SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
NREL will aid Smartville, Inc. to rapidly characterize electric vehicle (EV) battery state-of-health (SOH), characterize lifetime models, and forecast lifetime under various second-use reconditioning strategies.
The nanoscale interpenetrating electron donor–acceptor network in organic bulk heterojunction (BHJ) solar cells results in efficient charge photogeneration but creates complex 3D pathways for charge transport. At present, little is known about the extent to which out-of-plane charge flow relies on lateral electrical connectivity. In this work, a procedure, based on conductive atomic force microscopy, is introduced to quantify lateral current spreading during out-of-plane charge transport. Using the developed approach, the dependence of lateral spreading on BHJ phase separation, composition, and molecule type (small molecule vs polymer) is studied. In the small-molecule BHJ, 7,7'-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b']dithiophene-2,6-diyl)bis(6-fluoro-4-(5'-hexyl-[2,2'-bithiophen]-5-yl)benzo[c]-[1,2,5]thiadiazole):(6,6)-Phenyl-C 71 -butyric acid methyl ester (p-DTS(FBTTh 2 ) 2 :PC 71 BM), an increase is observed in lateral hole current spreading as the population of donor crystallites, bearing an edge-on molecular orientation, is increased. When integrated into BHJs, the polymer donor poly(3-hexylthiophene-2,5-diyl) (P3HT) leads to greater lateral hole current spreading and more spatially uniform charge transport than the small-molecule donor, owing to in-plane charge transport along the polymer backbone. Finally, through the newly introduced electrical characterization scheme, these experiments bring to light the role of lateral electrical connectivity in assisting charge navigation across BHJs.
State-of-the-art monocrystalline Si (c-Si) solar cells require passivating contacts to achieve a high degree of charge-carrier separation and collection. In this work, we focus on boron-doped polycrystalline Si on locally etched silicon nitride/silicon oxide (PLENO) passivating contacts. In PLENO contacts, excellent surface passivation is provided by the ~10 nm dielectric bilayer, while pinholes in the dielectric bilayer, that are filled with doped polycrystalline Si, provide charge-carrier selectivity and transport. During PLENO fabrication, etch undercut in the dielectric bilayer occurs. Here, using electrical characterization and microscopies, we show that undercut causes pinholes to be electrically resistive in PLENO. A processing sequence that eliminates the undercut in the final PLENO structure results in electrically conductive pinholes with low contact resistivity.
Understanding mechanisms influencing electrical transport in material systems not only provides a scientific explanation for observed behavior but also offers insight into ways to enhance transport in devices. This study reports experimental hole mobility of 8 x 10 4 cm 2 V -1 s -1 in a Ge 0.92 Sn 0.08 , the highest recorded mobility for the GeSn system. A study of the material's quality is presented using structural and electrical characterization techniques, with transport data being supported by simulations using an extensive modeling framework. Quantum Hall measurements further indicate the material's high quality and potential spintronic applications, with extracted values of 0.0689$m$ 0 and 13.6 for the effective mass and effective g‐factor, respectively. It is observed that transport is limited by alloy disorder scattering at cryogenic temperatures. A comparative study between the presented structure and similar quantum well heterostructures revealed that the difference in hole mobilities is captured by a disparity in the reduced nominal alloy disorder scattering potential (Δ U alloy = 0.8 eV), that is lower than the value of a fully random alloy (Δ U alloy = 1.4–1.7 eV) potential. The difference in Δ U alloy suggests that heterostructures with similar geometries and alloy compositions can have different alloy disorder scattering, implying that an underlying mechanism, such as short‐range order, may be responsible and warrants further investigation.
Electrical characterization of defects induced in FZ and CZ silicon stress in four-point bending above 1200 C was started. Techniques to study electrical activity that will permit correlation of defect activity with diffusion length and with room and low temperature EBIC are being developed. Preliminary characterization of defects in ribbon grown at very low speeds of less than 1 cm/min shows that the dislocation density is very low over significant regions of cross section, while regions of high dislocation density (approx. 5 x 10(6)/cm(2)) occur in bands in a number of places. Addition measurements of stress distributions in EFG material were obtained at the University of Illinois using shadow-Moire interferometry.
