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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

The NASA GSFC MEMS Colloidal Thruster

A number of upcoming missions require different thrust levels on the same spacecraft. A highly scaleable and efficient propulsion system would allow substantial mass savings. One type of thruster that can throttle from high to low thrust while maintaining a high specific impulse is a Micro-Electro-Mechanical System (MEMS) colloidal thruster. The NASA GSFC MEMS colloidal thruster has solved the problem of electrical breakdown to permit the integration of the electrode on top of the emitter by a novel MEMS fabrication technique. Devices have been successfully fabricated and the insulation properties have been tested to show they can support the required electric field. A computational finite element model was created and used to verify the voltage required to successfully operate the thruster. An experimental setup has been prepared to test the devices with both optical and Time-Of-Flight diagnostics.

Cardiff, Eric H.↗
DOE OSTI2022

Wide bandgap semiconductor materials and devices

The technological and societal impacts of electronic devices based on Ge, Si, and compound semiconductors like GaAs have been profound, fueling the decades long quest in identifying ever-larger bandgap semiconductors to untap new applications and possibilities. Specifically, an increase in the bandgap leads to shorter wavelength emission and an increased breakdown electric field, which has direct consequences for solid-state lighting like light-emitting diodes (LEDs) and laser diodes (LDs) from the visible (blue-green, blue, and violet) and beyond (UV and deep-UV) spectral range and for radically improved power devices supported by a higher intrinsic breakdown strength. Wide bandgap (WBG) semiconductors represent the frontier of materials that satisfy these criteria and include group IV, III–V, and II–VI material families like SiC (3.2 eV), GaN (3.4 eV), and ZnO (3.4 eV), respectively. With even larger bandgaps exceeding 4 eV, ultrawide bandgap (UWBG) semiconductors include diamond, III-nitrides incorporating Al and B (e.g., AlN, BN, and AlGaN), and sesquioxides like Ga 2 O 3 and (Al,Ga) 2 O 3 . These materials span widely varying stages of technological maturity, with SiC and GaN platforms among the most mature with commercially available devices in RF and high-power electronics, while other platforms such as Ga 2 O 3 rapidly advancing and poised to enable new UV and deep-UV optoelectronic devices. This Special Topic on Wide Bandgap Semiconductor Materials and Devices covers broad research subtopics on WBG and UWBG materials that span bulk crystals, epitaxy and substrate technologies, fundamental defect science, and doping, as well as electronic and optoelectronic device fabrication and characterization. Here, we highlight works from the collection, which we categorize by material platform of SiC, III-nitrides, and Ga 2 O 3 and related alloys.

36 MATERIALS SCIENCE↗
NASA NTRS2006

High Voltage Breakdown Levels in Various EPC Potting Materials

This viewgraph presentation reviews exploration activities at JPL into various potting materials. Since high power space-borne microwave transmitters invariably use a vacuum tube as a final power amplifier, and this tube requires high electrode voltages for operation. The associated high voltage insulation typically represents a significant fraction of the mass of the transmitter. Since mass is always a premium resource on board spacecraft, we have been investigating materials with the potential to reduce the mass required for our applications here at JPL. This paper describes electrical breakdown results obtained with various potting materials. Conathane EN-11 (polyurethane) is the traditional HVPS encapsulant at JPL, but due to temperature limitations and durability issues it was deemed inappropriate for the particular application (i.e., CloudSat radar). The choices for the best available materials were epoxies, or silicones. Epoxies are too rigid, and were deemed inadvisable. Two silicones were further investigated (i.e.,ASTM E595- 93e2: GE RTV566(R) and Dow Corning 93-500X(R), another compound was considered (i.e., DC material, Sylgard 184(R)). "Loading" (adding filler materials) the potting compound will frequently alter the final material properties. Powdered alumina and borosilicate glass known as "microballoons" were investigated as possible loading materials. The testing of the materials is described. Each of the two loading materials offers advantages and disadvantages. The advantages and disadvantages are described.

encapsulants↗
DOE OSTI2022

Breakdown characteristics of deep-ultraviolet Al 0.6 Ga 0.4 N p-i-n avalanche photodiodes

