Zero-bias conductance peak in Dirac semimetal-superconductor devices
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Here we present a theory for thin films of the Dirac semimetal Cd 3 As 2 in the presence of magnetic fields. We show that, above a critical thickness, specific subbands n of thin film Cd 3 As 2 are in a quantum spin Hall insulator regime and study their response to in- and out-of-plane magnetic fields. We find that sufficiently large in-plane Zeeman fields drive the system toward a 2D Dirac semimetal regime, provided the field is directed perpendicular to a high-symmetry mirror plane. For other directions, we find the Dirac points to be weakly gapped. We further investigate how the system responds to finite out-of-plane field components, both starting from the quantum spin Hall regime at small in-plane fields and from the 2D Dirac semimetal regimes at larger in-plane fields, addressing recent experimental observations in A. C. Lygo et al. [Phys. Rev. Lett. 130, 046201 (2023)] and B. Guo et al. [Phys. Rev. Lett. 131, 046601 (2023)].
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Twisted bilayer graphene (TBG) near "magic angles" has emerged as a rich platform for strongly correlated states of two-dimensional (2D) Dirac semimetals. Here we show that twisted bilayers of thin film magnetic topological insulators (MTIs) with large in-plane magnetization can realize flat bands near 2D Dirac nodes. Using a simple model for thin films of MTIs, we derive a continuum model for two such MTIs, twisted by a small angle with respect to each other. When the magnetization is in plane, we show that interlayer tunneling terms act as effective SU (2) vector potentials, which are known to lead to flat bands in TBG. We show that by changing the in-plane magnetization, it is possible to tune the twisted bilayer MTI band dispersion to quadratic band touching or to flat bands, similar to the TBG. If realized, this system can be a highly tunable platform for strongly correlated phases of two-dimensional Dirac semimetals.
Nickel ditelluride (NiTe 2 ), a recently discovered Type-II Dirac semimetal with topological Dirac fermions near the Fermi energy, is expected to exhibit strong thickness-mediated electronic tunability and intrinsic two-gap superconductivity in the single-layer limit. Realizing such intriguing phenomena requires the fabrication of ultrathin NiTe 2 films and an understanding of the underlying physics that is still under debate. By conducting experimental band mappings of ultrathin films prepared with molecular beam epitaxy, we reveal spectroscopic evidence for the dimensionality crossover of single-crystalline ultrathin NiTe 2 films as a function of film thickness. As the film thickness increases from one to five layers, the gap in the conical topological surface states closes. Comparisons of experimental to first-principles results also highlight difficulties in fabricating atomically smooth single-layer NiTe 2 films. Our results not only provide further impetus for studying emergent phenomena in NiTe 2 but also underscore the limitations of fabricating NiTe 2 films for device applications.
In a Dirac semimetal, the massless Dirac fermion has zero chirality, leading to surface states connected adiabatically to a topologically trivial surface state as well as vanishing anomalous Hall effect. Recently, it is predicted that in the nonrelativistic limit of certain collinear antiferromagnets, there exists a type of chiral "Dirac-like" fermion, whose dispersion manifests four-fold degenerate crossing points formed by spin-degenerate linear bands, with topologically protected Fermi arcs. Such an unconventional chiral fermion, protected by a hidden SU(2) symmetry in the hierarchy of an enhanced crystallographic group, namely spin space group, is not experimentally verified yet. Here, by angle-resolved photoemission spectroscopy measurements, we reveal the surface origin of the electron pocket at the Fermi surface in collinear antiferromagnet CoNb 3 S 6 . Combining with neutron diffraction and first-principles calculations, we suggest a multidomain collinear antiferromagnetic configuration, rendering the the existence of the Fermi-arc surface states induced by chiral Dirac-like fermions. Finally, our work provides spectral evidence of the chiral Dirac-like fermion caused by particular spin symmetry in CoNb 3 S 6 , paving an avenue for exploring new emergent phenomena in antiferromagnets with unconventional quasiparticle excitations.
