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Oxidation‐Driven Enhancement of Intrinsic Properties in MXene Electrodes for High‐Performance Flexible Energy Storage

Abstract MXenes, a novel class of 2D materials, exhibit great potential for energy storage due to their unique layered structure and excellent electrical conductivity. However, improving the intrinsic electrochemical storage capacity of MXenes remains a significant challenge, often requiring the incorporation of other Faradaic materials. Oxidation, in particular, poses a key issue that impacts the capacity of MXene devices. In this study, controlled oxidation is employed to create nanoscale holes within MXene, transforming them into holey MXene (H‐MXene) nanosheets. These porous structures shorten ion transport distances and increase ion transport pathways, thereby significantly enhancing the electrochemical storage capacity of MXenes. The resulting H‐MXene micro‐supercapacitors (MSCs) demonstrate exceptional performance, achieving an aerial capacitance 2.5 times that of unmodified MXene electrodes, along with excellent cycling stability, retaining 91.7% of their capacitance after 10 000 cycles. Additionally, a flexible integrated system combining energy storage and sensing functionalities is developed, showcasing its scalability in self‐powered sensing applications. The incorporation of self‐healing polyurethane (PU) enables the device to retain 90% of its storage capacity after undergoing self‐healing. This study presents a novel approach for developing high‐performance MXene‐based energy storage devices and provides valuable insights into efficient ion transport and storage in 2D materials.

Cheng, Yongfa [Department of Materials Science and↗

Material‐Driven Neuronal Oscillators and Filters via Active Reactance in CC‐NDR and VC‐NDR Electro‐Thermal Memristors

The continued scaling of artificial intelligence and telecommunications hardware is increasingly constrained by the power, bandwidth, and area limitations of transistor-based circuits. Neuromorphic processor units, analog oscillators, and active inductors and capacitors rely on complex multi-transistor architectures restricting material choices and incurring energy and footprint overhead. Here, we show that active reactance in electro-thermal memristors provides an intrinsic, material driven route to neuronal oscillator dynamics and signal processing. Using a physics-based compact modeling framework, we bridge negative differential resistance (NDR) and bias-tunable reactance, which underlies spiking dynamics in electro-thermal memristors. Memristors with negative temperature coefficients of resistance (TCR) manifest current-controlled (CC-) NDR and act as active inductors, thus generating spiking above a critical circuit capacitance; whereas memristors with positive TCR manifest voltage-controlled (VC-) NDR and active capacitance, leading to spiking above a critical inductance. By creating a compact model for La 0.7 Ca 0.3 MnO 3 as a representative VC-NDR material and comparing it with LaCoO 3 manifesting CC-NDR, we explain the physical origins of their distinct current-voltage characteristics, reactive phase shifts and consequent spiking behaviors. Finally, we demonstrate tunable filtering enabled by the active reactance of electro-thermal memristors, establishing them as a compact hardware platform for neuronal oscillator functionality and integrated filtering beyond conventional CMOS.

active reactance↗

Wastepaper-derived porous carbon supported cobalt nanocomposites for all solid-state flexible supercapacitor

The conversion of wastepaper into high-value carbon materials has gained significant attention as a sustainable strategy for energy storage applications. Owing to its low cost, abundance, and intrinsic fibrous structure, wastepaper serves as an attractive precursor for carbon-based electrode materials. In this work, a novel electrode comprising cobalt nanoparticles and Co 3 O 4 embedded in wastepaper-derived porous carbon has been developed for use in a flexible all-solid-state asymmetric supercapacitor. The integration of cobalt nanoparticles and Co 3 O 4 introduces redox-active centres, which enhance the electrochemical activity of the carbon framework. Mean while, the interconnected porous and conductive carbon network enables rapid ion diffusion and efficient electron transport, synergistically improving the overall electrochemical performance. It delivers a high specific capacitance of 61.5 Fg -1 , a power density of 5143 W kg -1 , and an energy density of 9 Wh kg -1 at a current density of 2.5 A/ g. Furthermore, the device maintains outstanding cycling stability, retaining 82.86 % of its capacitance after 10,000 charge-discharge cycles. Practical applicability is confirmed through its ability to power

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Exceptional NH 3 Detection by Cu(cyhdc) MOF Sensor Due to H 2 O Coadsorption