A top-illuminated deep-ultraviolet Al 0.6 Ga 0.4 N p-i-n avalanche photodiode (APD) structure was designed and grown by metalorganic chemical vapor deposition on an AlN bulk substrate and on two different quality AlN/sapphire templates, and APDs were fabricated and tested. The APD devices with a circular diameter of 20 μm have demonstrated a distinctive reverse-bias breakdown behavior. The reverse breakdown voltage of the APDs is approximately -140 V, which corresponds to a breakdown electric field of 6–6.2 MV/cm for the Al 0.6 Ga 0.4 N material as estimated by Silvaco TCAD simulation. The APDs grown on the AlN bulk substrate show the lowest leakage current density of < 1 × 10 -8 A/cm 2 (at low reverse bias) compared to that of the devices grown on the AlN templates. From the photocurrent measurement, a maximum gain (current limited) of 1.2 × 10 4 is calculated. The average temperature coefficients of the breakdown voltage are negative for APD devices fabricated from both the AlN bulk substrate and the AlN templates, but these data show that the coefficient is the least negative for the APD devices grown on the low-dislocation-density AlN bulk substrate.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1977

Superbroadening in H2O and D2O by self-focused picosecond pulses from a YAlG:Nd laser

The dielectric-breakdown intensity threshold, the critical power for self-focusing, and the power threshold for the production of spectral superbroadening have been measured in H2O and D2O. For bandwidth-limited pulses of 30 psec duration at 1.06 microns and of 21 psec duration at 0.53 micron, the superbroadening in water always required power levels sufficient for catastrophic self-focusing and intensities equal to the electric breakdown threshold.

Smith, W. L.↗
DOE OSTI2021

Filamentary surface plasma discharge flow length and time scales

Nanosecond surface dielectric barrier discharges (ns-SDBDs) are a class of plasma actuators that utilize a high-voltage pulse of nanosecond duration between two surface-mounted electrodes to create an electrical breakdown of air, along with rapid heating. These actuators usually produce multiple filaments when operated at high pulse frequencies, and the rapid heating leads to the formation of shock waves and complex flow fields. In this work we replicate a single filament of the ns-SDBDs and characterize the induced flow using velocity measurements from particle image velocimetry and density measurements from background-oriented schlieren. The discharge is produced by a high voltage electrical pulse between two copper electrodes on an acrylic base. A hot gas kernel characterizes the flow field formed close to the electrodes that expands and cools over time and a vortex ring that propagates away from the surface while entraining cold ambient fluid. The gas density deficit inside the kernel displays a power-law decay over time. Based on the observations, we develop a simplified theoretical model based on vortex-driven cooling and perform a scaling analysis to obtain the induced flow length and time scales. The results show that the cooling process's time scales correspond to a circulation-based time scale of the vortex ring, and the length scale of the kernel corresponds to the vortex ring radius. Furthermore, these findings can guide the choice of optimal filament spacing and pulse frequencies in the design, deployment, and operation of ns-SDBDs for flow control.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1996

Low Pressure Experimental Simulation of Electrical Discharges Above and Inside a Cloud

A low pressure laboratory experiment to generate sporadic electrical discharges in either a particulate dielectric or air, representing a competing path of preferred electrical breakdown, was investigated. At high pressures, discharges occurred inside the dielectric particulate; at low pressures, discharges occurred outside the dielectric particulate; at a transition pressure regime, which depends on conductivity of the dielectric particulate, discharges were simultaneously generated in both particulate dielectric and air. Unique use of a particulate dielectric was critical for sporadic discharges at lower pressures which were not identical in character to discharges without the particulate dielectric. Application of these experimental results to the field of atmospheric electricity and simulation of the above-cloud type discharges that have recently been documented, called jets and sprites, are discussed.

Jarzembski, Maurice A.↗
NASA NTRS2014

Polarimetric and Multi-Doppler Radar Observations of Sprite-producing Storms

Sprites are caused by luminous electrical breakdown of the upper atmosphere, and frequently occur over large mesoscale precipitation systems. Two sprite‐producing storms (on 8 and 25 June) were observed in Colorado during the summer of 2012. Unlike most past studies of sprites, these storms were observed by a polarimetric radar ‐ the CSU‐CHILL facility ‐ which provided both PPI and RHI scans of the cases. Also available were multiple‐Doppler syntheses from CSU‐CHILL, local NEXRAD radars, and the CSU‐Pawnee radar; as well as data from the Colorado Lightning Mapping Array (COLMA), high speed cameras, and other lightning‐detection instrumentation. This unique dataset provided an unprecedented look at the detailed kinematic and microphysical structures of the thunderstorms as they produced sprites, including electrical alignment signatures in the immediate location of the charge layers neutralized by sprite‐parent positive cloud‐to‐ground lightning strokes. One of the sprite‐producing cases (25 June) featured an anomalous charge structure and may serve as a model for how sprites can be produced over convection rather than the more typical stratiform regions. Also to be presented will be evidence for advection of charge into a common stratiform precipitation region (on 8 June), which was then tapped by lightning originating from multiple different convective cores to produce sprites. Depending on the outcome of the 2013 convective season, polarimetric data from additional storms that produce sprites and other transient luminous events (TLEs) may be presented.

