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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Vibrational fingerprints of ferroelectric HfO 2

Hafnia (HfO 2 ) is a promising material for emerging chip applications due to its high-κ dielectric behavior, suitability for negative capacitance heterostructures, scalable ferroelectricity, and silicon compatibility. The lattice dynamics along with phononic properties such as thermal conductivity, contraction, and heat capacity are under-explored, primarily due to the absence of high quality single crystals. Herein, we report the vibrational properties of a series of HfO 2 crystals stabilized with yttrium (chemical formula HfO2: xY, where x = 20, 12, 11, 8, and 0%) and compare our findings with a symmetry analysis and lattice dynamics calculations. We untangle the effects of Y by testing our calculations against the measured Raman and infrared spectra of the cubic, antipolar orthorhombic, and monoclinic phases and then proceed to reveal the signature modes of polar orthorhombic hafnia. This work provides a spectroscopic fingerprint for several different phases of HfO 2 and paves the way for an analysis of mode contributions to high-κ dielectric and ferroelectric properties for chip technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2024

A nanoscale photonic thermal transistor for sub-second heat flow switching

Abstract Control of heat flow is critical for thermal logic devices and thermal management and has been explored theoretically. However, experimental progress on active control of heat flow has been limited. Here, we describe a nanoscale radiative thermal transistor that comprises of a hot source and a cold drain (both are ~250 nm-thick silicon nitride membranes), which are analogous to the source and drain electrodes of a transistor. The source and drain are in close proximity to a vanadium oxide (VO x )-based planar gate electrode, whose dielectric properties can be adjusted by changing its temperature. We demonstrate that when the gate is located close ( < ~1 µm) to the source-drain device and undergoes a metal-insulator transition, the radiative heat transfer between the source and drain can be changed by a factor of three. More importantly, our nanomembrane-based thermal transistor features fast switching times ( ~ 500 ms as opposed to minutes for past three-terminal thermal transistors) due to its small thermal mass. Our experiments are supported by detailed calculations that highlight the mechanism of thermal modulation. We anticipate that the advances reported here will open new opportunities for designing thermal circuits or thermal logic devices for advanced thermal management.

42 ENGINEERING↗
DOE OSTI2021

Damp Heat Degradation of Polycrystalline Silicon Passivated Contacts

After 1000 hours of damp heat exposure at 85% humidity and 85 C, LPCVD n-poly and p-poly are stable for both metallized and non-metallized regions whereas for PECVD, only n-poly is stable; PECVD p-poly suffers significant degradation and defects became more pronounced with exposure time; and PECVD p-poly degrades more than LPCVD p-poly with or without additional dielectric layers (i.e., SiNx + Al2O3 stack).

damp heat degradation↗
DOE OSTI2024

Power Electronics Thermal Management

The 2017 Electrical and Electronics Technical Team Roadmap [1] proposes aggressive research and development targets aimed at improving power electronics technology to enable the mass-market penetration of electric-drive vehicles. Achieving these aggressive targets will require a decrease in cost (year 2025 cost target: $2.70/kW) and an increase in power density (year 2025 power density target: 100 kW/L) as compared with current on-road technology. Replacing traditional silicon device-based components with more efficient and higher-temperature wide-bandgap (WBG) semiconductor device-based components will enable increased power density. However, meeting the power density target will also require innovative thermal management solutions to increase the heat fluxes dissipated and allow for compact electronics packaging.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2022

Single-Phase Dielectric Fluid Thermal Management for Power-Dense Automotive Power Electronics

This paper describes the design and performance of a dielectric fluid cooling concept for automotive power electronics. The concept combines a low-thermal-resistance package (which eliminates metalized ceramic substrates) with a high-performance convective cooling strategy (slot jets impinging on finned surfaces). Modeling was first used to design the cooling system to maximize thermal performance and minimize pumping power. Additionally, a prototype was then fabricated, and experiments were conducted to validate the model predictions using three fluids at various fluid flow rates (16.7 cm 3 /s [1 L/min] to 68.3 cm 3 /s [4.1 L/min]) and inlet temperatures (30C and 70C). The final design was compact (120-cm 3 total volume, including heat exchanger and conceptual power modules) and cooled 12 devices (e.g., silicon carbide). The validated model was then used to predict the junction-to-fluid thermal resistance and pumping power for various conditions, including 40C fluid temperature. The results predict thermal resistance values as low as 19 mm 2 K/W are possible using the dielectric fluid cooling approach. The dielectric fluid cooling system is predicted to provide thermal resistance and pumping power values that are approximately 56% and 90% lower, respectively, compared to an automotive power electronics cooling system.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2022