The three-dimensional Dirac semimetal is a parent phase for a variety of topological phases that can be generated by tuning parameters in material growth or device operation. Notably, it has recently been found that cadmium arsenide, which is ordinarily a three-dimensional Dirac semimetal, can nevertheless realize a three-dimensional topological insulator in (001)-oriented films about 50-nm thick. In this work, we study the quantum Hall effect in thin (001)-oriented cadmium arsenide films, their thickness ranging from 12 to 24 nm. When the carrier density is kept approximately constant across the different films, quantum transport reveals an identical underlying picture. The result is shown to be consistent with the transport's origin in the surface states of a three-dimensional topological insulator, but problematic for a perspective in which the quantum Hall effect originates from the confined subbands of the bulk band structure. As a result, these thin-film results complement previous studies of the quantum Hall effect in 50-nm-thick films.
Cadmium Arsenide (Cd3As2) is a prototypical Dirac semimetal that manifests topological properties in a 3D bulk material. In defect-free Cd3As2, the Fermi level lies at a minimum in the density of states at the Dirac point, but experimentally it forms with excess electron carriers and an elevated EF, thereby masking the topological features. To computationally study the self-doping of Cd3As2, we combine density functional theory (DFT) calculations for defect formation energies with quasi-particle self-consistent GW (QSGW) electronic structure calculations. We demonstrate an innate dependence of the point defect formation energies on carrier concentrations and use the QSGW calculated density of states to extrapolate formation energies to arbitrary electron concentrations. This approach allows the quantitative modeling of thermodynamic defect equilibria in topological semimetals and is used to predict how Cd3As2 growth conditions affect the position of EF relative to the Dirac point.
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Trisodium bismuthide (Na 3 Bi) is the first experimentally verified topological Dirac semimetal, and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realizing topological electronic devices such as topological transistors. Herein, an overview of the substantial progress achieved in the last few years on Na 3 Bi is presented, with a focus on technologically relevant large-area thin films synthesized via molecular beam epitaxy. Key theoretical aspects underpinning the unique electronic properties of Na 3 Bi are introduced. Next, the growth process on different substrates is reviewed. Spectroscopic and microscopic features are illustrated, and an analysis of semiclassical and quantum transport phenomena in different doping regimes is provided. Furthermore, the emergent properties arising from confinement in two dimensions, including thickness-dependent and electric-field-driven topological phase transitions, are addressed, with an outlook toward current challenges and expected future progress.
The interplay between topological electronic structure and superconductivity has attracted tremendous research interests recently as they could induce topological superconductivity (TSCs) which may be used to realize topological qubits for quantum computation. Among various TSC candidates, superconducting BaSn 3 (T c ~ 4.4K) has been predicted to be a topological Dirac semimetal (TDS) hosting two pairs of Dirac points along the Γ-A direction. Here, by combining the use of angle-resolved photoemission spectroscopy and ab initio calculations, we identified the predicted topological Dirac fermions and confirmed the TDS nature of the compound. In addition, we observed surface states connecting the Dirac points. Our observations demonstrate BaSn 3 as a superconductor with nontrivial topological electronic structures.
Oscillations of conductance observed in strong magnetic fields are a striking manifestation of the quantum dynamics of charge carriers in solids. The large charge carrier density in typical metals sets the scale of oscillations in both electrical and thermal conductivity, which characterize the Fermi surface. In semimetals, thermal transport at low-charge carrier density is expected to be phonon dominated, yet several experiments observe giant quantum oscillations in thermal transport. This raises the question of whether there is an overarching mechanism leading to sizable oscillations that survives in phonon-dominated semimetals. In this work, we show that such a mechanism exists. It relies on the peculiar phase-space allowed for phonon scattering by electrons when only a few Landau levels are filled. Our measurements on the Dirac semimetal ZrTe 5 support this counterintuitive mechanism through observation of pronounced thermal quantum oscillations, since they occur in similar magnitude and phase in directions parallel and transverse to the magnetic field. Our phase-space argument applies to all low-density semimetals, topological or not, including graphene and bismuth. Our work illustrates that phonon absorption can be leveraged to reveal degrees of freedom through their imprint on longitudinal thermal transport.
When an electron is incident on a superconductor from a metal, it is reflected as a hole in a process called Andreev reflection. If the metal N is sandwiched between two superconductors S in an SNS junction, multiple Andreev reflections (MARs) occur. We have found that, in SNS junctions with high transparency (τ → 1) based on the Dirac semimetal MoTe 2 , the MAR features are observed with exceptional resolution. By tuning the phase difference φ between the bracketing Al superconductors, we establish that the MARs coexist with a Josephson supercurrent I s =I A sin φ. As we vary the junction voltage V, the supercurrent amplitude I A varies in step with the MAR order n, revealing a direct relation between them. Two successive Andreev reflections serve to shuttle a Cooper pair across the junction. If the pair is shuttled coherently, it contributes to I s . The experiment measures the fraction of pairs shuttled coherently vs. V. Surprisingly, superconductivity in MoTe 2 does not affect the MAR features.