Lang, TImothy J.↗
DOE OSTI2023

Integration of Ultrawide Bandgap Photoconducting Semiconductor Switches into High-Voltage, High-Current Pulser Systems

In this feasibility study we will evaluate the viability of integrating ultrawide bandgap (UWBG) photoconducting semiconductor switches (PCSS) in high-voltage pulser systems capable of driving low-impedance dynamic loads critical for next-generation accelerator and RF-source applications. The project consisted of developing modelling tools that would inform design of UWBG PCSS packages that could be mounted onto conventional circuit boards. Specifically, we are interested in evaluating the following through simulation software: (1) resistance to electrical breakdown (2) proximity effects due to high-frequency skin effect (3) transient behavior from switching (4) effective transmission of RF signals (5) thermal dynamics of the switch under operation (6) sensitivity to inhomogeneities in optical excitation of the material (7) cross-talk effects from parallel switching structures, and (8) susceptibility of system to damaged components. The project resulted in the development of a special-purpose circuit code that implements photoconductivity physics. This code was used to evaluate objectives 1-6 above, identifying a critical requirement associated with the need for fine control of dopant concentrations in the UWBG material to reach an optimal solution for voltage standoff and laser light responsivity requirements. In addition, we identified that the temperature dependence of the electrical conductivity of this material was typically not well-measured and developed a platform for measuring both the “dark” and “illuminated” conductivity on real physical switches in the lab to better inform our models.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Unprecedented Multifunctionality in 1D Nb 1- x Ta x S 3 Transition Metal Trichalcogenide Alloy

One-dimensional (1D) van der Waals materials, such as nanofibers or nanoribbons are considered as the future ultimate limit of downscaling for modern electrical and electrochemical devices. Here, for the first time, we successfully synthesize nanofibers of a solid solution transition metal trichalcogenide (TMTC), Nb 1-x Ta x S 3 , with outstanding electrical, thermal, and electrochemical characteristics rivaling the performance of the-state-of-the art materials for each application. This material shows nearly unchanged sheet resistance (≈740 Ω/sq -1 ) versus bending cycles tested up to 90 cycles, stable sheet resistance in ambient conditions tested up to 60 days, remarkably high electrical breakdown current density of ≈ 30 MA cm -2 , strong evidence of successive charge density wave (CDW) transitions, and outstanding thermal stability up to ≈900 K. Additionally, this material demonstrates excellent activity and selectivity for CO2 conversion to CO reaching ≈ 350 mA cm -2 at – 0.8 V vs RHE with an outstanding turnover frequency number of 25 for CO formation. It also exhibits an excellent performance in a high-rate Li-air battery with the specific capacity of 3000 mAhg -1 at a high current density of 0.3 mAcm -2 . This study uncovers the multifunctionality in 1D TMTC alloys for a wide range of high-impact applications and opens a new direction for the design of the next generation of low-dimensional materials with high performance.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Exploring the Pb 1− x Sr x HfO 3 System and Potential for High Capacitive Energy Storage Density and Efficiency

Abstract The hafnate perovskites PbHfO 3 (antiferroelectric) and SrHfO 3 (“potential” ferroelectric) are studied as epitaxial thin films on SrTiO 3 (001) substrates with the added opportunity of observing a morphotropic phase boundary (MPB) in the Pb 1− x Sr x HfO 3 system. The resulting (240)‐oriented PbHfO 3 ( Pba 2) films exhibited antiferroelectric switching with a saturation polarization ≈53 µC cm −2 at 1.6 MV cm −1 , weak‐field dielectric constant ≈186 at 298 K, and an antiferroelectric‐to‐paraelectric phase transition at ≈518 K. (002)‐oriented SrHfO 3 films exhibited neither ferroelectric behavior nor evidence of a polar P 4 mm phase . Instead, the SrHfO 3 films exhibited a weak‐field dielectric constant ≈25 at 298 K and no signs of a structural transition to a polar phase as a function of temperature (77–623 K) and electric field (–3 to 3 MV cm −1 ). While the lack of ferroelectric order in SrHfO 3 removes the potential for MPB, structural and property evolution of the Pb 1− x Sr x HfO 3 (0 ≤ x < 1) system is explored. Strontium alloying increased the electric‐breakdown strength ( E B ) and decreased hysteresis loss, thus enhancing the capacitive energy storage density ( U r ) and efficiency (η). The composition, Pb 0.5 Sr 0.5 HfO 3 produced the best combination of E B = 5.12 ± 0.5 MV cm −1 , U r = 77 ± 5 J cm −3 , and η = 97 ± 2%, well out‐performing PbHfO 3 and other antiferroelectric oxides.

