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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Ohmic contacts for laser diodes

Requirements for ohmic contacts to laser diodes are discussed, and properties of Schottky barrier tunneling contacts are reviewed. A procedure is described for measuring contact resistance on fabricated laser material without the need for specially constructed samples and contact configurations. Measurements of contact resistance and estimates of specific contact resistance are given for Ti/Pt/Au contacts to surfaces with three different doping levels. It was found that below a p-type carrier concentration of 1 x 10 to the 19th per cu cm the contact resistance is likely to be too high for good device performance. At higher doping levels, a specific contact resistance as low as 2 x 10 to the -6th ohm sq cm was obtained. Oxide stripe lasers provided with the type of contact discussed in this paper have been operated without failures for periods up to 7 years at a current density at the contact of 6-8 kA/sq cm. It appears therefore that these contacts satisfy the need for low resistance and durability and that, at the same time, they do not cause any obvious material degradation.

Ladany, I.↗
NASA NTRS2004

Multiwalled Carbon Nanotube/nanofiber Arrays as Conductive and Dry Adhesive Interface Materials

We demonstrate the possibility of making conductive and dry adhesive interfaces between multiwalled carbon nanotube (MWNT) and nanofiber (MWNF) arrays grown by chemical vapor deposition with transition-metal as catalyst on highly Boron doped silicon substrates. The maximum observed adhesion force between MWNT and MWNF surfaces is 3.5 mN for an apparent contact area of 2 mm by 4 mm. The minimum contact resistance measured at the same time is approx.20 Omega. Contact resistances of MWNT-MWNT and MWNT-gold interfaces were also measured as pressure forces around several mN were applied at the interface. The resulting minimum contact resistances are on the same order but with considerable variation from sample to sample. For MWNT-MWNT contacts, a minimum contact resistance of approx.1 Omega is observed for a contact area of 2 mm by 1 mm. The relatively high contact resistances, considering the area density of the nanotubes, might be explained by the high cross-tube resistances at the contact interfaces.

Tong, Tao↗
NASA NTRS1987

Ohmic contact formation in semi-insulating GaAs using shallow heavily doped p-type layers

The paper describes a simple, safe, and effective method for forming shallow zinc-doped p-type layers on chromium-doped semiinsulating GaAs, using an open-tube diffusion technique. The resulting peak dopant concentration for the 850-C diffusion was 10 to the 20th/cu cm. The contact resistance of ohmic contacts fabricated on these layers was found to be about 0.00005 ohm/sq cm. The variation of the contact resistance across the wafer reflected the variation of the doping concentration.

Bose, Amitava↗
NASA NTRS1983

Getting the current out

Progress of a photovoltaic (PV) device from a research concept to a competitive power-generation source requires an increasing concern with current collection. The initial metallization focus is usually on contact resistance, since a good ohmic contact is desirable for accurate device characterization measurements. As the device grows in size, sheet resistance losses become important and a metal grid is usually added to reduce the effective sheet resistance. Later, as size and conversion efficiency continue to increase, grid-line resistance and cell shadowing must be considered simultaneously, because grid-line resistance is inversely related to total grid-line area and cell shadowing is directly related. A PV cell grid design must consider the five power-loss phenomena mentioned above: sheet resistance, contact resistance, grid resistance, bus-bar resistance and cell shadowing. Although cost, reliability and usage are important factors in deciding upon the best metallization system, this paper will focus only upon grid-line design and substrate material problems for flat-plate solar arrays.

Burger, D. R.↗
NASA NTRS1972

Friction at small displacement.

Low contact resistance between metal surfaces is often observed in spite of interposed lubricant and/or oxide films. To study this effect an apparatus is used with which normal force and tangential microdisplacement are applied between a small lead rider and a gold flat with various surface film conditions. Under nonoxidized and nonlubricated conditions, and with either oxide or stearic acid lubricant film alone, friction is high and contact resistance is low. With oxide and lubricant together, friction is much lower and slide is smooth, but contact resistance remains low and Ohm's law is obeyed. The results are consistent with Greenwood's theory of contact resistance for a cluster of minute metallic contact spots within the load-supporting area. The contact resistance of such a cluster is indistinguishable, for practical purposes, from that given by complete metallic contact.

Campbell, W. E.↗
NASA NTRS1980

Technology development for phosphoric acid fuel cell powerplant (phase 2)

Progress is reported in the development of material, cell components, and reformers for on site integrated energy systems. Internal resistance and contact resistance were improved. Dissolved gases (O2, N2, and CO2) were found to have no effect on the electrochemical corrosion of phenolic composites. Stack performance was increased by 100 mV over the average 1979 level.

Christner, L.↗
NASA NTRS1987

Development of a unique laboratory standard: Indium gallium arsenide detector for the 500-1700 nm spectral region

A planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.

