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Results for “Electrical breakdown”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Non-premixed counterflow methane flames in DC/AC/NS electric fields

The response of counterflow diffusion flames to sub-breakdown DC and AC electric fields, as well as their superposition with ns pulse discharge waveforms, is studied in the plane-to-plane electrode geometry. Sub-breakdown DC and low-frequency AC electric fields cause the flame displacement toward the grounded electrode, in the direction of the applied field, indicating that the body force on the positive ions exceeds that on the electrons and negative ions. As the AC frequency increases, the flame response becomes less pronounced, due to the reduction of the electrohydrodynamic (EHD) body force impulse over the AC half-period. The electric field in the electrode gap is determined by ps Electric Field Induced Second Harmonic (E-FISH) generation, with absolute calibration using sub-breakdown ns pulses overlapped with the measured electric field waveform. The results show that the electric field distribution across the flame in the current saturation regime follows the Laplacian field. This indicates that the space charge density in the gap is too low to distort the applied DC or AC field, consistent with the kinetic modeling predictions. Combining a nanosecond pulse discharge with a sub-breakdown DC field generates a diffuse plasma across the entire gap. Time-resolved and spatially resolved measurements of the electric field in the discharge indicate the ionization wave propagation between the electrodes. The present results do not exhibit a detectable flame displacement enhancement by ns discharge pulses combined with a sub-breakdown field, observed previously. Kinetic modeling calculations show that the absence of this effect in the plane-to-plane geometry is due to the rapid plasma self-shielding. This indicates that alternative electrode geometries limiting the self-shielding would be more effective for the plasma / electric field enhanced flameholding and flame stabilization applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Understanding Electrical Conduction and Nanopore Formation During Controlled Breakdown

Controlled breakdown has recently emerged as a highly appealing technique to fabricate solid-state nanopores for a wide range of biosensing applications. This technique relies on applying an electric field of approximately 0.4–1 V nm –1 across the membrane to induce a current, and eventually, breakdown of the dielectric. Although previous studies have performed controlled breakdown under a range of different conditions, the mechanism of conduction and breakdown has not been fully explored. Here, electrical conduction and nanopore formation in SiN x membranes during controlled breakdown is studied. It is demonstrated that for Si-rich SiN x , oxidation reactions that occur at the membrane-electrolyte interface limit conduction across the dielectric. However, for stoichiometric Si 3 N 4 the effect of oxidation reactions becomes relatively small and conduction is predominately limited by charge transport across the dielectric. Several important implications resulting from understanding this process are provided which will aid in further developing controlled breakdown in the coming years, particularly for extending this technique to integrate nanopores with on-chip nanostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2020

EMP-Resilient Electric Grid Transformer Analysis

The response of a high - voltage (HV) transformer to fast rise time voltages, such as that from a electromagnetic pulse (EMP) can result in interruption of power distribution and possibly system failure. To help identify these potential occurrences, it is necessary to develop a transformer model that not only captures the input/output response of the transformer but also the internal behavior. The model constructed should cover the frequency band of interest while capturing the internal physical and electrical characteristics. This broad-band, high-fidelity model would enable the prediction of unwanted effects through simulation. A proposed modeling scheme for a HV transformer is described in Part 1 of this report. Part 2 of this report details assessments of internal voltage and electrical field holdoff testing of transformer insulation dielectric breakdown, including comparison of low frequency (DC/60 Hz) holdoff to rise times characteristic of lightning (1 s) and EMP E1 transients (10 - 30 ns). This initial project is a path toward establishing electrical grid transformer failure criteria for EMP voltage transients. We developed modeling methods and measured breakdown electrical field statistical distributions for direct current, 60 Hz, lightning and EMP characteristic voltage rise times. Methods of nanosecond-scale capacitive discharge unit high voltage source development, suggestions for derating of 60 Hz insulation maximum electrical fields for EMP nanosecond pulse voltage withstand rating, and potential methods for increasing transformer resilience to such fast rise time pulses are described.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Concurrent characterization of GaN MOSHEMT gate leakage via electrical and thermoreflectance measurements

