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At least 91 records · Page 5

Electrical Tuning of Exciton Binding Energies in Monolayer WS 2

We demonstrate continuous tuning of the exciton binding energy in monolayer WS 2 by means of an externally applied voltage in a field-effect transistor device. Using optical spectroscopy, we monitor the ground and excited excitonic states as a function of gate voltage and track the evolution of the quasiparticle band gap. Here, the observed decrease of the exciton binding energy over the range of about 100 meV, accompanied by the renormalization of the quasiparticle band gap, is associated with screening of the Coulomb interaction by the electrically injected free charge carriers at densities up to 8 × 10 12 cm –2 . Complete ionization of the excitons due to the electrical doping is estimated to occur at a carrier density of several 10 13 cm –2 .

42 ENGINEERING↗

Structural Insight into a Sixteen Cyanine Dye Construct via Exciton–Exciton Annihilation

Molecular (dye) aggregates play a prominent role in light harvesting and are of interest in quantum information science; however, there are limited reports hat programmably assemble many (>4) dye aggregates featuring strong coupling and exciton delocalization. Using oligonucleotides with four Cy5s covalently linked in series along the phosphate backbone, we bring four, eight, and sixteen Cy5s in close proximity by assembling four-armed junctions. We elucidate their structure via gel electrophoresis and steady-state and transient optical spectroscopy. We find that Cy5 has a strong propensity to form tetramer clusters, where the exciton is delocalized over all four Cy5s, that the exciton is not delocalized beyond tetramer clusters in the eight and sixteen Cy5 constructs, and that the sixteen Cy5 construct may consist of pairs of tetramer clusters that are isolated from one another. Many-dye aggregates such as these may serve useful as antennae for their intense light absorption and spatially directed energy transfer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb

We calculate the wave functions and the energy levels of an exciton in double quantum wells under electric (F) and magnetic (B) fields along the growth axis. The result is employed to study the energy levels, the binding energy, and the boundary on the F–B plane of the phase between the indirect exciton ground state and the semiconductor ground state for several typical structures of the type-II quasi-two-dimensional quantum wells such as InAs/AlSb/GaSb. The inter-well inter-band radiative transition rates are calculated for exciton creation and recombination. We find that the rates are modulated over several orders of magnitude by the electric and magnetic fields.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Distinct exciton dissociation behavior of organolead trihalide perovskite and excitonic semiconductors studied in a same device

The nonexcitonic character for organometal trihalide perovskites is demonstrated by examining the field-dependent exciton dissociation behavior. Moreover, it is found that photogenerated excitons can be effectively dissociated into free charges inside perovskite without the assistance of charge extraction layer or external field, which is a stark contrast to the charge-separation behavior in excitonic materials in the same photovoltaic operation system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Exciton–exciton annihilation and biexciton stimulated emission in graphene nanoribbons

Graphene nanoribbons display extraordinary optical properties due to one-dimensional quantum-confinement, such as width-dependent bandgap and strong electron–hole interactions, responsible for the formation of excitons with extremely high binding energies. Here we use femtosecond transient absorption spectroscopy to explore the ultrafast optical properties of ultranarrow, structurally well-defined graphene nanoribbons as a function of the excitation fluence, and the impact of enhanced Coulomb interaction on their excited states dynamics. We show that in the high-excitation regime biexcitons are formed by nonlinear exciton–exciton annihilation, and that they radiatively recombine via stimulated emission. We obtain a biexciton binding energy of ≈250meV, in very good agreement with theoretical results from quantum Monte Carlo simulations. As a result, these observations pave the way for the application of graphene nanoribbons in photonics and optoelectronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Tunable exciton binding energy in 2D hybrid layered perovskites through donor–acceptor interactions within the organic layer

The strength of electrostatic interactions within semiconductors strongly affects their performance in optoelectronic devices. An important target is the tuning of a material’s exciton binding energy—the energy binding an electron–hole pair through the electrostatic Coulomb force—independent of its electronic band gap. Here, we report on the doping of a family of two-dimensional hybrid perovskites, in which inorganic lead halide sheets alternate with naphthalene-based organic layers, with tetrachloro-1,2-benzoquinone (TCBQ). For four out of seven n = 1 perovskites, the incorporation of the electron-accepting TCBQ dopant into the organic sublattice containing the electron-donating naphthalene species enabled the tuning of the materials’ 1s exciton binding energy. The naphthalene–TCBQ electron donor–acceptor interactions increased the electrostatic screening of the exciton, in turn lowering its binding energy relative to the undoped perovskite—by almost 50% in one system. Structural and optical characterization showed that the inorganic lattice is not significantly perturbed even though the layer-to-layer spacing increases upon molecular dopant incorporation.

