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DOE OSTI2023

Bipolar transistor structure with collector on polycrystalline isolation layer and methods to form same

Embodiments of the disclosure provide a bipolar transistor structure with a collector on a polycrystalline isolation layer. A polycrystalline isolation layer may be on a substrate, and a collector layer may be on the polycrystalline isolation layer. The collector layer has a first doping type and includes a polycrystalline semiconductor. A base layer is on the collector layer and has a second doping type opposite the first doping type. An emitter layer is on the base layer and has the first doping type. A material composition of the doped collector region is different from a material composition of the base layer.

Holt, Judson R.↗

DOE OSTI2021

Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO 2

Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials' limitations with regard to their doping asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar doping of UWBG materials will enable a wider range of applications in power electronics as well as deep-UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved doping and transport properties. As an example, we discuss the case of rutile GeO2 (r-GeO 2 ), a water-insoluble GeO 2 polytype, which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than β-Ga 2 O 3 . The subsequent realization of single-crystalline r-GeO 2 thin films by molecular beam epitaxy provides the opportunity to realize r-GeO 2 for electronic applications. Future efforts toward the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled doping in high-quality thin films with lower dislocation densities and optimized film properties.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Serrated flow in $\mathrm{NaI:Tl}$ scintillator crystals

We report the serrated-flow behavior is an important phenomenon that unveils material-deformation mechanisms, as reported for various kinds of materials. NaI doped with Tl (NaI:Tl) is unique among scintillation materials in that the structure contains glide planes that are linked to serration behavior. In the present work, single crystals of NaI:Tl were subjected to room-temperature compression experiments at different strain rates. The serrated flow was observed, and complexity and multifractal analyses were performed to analyze the serration behavior. The findings revealed that the strain rate had a pronounced effect on the complexity and multifractality of the serrated flow, similar to what has been found in other alloy systems. The results also indicate that there may be a strong link between the complexity of the serrated flow behavior and the heterogeneity of the underlying dynamics. It is expected that the present work could be a step toward a better understanding of the deformation behavior and forgeability of NaI:Tl single crystals.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Stabilized Lithium, Manganese-Rich Layered Cathode Materials Enabled by Integrating Co-Doping and Nanocoating

While lithium, manganese-rich (LMR) layered oxide cathode materials offer high energy density (>900 Wh kg –1 ) and low cost, LMR is susceptible to continuous capacity and voltage decay from the oxygen migration and side reaction with aqueous electrolyte at high voltage. Herein, the integration of Na/F co-doping (CD) and AlF 3 coating on LMR is achieved without the need of complex atomic layer deposition. Akin to pristine and CD samples, CD with 1 wt % AlF 3 (CD-1.0 wt %) shows excellent electrochemical performance with the capacity and voltage retentions of 93 and 91% after 150 cycles at 0.5C, respectively, and increased ionic conductivity. Spectroscopic analysis indicates that the coating mainly influences the Co distribution, where Co is enriched on the surface, and partial diffusion of Al 3+ ions toward the bulk, leading to a slight change of transition-metal (TM) valence states at the nanometer scale and the formation of a stable Li x (CoAl)O y phase. Post-cycling analysis reveals that CD-1.0 wt % can alleviate the formation of rock-salt structure and Mn dissolution. Besides, little to no metal segregation is detected for the cycled CD-1.0 wt % sample. This finding presents the first instance to apply co-doping and AlF 3 coating as a new strategy to enhance the structural homogeneity and takes another step toward their commercial viability.

25 ENERGY STORAGE↗

DOE OSTI2022

High temperature thick film sensor development based on doped lanthanum chromites refractory semiconductors materials

High temperature advanced sensing materials have generated high demand due the high accuracy temperature measurements requirements for process optimization, controlling and sensing. Some technological applications of harsh conditions sensing include monitoring tiles of space shuttles, rotating bearings in aircraft engines, turbines, jet engines dynamics and chemical reactors. High temperature conditions limit the sensing strategies, where typically traditional metal thermocouples are unstable, and the sensing options are limited to optical spectroscopy methods. Recently, refractory semiconductors thick- and thin-film thermocouples have been developed and, in many cases, preferred over conventional metallic thermocouples due their spatial resolution, and capability of direct deposition on any surface. Rare earth chromites ceramics materials, exhibit some properties of interest for high temperature sensing technologies development, such as: high microstructure and sintering stability, excellent conductive behavior at high temperatures, and matching thermal expansion coefficients relative to other conductors and refractory ceramics. In this work, high performance ultra-high temperature thermocouples using p-type and n-type doped lanthanum chromites materials were fabricated and tested at temperatures up to 1500 o C. Thermoelectric voltage, Seebeck Coefficients were established for all devices, evidencing high stability and performance in prolongated operational time and harsh conditions.

