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Stable vicinal step orientations in m- plane GaN
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Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2
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Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotr
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KOH based selective wet chemical etching of AlN, Al{sub x}Ga{sub 1−x}N, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
A controllable and smooth potassium hydroxide-based wet etching technique was developed for the AlGaN system. High selectivity between AlN and Al{sub x}Ga{sub 1−x}N (up to 12×) was found to be critical in achieving effective substrate thinning or removal for AlGaN-based deep ultraviolet light emitting diodes, thus increasing light extraction efficiency. The mechanism of high selectivity of AlGaN as a function of Al composition can be explained as related to the formation and dissolution of oxide/hydroxide on top of N-polar surface. Cross-sectional transmission electron microscopic analysis served as ultimate proof that these hillocks were not related to underlying threading dislocations.
High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination
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Detection of hot electrons originating from an upper valley at ∼1.7eV above the Γ valley in wurtzite GaN using electron emission spectroscopy
Using electron emission spectroscopy, measurement and analysis were conducted on the energy distribution of vacuum emitted electrons from electrically driven InGaN/GaN green (peak wavelengths 𝜆 ≈ 515nm) light-emitting diodes (LEDs) with and without a prewell superlattice (SL). Here, we report on the detection of a high-energy upper valley at ∼ 1.7eV above the Γ valley from samples with no prewell SL. We propose that these upper valley electrons originate predominantly from trap-assisted Auger recombination (TAAR) in green LEDs, as the intensity of these peaks is found to have quadratic dependence on the carrier density 𝑛 [see Espenlaub et al., J. Appl. Phys. 126, 184502 (2019)]. The high-energy upper valley peak was not observed in the sample with a prewell SL which is attributed to gettering by the prewell SL of still unidentified impurities that act as TAAR centers.
Absolute surface energies of polar and nonpolar planes of GaN
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Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes
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Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings
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High-Voltage Vertical GaN p-n Diodes by Epitaxial Liftoff From Bulk GaN Substrates
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Design Optimization of GaN Vertical Power Diodes and Comparison to Si and SiC.
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High Power-Density Photovoltaic Boost Converter and Inverter Using GaN and AlGaN Devices Housed in 3D Printed Packages.
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