36 MATERIALS SCIENCE↗

Mechanistic origins of excitonic properties in 2D perovskites: Implications for exciton engineering

As the field of 2D halide perovskites (HPs) matures, state-of-the-art techniques to measure important properties, such as the band gap (E g ) and exciton binding energy (E b ), continue to produce inconsistent values. Here, we tackle this long-standing problem by obtaining direct measurements of E g and E b for 31 unique HP structures. The E b values are lower than in previous literature reports and lower than expected from standard theory that assumes excitons are screened by optical-frequency dielectric constants. These low E b values are shown to be a consequence of unique screening effects, such as superlattice screening and phonon screening. Here, we find a strikingly strong correlation between E b and E g and provide design principles to a priori tune E g and E b to their optimal values. As such, this work offers a blueprint for E g -E b engineering of low-dimensional semiconductors as an even more useful replacement for simply band-gap engineering.

14 SOLAR ENERGY↗

Exciton photoluminescence and benign defect complex formation in zinc tin nitride

Emerging photovoltaic materials need to prove their viability by demonstrating excellent electronic properties. In ternary and multinary semiconductors, disorder and off-stoichiometry often cause defects that limit the potential for high-efficiency solar cells. We report on Zn-rich ZnSnN 2 (Zn/(Zn + Sn) = 0.67) photoluminescence, high-resolution X-ray diffraction, and electronic structure calculations based on Monte-Carlo structural models. The mutual compensation of Zn excess and O incorporation affords a desirable reduction of the otherwise degenerate n-type doping, but also leads to a strongly off-stoichiometric and disordered atomic structure. It is therefore remarkable that we observe only near-edge photoluminescence from well-resolved excitons and shallow donors and acceptors. Based on first principles calculations, this result is explained by the mutual passivation of Zn Sn and O N defects that renders both electronically benign. The calculated bandgaps range between 1.4 and 1.8 eV, depending on the degree of non-equilibrium disorder. The experimentally determined value of 1.5 eV in post-deposition annealed samples falls within this interval, indicating that further bandgap engineering by disorder control should be feasible via appropriate annealing protocols.

36 MATERIALS SCIENCE↗

Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning transmission electron microscopy. We show that some nanowires exhibit well localized regions emitting light at the energy of a stacking fault bound exciton (3.42 eV) and are able to observe the presence of a single stacking fault in these regions. Precise measurements of the cathodoluminescence signal in the vicinity of the stacking fault give access to the exciton diffusion length near this location.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer quantum dots via spectral analysis of optical signature of the Aharanov-Bohm excitons

For submonolayer quantum dot (QD) based photonic devices, size and density of QDs are critical parameters, the probing of which requires indirect methods. We report the determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer QDs, based on spectral analysis of the optical signature of Aharanov-Bohm (AB) excitons, complemented by photoluminescence studies, secondary-ion mass spectroscopy, and numerical calculations. Numerical calculations are employed to determine the AB transition magnetic field as a function of the type-II QD radius. The study of four samples grown with different tellurium fluxes shows that the lateral size of QDs increases by just 50%, even though tellurium concentration increases 25-fold. Detailed spectral analysis of the emission of the AB exciton shows that the QD radii take on only certain values due to vertical correlation and the stacked nature of the QDs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Interlayer Exciton Polarons in Mesoscopic V 2 O 5 for Broadband Optoelectronic Synapses

Persistent photoconductivity and optoelectronic synaptic behavior are demonstrated in solution-processed mesoscopic α-phase vanadium pentoxide (V 2 O 5 ) thin films. First-principles simulations coupled with the two-site Holstein polaron hopping model show that vacancies at the terminal oxygen position lead to long recombination times because photoexcited electrons and holes reside on different layers separated by the van der Waals gap, forming a weakly coupled interlayer exciton polaron. Mid-gap polaronic states also significantly broaden the photoresponse of the films to span across visible and infrared wavelengths. By controlling the amplitude/intensity, duration, and/or number of optical pulses, tunable optoelectronic memory functions, such as short-term and long-term plasticity, are experimentally established in V 2 O 5 -based optoelectronic synapses. Furthermore, device fabrication was extended to mechanically flexible ultrathin glass substrates. Flexible optoelectronic synapses maintained high performance after 150 bending cycles.