Metal–organic framework (MOF)-based electrical impedance sensors are a growing class of sensors that show utility in the detection of environmentally toxic gases. Detection of trace NH 3 has been particularly difficult to design due to the low electrical response of NH 3 . However, this has been circumvented by judiciously selecting a MOF that has enhanced electrical response to NH 3 due to coadsorption with predominant atmospheric gases such as water. Herein, an MOF Cu(cyhdc) based sensor has been successfully demonstrated for the enhanced detection of environmentally toxic NH 3 gas. The sensor shows a change in impedance when it is exposed to 5 ppm of NH 3 . At 20 °C, >30% relative humidity (RH) is necessary to elicit a change, with the response increasing with RH and reaching 3170× at 92% RH, producing the largest published response to NH 3 for a MOF direct electrical sensor. In the absence of water, no change is observed toward 5 ppm of NH 3 over 20–50 °C. Here, this electrical response is largely driven by huge decreases in the imaginary component of the impedance, attributed to increased capacitance at the surface of the MOF crystallites upon NH 3 and H 2 O coadsorption. Complementary structural and microstructural characterization proves that the Cu(cyhdc) crystalline structure and morphology remain intact under trace NH 3 and/or H 2 O adsorption. Despite extremely low NH 3 , loadings seen in TGA, XPS, and FT-IR confirm NH 3 and H 2 O adsorption, and changes to the metal-carboxylate IR peak positions are observed upon NH 3 adsorption. Concentrated primarily at the outer surfaces of the MOF crystallites, this NH 3 and H 2 O coadsorption effectively increases the surface capacitance across the Cu(cyhdc) powder and enables direct electrical detection of trace NH 3 . Together, these results demonstrate how coadsorption of specific molecules (H 2 O) can be used to enable the electrical detection of trace toxic gases that would otherwise not have produced a MOF sensor response.

ammonia↗

2D in-Plane Ordered MXene Nanosheets Derived from (Mo 2/3 Er 1/3 ) 2 AlC Rare-Earth i-MAX for Energy Storage Applications

MXenes have become one of the most versatile families of two-dimensional (2D) materials due to their high conductivity, hydrophilicity, and remarkable electrochemical performance. This has stimulated intense efforts to design and synthesize MXenes, including structurally unique in-plane ordered 2D MXenes called i-MXenes. Here, we have synthesized the quaternary rare earth (RE)-based i-MAX phase (Mo 2/3 Er 1/3 ) 2 AlC using an arc melting method, and the corresponding 2D i-MXene was then obtained through a LiF/HCl soft etching process. Literature studies have shown that Al and the RE element are etched out during the etching process, leading to the formation of pure vacancy-ordered Mo1.33C 2D i-MXene. However, our investigation reveals that upon exposure to a fluorine solution, the i-MAX phase forms RE fluoride impurities, which are challenging to remove through HCl−DI water washing and persist in the final product, resulting in impure Mo 1.33 C@Er i-MXene. These results were confirmed by various characterizations such as X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, and scanning transmission electron microscopy. Although the Mo 1.33 C@Er electrode showed a 24-fold increase in specific capacitance compared to its parent i-MAX phase, it still exhibited a high charge-transfer resistance arising from the insulating nature of RE fluoride byproducts, which adversely influence the overall capacitance behavior of the synthesized 2D Mo 1.33 C@Er i-MXenes. This study contributes to identifying pathways for the preparation of pure 2D i-MXenes from RE-based i-MAX phases and developing improved synthesis methods. With additional process optimization, the 2D i-MXene holds a strong potential for electrochemical energy storage applications. Additionally, the electronic structures of Mo 1.33 C were theoretically studied using first-principles density functional theory calculations, which revealed that pristine Mo 1.33 C is metallic, and this metallic nature is preserved even with −O, −F, and mixed functionalization.

chemical structure↗

Etching-Chemistry-Driven Ruthenium Doping on Ti 3 C 2 T x MXene for Optimizing Electrochemical Performance