20 FOSSIL-FUELED POWER PLANTS↗

DOE OSTI2020

In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks

Thermoelectric devices possess enormous potential to reshape the global energy landscape by converting waste heat into electricity, yet their commercial implementation has been limited by their high cost to output power ratio. No single “champion” thermoelectric material exists due to a broad range of material-dependent thermal and electrical property optimization challenges. While the advent of nanostructuring provided a general design paradigm for reducing material thermal conductivities, there exists no analogous strategy for homogeneous, precise doping of materials. Here, we demonstrate a nanoscale interface-engineering approach that harnesses the large chemically accessible surface areas of nanomaterials to yield massive, finely-controlled, and stable changes in the Seebeck coefficient, switching a poor nonconventional p- type thermoelectric material, tellurium, into a robust n -type material exhibiting stable properties over months of testing. These remodeled, n -type nanowires display extremely high power factors (~500 µW m -1 K -2 ) that are orders of magnitude higher than their bulk p -type counterparts.

42 ENGINEERING↗

DOE OSTI2020

Improved lithium storage capacity and high rate capability of nitrogen-doped graphite-like electrode materials prepared from thermal pyrolysis of graphene quantum dots

Adopting a solid-phase microwave-assisted technique followed by thermal pyrolysis of N-functionalized graphene quantum dots, novel nitrogen-doped graphite-like (NGL) electrode materials were synthesized in this work and served as the anode for Li-ion batteries. The NGL anode demonstrated reversible capacity of 530 mAh g -1 at 0.1C, superior rate capability at high C rate operation (420 mAh g -1 at 5C), remarkable initial coulombic efficiency (>95.7%), and excellent cyclic stability along with high efficiency (>99.1%) during entire cycling. The NGL anode nanostructure enables improved lithium ion mobility and reversible Li + storage during cycling. The analysis of the Ragone plots revealed that the specific energy of NGL anode reaches to ca. 840 Wh kg -1 at the power density of 4200 W kg -1 . The diffusion coefficient of Li ions was measured as 1.69 × 10 -9 cm 2 s -1 for the NGL anode material, substantially improving over commonly used graphite electrodes (15–26 times higher Li + diffusivity). The high-rate cyclability as well as the cyclic stability of the NGL anodes were also confirmed via long-term cycling of full pouch cells assembled with ternary cathode and NGL anode. The robust design of the NGL anode materials introduced in this work, paves the way for designing next-generation lithium-ion batteries operating at ultra-high C rates.

25 ENERGY STORAGE↗

DOE OSTI2024

Enhanced CO 2 Adsorption Capacity in Highly Porous Carbon Materials Derived from Melamine-Formaldehyde Resin

Here, the present study explores the synthesis of N-doped carbon materials with large surface porosity using commercial melamine-formaldehyde resin as the precursor and KOH as the activator. The resin was carbonized first and then activated by KOH with varying KOH amount and activation temperature. Notably, the as-obtained sorbents display advanced porosity with the highest surface area and pore volume of 1591 m 2 /g and 0.74 cm 3 /g, respectively, along with high N content ranging from 6.43 to 18.34 wt %. Remarkably, maximum CO 2 capture amounts of 5.42 and 3.52 mmol/g were accomplished at 0 and 25 degrees C, 1 bar for as-synthesized carbons. Systematic studies point out that narrow microporosity is the major factor determining the CO 2 uptake of these carbons under ambient pressure. Furthermore, these sorbents display notable CO 2 selectivity, rapid adsorption kinetics, moderate heat of adsorption, substantial dynamic CO 2 capture capacity, and stable recyclability. These results underscore the potential of melamine-formaldehyde resin-derived N-doped porous carbon as an efficient and versatile adsorbent for CO 2 capture.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Effective Selective Area Doping for GaN Vertical Power Transistors Enabled by Innovative Materials Engineering