The defect density present at the dielectric-semiconductor interface in an MOS structure directly influences the channel carrier characteristics in semiconductor devices, especially in wide bandgap material systems used in power devices. While these trap defects are typically quantified through electrical characterization of MOS-capacitor test structures, this treatment offers very little insight into the physical nature of interface defects. Such shortcomings demand a physical characterization strategy to guide fabrication optimization. X-ray photoelectron spectroscopy (XPS) is suggested as a viable technique to determine chemical data for dielectric interfaces formed using atomic layer deposition (ALD) on GaN substrates. Previously, 1-D XPS characterization has confirmed the presence of a Ga x O y interlayer between ALD dielectrics and the GaN substrate. In this work, XPS data is serially collected to form 2-D images of an ALD-Al 2 O 3 /GaN interface as a proof-of-concept experiment for in-situ XPS quality monitoring during ALD processing. The information provided by this work reveals some of the challenges for incorporating XPS characterization as an in-situ strategy during fabrication of GaN-based devices. Separately, electrical mapping of a 2-D array of ALD-Al 2 O 3 /GaN MOS-capacitor devices provide a means to quantify the spatial variations in interface quality across a single wafer. Physical characterization techniques, such as time-of-flight secondary ion mass spectroscopy, provide additional chemical information about the Al 2 O 3 /Ga x O y /GaN structure that complement the electrical mapping results. This analysis shows that a higher Ga x O y content correlates with higher interface state defects for trap energies deep in the band gap.
Gallium nitride (GaN), a wide bandgap semiconductor, has vast potential to address two environment conditions associated with the application of electronics to nuclear power: elevated temperatures, and high levels of radiation. A process was developed at The Ohio State University (OSU) to enable fabrication of complex digital and analog electronics circuits for application to nuclear power environments such as locations near or in the reactor core or in spent nuclear fuel casks. Radio frequency (RF)-grade GaN high electron mobility transistor (HEMT) devices were fabricated as part of this process. These were fabricated as depletion mode and enhancement mode devices. They have been electrically characterized and have demonstrated the expected performance. Behavioral models (Verilog-A) were developed from these device measurements to enable electrical simulation of GaN HEMT devices and circuits using common electronics simulation tools based on Simulation Program with Integrated Circuit Emphasis (SPICE). A similar set of GaN HEMT devices is being developed to provide lower speed devices for logic and analog functions. These accomplishments position this technology for effective application to sensor interfacing, signal processing, and data communications in nuclear power plants, including operation in or near the reactor core.
Rapid progress has been achieved in perovskite solar cells (PSCs), and their efficiencies have improved from 3.8 % to 24.2 % in less than a decade. With low-cost processing, PSCs have shown exciting photovoltaic (PV) properties, such as effective optical absorption, a long carrier lifetime, and unique defect tolerance. While recent studies demonstrated improved stability up to 100 days, PSC technology is still challenged to meet the stringent industry requirements for commercialization. Despite considerable efforts, the underlying physical mechanisms for the inferior stability of PSCs are not well understood. One reason for this divergence is that many established measurement techniques (e.g., quantum efficiency, photoluminescence) probe the properties on length scales far greater than that of electronic and/or structural inhomogeneity (i.e., < 1 μm near grain boundaries) and therefore characterize convoluted and/or averaged properties. Ion/electron beam-based techniques have been extensively used to access the microstructures of PSCs, enabling atomic/nanoscale structural, chemical, optical, and electrical characterizations. For example, focused ion beam (FIB) milling produces an atomically smooth surface that minimizes the artifacts attributed to the surface roughness. FIB techniques can also create a well-defined cross-section of PSCs without mechanical damage in a physical cleaving sample preparation. While powerful, there are some concerns about possible beam damage of inorganic-organic perovskites via chemical-bond breakage and local heating. This project aims to comprehensively understand how the microstructural/interfacial properties of PSCs (e.g., Methylammonium Lead Iodide [MAPbI 3 ]) are modified under the irradiating ion beams. Specifically, we investigate the sub-surface properties of PSCs before and after Ar-ion beam injections. Kelvin probe force microscopy (KPFM) measures the contact potential differences (CPDs). Photoluminescence (PL) microscopy in conjunction with Finite-Difference Time-Domain (FDTD) simulations infers the formation of a “dead layer” (< 15 nm) on the subsurface of MAPbI 3 during Ar+ milling processes while preserving the initial bulk properties. The x-ray photoemission spectroscopy (XPS) confirms this modified surface is a lead-rich and iodine-deficient surface. We initiate customizing in-situ measurement setup while measuring the local optical and electrical properties of PSC under thermal (cooling, heating) and light stressors. Our results provide in-depth knowledge of the ion-beam impact on metal-halide perovskites and how this modified sub-surface impacts their properties under accelerated stressors of light and heat. Intensive Monte Carlo simulations of an electron beam interacting with PSCs provide the beam energy distribution in PSCs, proposing possible measurement conditions of using e-beam with minimizing beam damage. Our in-situ measurement platform can accommodate the diverse architecture of PSC devices for studying deterioration mechanisms under mixed environmental stressors.