In this work, we report the first concurrent use of electrical and thermal characterization, via thermoreflectance, to analyze Time Dependent Dielectric Breakdown in GaN MOSHEMTs. Electrically stressing the devices until a failure occurs, then evaluating them via thermoreflectance, revealed a geometric dependence of the failure mode. Further, all soft breakdowns occurred at the mesa edge where the electric field strength was at its strongest, and tunneling current density was at its highest. This breakdown phenomenon at the mesa edge has been seen previously in GaN HEMTs employing a mesa architecture. Possible approaches to mitigate these failures in MOSHEMTs are proposed.

42 ENGINEERING↗
DOE OSTI2020

Structural breakdown in high power GaN-on-GaN p-n diode devices stressed to failure

The morphology of GaN-on-GaN vertical p-i-n diode devices after reverse-bias electrical stressing to breakdown has been investigated. All failed devices had irreversible structural damage, showing large surface craters that were ∼15–35 μm deep with lengthy surface cracks. Cross-sectional electron micrographs of failed devices showed substantial concentrations of threading dislocations around the cracks and near the crater surfaces. Progressive ion-milling across damaged devices revealed high densities of threading dislocations and the presence of voids beneath the surface cracks; these features were not observed in any unstressed devices. These results should serve as a useful reference for future reliability studies of vertical high-power GaN devices.

Peri, Prudhvi (ORCID:000000022338441X)↗
DOE OSTI2020

Encapsulant Void Breakdown Voltage Modeling & Experiments

For high voltage electrical devices, prevention of high voltage breakdown is critical for device function. Use of polymeric encapsulation such as epoxies is common, but these may include air bubbles or other voids of varying size. The present work aimed to model and experimentally determine the size dependence of breakdown voltage for voids in an epoxy matrix, as a step toward establishing size criteria for void screening. Effects were investigated experimentally for both one-dimensional metal/epoxy/air/epoxy/metal gap sizes from 50 μm to 10 mm, as well as spherical voids of 250 μm, 500 μm, 1 mm and 2 mm sizes. These experimental results were compared to modified Paschen curve and particle-in-cell discharge models; minimum breakdown voltages of 6 - 8.5 kV appeared to be predicted by 1D models and experiments, with minimum breakdown voltage for void sizes of 0.2 - 1 mm. In a limited set of 3D experiments on 250 μm, 500 μm, 1 mm and 2 mm voids within epoxy, the minimum breakdown voltages observed were 18.5 - 20 kV, for 500 μm void sizes. These experiments and models are aimed at providing initial size and voltage criteria for tolerable void sizes and expected discharge voltages to support design of encapsulated high voltage components.

42 ENGINEERING↗
DOE OSTI2023

Partial discharge suppression in high voltage solid-state devices

Devices, methods and techniques are disclosed to suppress electrical discharge and breakdown in insulating or encapsulation material(s) applied to solid-state devices. In one example aspect, a multi-layer encapsulation film includes a first layer of a first dielectric material and a second layer of a second dielectric material. An interface between the first layer and the second layer is configured to include molecular bonds to prevent charge carriers from crossing between the first layer and the second layer. The multi-layer encapsulation configuration is structured to allow an electrical contact and a substrate of the solid-state device to be at least partially surrounded by the multi-layer encapsulation configuration.

Sampayan, Stephen↗
DOE OSTI2024

Partial discharge suppression in high voltage solid-state devices

Devices, methods and techniques are disclosed to suppress electrical discharge and breakdown in insulating or encapsulation material(s) applied to solid-state devices. In one example aspect, a multi-layer encapsulation film includes a first layer of a first dielectric material and a second layer of a second dielectric material. An interface between the first layer and the second layer is configured to include molecular bonds to prevent charge carriers from crossing between the first layer and the second layer. The multi-layer encapsulation configuration is structured to allow an electrical contact and a substrate of the solid-state device to be at least partially surrounded by the multi-layer encapsulation configuration.