Acharya, Megha↗
DOE OSTI2022

Atomic-Scale Modulation of Synthetic Magnetic Order in Oxide Superlattices

We report atomic-scale precision control of magnetic interactions facilitates a synthetic spin order useful for spintronics, including advanced memory and quantum logic devices. Conventional modulation of synthetic spin order has been limited to metallic heterostructures that exploit Ruderman–Kittel–Kasuya–Yosida interaction through a nonmagnetic metallic spacer; however, they face issues arising from Joule heating and/or electric breakdown. The practical realization and observation of a synthetic spin order across a nonmagnetic insulating spacer will lead to the development of spin-related devices with a completely different concept. Herein, the atomic-scale modulation of the synthetic spiral spin order in oxide superlattices composed of ferromagnetic metal and nonmagnetic insulator layers is reported. The atomically controlled superlattice exhibits an oscillatory magnetic behavior, representing the existence of a spiral spin structure. Depth-sensitive polarized neutron reflectometry evidences modulated spiral spin structures as a function of the nonmagnetic insulator layer thickness. Atomic-scale customization of the spin state can move the field one step further to actual spintronic applications.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2022

Hedging direct simulation Monte Carlo bets via event splitting

We propose a new scheme for simulation of collisions with multiple possible outcomes in variable-weight DSMC computations. The scheme is applied to a 0-D ionization rate coefficient computation, and 1-D electrical breakdown simulation. We show that the scheme offers a significant (up to an order of magnitude) improvement in the level of stochastic noise over the usual acceptance-rejection algorithm, even when controlling for the slight additional computational costs. Furthermore, the benefits and performance of the scheme are analyzed in detail, and possible extensions are proposed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Chemical Design of Pb-Free Relaxors for Giant Capacitive Energy Storage

Dielectric capacitors have captured substantial attention for advanced electrical and electronic systems. Developing dielectrics with high energy density and high storage efficiency is challenging owing to the high compositional diversity and the lack of general guidelines. Herein, we propose a map that captures the structural distortion ($\delta$) and tolerance factor (t) of perovskites to design Pb-free relaxors with extremely high capacitive energy storage. Our map shows how to select ferroelectric with large $\delta$ and paraelectric components to form relaxors with a t value close to 1 and thus obtaining eliminated hysteresis and large polarization under a high electric breakdown. Taking the Bi 0.5 Na 0.5 TiO 3 -based solid solution as an example, we demonstrate that composition-driven predominant order-disorder characteristic of local atomic polar displacements endows the relaxor with a slushlike structure and strong local polar fluctuations at several nanoscale. This leads to a giant recoverable energy density of 13.6 J cm -3 , along with an ultrahigh efficiency of 94%, which is far beyond the current performance boundary reported in Pb-free bulk ceramics. In conclusion, our work provides a solution through rational chemical design for obtaining Pb-free relaxors with outstanding energy-storage properties.

25 ENERGY STORAGE↗
DOE OSTI2025

Efficient on-chip terahertz generation and detection with GaN photoconductive emitters

Photoconductive emitters for terahertz generation hold promise for highly efficient down-conversion of optical photons because it is not constrained by the Manley-Rowe relation. Existing terahertz photoconductive devices, however, faces limits in efficiency due to the semiconductor properties of commonly used GaAs materials. Here, we demonstrate that large bandgap semiconductor GaN, characterized by its high breakdown electric field, facilitates the highly efficient generation of terahertz waves in a coplanar stripline waveguide. Towards this goal, we investigated the excitonic contribution to the electro-optic response of GaN under static electric field both through experiments and first-principles calculations, revealing a robust excitonic Stark shift. Using this electro-optic effect, we developed a novel ultraviolet pump-probe spectroscopy for in-situ characterization of the terahertz electric field strength generated by the GaN photoconductive emitter. Our findings show that terahertz power scales quadratically with optical excitation power and applied electric field over a broad parameter range. We achieved an optical-to-terahertz conversion efficiency approaching 100% within the 0.03–1 THz bandwidth at the highest bias field (116 kV/cm) in our experiment. Further optimization of GaN-based terahertz generation devices could achieve even greater optical-to-terahertz conversion efficiencies.