Electrical characterization and qualification tests were performed on the RCA MWS5001D, 1024 by 1-bit, CMOS, random access memory. Characterization tests were performed on five devices. The tests included functional tests, AC parametric worst case pattern selection test, determination of worst-case transition for setup and hold times and a series of schmoo plots. The qualification tests were performed on 32 devices and included a 2000 hour burn in with electrical tests performed at 0 hours and after 168, 1000, and 2000 hours of burn in. The tests performed included functional tests and AC and DC parametric tests. All of the tests in the characterization phase, with the exception of the worst-case transition test, were performed at ambient temperatures of 25, -55 and 125 C. The worst-case transition test was performed at 25 C. The preburn in electrical tests were performed at 25, -55, and 125 C. All burn in endpoint tests were performed at 25, -40, -55, 85, and 125 C.
A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.
A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated.
We reported the growth of (AlGa) 2 O 3 layers on ($10\overline{10}$) α-Al 2 O 3 substrates using cold-wall metalorganic chemical vapor deposition, and the electrical characterization of Si-doped (AlGa) 2 O 3 layers. In the Ga 2 O 3 growth, the α phase was dominant at low growth temperature, achieving the growth rate of 2.4 μm h –1 at 650 °C. Sheet resistance and electrical conductivity of the Ga 2 O 3 layers with a Si concentration of 3 × 10 20 cm –3 were 1 × 10 4 Ω/square and 8.3 S cm –1 , respectively, at the measurement temperature of 500 °C. The Al composition in the (AlGa) 2 O 3 layers was controlled from 0% to 74%. In our initial attempts, we obtained electrically conductive α-(AlGa) 2 O 3 layers by Si doping (2 × 10 –9 S cm –1 in the sample with an Al composition of 56%). Finally, hybrid functional calculations suggest the conductivities are limited by compensation of Si through cation vacancy complexes, and not by the significant amounts of co-incorporated C and N that are predicted to be electrically passivated by hydrogen.
Sandia National Labs will provide Technical Assistance and consulting to Requester on a series of Requester’s test structures and devices to characterize and aid in the determination of optimal fabrication parameters via fabrication of functional test structures and cells. Working with previously established processes and test die modules, Sandia will construct a series of test chips with varying materials properties to allow the electrical characterization and component testing of Requester’s test structures and devices. Material variations will be selected for optimization of yield and desired target operation parameters. A deliverable in the form of a report will be written. Sandia intends to deliver testable die to the Requester.
Combinatorial magnetron sputtering and electrical characterization were used to systematically study the impact of compositional changes in the resistive switching of transition metal oxides, specifically the Zr x Ta 1−x O y system. Current-voltage behavior across a range of temperatures provided insights into the mechanisms that contribute to differences in the electrical conductivity of the pristine Ta 2 O 5 and ZrO 2 , and mixed Zr x Ta 1−x O y devices. The underlying conductive mechanism was found to be a mixture of charge trapping and ionic motion, where charge trapping/emission dictated the short-term cycling behavior while ion motion contributed to changes in the conduction with increased cycling number. ToF-SIMS was used to identify the origin of the “wake-up” behavior of the devices, revealing an ionic motion contribution. This understanding of how cation concentration affects conduction in mixed valence systems helps provide a foundation for a new approach toward manipulating resistive switching in these active layer materials.
Reliability and durability tests play a key role in the photovoltaic (PV) industry by minimizing potential failure risks for both existing and new cell and module technologies. In this work, a detailed study of contact degradation in monocrystalline and multicrystalline PV modules is performed. The modules are subjected to a sequence of damp heat (DH) exposures followed by electrical characterization after each step. Electroluminescence (EL) imaging shows different darkening patterns for monocrystalline modules compared to multicrystalline modules; the former shows darkening near the busbars and the latter shows it across virtually the entire cell surface. The primary loss mechanism is confirmed to be resistive after comparing the current-voltage (I–V) characteristics at each DH exposure step. Representative samples have been cored out from both the degraded modules and controls for materials characterization to gain further insights into the degradation mechanism. Top-down and cross-sectional scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and top-down high-resolution X-ray photoelectron spectroscopy (XPS) analysis performed on the cored samples confirm the degradation is due to metallization corrosion. Our study suggests that the difference in the darkening pattern can most likely be attributed to the different silver paste composition used for contacting each cell technology, particularly the composition of the glass frit.