Phan, Thanh Luan [National Renewable Energy Labora↗

Highly Coupled Heterobicycle‐Fused Porphyrin Dimers: Excitonic Coupling and Charge Separation with Coordinated Fullerene, C 60

Abstract Porphyrin dimers have been widely explored and studied owing to their importance in photosynthetic systems. A vast variety of dimers linked by different groups and at different angles have been synthesized and studied; however, the means by which to synthesize rigidly fused porphyrins with direct conjugation of the chromophores remains limited. Such a class of porphyrins may possess interesting properties that unconjugated or stacked dimers may not exhibit. In this study, bisbenzimidazole‐fused porphyrin dimers and their mono‐ and bis−zinc derivatives are synthesized and characterized. As a consequence of excitonic coupling, these dimers exhibit a split Soret band irrespective of the metal ion in the porphyrin cavity. Steady‐state fluorescence and excitation spectra followed by femtosecond transient absorption spectral studies of the heterometallated dimer, (free‐base and zinc porphyrin) reveals the occurrence of efficient singlet‐singlet energy transfer (>95 % efficiency and rate constant >10 12 s −1 ) within the dyad. Further, donor‐acceptor conjugates were formed by metal‐ligand axial coordination of phenyl imidazole functionalized C 60 and were characterized by a variety of physicochemical techniques. Excited state charge separation from both singlet and triplet excited states of ZnP in the conjugates has been established. The lifetime of the final charge‐separated state was in the 30–40 μs range revealing charge stabilization. Interestingly, no charge separation in the conjugate derived from the heterometallated dimer was observed wherein excitation transfer dominated the process. The present study brings out the importance of the rigid π‐spacer connecting porphyrin dimers in governing the energy and electron transfer events when coupled with an electron acceptor.

Chemistry↗

Tunable exciton-polaritons emerging from WS 2 monolayer excitons in a photonic lattice at room temperature

Engineering non-linear hybrid light-matter states in tailored lattices is a central research strategy for the simulation of complex Hamiltonians. Excitons in atomically thin crystals are an ideal active medium for such purposes, since they couple strongly with light and bear the potential to harness giant non-linearities and interactions while presenting a simple sample-processing and room temperature operability. We demonstrate lattice polaritons, based on an open, high-quality optical cavity, with an imprinted photonic lattice strongly coupled to excitons in a WS 2 monolayer. We experimentally observe the emergence of the canonical band-structure of particles in a one-dimensional lattice at room temperature, and demonstrate frequency reconfigurability over a spectral window exceeding 85 meV, as well as the systematic variation of the nearest-neighbour coupling, reflected by a tunability in the bandwidth of the p-band polaritons by 7 meV. The technology presented in this work is a critical demonstration towards reconfigurable photonic emulators operated with non-linear photonic fluids, offering a simple experimental implementation and working at ambient conditions.

36 MATERIALS SCIENCE↗

Improved value for the silicon free exciton binding energy

The free exciton binding energy is a key parameter in silicon material and device physics. In particular, it provides the necessary link between the energy threshold for valence to conduction band optical absorption and the bandgap determining electronic properties. The long accepted low temperature binding energy value of 14.7 ± 0.4 meV is reassessed taking advantage of developments subsequent to its original determination, leading to the conclusion that this value is definitely an underestimate. Using three largely independent experimental data sets, an improved low temperature value of 15.01 ± 0.06 meV is deduced, in good agreement with the most comprehensive theoretical calculations to date.

36 MATERIALS SCIENCE↗

Observation of intravalley phonon scattering of 2s excitons in MoSe 2 and WSe 2 monolayers

Abstract We present a high-resolution resonance Raman study of hBN encapsulated MoSe 2 and WSe 2 monolayers at 4 K using excitation energies from 1.6 eV to 2.25 eV. We report resonances with the WSe 2 A2s and MoSe 2 A2s and B2s excited Rydberg states despite their low oscillator strength. When resonant with the 2s states we identify new Raman peaks which are associated with intravalley scattering between different Rydberg states via optical phonons. By calibrating the Raman scattering efficiency and separately constraining the electric dipole matrix elements, we reveal that the scattering rates for k = 0 optical phonons are comparable for both 1s and 2s states despite differences in the envelope functions. We also observe multiple new dispersive Raman peaks including a peak at the WSe 2 A2s resonance that demonstrates non-linear dispersion and peak-splitting behavior that suggests the dispersion relations for dark excitonic states at energies near the 2s state are extremely complex.

Materials Science↗