Microwave Heating-Induced Temperature Gradients in Liquid–Liquid Biphasic Systems

Microwaves (MWs) can enable the electrification and intensification of chemical manufacturing. They have been applied to various unit separations, such as drying, distillation, and extraction, entailing gas–liquid and solid–liquid systems. However, a limited quantitative understanding of MW-heated liquid–liquid biphasic systems related to extraction exists. This work measures the temporal and spatial temperature difference between an aqueous and an organic phase in batch and continuous microfluidic modes. We demonstrate permanent temperature differences between phases over 35 °C and spatiotemporal periodic and quasiperiodic oscillations modulated by the flow patterns. The temperature differences are primarily driven by the faster absorption rate of MW irradiation by the aqueous phase versus the slower heat transfer from the aqueous phase to the organic phase. These are amplified by low specific interfacial area and modifications of the electromagnetic field. We employ a multiphysics model to predict the temperature difference in a batch system. The model is in good agreement with the experiments. We demonstrate a strong effect of input power, dielectric properties of organic solvents, the volume of solvents, and the volume ratio between phases on the temperature difference. A simple analytical model describes the temperature difference and provides design principles. Furthermore, the combined approach offers new insights into the design and optimization of the MW-heated biphasic systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Electrical Gating of the Charge-Density-Wave Phases in Two-Dimensional h -BN/1T-TaS 2 Devices

Here we report on the electrical gating of the chargedensity- wave phases and current in h-BN-capped three-terminal 1T-TaS 2 heterostructure devices. It is demonstrated that the application of a gate bias can shift the source–drain current– voltage hysteresis associated with the transition between the nearly commensurate and incommensurate charge-density-wave phases. The evolution of the hysteresis and the presence of abrupt spikes in the current while sweeping the gate voltage suggest that the effect is electrical rather than self-heating. We attribute the gating to an electric-field effect on the commensurate charge-density-wave domains in the atomic planes near the gate dielectric. The transition between the nearly commensurate and incommensurate charge-density-wave phases can be induced by both the source– drain current and the electrostatic gate. Since the charge-densitywave phases are persistent in 1T-TaS 2 at room temperature, one can envision memory applications of such devices when scaled down to the dimensions of individual commensurate domains and few-atomic plane thicknesses.

2D van der Waals materials↗
DOE OSTI2023

Ion cyclotron heating at high plasma density in Proto-MPEX

The physics of ion cyclotron heating (ICH) relevant to the steady-state linear machine MPEX (Material Plasma Exposure eXperiment) has been explored in its predecessor, short-pulse device: Proto-MPEX. MPEX will utilize fundamental ICH to increase heat flux at the target and produce ion temperatures and velocity distributions with improved fidelity to those found in a tokamak divertor region, in comparison to those produced by substrate biasing. In the experiments on Proto-MPEX described here, bulk ion temperatures up to ~15 eV have been achieved with 20 kW net ICH power at 6.5 MHz, using ICH heating of a deuterium plasma produced by a helicon plasma source. The heat flux at the target has been observed to increase throughout the plasma cross section, including in the core region. Core $T_i$ and target heat flux are observed to scale linearly with injected ICH power. Further, measurements of plasma loading and target heat flux as a function of the magnetic field strength at the antenna, together with modeling of the wave propagation from the antenna to the ion cyclotron resonance using the ANTENA and COMSOL codes with a warm plasma dielectric tensor, indicate that power is coupled to the core plasma via fast wave excitation of a kinetic Alfvén wave.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Ultrafast laser triggered electron emission from ultrananocrystalline diamond pyramid tip cathode

