at the very least, unique nonequilibrium microstructures (containing equilibrium phases) with unique properties can be produced. The drop tube solidification was applied to niobium base alloys with emphasis on the Nb-Ge binary system in an effort to produce metastable phases with high superconducting transition temperatures in bulk specimens. In the past, only lower Ge alloys (Nb-13 a/o, Nb-18 a/o, and Nb-22 a/o) could be undercooled. Higher Ge alloys (e.g., Nb-25 a/o Ge and Nb-27 a/o Ge) can now be undercooled on a routine basis.
The feasibility of a novel p(+)-Si(1-x)Ge(x)-p-Si heterojunction internal photoemission (HIP) IR detector is demonstrated. A degenerately doped p(x)-Si(1-x)Ge(x) layer is required for strong IR absorption to generate photoexcited holes. The Si(1-x)Ge(x) layers are grown by molecular beam epitaxy, with boron concentrations up to 10 to the 20th/cu cm achieved by using an HBO2 source. Photoresponse at wavelengths ranging from 2 to 10 microns has been obtained with quantum efficiencies above 1 percent. The tailorable cutoff wavelength of the HIP detector has been demonstrated by varying the Ge composition ratio in the Si(1-x)Ge(x) layers.