GaN vertical power transistors have emerged as promising candidates for future high efficiency high power electronic applications, with the potential to outperform conventional GaN lateral power devices in terms of power, breakdown, and avalanche characteristics. However, the development of current GaN vertical power transistors is seriously hindered by the poor materials performance of selective area doped p-n junctions. A mechanistic understanding of these fundamental materials issues is essential in order to achieve high performance selective area doped p-n junctions and consequently to advance the GaN vertical power transistor technology. To address this challenge, we carried out a comprehensive research program that advance fundamental knowledge in the selective area doping for GaN materials, and which will lead to the development of high performance GaN vertical power transistors. First, we developed innovative fabrication processes, including novel surface etching, surface passivation, and metalorganic chemical vapor deposition (MOCVD) growth, which provided enhanced opportunities for solving the unique challenges of selective area doping in GaN materials. Second, we performed a fundamental materials study using powerful characterization methods including transmission electron microscopy (TEM), ultraviolet (UV-), x-ray and angle-resolved photoelectron spectroscopy (UPS/XPS/ARPES), electron holography, and cathodoluminescence (CL); Third, we investigated several related issues, including Mg incorporation, polarization effects in carrier transport, and non-ideal material effects, which have rarely been explored so far. At the end of this project, we successfully demonstrated (1) fundamental understanding of selective area etching, regrowth, and doping of GaN, and associated knowledge on defects, interface, and breakdown properties. (2) Effective etch and regrowth processing recipes to achieve etch/regrowth GaN p-n diodes with very low leakage of 3.5 nA at 600 V, which meets the ARPA-E target. (2) High performance vertical GaN p-n didoes and vertical junction termination extension (JTE) devices with breakdown voltage of ~ 2 kV, and breakdown electric field of ~ 3.5 MV/cm, which are close to the performance limit of GaN. The successful outcome has resulted in new fundamental understandings in the selective area doping and regrowth process for GaN, which will lead to groundbreaking GaN vertical transistors for high performance next generation power electronics.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2023

Enhancing Oxygen Stability in Low-Cobalt Layered Oxide Cathode Materials by Three-Dimensional Targeted Doping

In this project, we propose to develop a new concept and a generic platform that can lead to the greatly enhanced stabilization of all high-energy cathode materials, and in particular high-nickel (Ni) and low-cobalt (Co) oxides. The new concept is a 3D doping technology that hierarchically combines surface and bulk doping. We will use surface doping to stabilize the surface of primary particles and also introduce dopants in the bulk to further enhance oxygen stability, conductivity, and structural stability in low-Co oxides under high voltage and deep discharging operating conditions. This new concept not only will deliver a low-cost, high-energy cathode but also will provide a generic method that can stabilize all high-energy cathodes. The proposed novel 3D doping approach is poised to resolve some longstanding challenges in fundamental doping effects on battery materials as well as to reduce Li-ion batteries’ cost and improve their safety, energy density, and lifetime. To tackle this problem, we have formed a highly complementary multi-university/national labs/industry team to enable a doping-central and systematic investigation of low-Co materials and create a knowledge base for many electrode materials to be used in advanced electric vehicles. The successful execution of the proposed project relies on five components that can be carried out by the complementary team members: (1) a theoretical investigation of the surface and bulk stabilizing dopants (Persson), (2) a precise synthesis of materials with targeted doping (Lin and Xin), (3) development of electrolytes for high-Ni low-Co oxides (Xu), (4) multi-scale characterization of the structures and their interfaces by scanning transmission electron microscopy (SEM) and synchrotron X-ray imaging and spectroscopy tools (Xin and Lin), and (5) pouch cell-level integration (Fan). The UCI-led project will enable a doping-central and systematic investigation of low-Co materials and create a knowledge base for many electrode materials to be used in advanced electric vehicles.

25 ENERGY STORAGE↗

DOE OSTI2023

Photonuclear transmutation doping in gallium-based semiconductor materials

The present invention relates to various high quality n-type and p-type doped gallium-based semiconductor materials, electronic components incorporating these materials, and processes of producing these materials. In particular, The present invention relates processes to achieve high quality, uniform doping of a whole wafer or a thin layer of gallium-based semiconductor materials for various applications such as a vertical power transistor or diode.