Sampayan, Stephen↗
DOE OSTI2023

Direct Visualization of Charge Migration in Bilayer Tantalum Oxide Films by Multimodal Imaging

Inspired by biological neuromorphic computing, artificial neural networks based on crossbar arrays of bilayer tantalum oxide memristors have shown to be promising alternatives to conventional complementary metal-oxide-semiconductor (CMOS) architectures. In order to understand the driving mechanism in these oxide systems, tantalum oxide films are resistively switched by conductive atomic force microscopy (C-AFM), and subsequently imaged by kelvin probe force microscopy (KPFM) and spatially resolved time-of-flight secondary ion mass spectrometry (ToF-SIMS). These workflows enable induction and analysis of the resistive switching mechanism as well as control over the resistively switched region of the film. In this work it is shown that the resistive switching mechanism is driven by both current and electric field effects. Reversible oxygen motion is enabled by applying low (<1 V) electric fields, while high electric fields generate irreversible breakdown of the material (>1 V). Fully understanding oxygen motion and electrical effects in bilayer oxide memristor systems is a fundamental step toward the adoption of memristors as a neuromorphic computing technology.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Toward improved PVDF-BaTiO 3 composite dielectrics: mechanical activation of the filler versus filler content

Abstract Barium titanate (BT) perovskite particles were surface modified by means of mechanical treatment and used as inorganic component in polyvinylidene fluoride (PVDF) based composites. The changes in electrical properties of the composite films with increasing in filler content were followed by dielectric spectroscopy, breakdown strength andD-Emeasurements. A comparison of the properties of the composites prepared with untreated and mechanically activated particles revealed that there is a significant difference in their performances at low filler concentrations (<20 wt%). Introduction of the surface modified ceramic particles into PVDF matrix led to an increase of the dielectric constant without affecting significantly the electrical breakdown strength. In contrast, when as received BT particles were used a filler, both dielectric constants and breakdown strengths of the composite films were lower than the corresponding values observed for the pure PVDF. At higher concentrations, however, the influence of pre-treatment of the filler on the effective electrical properties becomes less significant. The obtained results were discussed in terms of the pronounced crystallization of polarβandγcrystal phases of PVDF in the presence of surface modified BT fillers, which is confirmed by Raman spectroscopy.

Physics↗
DOE OSTI2020

Achieving Flat-on Primary Crystals by Nanoconfined Crystallization in High-Temperature Polycarbonate/Poly(vinylidene fluoride) Multilayer Films and Its Effect on Dielectric Insulation

To meet the stringent requirements of next-generation film capacitors for power electronics, multilayer films (MLFs) are fabricated with the advantage of achieving high temperature rating, high energy density, and reasonably low loss simultaneously. In this study, a high permittivity polar polymer, poly(vinylidene fluoride) (PVDF), is multilayered with a linear, low loss dielectric polymer such as high-temperature polycarbonate (HTPC). However, the dielectric loss of these MLFs was still high as compared with current state-of-the-art biaxially oriented polypropylene (BOPP) films. The goal of this work is to decrease the dielectric loss and enhance dielectric insulation by achieving flat-on primary PVDF crystals in MLFs via nanoconfined melt-recrystallization. Based on simultaneous small- and wide-angle X-ray scattering experiments, edge-on lamellar crystals were observed for all as-extruded MLFs, regardless of different PVDF layer thicknesses. However, after melting at 180 °C followed by recrystallization, flat-on primary crystals were successfully achieved when the PVDF layer thickness was below 39 nm. Above 78 nm for the PVDF layer, major edge-on primary crystals with minor flat-on secondary crystals were observed. Furthermore, from leakage current, breakdown, lifetime, and electric displacement-electric field loop studies, MLFs with the flat-on primary crystals exhibited reduced loss and enhanced dielectric insulation as compared to as-extruded MLFs and those with edge-on primary/flat-on secondary crystals. This was attributed to the effective blockage of charge carriers by the flat-on PVDF primary crystals and their reduced ferroelectric switching.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Switching it up: New mechanisms revealed in wurtzite-type ferroelectrics