We demonstrate that the etching chemistry used during MXene synthesis from Ti 3 AlC 2 MAX phase significantly influences surface functionalization and structural vacancies, which in turn affect ruthenium (Ru) ion interactions. Using hydrofluoric acid (HF) and ammonium bifluoride (NH 4 HF 2 ) as etchants, we obtained MXene surfaces with distinct functional groups and Ti vacancies that impact Ru ion interactions and electrochemical performance. Both MXene variants (labeled MX(H) and MX(N), respectively) exhibited negative zeta potentials in their pristine state, but upon the addition of Ru the zeta potential for MX(H) reached 12.9 mV while that for MX(N) remained negative at −6.4 mV. This adsorption resulted in a 14.4-fold increase in the specific capacitance of MX(H)/Ru compared to pristine MX(H), whereas MX(N)/Ru exhibited only a 4.4-fold increase over its pristine counterpart. X-ray diffraction analysis identified the formation of ammonium titanium oxide fluoride, (NH 4 ) 3 TiOF 5 , on MX(N), which likely contributed to its reduced Ru adsorption. X-ray photoelectron spectroscopy suggested the presence of Ti vacancies in both MXene variants; however, their behavior toward Ru accommodation differed markedly, with MX(H) showing the most obvious shift in the Ti 2p peak in the XPS survey spectrum, while MX(N) showed the most obvious shift in the C 1s peak. Electron paramagnetic resonance spectroscopy further demonstrated a distinct alteration in the spectral signatures of MX(H) upon Ru addition, in contrast to the negligible changes in MX(N), indicating effective passivation of the Ti defect sites in MX(H) via vacancy-assisted Ru doping. Cyclic voltammetry showed that Ru-incorporated MX(H) nanocomposites exhibit more efficient redox-active sites, as reflected in their higher capacitance values. These findings highlight the pivotal role of MXene surface chemistry in controlling cation adsorption, providing valuable insights for the rational design of high-performance electrodes.

2D surface engineering↗

Enhanced Stability and Sensitivity for CA-125 Detection Under Microfluidic Shear Flow Using Polyethylene Glycol-Coated Biosensor

The microfluidic-based point-of-care (POC) diagnostic tool has garnered significant interest in recent years, offering rapid and cost-effective disease detection. There is a growing trend toward integrating microfluidic platforms with biosensors, aligning lab-on-a-chip technologies with POC diagnostic devices. Despite numerous efforts to incorporate biosensors into microfluidic systems, researchers have performed very limited investigations on the stability of biomarker detection when biosensors operate under microfluidic shear flow conditions. Gold nanoparticles (AuNPs) are a widely employed material in capacitive biosensors for antibody immobilization and sensitivity enhancement. However, AuNPs have limitations in providing stable detection of biomarkers within microfluidic shear flow due to their agglomeration nature. This study addresses these limitations by employing 2 kDa polyethylene glycol (PEG) as an intermediate biofunctional layer to immobilize CA-125 antibodies on gold-interdigitated electrodes for the stable and accurate detection of CA-125 antigens. The stabilities and sensitivities of AuNPs and PEG-coated biosensors are evaluated under both static drop and microfluidic shear flow conditions for CA-125 antigen detection. The experimental results demonstrate a capacitive signal response (5660 pF at 10 kHz) 2.2 times higher using the PEG-coated biosensor than the signal (2551 pF at 10 kHz) measured by the AuNP-coated biosensor in the detection of CA-125 antigen–antibody conjugation under static drop conditions, indicating the higher sensitivity of the PEG-coated biosensor. Additionally, the PEG-coated biosensor exhibits better consistency for the CA-125 antigen detection between static drop and microfluidic shear flow conditions (Cp decrease in percentage (ΔCp%↓) = 2.9% at 10 kHz) compared to the electrical signals measured using the AuNP-coated biosensor (ΔCp%↓ = 32.4% at 10 kHz), which suggests that the PEG-coated biosensor demonstrates higher stability for CA-125 antigen detection under microfluidic shear flow conditions. With these significant improvements brought by the PEG-coated biosensor, especially under microfluidic conditions, a substantial hurdle in developing electrical biosensors for POC diagnostic applications has been overcome, expediting further advancements in the field.

36 MATERIALS SCIENCE↗

Molecular-scale insights into the electrical double layer at oxide-electrolyte interfaces

The electrical double layer (EDL) at metal oxide-electrolyte interfaces critically affects fundamental processes in water splitting, batteries, and corrosion. However, limitations in the microscopic-level understanding of the EDL have been a major bottleneck in controlling these interfacial processes. Herein, we use ab initio-based machine learning potential simulations incorporating long-range electrostatics to unravel the molecular-scale picture of the EDL at the prototypical anatase TiO 2 -electrolyte interface under various pH conditions. Our large-scale simulations, capable of capturing interfacial water dissociation/recombination reactions and electrolytic proton transport, provide unprecedented insights into the detailed structure of the EDL. Moreover, the larger capacitance of the EDL under basic relative to acidic conditions, originating from the higher affinity of the cations for the oxide surface, is found to give rise to distinct charging mechanisms on negative and positive surfaces. Our results are validated by the agreement between the computed EDL capacitance and experimental data.