Source record↗
NASA NTRS1992

Effects of ultra-vacuum and space environment on contact ohmic resistance: LDEF experiment AO 138-11

The FRECOPA experimentation of chemical resistance of electrical connector contacts, as described, has evidenced the detrimental time variations of nickel plated conductors and gilded copper contacts, irrespective of crimping storage or metal peening conditions. With a view to reorient aluminum technology a silvered aluminum conductor/gilded aluminum contact solution was evaluated.

Assie, Jean-Pierre↗
NASA NTRS1995

High-temperature ohmic contact to n-type 6H-SiC using nickel

Specific contact resistances measured at elevated temperatures for Ni ohmic contacts to 6H-SiC were reported. The specific contact resistances were measured with the linear transmission line method at both room temperature and at 500 C and yielded values less than 5 x 10(exp -6) ohm sq cm at both temperatures. The trend shows a decreasing contact resistance at higher temperature. The annealed metal film is a nickel silicide with substantial mixing of C throughout the silicide layer.

Crofton, J.↗
NASA NTRS1972

Electric contact phenomena in ultra clean and specifically contaminated systems.

Contact resistance has been used to characterize the processes of physical contact in metallic systems with ultra clean surfaces. The contact resistance versus load curves of iron and two cobalt alloys were used to demonstrate the existence of surface work hardening and interfacial creep during contact as well as the fracture characteristics of an interfacial junction as the load is removed. The presence of an adsorbed film of hydrogen or hydrogen ions on iron completely changes the contact process. A comparison of the contact resistance versus load data for ultra pure iron, an iron-cobalt alloy and a cobalt molybdenum-chromium was used to illustrate the effect of substrate mechanical properties on static adhesion and the ability to convert these data for the estimation of the dynamic coefficient of friction under the particular experimental conditions.

Keller, D. V., Jr.↗
NASA NTRS1971

Electric contact phenomena in ultra clean and specifically contaminated systems.

Contact resistance has been used to characterize the processes of physical contact in metallic systems with ultraclean surfaces. The contact resistance versus load curves of iron and two cobalt alloys were used to demonstrate the existence of surface work hardening and interfacial creep during contact as well as the fracture characteristics of an interfacial junction as the load is removed. The presence of an adsorbed film of hydrogen or hydrogen ions on iron completely changes the contact process. A comparison of the contact resistance versus load data for ultrapure iron, and iron-cobalt alloy, and a cobalt molybdenum-chromium was used to illustrate the effect of substrate mechanical properties on static adhesion and the ability to convert these data for the estimation of the dynamic coefficient of friction under the particular experimental conditions.

Keller, D. V., Jr.↗
NASA NTRS2021

Thermoelectric System Economics - The Apex: New Paradigms in Manufacturing and Interface Performance Relationships Driving System Cost Optimizations

Thermoelectric energy recovery systems require cost-optimized designs with high thermal and thermoelectric (TE) performance to surmount common commercialization barriers controlling the acceptance of thermoelectric generator (TEG) systems. Recent work has addressed this requirement with new analytic tools and paradigms that allow integrated TEG cost-performance analysis and optimization. New work herein has identified the existence of optimized TE element design (i.e., TE element length) for minimizing TEG cost and provides design guidelines associated with critical thermal and electrical contact resistance effects and TE manufacturing sensitivities. Once optimum hot-side heat flux criteria are satisfied, this work highlights the tradeoffs between interface resistance effects and manufacturing cost effects in determining optimum-cost TE element lengths, and then quantifies the increase in optimum-cost TE lengths as manufacturing costs become more sensitive to TE element lengths. Optimized TE element design criteria and key non-dimensional design parameters (i.e., [𝐶′′′LTE/𝐶′′], [TE/con], [con/(TE,aveLTE)]) driving the design are presented and explained showing the interdependencies between manufacturing cost parameters and thermal and electrical interface impacts on integrated TE cost-performance analysis and design. Comprehensive TEG system cost-performance relationships clearly demonstrate the two parameters that most greatly impact the TEG system cost are heat exchanger costs ($/(W/K)) and TE hot side heat flux. Reducing heat exhanger cost from $1/(W/K) to $0.5/(W/K) can decrease TEG system cost by $2/W to $4/W depending on TE hot side heat fluxes from 4-10 W/cm2. The impact of TE hot side heat flux on TEG system cost is larger; reducing TE system cost by factors of 2-4 as TE hot side heat flux increases from 4 W/cm2 to high levels around 18 W/cm2. The levels of thermal contact resistance and electrical contact resistance required to even approach the critical TEG system cost level of $1/W are characterized by con = 1.0 x 10-10 -m2 and r = 0.1, respectively. This not only lowers TEG costs, but it also makes the TEG system costs less sensitive to TE manufacturing dependences on TE element length. New design paradigms and relationships create holistic, integrated TE performance-cost models that enhance understanding of crucial interrelationships between component costs, TE design parameters and material properties, heat exchanger design parameters, interfacial heat flux, and now thermal and electrical interface effects in minimizing TEG system costs.