Wurtzite-type ferroelectrics have drawn increasing attention due to the promise of better performance and integration than traditional oxide ferroelectrics with semiconductors such as Si, SiC, and III-V compounds. However, wurtzite-type ferroelectrics generally require enormous electric fields, approaching breakdown, to reverse their polarization. The underlying switching mechanism(s), especially for multinary compounds and alloys, remains elusive. Here, we examine the switching behaviors in Al 1-x Sc x N alloys and wurtzite-type multinary candidate compounds we recently computationally identified. We find that switching in these tetrahedrally coordinated materials proceeds via a variety of nonpolar intermediate structures and that switching barriers are dominated by the more-electronegative cations. For Al 1-x Sc x N alloys, we find that the switching pathway changes from a collective mechanism to a lower-barrier mechanism enabled by inversion of individual tetrahedra with increased Sc composition. Our findings provide insights for future engineering and realization of wurtzite-type materials and open a door to understanding domain motion.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Unintended gas breakdowns in narrow gaps of advanced plasma sources for semiconductor fabrication industry

Occurrence of unintended gas breakdown in the narrow gaps of plasma processing chambers is one of the critical challenges in developing advanced plasma sources. Here, we present a combined experimental and theoretical study of unintended discharges in the narrow gaps of plasma processing chambers and report significant drop of the gas breakdown voltage in the presence of a background plasma facing the gap. Experimentally measured breakdown voltages decrease in subsequent breakdown events due to wall erosion caused by the discharge. Therefore, preventing and mitigating the first discharge is of paramount importance. An analysis of kinetic simulation results indicates that the charged particle influx from the background plasma in the processing chamber into the gap is responsible for the onset of early breakdown: higher charged particle density within the gap modifies the electric field profile, allowing unintended breakdowns to occur at a significantly reduced threshold voltage.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Effect of Transverse Compression on the Dielectric Breakdown of Power Cable with Ethylene Propylene Rubber Insulation

Understanding of the failure mechanisms of submarine dynamic power cables (SDPC) is critical for innovative design to meet the 2035 cost reduction target of U.S. DOE Floating Offshore Wind Shot. This is important because the current design suffers a significant failure rate in the field. This project explored a multiphysics approach and conducted systematic electro-thermo-mechanical (ETM) experimental study on the power cores extracted from a 15 kV power cable. The power cable had three cores of copper conductor and ethylene propylene rubber (EPR) insulation. An ETM testing system with transverse compression capability was developed. Mechanical loading induced dielectric breakdown. Increasing temperature from room temperature (RT, 22 degrees Celsius) to 90 degrees Celsius resulted in the 67% decrease in the failure mechanical load as defined by the dielectric breakdown. With the same temperature rise, the creep mechanical load was reduced by 70% at a given dielectric breakdown time. The post-test measurement revealed an impressive recovery of electrical resistance, although the dielectric breakdown occurred in the ETM test that would not be captured without the use of ETM testing.

Wang, Hong [ORNL] (ORCID:0000000201730545)↗
DOE OSTI2023

Pulsed photoemission induced plasma breakdown

Abstract This article characterises the effects of cathode photoemission leading to electrical discharges in an argon gas. We perform breakdown experiments under pulsed laser illumination of a flat cathode and observe Townsend to glow discharge transitions. The breakdown process is recorded by high-speed imaging, and time-dependent voltage and current across the electrode gap are measured for different reduced electric fields and laser intensities. We employ a 0D transient discharge model to interpret the experimental measurements. The fitted values of transferred photoelectron charge are compared with calculations from a quantum model of photoemission. The breakdown voltage is found to be lower with photoemission than without. When the applied voltage is insufficient for ion-induced secondary electron emission to sustain the plasma, laser driven photoemission can still create a breakdown where a sheath (i.e. a region near the electrode surfaces consisting of positive ions and neutrals) is formed. This photoemission induced plasma persists and decays on a much longer time scale ( ∼ 10 s μ s) than the laser pulse length ( 30 ps). The effects of different applied voltages and laser energies on the breakdown voltage and current waveforms are investigated. The discharge model can accurately predict the measured breakdown voltage curves, despite the existence of discrepancy in quantitatively describing the transient discharge current and voltage waveforms.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Direct Observations of Field-Intensity-Dependent Dielectric Breakdown Mechanisms in TiO 2 Single Nanocrystals