Chemical physics↗

Superionic fluoride gate dielectrics with low diffusion barrier for two-dimensional electronics

Exploration of new dielectrics with a large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near the breakdown limit. Here, to address this looming challenge, we demonstrate that rare-earth metal fluorides with extremely low ion migration barriers can generally exhibit an excellent capacitive coupling over 20 μF cm -2 (with an equivalent oxide thickness of ~0.15 nm and a large effective dielectric constant near 30) and great compatibility with scalable device manufacturing processes. Such a static dielectric capability of superionic fluorides is exemplified by MoS 2 transistors exhibiting high on/off current ratios over 10 8 , ultralow subthreshold swing of 65 mV dec -1 and ultralow leakage current density of ~10 -6 A cm -2 . Therefore, the fluoride-gated logic inverters can achieve notably higher static voltage gain values (surpassing ~167) compared with a conventional dielectric. Furthermore, the application of fluoride gating enables the demonstration of NAND, NOR, AND and OR logic circuits with low static energy consumption. In particular, the superconductor–insulator transition at the clean-limit Bi 2 Sr 2 CaCu 2 O 8+δ can also be realized through fluoride gating. In conclusion, our findings highlight fluoride dielectrics as a pioneering platform for advanced electronic applications and for tailoring emergent electronic states in condensed matter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

MXene/graphitic carbon nitride-supported metal selenide for all-solid-state flexible supercapacitor and oxygen evolution reaction

We report a new type of combination of rare earth metal selenides (Ce 2 Se 3 and Er 2 Se 3 ) with a Ti 3 C 2 T x /S-doped graphitic carbon nitride heterostructure for bifunctional application in flexible supercapacitors and oxygen evolution reactions. The incorporation of S-doped graphitic carbon nitride in MXenes reduced the layer stacking tendency of both two-dimensional sheets and eliminated volume expansion by forming a heterostructure. Cerium and erbium rare earth metal centers induce reactive surface sites, whereas binary layers of Ti 3 C 2 T x /S-doped graphitic carbon nitride provide a conducting matrix for the homogeneous growth of the metal selenides. The assembled all-solid-state flexible asymmetric supercapacitor exhibited a high specific capacitance of 60 F g –1 , an energy density of 10.1 W h kg –1 (volumetric energy density: 0.9 mW h cm –3 ) at 2 A g –1 , and 100% capacitance retention after 10 000 charge–discharge cycles with good flexibility for real-time applications. Furthermore, the optimum nanohybrid showed a low overpotential of 280 mV and a Tafel slope of 99 mV dec –1 with durable electrocatalytic performance. Furthermore, this work is the first to investigate the bifunctional energy efficiency of rare earth metal selenides grown over MXene materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

High-efficiency frost and ice control via sensing-assisted nanovibrational slippery surfaces

Frost and ice accretions on surfaces pose persistent challenges across numerous industrial, residential and transportation systems. While various removal strategies exist, they often suffer from limited effectiveness or high energy consumption, such as frosting delay, ice crack generation, and Joule heating. Here, in this work, we report a novel integrated approach combining vibrational quasi-liquid surface (QLS) and capacitive sensing for efficient condensate, frost, and ice management. Compared to Joule heating, our approach does not rely on complete melting and evaporation for removal, resulting in 68% and 95% energy savings for frost and ice removal, respectively. Our QLS coating significantly reduces surface retention forces, achieving 91% and 87% less residual mass compared to hydrophilic surfaces for frost and ice removal through surface nanovibration, respectively. The integrated capacitive sensor provides real-time detection of different phase states, enabling on-demand removal in precise timeframes. This sensor-assisted approach showed 3.8 times lower energy consumption compared to conventional Joule heating for defrosting. This synergistic integration of surface engineering, nanovibration, and intelligent sensing represents a significant advancement in phase change processes, offering an energy-efficient solution for frost and ice mitigation in energy-intensive systems.