Nitrogen-incorporated ultrananocrystalline diamond [(N)UNCD] pyramid tip cathode has been considered as a next-generation high peak current electron source for dielectric laser accelerators as well as other high peak current particle accelerator applications. In this work, we study non-linear photoemission from an (N)UNCD pyramid tip cathode using an ultrafast laser with the pulse length of 150 fs with the central wavelength of 800 nm in the peak intensity range of 10 9 –10 10 W/cm 2 . We demonstrated that as the incident laser intensity increases, the current emitted from the nano-tip first increases as a power function with an exponent of about 5 and then starts to roll over to an exponent of 3. This roll over is attributed to the Coulomb interaction between electrons emitted from the tip also known as the space charge. We also measured the photoemission electron energy spectra that show electrons with energies as high as ~10 eV. Based on the shape of the electron energy spectra, we conclude that the high-energy electrons are thermally emitted electrons due to ultrafast laser heating at the tip of the (N)UNCD pyramid tip cathode.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces

Abstract Advancing Silicon (Si) technology beyond Moore's law through 3D architectures requires highly efficient heat management methods compatible with foundry processes. While continued increases in transistor density can be achieved through 3D architectures, self‐heating in the upper tiers degrades the performance. Self‐heating is a critical problem for high‐power, high‐frequency, wide bandgap, and ultra‐wide bandgap devices as well. Diamond, known for its exceptional thermal conductivity, offers a viable solution in both these cases. Since thermal boundary resistance (between the channel/junction and diamond plays a crucial role in overall thermal resistance, this study investigates various dielectrics for interface engineering, such as Silicon dioxide (SiO 2 ), amorphous‐ Silicon Carbide (a‐SiC), and Silicon Nitride (SiN x ), to make a phonon bridge at gallium nitride (GaN)‐diamond and Si‐diamond interfaces. The a‐SiC interlayer reduces diamond/GaN (<5 m 2 K per GW) and diamond/Si (<2 m 2 K per GW) thermal boundary resistances by linking low‐ and high‐frequency phonons, boosting phonon transport through the interface. Engineered interfaces enhance heat spreading from the channel/junction and rule out premature failure.

Malakoutian, Mohamadali↗
DOE OSTI2024

Simulating energetic ions and enhanced fusion rates from ion-cyclotron resonance heating with a full-wave/Fokker–Planck model

Reproducing fast-ion enhanced fusion rates from ion-cyclotron resonance heating (ICRH) in tokamaks requires the self-consistent coupling of a full-wave solver and a Fokker–Planck solver, which evolves multiple simultaneously resonant ion species. We introduce a new self-consistent model that iterates the TORIC full-wave solver with the CQL3D Fokker–Planck solver using the integrated plasma simulator (IPS). This model evolves the bounce-averaged ion distribution functions in both parallel and perpendicular velocity-space with a quasilinear radio frequency (RF) diffusion operator valid in the ion finite Larmor radius (FLR) limit and the RF electric fields with the resultant non-Maxwellian FLR dielectric tensor. This produces non-Maxwellian ICRH simulations that are fully self-consistent, fast, and interoperable with integrated modeling frameworks, such as TRANSP/GACODE/IPS-FASTRAN. We demonstrate our model's capabilities by validating it against experimental data in Alcator C-Mod. We then perform the first RF heating simulations of SPARC using self-consistent non-Maxwellian ion distributions to investigate the potential to enhance fusion rates using ion cyclotron resonance heating generated fast ions.

Physics↗
DOE OSTI2026

A Solid State Zwitterionic Plastic Crystal With High Static Dielectric Constant

Solid materials with a high dielectric constant have a wide range of applications in the energy storage field. In this research, an imidazolium-based zwitterion is designed, synthesized, and confirmed to have a plastic crystal phase based on the following experimental and computational evidence: (i) the presence of long-range order with weak intermolecular forces and competing attractive-repulsive interactions along different crystallographic directions; (ii) the observation of more than one endotherm on heating including a solid-solid phase transition at T s-s = −26 °C and melting of the plastic crystal at T m = 72°C; (iii) a low entropy of fusion at melting (2.1 JK −1 mol −1 ); (iv) a strongly anisotropic morphology; (v) relatively fast dynamics originating from short-range degrees of freedom. Furthermore, it exhibits a very high dielectric constant in the plastic crystal solid state (147 at −10°C and 103 at 70°C) due to the rotational degrees of freedom of plastic crystals that arise from weak net intermolecular interactions of zwitterions due to only having two carbons between the anion and cation. This material conveniently remains in the plastic crystal phase within 50 K of ambient temperature. This discovery opens new opportunities in the search for solid-state high dielectric constant materials.