Kwon, Jae Wan↗

DOE OSTI2022

Photoconductive charge trapping apparatus

Techniques, systems, and devices are disclosed for implementing a photoconductive device performing bulk conduction. In one exemplary aspect, a photoconductive device is disclosed. The device includes a light source configured to emit light; a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant that forms a mid-gap state within a bandgap of the crystalline material to control a recombination time of the crystalline material; a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first and the second electrodes are configured to establish an electric field across the crystalline material, and the crystalline material is configured to exhibit a substantially linear transconductance in response to receiving the light.

Sampayan, Stephen↗

DOE OSTI2020

Final Technical Report for DE-FG02-86ER45268

This work addresses several key issues for understanding the unusual superconductivity in IBS, already shown to be technologically useful materials. 1a). Are reactive gasses like fluorine, chlorine, or water vapor behaving simply as electron donors to cause the superconductivity (at T conset =21 K) in undoped IBS like BaFe 2 As 2 ? 1b). Does exposure to fluorine increase T c in electron-doped IBS materials that are underdoped, e. g. Ba(Fe 0.96 Co 0.04 ) 2 As 2 ? 1c). Can fluorine as a reactive electron-donor, with its relatively greater ease of introduction into the lattice, be used as a rapid tool to search for superconductivity in new materials under investigation? Method of investigation: Using electron probe microanalysis, x-ray photoemission spectroscopy, and dynamical mean field theory calculations, we found that fluorine substitutes for As in the BaFe 2 As 2 lattice, and should therefore behave as an electron donor. We will F-dope Ba(Fe 0.96 Co 0.04 ) 2 As 2 and several new compounds under investigation for superconductivity upon doping to determine fluorine’s effect. Potential impact: If – like for fluorine - a brief exposure to hydrogen indeed causes superconductivity to a depth of 10 microns, this technique could be useful in creating long lengths of superconducting tape without the chemical aggressiveness of fluorine. Using the F ion, which substitutes for As - away from the Fe planes, in underdoped IBS like Ba(Fe 0.96 Co 0.04 ) 2 As 2 may form optimally doped IBS with less impurity scattering of the superconducting Fe 3d electrons resulting in improved superconducting properties. Another potential impact is the speed of checking for superconductivity in new materials under investigation for superconductivity upon doping. 2. What are the effects of Be substitution into IBS, beginning with FeSe and its derivatives (FeSe 1-x S x and FeSe 1-x Te x ) and BaFe 2-x Co x As 2 ? Method of investigation: We recently succeeded in adding Be to the FeSe lattice and found, surprisingly, a factor of four improvement of the low temperature residual resistivity ratio, consistent with improved electronic ordering. Using single crystal x-ray diffraction and x-ray dispersive spectroscopy, determine the concentration and location of the Be dopant. Using resistivity, determine if there is improvement in the residual resistivity achieved by Be doping in the FeSe derivatives (using AlCl 3 :KCl flux growth) and Co-doped BaFe 2 As 2 (using self-flux single crystal growth). Measuring resistivity under strain, determine the changes of the nematic susceptibility at the structural ordering transition causes by the increase in electronic order caused by Be doping in FeSe. Potential impact: Further understanding of IBS, including FeSe which - under physical pressure - has a T c increase to 40 K and -prepared as a monolayer - has a T c reported to be over 100 K. 3. In collaboration, prepare light atom compounds involving Be and look for high pressure-induced superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Efficient electrosynthesis of hydrogen peroxide in neutral media using boron and nitrogen doped carbon catalysts