Shen, Yuchen [Univ. of Texas at Dallas, Richardson↗

Graphene oxide precursor effects on 3D-printed carbon scaffolds

Manganese oxide (MnO 2 ), an earth-abundant material, is a promising component for energy storage devices, with uses in both pseudocapacitors and batteries. However, high MnO 2 loading often leads to reduced performance due to poor ion diffusion. 3D printing, particularly using the direct ink writing (DIW) technique, offers a solution by enabling the fabrication of electrodes with hierarchical porous structures and open channels that enhance mass transport and ion diffusion. Previous work demonstrated that 3D-printed graphene aerogels with MnO 2 coatings exhibited excellent electrochemical performance, even with thick electrodes, due to their optimized structure. Building on this work, the current study investigates the performance differences between aerogels developed using graphene oxide (GO) and reduced graphene oxide (rGO) as carbon precursors. Both materials were incorporated into thixotropic inks, 3D-printed into lattice structures, and carbonized. Despite expected similarities between the final graphene aerogel, rGO-based aerogels exhibited superior areal capacitance, compared to GO-based aerogels. These differences are attributed to the lower oxygen content and defect density of rGO, which influence its interaction with cellulose viscosifiers in the ink formulation. Brunauer–Emmett–Teller (BET) surface area analysis revealed that rGO aerogels exhibit a larger surface area and mesoporous structure, further enhancing their performance. When coated with MnO 2 , rGO-based aerogels maintained their superior capacitive behavior over GO-based aerogels. This study highlights the effect of carbon precursor on the end performance of graphene aerogels.

Materials science↗

Optimizing protic ionic liquid electrolyte for pre-intercalated Ti 3 C 2 T x MXene supercapacitor electrodes

Electrical double-layer capacitors (EDLCs) are of increasing importance in energy storage from renewable sources. The properties of the electrode and electrolyte materials influence the energy and power densities of EDLCs. We examined the specific capacitance and ion dynamics of a protic ionic liquid confined in pre-intercalated Ti 3 C 2 T x MXene. Our electrochemical measurements demonstrated that the creation of a protic ionic liquid, 1-butyl-3-H-imidazolium bis(trifluoromethanesulfonyl)imide (BuIMH-NTf2), using a mixture of ionic liquid, 1-butyl imidazole (BuIM), and salt, bis(trifluoromethanesulfonyl)imide (HNTf2), in a ratio of 0.8:0.2 led to the optimal capacitance. Remarkably, quasi-elastic neutron scattering measurements revealed increased particle mobility at this composition, attributed to the more efficient accumulation of BuIMH + on the electrode surface. This deposit of additional ions results in fewer BuIM molecules away from the surface, enhancing their mobility due to reduced crowding. This composition-dependent electrochemical behavior will guide the formulation of more efficient protic ionic liquid systems, enabling faster ion transport in energy storage devices.

36 MATERIALS SCIENCE↗

Origin of proton irradiation-induced deep acceptors in Al 0.70 Ga 0.30 N

Deep level defect introduction and carrier removal were characterized using steady-state photocapacitance (SSPC), deep level transient spectroscopy (DLTS) and lighted capacitance–voltage for proton irradiated n-type Al 0.70 Ga 0.30 N Schottky diodes grown by metal-organic vapor phase epitaxy on AlN-on-sapphire templates. SSPC observed deep levels in the as-grown diode with zero-phonon transition energies of 2.20, 2.65, 3.10, 3.40, and 4.65 eV relative to the conduction band minimum (E c ), and an additional deep level emerged at 1.20 eV with irradiation. Lighted capacitance–voltage measurements quantified the deep level concentration (N t ) of states detected by SSPC, and it was observed that N t increased with proton fluence only for the 1.2 and 4.65 eV levels. Carrier removal was much larger than the increase in N t of the 1.2 and 4.65 eV deep levels, suggesting that radiation-induced deep level compensators existed beyond what was detected with SSPC. DLTS detected additional, proton-induced deep acceptors at E c —0.55, 0.82, and 1.16 eV, the latter of which is likely the same 1.20 eV deep state observed by SSPC. The concentration of the E c —0.82 eV defect state was large enough to reconcile carrier removal with total deep level introduction. Comparing the E c —0.82 and 1.16 eV deep acceptor levels to previous experimental and theoretical reports suggests that their atomistic origins could be the nitrogen vacancy (V N ) and oxygen substituting on the nitrogen sub-lattice (O N ), respectively. This defect behavior contrasts starkly with GaN, where V N and O N are shallow donors, and demonstrates that the electronic properties of defects can evolve drastically within the AlGaN alloy system ranging from wide bandgap GaN to ultra-wide bandgap AlN.

