SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Electrical characteristics of Hughes Liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature.
Electrical characteristics of liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature. The solar cells were exposed to 1 MeV electron fluences of, respectively, 0, one hundred trillion, one quadrillion, and ten quadrillion e/sq cm.
Conversion efficiency of GaAs solar cell at various light intensities
The preparation of GaAs epitaxial layers by a vapor transport process using AsCl3, Ga and H2 was pursued to provide epitaxial wafers suitable for the fabrication of transferred electron oscillators and amplifiers operating in the subcritical region. Both n-n(+) structures, and n(++)-n-n(+) sandwich structures were grown using n(+) (Si-doped) GaAs substrates. Process variables such as the input AsCl3 concentration, gallium temperature, and substrate temperature and temperature gradient and their effects on properties are presented and discussed.
A new method for fabricating photocells, or solar cells, substitutes copper iodide for zinc diffusion. This produces a p-type surface layer and a photovoltaic junction.
Two port traveling wave microwave amplifier using subcritically doped GaAs samples several space charge wavelengths long
Crucible arrangements for two source vacuum evaporation of thin GaAs films of uniform thickness
Explore the source record for details and available documents.
Current oscillations in semiinsulating O and Cr doped GaAs samples at room temperature, noting photoconductivity excitation spectra
Alloying pairs of metal pellets to n and p type semiinsulating GaAs, discussing photo effects
Melting points of GaP-metal systems and growth of GaP by vertical liquid epitaxy
Carrier concentration profiles and surface resistance of Ohmic contacts to solution epitaxial n-type GaAs wafers measured by Schottky barrier capacitance
N type GaAs doped with Si, conductivity anisotropy observed from measurement and explanation in terms of electron distribution
GaAs single crystals real surface electrical characteristics, using pulsed field effect techniques
Techniques were developed for creating bipolar microwave transistors in GaAs by ion implantation doping. The electrical properties of doped layers produced by the implantation of the light ions Be, Mg, and S were studied. Be, Mg, and S are suitable for forming the relatively deep base-collector junction at low ion energies. The electrical characteristics of ion-implanted diodes of both the mesa and planar types were determined. Some n-p-n planar transistor structures were fabricated by implantation of Mg to form the base regions and Si to form the emitters. These devices were found to have reasonably good base-collector and emitter-base junctions, but the current gain beta was small. The low was attributable to radiative recombination in the base region, which was extremely wide.
In the process of ion implantation, ion beams bombard the surface and create undesirable surface effects. The surface effects were investigated, and surface leakage currents were shown to be reduced by surface treatment. I-V characteristics and C-V measurements were obtained for the Zn-GaAs and Zn-(In,Ga)As junction is considered as a p-i-n heterojunction, without generation-recombination current. The Zn-GaAs junction is considered as a p-n homojunction with appreciable generation-recombination currents.
Optical absorption in an electric field has been of increased interest in recent years since Callaway predicted that the Wannier levels may be observable in direct-transition semiconductors such as GaAs. In this work, such levels have been observed for the first time and found to be in substantial agreement with the Callaway theory.
Explore the source record for details and available documents.