The two-electron electrocatalytic oxygen reduction reaction (2e - ORR) is a promising, sustainable, and efficient route for on-site and small-scale production of hydrogen peroxide (H 2 O 2 ) compared to the conventional anthraquinone oxidation process. Although heteroatom doped carbon materials are widely studied for the 2e - ORR, few studies have been conducted on the synergistic relationship between multiple doping elements on H 2 O 2 performance. Moreover, there is a lack of efficient and stable catalysts for H 2 O 2 electrosynthesis in neutral media. In this work, a series of boron and nitrogen co-doped carbon (BNC) catalysts are synthesized and assessed for the 2e - ORR in neutral pH electrolyte. Through X-ray photoelectron and absorption spectroscopy analyses, we characterize B–N–C moieties and correlate them with H 2 O 2 production performance. In rotating ring disk electrode measurements, BNC catalysts pyrolyzed at 900 °C exhibit H 2 O 2 Faradaic efficiency of ~70% and demonstrate excellent long-term stability over 10 hours of continuous operation. In a three-electrode flow cell, this catalyst achieves ~78% H 2 O 2 Faradaic efficiency and 0.9 mmol cm -2 h -1 productivity at 0.20 V vs. RHE, surpassing most previously reported carbon-based catalysts in neutral media. This work contributes fundamental insights into the role of boron and nitrogen heteroatom dopants toward 2e - ORR and highlights the practical viability of these catalysts for real world applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2023

Higher-order nodal hinge states in doped superconducting topological insulator

Doped strong topological insulators are one of the most promising candidates to realize a fully gapped three-dimensional topological superconductor (TSC). In this Letter, we revisit this system and reveal a possibility for higher-order topology which was previously missed. We find that over a finite range of doping, the Fu-Berg superconducting pairing can give rise to both Majorana surface states and nodal hinge states. Interestingly, we observe the coexistence of surface and hinge modes in the superconducting state only when there are both bulk and surface Fermi surfaces in the normal state. Furthermore, we find that the hinge modes can appear for normal states consisting of doped strong or weak topological insulators. In summary, this work may allow for the discovery of superconducting hinge modes in a well explored class of materials, i.e., doped strong or weak topological insulators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2023

Magnetic states of graphene proximitized Kitaev materials

Single-layer α-ruthenium trichloride (α–RuCl 3 ) has been proposed as a potential quantum spin liquid. Graphene/RuCl 3 heterobilayers have been extensively studied with a focus on the large interlayer electron transfer that dopes both materials. Here we examine the interplay between the competing magnetic state of RuCl 3 layer and graphene electronic properties. We perform self-consistent Hartree-Fock calculations on a Hubbard-Kanamori model of the 4d 5 t 2g electrons of α–RuCl 3 and confirm that out-of-plane ferromagnetic and zigzag antiferromagnetic states are energetically competitive. We show that the influence of hybridization between graphene and RuCl 3 bands is strongly sensitive to the magnetic configuration of RuCl 3 and the relative orientations of the two layers. We argue that strong hybridization leads to graphene magnetoresistance and that it may tilt the balance between closely competing magnetic states. Furthermore, Our analysis can be applied to any van der Waals heterobilayer system with weak interlayer hybridization and allows for arbitrary lattice constant mismatch and relative orientation.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Intercalation as a versatile tool for fabrication, property tuning, and phase transitions in 2D materials

Recent advances in two-dimensional (2D) materials have led to the renewed interest in intercalation as a powerful fabrication and processing tool. Intercalation is an effective method of modifying the interlayer interactions, doping 2D materials, modifying their electronic structure or even converting them into starkly different new structures or phases. Herein, we discuss different methods of intercalation and provide a comprehensive review of various roles and applications of intercalation in next-generation energy storage, optoelectronics, thermoelectrics, catalysis, etc. The recent progress in intercalation effects on crystal structure and structural phase transitions, including the emergence of quantum phases are also reviewed.

2D materials↗

DOE OSTI2021

Anomalously strong near-neighbor attraction in doped 1D cuprate chains

In the cuprates, one-dimensional (1D) chain compounds provide a distinctive opportunity to understand the microscopic physics, owing to the availability of reliable theories. However, progress has been limited by the challenge of controllably doping these materials. We report the synthesis and spectroscopic analysis of the 1D cuprate Ba 2-x Sr x CuO 3+δ over a wide range of hole doping. Our angle-resolved photoemission experiments reveal the doping evolution of the holon and spinon branches. We identify a prominent folding branch whose intensity fails to match predictions of the simple Hubbard model. An additional strong near-neighbor attraction, which may arise from coupling to phonons, quantitatively explains experiments for all accessible doping levels. Furthermore, considering structural and quantum chemistry similarities among cuprates, this attraction may play a similarly important role in high-temperature cuprate superconductors.

1D Chain↗