Silicon (Si) anodes present a promising alternative to graphite anodes for lithium-ion batteries (LIBs), as Si has a greater specific capacity. However, one major constraint is the volumetric change of Si during lithiation that results in an unstable solid-electrolyte interphase (SEI), so Si-containing electrodes require the use of various strategies to mitigate these effects and improve performance. One such solution is the use of Si nanoparticles (NPs) that maximize the surface area to volume ratio. Here, we discuss electrodes made with Si NPs treated with polyethylene oxide (PEO) (for improving dispersion during processing), conductive carbon NPs, and P84 polyimide binder which shows significant impacts of annealing treatment on improvements of active material utilization, first cycle efficiency, and capacity retention with extensive cycling . We used air-free argon ion polishing to create electrode cross sections and imaged through the electrode thickness using atomic force microscopy (AFM)-based nano-electrical characterization of scanning spreading resistance microscopy (SSRM), nano-mechanical characterizations of contact resonance and force volume (CR-FV), and scanning electron microscopy-based energy dispersive x-ray spectroscopy (SEM-EDS). Results show that the Si and conductive carbon segregate into phases with a distinctive carbon-rich banded morphology that surrounds the Si-rich phase during annealing. In pristine electrodes, the carbon- and SEI-rich bands exhibit a higher electronic conductivity and a lower elastic modulus than the Si active material phase. These structures, as well as distinct electronic and mechanical properties, remain during cycling, suggesting an improvement of electrical conduction pathways and a mechanical strain buffer for active Si material expansion during cycling. This phase separation may be a major factor in the improvement seen in electrochemical performance due to annealing. Additionally, our nm-scale and multi-mode characterizations provide a novel route for understanding and improving energy storage devices, which is advantageous due to the highly inhomogeneous of composite electrodes in nm-mm scales.
The ferroelectric properties and structural phase transition behaviors of fluorite-type CeO 2 −HfO 2 −ZrO 2 films were investigated. The epitaxial films on indium tin oxide (ITO) (111)/yttria-stabilized zirconia (YSZ) (111) substrates were grown through pulsed laser deposition at room temperature and subsequently heat-treated at 1000 °C under a N 2 gas flow. The crystalline phases and Curie temperatures of the films were investigated by X-ray diffraction. An increase in the Ce or Zr content in the films led to a higher crystallographic symmetry, such as orthorhombic or tetragonal. In addition, electrical characterization revealed that the orthorhombic films and some of the tetragonal films displayed ferroelectricity. This was due to the field-induced phase transition from the tetragonal to ferroelectric orthorhombic phase in the films, where the Curie temperatures were relatively low. The tetragonal metastable phase was kinetically frozen and could not change into the stable orthorhombic phase at such a low temperature. The critical electric field where the field-induced phase transition occurred was below 0.8 MV/cm, which was sufficiently small compared to the coercive field. These results evidence the kinetic driving force that causes a field-induced phase transition from the paraelectric tetragonal phase to the ferroelectric orthorhombic phase in HfO 2 -based ferroelectrics. They also enhance our understanding of the thermodynamic phase stabilities of HfO 2 -based material polymorphs.
Recent advances in the growth of III-V semiconductor nanowires (NWs) hold great promise for nanoscale optoelectronic device applications. It is established that a small amount of nitrogen (N) incorporation in III-V semiconductor NWs can effectively red-shift their wavelength of operation and tailor their electronic properties for specific applications. Still, understanding the impact of N incorporation on non-equilibrium charge carrier dynamics and transport in semiconducting NWs is critical in achieving efficient semiconducting NW devices. In this work, ultrafast optical pump-terahertz probe spectroscopy has been used to study non-equilibrium carrier dynamics and transport in Te-doped GaAsSb and dilute nitride GaAsSbN NWs, with the goal of correlating these results with electrical characterization of their equilibrium photo-response under bias and low-frequency noise characteristics. Nitrogen incorporation in GaAsSb NWs led to a significant increase in the carrier scattering rate, resulting in a severe reduction in carrier mobility. Carrier recombination lifetimes of 33 ± 1 picoseconds (ps) and 147 ± 3 ps in GaAsSbN and GaAsSb NWs, respectively, were measured. The reduction in the carrier lifetime and photoinduced optical conductivities are due to the presence of N-induced defects, leading to deterioration in the electrical and optical characteristics of dilute nitride NWs relative to the non-nitride NWs. Finally, we observed a very fast rise time of ~2 ps for both NW materials, directly impacting their potential use as high-speed photodetectors.