The magnetic interactions in the antiferromagnetic (AFM) Dirac semimetal candidate SrMnSb 2 are investigated using ab initio linear response theory and inelastic neutron scattering (INS). Our calculations reveal that the first two nearest in-plane couplings (J 1 and J 2 ) are both AFM in nature, indicating a significant degree of spin frustration, which aligns with experimental observations. The orbital resolution of exchange interactions shows that J 1 and J 2 are dominated by direct and superexchange, respectively. In a broader context, a rigid-band model suggests that electron doping fills the minority spin channel and results in a decrease in the AFM coupling strength for both J 1 and J 2 . To better compare with INS measurements, we calculate the spin-wave spectra within a linear spin-wave theory, utilizing the computed exchange parameters. Although the calculated spin-wave spectra somewhat overestimate the magnon bandwidth, they exhibit overall good agreement with measurements from INS experiments.
Recently, PdTe was identified as a spin-orbit-coupled topological Dirac semimetal and was claimed to exhibit both bulk-nodal and surface-nodeless superconducting gaps. Here we report on ultra-low-temperature thermal-conductivity measurements on PdTe single crystals with T c = 4.5 K to investigate its superconducting gap structure. It is found that the residual linear term κ 0 /T is negligible in zero magnetic field. Furthermore, the field dependence of κ 0 (H)/T exhibits an S-shaped curve. These results suggest that PdTe has multiple nodeless superconducting gaps, which is at odds with the claimed bulk-nodal gap. The reason for the discrepancy is likely that previous angle-resolved photoemission spectroscopy measurements were only performed down to 2 K and cannot observe the smaller nodeless gap. As a result, the fully gapped superconducting state in PdTe is compatible with it being a topological superconductor candidate.
We use first-principles methods to demonstrate that, in ZrTe 5 , a layered van der Waals material like graphite, atomic displacements corresponding to five of the six zone-center A g (symmetry-preserving) phonon modes can drive a topological transition from a strong to a weak topological insulator with a Dirac semimetal state emerging at the transition, giving rise to a Dirac topology surface in the multidimensional space formed by the A g phonon modes. This implies that the topological transition in ZrTe 5 , can be realized with many different settings of external stimuli capable of penetrating through the phonon-space Dirac surface without breaking the crystallographic symmetry. Furthermore, we predict that domains with effective mass of opposite signs can be created by laser pumping and will host Weyl modes of opposite chirality propagating along the domain boundaries. Studying phonon-space topology surfaces provides a new route to understanding and utilizing the exotic physical properties of ZrTe 5 , and related quantum materials.
Platinum ditelluride (PtTe2), a type-II Dirac semimetal, remains semimetallic in ultrathin films down to just two tri-atomic layers (TLs) with a negative gap of -0.36 eV. Further reduction of the film thickness to a single TL induces a Lifshitz electronic transition to a semiconductor with a large positive gap of +0.79 eV. This transition is evidenced by experimental band structure mapping of films prepared by layer-resolved molecular beam epitaxy, and by comparing the data to first-principles calculations using a hybrid functional. The results demonstrate a novel electronic transition at the two-dimensional limit through film thickness control.
Here, we report inelastic neutron scattering measurements of magnetic excitations in YbMnSb 2 , a low-carrier-density Dirac semimetal in which the antiferromagnetic Mn layers are interleaved with Sb layers that host Dirac fermions. We observe a measurable broadening of spin waves, which is consistent with substantial spin-fermion coupling. The spin-wave damping γ in YbMnSb 2 is roughly twice larger compared to that in a sister material, YbMnBi 2 , where an indication of a small damping consistent with a theoretical analysis of the spin-fermion coupling was reported. The interplane interaction between the Mn layers in YbMnSb 2 is also much stronger, suggesting that the interaction mechanism is rooted in the same spin-fermion coupling. Our results establish the systematics of spin-fermion interactions in layered magnetic Dirac materials.