Uzundal, Can B↗
DOE OSTI2022

Giant energy-storage density with ultrahigh efficiency in lead-free relaxors via high-entropy design

Next-generation advanced high/pulsed power capacitors rely heavily on dielectric ceramics with high energy storage performance. However, thus far, the huge challenge of realizing ultrahigh recoverable energy storage density (W rec ) accompanied by ultrahigh efficiency (η) still existed and has become a key bottleneck restricting the development of dielectric materials in cutting-edge energy storage applications. Here, we propose a high-entropy strategy to design “local polymorphic distortion” including rhombohedral-orthorhombic-tetragonal-cubic multiphase nanoclusters and random oxygen octahedral tilt, resulting in ultrasmall polar nanoregions, an enhanced breakdown electric field, and delayed polarization saturation. A giant W rec ~10.06 Jcm –3 is realized in lead-free relaxor ferroelectrics, especially with an ultrahigh η ~90.8%, showing breakthrough progress in the comprehensive energy storage performance for lead-free bulk ceramics. This work opens up an effective avenue to design dielectric materials with ultrahigh comprehensive energy storage performance to meet the demanding requirements of advanced energy storage applications.

25 ENERGY STORAGE↗
DOE OSTI2021

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) were fabricated on Si substrates with a 10 nm boron nitride (BN) layer as a gate dielectric deposited by electron cyclotron resonance microwave plasma chemical vapor deposition. The material characterization of the BN/GaN interface was investigated by X-ray photoelectric spectroscopy (XPS) and UV photoelectron spectroscopy. The BN bandgap from the B1s XPS energy loss is ~5 eV consistent with sp2 bonding. The MISHEMTs exhibit a low off-state current of 1 × 10 –8 mA/mm, a high on/off current ratio of 10 9 , a threshold voltage of –2.76 V, a maximum transconductance of 32 mS/mm at a gate voltage of –2.1 V and a drain voltage of 1 V, a subthreshold swing of 69.1 mV/dec, and an on-resistance of 12.75 Ω·mm. The interface state density (D it ) is estimated to be less than 8.49 × 10 11 cm –2 eV –1 . Gate leakage current mechanisms were investigated by temperature-dependent current–voltage measurements from 300 K to 500 K. The maximum breakdown electric field is no less than 8.4 MV/cm. Poole–Frenkel emission and Fowler–Nordheim tunneling are indicated as the dominant mechanisms of the gate leakage through the BN gate dielectric at low and high electric fields, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Effect of insulator surface conditioning on the pinch dynamics and x-ray production of a Ne-filled dense plasma focus

The dense plasma focus (DPF) can be an intense source of x rays, wherein the insulator sleeve strongly dictates the electrical breakdown, which subsequently affects the formation of a plasma sheath and a collapse phase. Experiments on a 25 kJ DPF (operated at 4.4 kJ) are carried out to demonstrate the influence of insulator surface morphology on the pinch structure, dynamics, and x-ray yield using a Ne fill. Two borosilicate insulators are directly compared, one with a smooth finish and the other machined with four circumferential grooves traversing the perimeter of the exterior insulator surface. Comparisons are made through same-shot imaging diagnostics of the evolving plasma sheath during breakdown, rundown, and at the pinch in addition to the time-resolved measurements of emitted x rays via filtered photodiodes. The presence of structures on the insulator sleeve reduces x-ray production across all fill pressures by a factor of 2.8 ± 2.4 on average and reduces the highest x ray producing shots by a factor of 5. ± 1.8. Observations of sheath asymmetry and inhomogeneity at lift-off are observed and correlated with subsequent observations of off-axis radial collapse. Taken together, this suggests that local variations in the insulator surface decrease the spatial uniformity of the sheath, leading to an azimuthally asymmetric focus, reduced electron densities, and, ultimately, degraded x-ray production.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