Armstrong, Andrew Michael [Sandia National Laborat↗

A sensing material-free and simple readout MEMS sensor for detecting Helium

Abstract In this work, we report a method that enables a standard electrostatic MEMS device to perform complex sensing functionalities, such as detecting the presence of helium without a sensing material or a conditioning circuit. Helium is a noble, odorless, non-reactive gas that is very challenging to detect. It is used in critical applications such as storing nuclear fuel waste inside a dry cask. In these applications, its leakage from the dry cask may indicate the cask's safe operation's degradation. A departure from the common practice of exciting the MEMS around its mechanical resonance, the method is based on exciting the MEMS around its electrical resonance circuit. This method shows that the tiny difference between the air dielectric constant (1.00059) and helium (1.000067) corresponding to only a few Femtofarad level capacitances produces a 25 mV difference without a conditioning circuit. Simulation results confirmed those findings and explored the sensor response at different operation conditions. This method eliminates the need for a heated microstructure and the need for absorption material. This method is not limited to gas sensing. It can be applied to other sensing mechanisms, such as acceleration and pressure measurements, and eliminate the complex circuit to read small capacitance in these applications.

Mohaidat, Sulaiman↗

Optical characterization of deep-level defects in n-type Al x In y Ga 1- x - y P for the development of solid-state photomultiplier analogs

Characterizing intrinsic defects is an essential step in evaluating materials for novel optoelectronic device applications. For photomultipliers, suppressing dark currents is critical, but a tradeoff is present between maximizing the band gap while remaining sensitive to the wavelength of interest and minimizing the incorporation of fresh defects by growing not-yet-optimized alloys. We present a series of capacitance-based measurements, including deep-level optical spectroscopy, steady-state photocapacitance, and illuminated capacitance-voltage, on photodiodes with lightly n-type Al x In y Ga 1−x−y P absorber regions. Several deep levels are identified, including one near the midgap. Although the inclusion of aluminum increases each trap density by approximately 10×, the hole capture cross-section also appears to decrease, suggesting that Shockley–Read–Hall dark currents may be suppressed. These materials may be good candidates for the development into silicon photomultiplier analogs with a wider bandgap for scintillator applications.

III–V↗

Magnetization dynamics driven by displacement currents across a magnetic tunnel junction

Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of a frequency-dependent capacitive current effect in Co Fe B / Mg O -based MTJs and its influence on magnetization dynamics using a time-resolved magneto-optical Kerr effect technique. In our device, operating at gigahertz frequencies, we find a large displacement current of the order of mA, which does not break the tunnel barrier of the MTJ. Importantly, this current generates an Oersted field and spin-orbit torque, inducing magnetization dynamics. Our discovery holds promise for building robust MTJ devices operating under high current conditions, also highlighting the significance of capacitive impedance in high-frequency magnetotransport techniques. Published by the American Physical Society 2024

Safeer, C. K. (ORCID:0000000323969730)↗

First Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and its Scalability for High-Density 3D Ferroelectric Capacitor Memory

In this article, we perform a comprehensive experimental and modeling study into the scaling of vertical 2T-nC ferroelectric random-access memory (FeRAM) hybrid cell to demonstrate a high performance and high-density 3D capacitor memory. We demonstrate: i) first time successful integration of the vertical 2T-3C FeRAM cell by stacking the vertical metal-ferroelectricmetal (MFM) stack on top of Si CMOS transistors; ii) successful experimental operation of the memory cell, including the quasi-nondestructive read out (QNRO) of the polarization without write back after 106 read cycles; iii) the write bit line (WBL) heavily screens the coupling between neighboring strings, making it a minor concern; V ) aggressive stacking of the WBLs, i.e., number of MFMs in a string, could facilitate the self-boosting during write operation due to ferroelectric linear capacitance (CFE), which allows self-boosted inhibition for Vw/2 scheme and worsens the Vw/3 scheme as disturb increases to intolerable 2Vw/3; v) aggressive horizontal scaling significantly increases the read disturb to cells on neighboring planes due to capacitance between two WBLs (Cz).

42 ENGINEERING↗