Hendricks, Terry J.↗
NASA NTRS1999

Single Particle Transport Through Carbon Nanotube Wires: Effect of Defects and Polyhedral Cap

The ability to manipulate carbon nanotubes with increasing precision has enabled a large number of successful electron transport experiments. These studies have primarily focussed on characterizing transport through both metallic and semiconducting wires. Tans et al. demonstrated ballistic transport in single-wall nanotubes for the first time, although the experimental configuration incurred large contact resistance. Subsequently, methods of producing low contact resistances have been developed and two terminal conductances smaller than 50 k-ohms have been repeatably demonstrated in single-wall and multi-wall nanotubes. In multi-wall nanotubes, Frank et al. demonstrated a resistance of approximately h/2e(exp 2) in a configuration where the outermost layer made contact to a liquid metal. This was followed by the work of de Pablo et al. where a resistance of h(bar)/27e(exp 2) (approximately 478 ohms) was measured in a configuration where electrical contact was made to many layers of a multi-wall nanotube. Frank et al. and Pablo et al. note that each conducting layer contributes a conductance of only 2e(exp 2)/h, instead of the 4e(exp 2)/h that a single particle mode counting picture yields. These small resistances have been obtained in microns long nanotubes, making them the best conducting molecular wires to date. The large conductance of nanotube wires stems from the fact that the crossing bands of nanotubes are robust to defect scattering.

Anantram, M. P.↗
NASA NTRS2011

Life Testing of Yb14MnSb11 for High Performance Thermoelectric Couples

The goal of this study is to verify the long term stability of Yb14MnSb11 for high performance thermoelectric (TE) couples. Three main requirements need to be satisfied to ensure the long term stability of thermoelectric couples: 1) stable thermoelectric properties, 2) stable bonding interfaces, and 3) adequate sublimation suppression. The efficiency of the couple is primarily based on the thermoelectric properties of the materials selected for the couple. Therefore, these TE properties should exhibit minimal degradation during the operating period of the thermoelectric couples. The stability of the bonding is quantified by low contact resistances of the couple interfaces. In order to ensure high efficiency, the contact resistances of the bonding interfaces should be negligible. Sublimation suppression is important because the majority of thermoelectric materials used for power generation have peak figures of merit at temperatures where sublimation rates are high. Controlling sublimation is also essential to preserve the efficiency of the couple. During the course of this research, three different life tests were performed with Yb14MnSb11 coupons. TE properties of Yb14MnSb11 exhibited no degradation after 6 months of aging at 1273K, and the electrical contact resistance between a thin metallization layer and the Yb14MnSb11 remained negligible after 1500hr aging at 1273K. A sublimation suppression layer for Yb14MnSb11 was developed and demonstrated for more than 18 months with coupon testing at 1273K. These life test data indicate that thermoelectric elements based on Yb14MnSb11 are a promising technology for use in future high performance thermoelectric power generating couples.

thermoelectric couples↗
NASA NTRS1991

The Influence of Interstitial Ga and Interfacial Au (sub 2)P (sub 3) on the Electrical and Metallurgical Behavior of Au-Contacted III-V Semiconductors

The introduction of a very small amount of Ga into Au contact metallization on InP is shown to have a significant effect on both the metallurgical and electrical behavior of that contact system. Ga atoms in the interstices of the Au lattice are shown to be effective in preventing the solid state reactions that normally take place between Au and InP during contact sintering. In addition to suppressing the metallurgical interaction, the presence of small amounts of Ga is shown to cause an order of magnitude reduction in the specific contact resistivity. Evidence is presented that the reactions of GaP and GaAs with Au contacts are also drastically affected by the presence of Ga. The sintering behavior of the Au-GaP and the Au-GaAs systems (as contrasted with that of the Au-InP system) is explained as due to the presence of interstitial Ga in the contact metallization. Finally the large, two-to-three order of magnitude drop in the contact resistance that occurs in the Au-InP system upon sintering at 400 degrees Centigrade is shown to be a result of the formation of an Au (sub 2) P (sub 3) layer at the metal-semiconductor interface. Contact resistivities in the 10 (sup -6) ohm square centimeter range are obtained for as-deposited Au on InP when a thin (20 Angstrom) layer of Au (sub 2) P (sub 3) is introduced between the InP and the Au contacts.

Weizer, Victor G.↗