dielectric relaxation↗
DOE OSTI2023

Extremely Thin Perfect Absorber by Generalized Multipole Bianisotropic Effect

Symmetry breaking plays a crucial role in understanding the fundamental physics underlying numerous physical phenomena, including the electromagnetic response in resonators, giving rise to intriguing effects such as directional light scattering, supercavity lasing, and topologically protected states. Here, this work demonstrates that adding a small fraction of lossy metal (as low as 1 × 10 −6 in volume) to a lossless dielectric resonator breaks inversion symmetry (IS), thereby lifting its degeneracy, leading to a strong bianisotropic response. In the case of the metasurface composed of such resonators, this effect leads to unidirectional perfect absorption while maintaining nearly perfect reflection from the opposite direction. It has developed more general Onsager‐Casimir relations for the polarizabilities of particle arrays, taking into account the contributions of quadrupoles, which shows that bianisotropy is not solely due to dipoles, but also involves high‐order multipoles. The experimental validation demonstrates an extremely thin terahertz‐perfect absorber with a wavelength‐to‐thickness ratio of up to 25,000, where the material thickness is only 2% of the theoretical minimum thickness dictated by the fundamental limit. The findings can pave a new route to design devices for applications involving optical‐to‐heat conversion processes.

36 MATERIALS SCIENCE↗
DOE OSTI2021

PISCES-RF: a liquid-cooled high-power steady-state helicon plasma device

Radio-frequency (RF) driven helicon plasma sources can produce relatively high-density plasmas (n > 1019 m -3 ) at relatively moderate powers (<2 kW) in argon. However, to produce similar high-density plasmas for fusion relevant gases such as hydrogen (H), deuterium (D) and helium (He), much higher RF powers are needed. For very high RF powers, thermal issues of the RF-transparent dielectric window, used in the RF source design, limit the plasma operation timescales. To mitigate this constraint, we have designed, built and tested a novel helicon plasma source assembly with a fully liquid-cooled RF-transparent window which allows steady state operations at high power (up to 20 kW) and successfully produces high-density plasma with both argon and H. Deionized (DI) water, flowing between two concentric dielectric RF windows, is used as the coolant. We show that a full azimuthal blanket of DI water does not prevent high-density plasma production. From calorimetry on the DI water, we measure the net heat removed by the coolant at steady state conditions. Using infra-red imaging, we calculate the constant plasma heat deposition and measure the final steady state temperature distribution patterns on the inner surface of the ceramic layer. The heat deposition pattern follows the helical shape of the antenna. We also show the consistency between the heat absorbed by the DI water, as measured by calorimetry, and the total heat due to the combined effect of the plasma heating and the absorbed RF. These results are being used to answer critical engineering questions for the 200 kW RF device materials plasma exposure experiment being designed at the Oak Ridge National Laboratory as a next generation plasma material interaction device.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Precision Measurement of the Microwave Dielectric Loss of Sapphire in the Quantum Regime with Parts-per-Billion Sensitivity