One of the main challenges for next-generation electric power systems and electronics is to avoid premature dielectric breakdown in insulators and capacitors and to ensure reliable operations at higher electric fields and higher efficiencies. However, dielectric breakdown is a complex phenomenon and often involves many different processes simultaneously. Here we show distinctly different defect-related and intrinsic breakdown processes by studying individual, single crystalline TiO 2 nanoparticles using in-situ transmission electron microscopy (TEM). As the applied electric field intensity rises, rutile-to-anatase phase transition, local amorphization/melting, or ablation are identified as the corresponding breakdown processes, the field intensity thresholds of which are found to be related to the position of the intensified field and the duration of the applied bias relative to the time of charged defects accumulation. Our observations reveal an intensity-dependent dielectric response of crystalline oxides at breakdown and suggest possible routes to suppress the iniation of premature dielectric breakdown. Hence, they will aid the design and development of next generation robust and efficient solid dielectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Verification of a Monte Carlo binary collision model for simulating elastic and inelastic collisions in particle-in-cell simulations

We present the development and verification of a Monte Carlo binary collision model for simulating elastic and inelastic collisions in particle-in-cell simulations. We apply the corrected binary collision model originally developed for charged-particles collisions to all considered scattering channels, including Coulomb collisions, elastic neutral–neutral and charged–neutral collisions, ionization, excitation, and fusion. The model's implementation is described and verified through a series of simulations, including charged- and neutral-particle thermal equilibration, slowing of electrons in warm solid-density aluminum, collisional damping of a Langmuir wave, helium gas breakdown in an applied electric field, and thermonuclear and beam–target fusion. Then, we demonstrate the model within simulations of hydrogen plasma formation in the Princeton Field-Reversed Configuration as well as of the burning of aneutronic fusion fuel p-11B. The latter includes measurement of the fusion power density in a low-density plasma and fusion production due to the stopping of a proton ignitor beam in a compressed boron target.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Plasma breakdown in bubbles passing between two pin electrodes

The ignition of plasmas in liquids has applications from medical instrumentation to manipulation of liquid chemistry. Formation of plasmas directly in a liquid often requires prohibitively large voltages to initiate breakdown. Producing plasma streamers in bubbles submerged in a liquid with higher permittivity can significantly lower the voltage needed to initiate a discharge by reducing the electric field required to produce breakdown. The proximity of the bubble to the electrodes and the shape of the bubbles play critical roles in the manner in which the plasma is produced in, and propagates through, the bubble. In this paper, we discuss results from a three-dimensional direct numerical simulation (DNS) used to investigate the shapes of bubbles formed by injection of air into water. Comparisons are made to results from a companion experiment. A two-dimensional plasma hydrodynamics model was then used to capture the plasma streamer propagation in the bubble using a static bubble geometry generated by the DNS The simulations showed two different modes for streamer formation depending on the bubble shape. In an elliptical bubble, a short electron avalanche triggered a surface ionization wave (SIWs) resulting in plasma propagating along the surface of the bubble. In a circular bubble, an electron avalanche first traveled through the middle of the bubble before two SIWs began to propagate from the point closest to the grounded electrode where a volumetric streamer intersected the surface. In an elliptical bubble approaching a powered electrode in a pin-to-pin configuration, we experimentally observed streamer behavior that qualitatively corresponds with computational results. Optical emission captured over the lifetime of the streamer curve along the path of deformed bubbles, suggesting propagation of the streamer along the liquid/gas boundary interface. Plasma generation supported by the local field enhancement of the deformed bubble surface boundaries is a mechanism that is likely responsible for initiating streamer formation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