Dielectric loss is known to limit state-of-the-art superconducting qubit lifetimes. Recent experiments imply upper bounds on bulk dielectric loss tangents on the order of 100 parts per billion but because these inferences are drawn from fully fabricated devices with many loss channels, these experiments do not definitely implicate or exonerate the dielectric. To resolve this ambiguity, we devise a measurement method capable of separating and resolving bulk dielectric loss with a sensitivity at the level of 5 ×10 –9 . The method, which we call the dielectric dipper, involves the in situ insertion of a dielectric sample into a high-quality microwave cavity mode. Smoothly varying the participation of the sample in the cavity mode enables a differential measurement of the dielectric loss tangent of the sample. The dielectric dipper can probe the low-power behavior of dielectrics at cryogenic temperatures and does so without the need for any lithographic process, enabling controlled comparisons of substrate materials and processing techniques. We demonstrate the method with measurements of sapphire grown by edge-defined film-fed growth (EFG) in comparison to high-grade sapphire grown by the heat-exchanger method (HEMEX). For EFG sapphire, we infer a bulk loss tangent of 63⁢(8) ×10 –9 and a substrate-air interface loss tangent of 15⁢(3) ×10 –4 (assuming a sample surface thickness of 3 nm). For a typical transmon, this bulk loss tangent would limit device quality factors to Q ≲20 ×10 6 , suggesting that bulk loss is likely the dominant loss mechanism in the longest-lived transmons on sapphire. We also demonstrate this method on HEMEX sapphire and bound its bulk loss tangent to be less than 19⁢(6) ×10 –9 . As this bound is about 3 times smaller than the bulk loss tangent of EFG sapphire, the use of HEMEX sapphire as a substrate would lift the bulk dielectric coherence limit of a typical transmon qubit to several milliseconds.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Reconfigurable plasma-dielectric hybrid photonic crystal as a platform for electromagnetic wave manipulation and computing

The introduction of 3D printing has enabled fabrication of photonic crystal devices with complex crystal structures that would be challenging to construct using other fabrication methods. In this paper, we construct and characterize a photonic crystal consisting of two 4 x 8 x 8 cubic lattices composed of spherical silicon nitride elements straddling a layer of 8 plasma discharge tubes, creating a 3D hybrid plasma photonic crystal device. Integrating under-dense gaseous plasma elements provides a unique coupling dynamic between the dielectric spheres and the cylindrical plasma discharges, creating a monolithic hybrid photonic crystal with solid state and reconfigurable elements. The device has resonant modes that have attenuation peaks that are either switchable, tunable in amplitude, or tunable in frequency with variations in plasma density. The response of these bands seen with varying plasma density is confirmed through simulations when effects due to the heating of the photonic crystal from the gaseous plasma elements are accounted for in the experiments. We discuss how this reconfigurable device may be used and expanded upon for applications in photonic artificial neural networks and optical computing systems.

3D printing↗
DOE OSTI2022

Maximal absorption in ultrathin TiN films for microbolometer applications

Ultrathin light absorbers present a viable route toward improving the specific detectivity and response time of microbolometers. However, for an ultrathin film to absorb light efficiently, the dielectric function of the film and its thickness must satisfy strict requirements. Here we experimentally demonstrate an average absorptance of 48% ± 2.5% in the 8–13 μm (769–1250 cm -1 ) spectral range for 10 nm thick titanium nitride (TiN), a value bordering on the 50% fundamental absorptance limit for a suspended thin film. The heat capacity per unit area of this absorber is only 1.2 × 10 -6 J/K/cm 2 , which is beneficial for improving the response time of a microfabricated bolometer. We also show that a sufficient condition for reaching maximal absorption in an ultrathin film is that ε" $\gg$ |ε'|.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Filamentary surface plasma discharge flow length and time scales

Nanosecond surface dielectric barrier discharges (ns-SDBDs) are a class of plasma actuators that utilize a high-voltage pulse of nanosecond duration between two surface-mounted electrodes to create an electrical breakdown of air, along with rapid heating. These actuators usually produce multiple filaments when operated at high pulse frequencies, and the rapid heating leads to the formation of shock waves and complex flow fields. In this work we replicate a single filament of the ns-SDBDs and characterize the induced flow using velocity measurements from particle image velocimetry and density measurements from background-oriented schlieren. The discharge is produced by a high voltage electrical pulse between two copper electrodes on an acrylic base. A hot gas kernel characterizes the flow field formed close to the electrodes that expands and cools over time and a vortex ring that propagates away from the surface while entraining cold ambient fluid. The gas density deficit inside the kernel displays a power-law decay over time. Based on the observations, we develop a simplified theoretical model based on vortex-driven cooling and perform a scaling analysis to obtain the induced flow length and time scales. The results show that the cooling process's time scales correspond to a circulation-based time scale of the vortex ring, and the length scale of the kernel corresponds to the vortex ring radius. Furthermore, these findings can guide the choice of optimal filament spacing and pulse frequencies in the design, deployment, and operation of ns-SDBDs for flow control.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